With the growing adoption of advanced flip-chip–based vertical stacking packaging technology, solder microbumps are required to shrink to accommodate higher input/output density. However, the increased current density intensifies electromigration (EM)-induced damage, thus compromising chip reliability. In this study, we elucidate the failure mechanisms of asymmetric (Cu/SnAg/Ni/Cu) and symmetric (Cu/SnAg/Cu) microbump structures under EM tests. Results showed that, under the comparable EM test, the asymmetric Cu/SnAg/Ni/Cu structure exhibited more severe EM-induced degradation than the symmetric Cu/SnAg/Cu structure. Cross-sectional analyses were also conducted to further correlate the under-bump-metallization (UBM) dissolution rates, void formation, and failure time. We found that the symmetric structure demonstrated a longer failure time, while the asymmetric solder joint exhibited a higher UBM dissolution rate and void ratio. In the symmetric joints, UBM degradation and void growth occurred primarily on the cathode side, governed by EM direction. In contrast, the asymmetric counterparts experienced additional effects from thermomigration and chemical potential gradients, causing UBM dissolution and severe void formation on the side without a Ni diffusion barrier layer.
扫码关注我们
求助内容:
应助结果提醒方式:
