The ability to control heat flux at the nanoscale opens up numerous exciting possibilities in modern electronics and the field of information processing. In this research, we propose a design with the focus on achieving efficient thermal rectification at moderate gap and relatively low temperature. This study centers on near-field thermal radiation between temperature dependent indium antimonide (InSb) and silicon carbide (3C-SiC) coated with bismuth selenide (Bi2Se3). Our investigation sheds light on the critical role played by the Bi2Se3 layer in enhancing various key parameters, including the net radiative flux, and thermal rectification efficiency (η). We achieved a substantial improvement in the η of a near-field radiative thermal rectifier (NFRTR) due to the presence of the Bi2Se3 sheet. This enhancement is contingent on factors such as the Fermi energy (Ef) of Bi2Se3, emitter temperature, and the vacuum gap (d). Our study culminated in the identification of an optimal design, achieving an impressive η of 75% at an emitter temperature (TH) of 350 K, with vacuum gap (d) set to 20 nm. Furthermore, increasing TH to 500 K resulted in even more promising outcomes, with the highest η reaching 93%. The need for operating the optimized device at moderate temperatures is to strike a balance between efficiency, safety, cost-effectiveness, and material compatibility. These findings represent a significant step forward in the development of efficient Bi2Se3-based NFRTRs, paving the way for future applications in thermal management, energy conversion systems, and thermal logic gates.
Enhancing pool boiling performance is crucial for cooling high-power electronics. Inspired by the concept of liquid-vapor separation, we have developed a self-induced jet impingement device to enhance pool boiling, achieving notable results when combined with microporous copper surfaces in subsequent studies. This paper focuses on using sandblasted pin-fin surfaces as heating surfaces and explores their pool boiling performance under varied pin-fin and self-induced jet device parameters. Findings indicate that the self-induced jet device effectively mitigates the obstruction caused by nucleating bubbles to liquid replenishment, leading to improved qCHF and hNB@CHF performance compared to standard conditions. The impact of pin-fin sidewall characteristics, determined by the manufacturing process and parameters, is significant, particularly in enhancing boiling heat transfer performance for dielectric liquid cooling processes. Pool boiling performance is negatively affected by too short or too tall pin-fin heights, irrespective of the self-induced jet presence. Simple strategies like increasing guidance tube length or jet holes number are inadequate for enhancing qCHF. However, increasing the number of jet holes with strategically placing it between pin-fins could still improve boiling performance. This study demonstrates qCHF enhancements of up to 145.8%, achieving a qCHF of 61.2 W/cm2, which noticeably surpasses standard pool boiling conditions.
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