Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890089
E. Worley, A. Salem, Y. Sittampalam
ESD protection networks can involve several different types of devices and associated interconnect. This paper examines the high current performance of several devices that can be found in the I/O cells of a 0.18 micron CMOS technology. Devices characterized include NFETs with and without N well drain resistors including segmented resistors, N well resistors, N channel field snap-back devices, PFETs, and diodes. Also examined is the performance of metal, contacts, and vias. Diode interconnect is also analyzed with respect to failure point and parasitic resistance.
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Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890118
A. Wallash, J. Hillman, Dexin Wang
In this work, we study and compare the dielectric breakdown and human body model electrostatic discharge (ESD) failure levels of tunneling magnetoresistive (TMR) sensors. An equivalent circuit for the TMR device is developed and used in SPICE circuit simulations to study its response to electrostatic discharge. Dielectric breakdown averaged 2.3 V and ESD testing showed device shorting at 8.6 V HBM.
在这项工作中，我们研究并比较了隧道磁阻(TMR)传感器的介电击穿和人体模型静电放电(ESD)失效水平。开发了TMR器件的等效电路，并将其应用于SPICE电路仿真中，研究了其对静电放电的响应。介电击穿平均为2.3 V, ESD测试显示器件在8.6 V HBM时发生短路。
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Pub Date : 1900-01-01DOI: 10.1109/EOSESD.2000.890038
H. Uchida, H. Kurosaki, T. Numaguchi
All microelectronic components are increasingly small, lightweight, thin, and short. This paper considers how to provide a better static control worksurface for the manufacturing area that handles very fine and highly sensitive microelectronic parts. The static sensitivity level for the microelectronic parts concerned is less than 100 V (HBM). We propose a new evaluation test method and guidance for new materials for use in highly susceptible microelectronics working areas. Unprotected devices with extremely thin oxide layers are very sensitive to electrostatic effects. Even some passive components such as capacitors, coils and resistors in surface mount packages are shown to be highly susceptible to electrostatic effects. Conventional static control methods are not always effective in protecting these modern parts, and thus it is time to re-evaluate static control methods and materials for the microelectronics market. In this paper, we consider the changes needed to ensure proper protection of extremely sensitive parts. We propose a new test methodology that better emulates the actual conditions encountered in microelectronics manufacturing.
所有的微电子元件都越来越小、轻、薄、短。本文研究了如何为处理非常精细和高灵敏度微电子零件的制造区域提供一个更好的静态控制工作台。有关微电子部件的静态灵敏度等级小于100 V (HBM)。我们提出了一种新的评价试验方法和用于高敏感微电子工作区域的新材料指南。具有极薄氧化层的未保护器件对静电效应非常敏感。即使是表面贴装封装中的一些无源元件，如电容器、线圈和电阻器，也显示出对静电效应的高度敏感性。传统的静态控制方法并不总是有效地保护这些现代部件，因此是时候重新评估微电子市场的静态控制方法和材料了。在本文中，我们考虑了需要的变化，以确保适当保护极其敏感的部分。我们提出了一种新的测试方法，可以更好地模拟微电子制造中遇到的实际情况。
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