A significant amount of knowledge and understanding of device charging damage in processing equipment exists in CMOS IC manufacturing. This paper introduces the basic charging mechanisms responsible for gate oxide damage in CMOS ICs, illustrates these mechanisms with examples of measurements obtained in contemporary IC processing equipment, describes a wafer charging characterization method successfully used by integrated circuit and equipment manufacturers to quantify wafer charging in process equipment, and shows how this knowledge could be applied to the control of charging damage in GMR head wafer processing.
{"title":"Wafer charging in process equipment and its relationship to GMR heads charging damage","authors":"W. Lukaszek","doi":"10.1109/6104.930956","DOIUrl":"https://doi.org/10.1109/6104.930956","url":null,"abstract":"A significant amount of knowledge and understanding of device charging damage in processing equipment exists in CMOS IC manufacturing. This paper introduces the basic charging mechanisms responsible for gate oxide damage in CMOS ICs, illustrates these mechanisms with examples of measurements obtained in contemporary IC processing equipment, describes a wafer charging characterization method successfully used by integrated circuit and equipment manufacturers to quantify wafer charging in process equipment, and shows how this knowledge could be applied to the control of charging damage in GMR head wafer processing.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121434629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890110
Kuo-Lung Lei, C.Y. Chu, J. Tseng, Yuh-Min Chiang, M. Young
The ESD performance of bridge-resistance based pressure diaphragm sensors, including micromachined silicon sensors and high-performance thin film sensors, is evaluated based on sensor span and offset as failure criteria. Different micromachined silicon sensors from different vendors show considerable differences in ESD performance. It is found that sensing element construction and layout contributes significantly to sensor ESD robustness. An incoming qualifying procedure is also developed to further help sensor application companies to screen sensing elements from different vendors. In addition, weak spots in current design are also identified.
{"title":"ESD performance of bridge-resistance pressure diaphragm sensors","authors":"Kuo-Lung Lei, C.Y. Chu, J. Tseng, Yuh-Min Chiang, M. Young","doi":"10.1109/EOSESD.2000.890110","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890110","url":null,"abstract":"The ESD performance of bridge-resistance based pressure diaphragm sensors, including micromachined silicon sensors and high-performance thin film sensors, is evaluated based on sensor span and offset as failure criteria. Different micromachined silicon sensors from different vendors show considerable differences in ESD performance. It is found that sensing element construction and layout contributes significantly to sensor ESD robustness. An incoming qualifying procedure is also developed to further help sensor application companies to screen sensing elements from different vendors. In addition, weak spots in current design are also identified.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117032443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890026
D.C. Smith, E. Nakauchi
Soft errors as well as damage can be caused by ESD in electronic systems. Such effects have resulted in many problems with companies and customers incurring large costs. Effects on system immunity of printed wiring board layout are covered and examples of field problems described. Suggestions on how to avoid such problems are given.
{"title":"ESD immunity in system designs, system field experiences and effects of PWB layout","authors":"D.C. Smith, E. Nakauchi","doi":"10.1109/EOSESD.2000.890026","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890026","url":null,"abstract":"Soft errors as well as damage can be caused by ESD in electronic systems. Such effects have resulted in many problems with companies and customers incurring large costs. Effects on system immunity of printed wiring board layout are covered and examples of field problems described. Suggestions on how to avoid such problems are given.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124296830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890037
M. Narkis, G. Lidor, A. Vaxman, L. Zuri
New static dissipative thermoplastic materials for injection molding and corrugated packaging have been recently developed based on the selective localization of carbon black in a multi-component system. This paper analyses the cleanroom compatibility of these new compounds with consistent resistivities within the desired static dissipative range (10/sup 6/-10/sup 9/ /spl Omega//sq) achieved with very low carbon black loadings (less than 2 wt%). The goals were to obtain an understanding of the various materials' performance with regards to ESD and cleanliness. Ionic contamination, outgassing, nonvolatile residues and electrical properties are the main topics addressed.
{"title":"Controlling ESD and cleanliness by using new thermoplastic compounds for injection molded and corrugated packaging products","authors":"M. Narkis, G. Lidor, A. Vaxman, L. Zuri","doi":"10.1109/EOSESD.2000.890037","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890037","url":null,"abstract":"New static dissipative thermoplastic materials for injection molding and corrugated packaging have been recently developed based on the selective localization of carbon black in a multi-component system. This paper analyses the cleanroom compatibility of these new compounds with consistent resistivities within the desired static dissipative range (10/sup 6/-10/sup 9/ /spl Omega//sq) achieved with very low carbon black loadings (less than 2 wt%). The goals were to obtain an understanding of the various materials' performance with regards to ESD and cleanliness. Ionic contamination, outgassing, nonvolatile residues and electrical properties are the main topics addressed.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125645946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890052
S. Voldman, P. Juliano, J. Schmidt, R. Johnson, L. Lanzerotti, Alvin J. Joseph, C. Brennan, James S. Dunn, D. Harame, Elyse Rosenbaum, B. Meyerson
This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.
{"title":"Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors","authors":"S. Voldman, P. Juliano, J. Schmidt, R. Johnson, L. Lanzerotti, Alvin J. Joseph, C. Brennan, James S. Dunn, D. Harame, Elyse Rosenbaum, B. Meyerson","doi":"10.1109/EOSESD.2000.890052","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890052","url":null,"abstract":"This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114786524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890050
V. Kraz, A. Wallash
In this work, we study the effects of electromagnetic interference (EMI) on GMR heads and test equipment. It was found that three types of cell phones (AMPS, TDMA and CDMA) did not cause magnetic or resistance change damage to the GMR heads, such as that caused by nearby ESD events. It was also found that EMI from a TDMA cell phone caused errors in a spin stand tester that could disrupt the test process and create yield losses in production. It is concluded that it may be prudent to restrict operation of mobile phones in the immediate proximity of GMR heads during handling and testing.
{"title":"The effects of EMI from cell phones on GMR magnetic recording heads and test equipment","authors":"V. Kraz, A. Wallash","doi":"10.1109/EOSESD.2000.890050","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890050","url":null,"abstract":"In this work, we study the effects of electromagnetic interference (EMI) on GMR heads and test equipment. It was found that three types of cell phones (AMPS, TDMA and CDMA) did not cause magnetic or resistance change damage to the GMR heads, such as that caused by nearby ESD events. It was also found that EMI from a TDMA cell phone caused errors in a spin stand tester that could disrupt the test process and create yield losses in production. It is concluded that it may be prudent to restrict operation of mobile phones in the immediate proximity of GMR heads during handling and testing.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128085661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Transmission line pulsers, commonly known as TLPs, have been used for many years to calibrate diagnostics, and provide precise high-voltage and high-current waveforms. The pulsers have been used to qualify the ESD response of many ESD protection circuits and devices (Rector and Hyatt, 1998; Gieser and Egger, 1996; Maloney and Khurana, 1985). TLP applications cover a wider range of uses beyond estimating the ESD susceptibility of device level protection circuits. TLPs have been used to certify many ESD suppression devices including: device level ESD protection circuits, metal oxide varistors (MOV), Transorbs, composite voltage variable materials (VVM), diodes, spark gaps, and occasionally, even capacitors and resistors. This paper describes a simplified, yet general, TLP circuit and method called time domain transmission (TDT) mode testing. The method differs from and is compared to time domain reflection (TDR) mode measurement techniques.
传输线脉冲器，通常被称为tlp，多年来一直用于校准诊断，并提供精确的高压和大电流波形。脉冲器已被用于许多ESD保护电路和设备的ESD响应(Rector和Hyatt, 1998;Gieser and Egger, 1996;Maloney and Khurana, 1985)。除了估计器件级保护电路的ESD敏感性之外，TLP应用范围更广。TLPs已被用于认证许多ESD抑制器件，包括:器件级ESD保护电路，金属氧化物压敏电阻(MOV)， Transorbs，复合电压可变材料(VVM)，二极管，火花隙，偶尔甚至电容器和电阻。本文介绍了一种简化但通用的TLP电路和时域传输(TDT)模式测试方法。该方法不同于时域反射(TDR)模式测量技术，并与之进行了比较。
{"title":"TLP measurements for verification of ESD protection device response","authors":"H. Hyatt, J. Harris, A. Alanzo, P. Bellew","doi":"10.1109/6104.930959","DOIUrl":"https://doi.org/10.1109/6104.930959","url":null,"abstract":"Transmission line pulsers, commonly known as TLPs, have been used for many years to calibrate diagnostics, and provide precise high-voltage and high-current waveforms. The pulsers have been used to qualify the ESD response of many ESD protection circuits and devices (Rector and Hyatt, 1998; Gieser and Egger, 1996; Maloney and Khurana, 1985). TLP applications cover a wider range of uses beyond estimating the ESD susceptibility of device level protection circuits. TLPs have been used to certify many ESD suppression devices including: device level ESD protection circuits, metal oxide varistors (MOV), Transorbs, composite voltage variable materials (VVM), diodes, spark gaps, and occasionally, even capacitors and resistors. This paper describes a simplified, yet general, TLP circuit and method called time domain transmission (TDT) mode testing. The method differs from and is compared to time domain reflection (TDR) mode measurement techniques.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133772967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890098
C. Moore
The effects of the human body model (HBM) electrostatic discharge (ESD) waveform on giant magnetoresistive (GMR) heads is fairly well characterized. This information provides a baseline against which a comparison can be made for other ESD models. The goal of this work is to compare and contrast the effects that are seen in GMR sensors when they are subjected to the charged-device model (CDM) versus HBM ESD events. This study compares the effects of CDM waveforms versus HBM waveforms on a single design of MR head. Although the HBM waveform has provided a starting point for understanding ESD damage to GMR heads, it is believed that the CDM model has a more useful basis in the reality of head manufacturing. This makes study of the effects of CDM ESD events on GMR heads both important and interesting. Detailed characterization of head response as a function of the ESD waveform was realized using a new system combining quasi-static (QST) analysis with in-situ CDM and HBM ESD simulation capabilities. A SEM was used to perform failure analysis on damaged heads in an attempt to characterize differences in the "failure signature" of the sensor.
{"title":"A comparison of quasi-static characteristics and failure signatures of GMR heads subjected to CDM and HBM ESD events","authors":"C. Moore","doi":"10.1109/EOSESD.2000.890098","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890098","url":null,"abstract":"The effects of the human body model (HBM) electrostatic discharge (ESD) waveform on giant magnetoresistive (GMR) heads is fairly well characterized. This information provides a baseline against which a comparison can be made for other ESD models. The goal of this work is to compare and contrast the effects that are seen in GMR sensors when they are subjected to the charged-device model (CDM) versus HBM ESD events. This study compares the effects of CDM waveforms versus HBM waveforms on a single design of MR head. Although the HBM waveform has provided a starting point for understanding ESD damage to GMR heads, it is believed that the CDM model has a more useful basis in the reality of head manufacturing. This makes study of the effects of CDM ESD events on GMR heads both important and interesting. Detailed characterization of head response as a function of the ESD waveform was realized using a new system combining quasi-static (QST) analysis with in-situ CDM and HBM ESD simulation capabilities. A SEM was used to perform failure analysis on damaged heads in an attempt to characterize differences in the \"failure signature\" of the sensor.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890130
S. Ramaswamy, J. Carter, J. Stubbart, A. Singh, R. Krasnick, F. Gocemen
The performance degradation of GMR heads subjected to human body model ESD transients is well documented. In this paper, we investigate the performance degradation of GMR heads subjected to ESD transients with time constants ranging from 1 ns to 250 ms. A charged device model fixture and a variable pulse-width model RC circuit were developed to produce the ESD transients. Dynamic electrical testing and quasi-static testing were used to characterize the devices before and after ESD. Both the voltage across and current through the sensor were measured simultaneously in order to estimate the instantaneous resistance and thus the temperature of the devices during the ESD transient. Two head designs were compared in this study. It is shown that the tested devices fail when the average temperature, estimated from the device resistance at uniform temperature, reaches about 275/spl deg/C regardless of the duration of the pulse.
{"title":"Effect of 1 ns to 250 ms ESD transients on GMR heads","authors":"S. Ramaswamy, J. Carter, J. Stubbart, A. Singh, R. Krasnick, F. Gocemen","doi":"10.1109/EOSESD.2000.890130","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890130","url":null,"abstract":"The performance degradation of GMR heads subjected to human body model ESD transients is well documented. In this paper, we investigate the performance degradation of GMR heads subjected to ESD transients with time constants ranging from 1 ns to 250 ms. A charged device model fixture and a variable pulse-width model RC circuit were developed to produce the ESD transients. Dynamic electrical testing and quasi-static testing were used to characterize the devices before and after ESD. Both the voltage across and current through the sensor were measured simultaneously in order to estimate the instantaneous resistance and thus the temperature of the devices during the ESD transient. Two head designs were compared in this study. It is shown that the tested devices fail when the average temperature, estimated from the device resistance at uniform temperature, reaches about 275/spl deg/C regardless of the duration of the pulse.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130256637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/EOSESD.2000.890039
C. Extrand
Conductive or static dissipative formulations of poly(etheretherketone) (PEEK) are used widely in the microelectronics industry where excellent temperature, chemical, and abrasion resistance are required (Campbell and Tan, 1997). Previous work on PEEK for electronics handling applications has focused on the contamination aspects of carbon (C) fiber compounds (Mikkelsen, 1996). This study compares the mechanical and electrical properties of PEEK compounds that contain a variety of conductive fillers: carbon fiber, carbon powder, and stainless steel fiber.
{"title":"Mechanical and electrical properties of poly(ether ether ketone) (PEEK) with various conductive fillers","authors":"C. Extrand","doi":"10.1109/EOSESD.2000.890039","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890039","url":null,"abstract":"Conductive or static dissipative formulations of poly(etheretherketone) (PEEK) are used widely in the microelectronics industry where excellent temperature, chemical, and abrasion resistance are required (Campbell and Tan, 1997). Previous work on PEEK for electronics handling applications has focused on the contamination aspects of carbon (C) fiber compounds (Mikkelsen, 1996). This study compares the mechanical and electrical properties of PEEK compounds that contain a variety of conductive fillers: carbon fiber, carbon powder, and stainless steel fiber.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120918034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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