Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565113
J. K. Wade, L. Mawst, D. Botez, M. Jansen, F. Fang, R. Nabiev
100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.
100 /spl μ m宽条纹，无铝，无涂层，0.83 /spl μ l μ m二极管激光器在T=20/spl度/C时提供4.7 W的连续波最大输出功率和45%的最大连续波壁塞效率。活性区由一个150 /spl的Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/量子阱组成，被0.4 /spl μ m In/sub 0.5/Ga/sub 0.5/P围合层和1.5 /spl μ l μ m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P包覆层包围。对于1毫米长的器件，我们获得的阈值电流密度低至220 A/cm/sup 2/，阈值电流特征温度T/sub 0/高达160 K。
{"title":"High CW power 0.8 /spl mu/m-band Al-free active-region diode lasers","authors":"J. K. Wade, L. Mawst, D. Botez, M. Jansen, F. Fang, R. Nabiev","doi":"10.1109/LEOS.1996.565113","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565113","url":null,"abstract":"100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128251113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565255
G. Letal, B. Elenkrig, J. Simmons
The effect of blocking the lateral current flow in a multiple-quantum well InGaAsP-InP ridge waveguide laser is examined theoretically both for different ridge widths and for various transverse (growth direction) optical confinement factors. It is shown that depending on the optical confinement factor or on the number of wells, the blocking of the lateral current can either increase or decrease the threshhold current of the laser.
{"title":"The effects of blocking the lateral current flow in multiple-quantum-well ridge waveguide lasers","authors":"G. Letal, B. Elenkrig, J. Simmons","doi":"10.1109/LEOS.1996.565255","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565255","url":null,"abstract":"The effect of blocking the lateral current flow in a multiple-quantum well InGaAsP-InP ridge waveguide laser is examined theoretically both for different ridge widths and for various transverse (growth direction) optical confinement factors. It is shown that depending on the optical confinement factor or on the number of wells, the blocking of the lateral current can either increase or decrease the threshhold current of the laser.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130154117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565098
K. Tanaka, M. Makiuchi, F. Norimatsu, C. Sakurai, N. Yamamoto, K. Miura, M. Yano
In this paper, we propose a novel type InGaAs-InP PIN photodiode suitable for surface-mounting for an optical access network system and demonstrate a high quantum efficiency and coupling efficiency, and large alignment tolerances.
{"title":"A corner-illuminated structure PIN photodiode suitable for planar lightwave circuit","authors":"K. Tanaka, M. Makiuchi, F. Norimatsu, C. Sakurai, N. Yamamoto, K. Miura, M. Yano","doi":"10.1109/LEOS.1996.565098","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565098","url":null,"abstract":"In this paper, we propose a novel type InGaAs-InP PIN photodiode suitable for surface-mounting for an optical access network system and demonstrate a high quantum efficiency and coupling efficiency, and large alignment tolerances.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565156
M. Nesnidal, L. Mawst, D. Botez, J. Buus
We theoretically demonstrate that a properly placed distributed-feedback grating can provide spatial-mode discrimination in phase-locked antiguided arrays. The analysis includes the effects of facet coatings and accounts for the random nature of the cleave location.
{"title":"Distributed-feedback grating used as a lateral spatial-mode selector in phase-locked antiguided arrays","authors":"M. Nesnidal, L. Mawst, D. Botez, J. Buus","doi":"10.1109/LEOS.1996.565156","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565156","url":null,"abstract":"We theoretically demonstrate that a properly placed distributed-feedback grating can provide spatial-mode discrimination in phase-locked antiguided arrays. The analysis includes the effects of facet coatings and accounts for the random nature of the cleave location.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127030344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571936
F. Casella, E. Iannone, M. Paciotti, R. Sabella
The technical advances in wavelength division multiplexing (WDM) techniques has made possible the introduction of optical technology into the path layer of the transport network. Besides the significant improvement in the transmission capacity, WDM technology allows the accomplishment of routing and switching functions directly in the optical domain. Thus Optical Cross-Connects (OXCs) can be realized with a throughput of a few hundreds of Gbit/s, so removing the bottleneck placed by electronic technology. The transport network node can be designed as an OXC interfacing a Digital Cross-Connect (DXC). Multi-Gigabit signals are directly routed in the optical network layer by the OXCs, while the DXCs provide demultiplexing to lower digital hierarchies and routing at the electrical level. The optical path layer can be designed so as to be transparent to the signal transmission format and speed. The aim of this paper is to assess the feasibility of transmitting sub-carrier multiplexed CATV channels in this optical path layer, by analysing the performance of the following transmission path: the CATV channels are generated in a production center, cross a geographical area through a transport network and an optical ring of a regional network, down to the access network and then to the customer.
{"title":"Transmission of sub-carrier multiplexed analog signals through the optical transport network","authors":"F. Casella, E. Iannone, M. Paciotti, R. Sabella","doi":"10.1109/LEOS.1996.571936","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571936","url":null,"abstract":"The technical advances in wavelength division multiplexing (WDM) techniques has made possible the introduction of optical technology into the path layer of the transport network. Besides the significant improvement in the transmission capacity, WDM technology allows the accomplishment of routing and switching functions directly in the optical domain. Thus Optical Cross-Connects (OXCs) can be realized with a throughput of a few hundreds of Gbit/s, so removing the bottleneck placed by electronic technology. The transport network node can be designed as an OXC interfacing a Digital Cross-Connect (DXC). Multi-Gigabit signals are directly routed in the optical network layer by the OXCs, while the DXCs provide demultiplexing to lower digital hierarchies and routing at the electrical level. The optical path layer can be designed so as to be transparent to the signal transmission format and speed. The aim of this paper is to assess the feasibility of transmitting sub-carrier multiplexed CATV channels in this optical path layer, by analysing the performance of the following transmission path: the CATV channels are generated in a production center, cross a geographical area through a transport network and an optical ring of a regional network, down to the access network and then to the customer.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129106267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565219
P. Moyer
Summary form only given. We discuss combining photoelectrochemistry techniques with near-field scanning optical microscopy (NSOM). The purpose of these experiments is to study the surface chemistry induced by charge transfer across the solid/liquid interface on an unprecedented length scale (<100 nm).
{"title":"Near-field scanning optical microscopy as a passive and active (material modification) scientific probe","authors":"P. Moyer","doi":"10.1109/LEOS.1996.565219","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565219","url":null,"abstract":"Summary form only given. We discuss combining photoelectrochemistry techniques with near-field scanning optical microscopy (NSOM). The purpose of these experiments is to study the surface chemistry induced by charge transfer across the solid/liquid interface on an unprecedented length scale (<100 nm).","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129128204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565281
T. Bunning, L. Natarajan, V. Tondiglia, R. Sutherland
The formation, characterization, and performance of switchable Bragg gratings formed by anisotropic phase separation of liquid crystals (LC) into periodic arrays are discussed. Examples of transmission and reflection gratings are shown in addition to possible diffractive optic applications.
{"title":"Switchable holographic gratings formed using polymer dispersed liquid crystals","authors":"T. Bunning, L. Natarajan, V. Tondiglia, R. Sutherland","doi":"10.1109/LEOS.1996.565281","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565281","url":null,"abstract":"The formation, characterization, and performance of switchable Bragg gratings formed by anisotropic phase separation of liquid crystals (LC) into periodic arrays are discussed. Examples of transmission and reflection gratings are shown in addition to possible diffractive optic applications.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121434682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565130
T. Watanabe, K. Iwashita, T. Ota, T. Shigematsu, K. Watanabe
A reconnectable 1/spl times/8 Star coupler device has been developed for coupling single-mode silica-based waveguides to a multifiber array. This device has a low average insertion loss of 10.44 dB and good reliability.
{"title":"Reconnectable 1/spl times/8 star coupler device for coupling single mode silica-based waveguides to a multifiber-array","authors":"T. Watanabe, K. Iwashita, T. Ota, T. Shigematsu, K. Watanabe","doi":"10.1109/LEOS.1996.565130","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565130","url":null,"abstract":"A reconnectable 1/spl times/8 Star coupler device has been developed for coupling single-mode silica-based waveguides to a multifiber array. This device has a low average insertion loss of 10.44 dB and good reliability.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121639310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565298
H. Nie, K. Anselm, C. Hu, B. Streetman, J. Campbell
In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.
{"title":"High-speed, low-noise resonant-cavity avalanche photodiodes","authors":"H. Nie, K. Anselm, C. Hu, B. Streetman, J. Campbell","doi":"10.1109/LEOS.1996.565298","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565298","url":null,"abstract":"In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126541626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565143
S. Uemura, K. Miyazaki
Kerr-lens mode-locked Cr:LiSAF lasers are attractive femtosecond pulse sources which can directly be pumped by compact diode lasers. In this paper, we demonstrate a novel cavity design for the Kerr-lens mode-locked Cr:LiSAF laser pumped by a single high-power diode laser.
{"title":"A novel cavity design for femtosecond Cr:LiSAF laser pumped by a single high-power diode laser","authors":"S. Uemura, K. Miyazaki","doi":"10.1109/LEOS.1996.565143","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565143","url":null,"abstract":"Kerr-lens mode-locked Cr:LiSAF lasers are attractive femtosecond pulse sources which can directly be pumped by compact diode lasers. In this paper, we demonstrate a novel cavity design for the Kerr-lens mode-locked Cr:LiSAF laser pumped by a single high-power diode laser.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125807436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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