Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571950
O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, M. Orenstein
Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of /spl delta/-doping with the squared potential of a finite strained In/sub x/Ga/sub 1-x/As/GaAs QW.
{"title":"Improved modulation bandwidth of strained quantum well lasers by coupled with n-type /spl delta/-doped layer","authors":"O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, M. Orenstein","doi":"10.1109/LEOS.1996.571950","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571950","url":null,"abstract":"Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of /spl delta/-doping with the squared potential of a finite strained In/sub x/Ga/sub 1-x/As/GaAs QW.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126848874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571634
J. Kong, S. Kim, Y. Shin
Recently, lasers and amplifiers have been developed to obtain a good spatial profile of a laser beam since good beam quality has been required for the best experimental results. In this work a simple method to improve the spatial profile of a laser is proposed, where the SBS cell is placed as an additional output coupler outside the Fabry-Perot resonator. Alignment of such a laser is very simple because the reflected beam from the SBS mirror propagates along the optic axis of the laser.
{"title":"Improvement of beam quality of a Nd:glass laser by coupling with a stimulated Brillouin scattering cell","authors":"J. Kong, S. Kim, Y. Shin","doi":"10.1109/LEOS.1996.571634","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571634","url":null,"abstract":"Recently, lasers and amplifiers have been developed to obtain a good spatial profile of a laser beam since good beam quality has been required for the best experimental results. In this work a simple method to improve the spatial profile of a laser is proposed, where the SBS cell is placed as an additional output coupler outside the Fabry-Perot resonator. Alignment of such a laser is very simple because the reflected beam from the SBS mirror propagates along the optic axis of the laser.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126869150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571615
M. Wu
We review the current state of the art of micromachining in optoelectronic systems, and discuss in detail the progress of the free-space micro-optical bench (FSMOB) project at UCLA. The FSMOB comprises passive optical elements (diffractive and refractive lenses, gratings, beamsplitters, filters, etc.), micropositioners (translation and rotation stages), and microactuators. Because the micro-optical elements on the FSMOB are precisely positioned by photolithography, they can be "pre-aligned" during the photomask layout. The fabrication of the out-of-plane optical elements are compatible with the micromotors and other microactuators. Therefore, the optical elements can be monolithically integrated with micropositioners and microactuators for optical switching or scanning, or to achieve fine optical alignment.
{"title":"Micromachining for optoelectronic systems","authors":"M. Wu","doi":"10.1109/LEOS.1996.571615","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571615","url":null,"abstract":"We review the current state of the art of micromachining in optoelectronic systems, and discuss in detail the progress of the free-space micro-optical bench (FSMOB) project at UCLA. The FSMOB comprises passive optical elements (diffractive and refractive lenses, gratings, beamsplitters, filters, etc.), micropositioners (translation and rotation stages), and microactuators. Because the micro-optical elements on the FSMOB are precisely positioned by photolithography, they can be \"pre-aligned\" during the photomask layout. The fabrication of the out-of-plane optical elements are compatible with the micromotors and other microactuators. Therefore, the optical elements can be monolithically integrated with micropositioners and microactuators for optical switching or scanning, or to achieve fine optical alignment.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127726898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565207
P. Tayebati, C. Hantzis, R. Sacks
Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.
{"title":"Monolithic p-i-n GaAlAs photorefractive devices","authors":"P. Tayebati, C. Hantzis, R. Sacks","doi":"10.1109/LEOS.1996.565207","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565207","url":null,"abstract":"Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132771796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565093
J. Parrish
Summary form only given. Medical practice is being rapidly redefined by market forces on one side and new technologies on the other. The shift from inpatient to outpatient surgery is a good example of this. Advances in procedural medicine will be built upon the core technologies of high speed computing, robotics, systems engineering, lasers, optics, imaging and biomedical engineering. These technologies cut across traditional disciplines and have the possibilities of making medical care better, safer and less expensive.
{"title":"Lasers and electro-optics in the health care of the future","authors":"J. Parrish","doi":"10.1109/LEOS.1996.565093","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565093","url":null,"abstract":"Summary form only given. Medical practice is being rapidly redefined by market forces on one side and new technologies on the other. The shift from inpatient to outpatient surgery is a good example of this. Advances in procedural medicine will be built upon the core technologies of high speed computing, robotics, systems engineering, lasers, optics, imaging and biomedical engineering. These technologies cut across traditional disciplines and have the possibilities of making medical care better, safer and less expensive.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133649134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571603
A. Bergh
The Optoelectronics Industry Development Association (OIDA), founded in 1991, is a North American partnership of suppliers and users of optoelectronics components. OIDA's objective is to improve the competitiveness of the North American optoelectronics industry. To that end, OIDA has undertaken an Optoelectronic Technology Roadmap Program, intended to identify the critical paths for the development of enabling optoelectronic technologies. A major conclusion of the road map program is that key to driving optoelectronics technology to higher performance, lower cost and improved competitiveness is volume manufacturing. With a few exceptions, North America lacks a large volume product manufacturing infrastructure for optoelectronic components and subassemblies.
{"title":"Manufacturing infrastructure for optoelectronics","authors":"A. Bergh","doi":"10.1109/LEOS.1996.571603","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571603","url":null,"abstract":"The Optoelectronics Industry Development Association (OIDA), founded in 1991, is a North American partnership of suppliers and users of optoelectronics components. OIDA's objective is to improve the competitiveness of the North American optoelectronics industry. To that end, OIDA has undertaken an Optoelectronic Technology Roadmap Program, intended to identify the critical paths for the development of enabling optoelectronic technologies. A major conclusion of the road map program is that key to driving optoelectronics technology to higher performance, lower cost and improved competitiveness is volume manufacturing. With a few exceptions, North America lacks a large volume product manufacturing infrastructure for optoelectronic components and subassemblies.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130341634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565240
P. Smowton, P. Blood
Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.
{"title":"The differential efficiency of GaInP quantum well lasers","authors":"P. Smowton, P. Blood","doi":"10.1109/LEOS.1996.565240","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565240","url":null,"abstract":"Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571586
S. Yuan, Gang Li, H. Tan, C. Jagadish, F. Karouta
In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.
{"title":"InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer","authors":"S. Yuan, Gang Li, H. Tan, C. Jagadish, F. Karouta","doi":"10.1109/LEOS.1996.571586","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571586","url":null,"abstract":"In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131047754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.571954
R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate
Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.
{"title":"Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW","authors":"R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate","doi":"10.1109/LEOS.1996.571954","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571954","url":null,"abstract":"Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132540718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-18DOI: 10.1109/LEOS.1996.565115
J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger
We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.
{"title":"High power Al-free 808 nm laser bars","authors":"J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger","doi":"10.1109/LEOS.1996.565115","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565115","url":null,"abstract":"We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128352244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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