Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598868
Chao Fang, Yuanjin Zheng, C. Law
This paper presents a novel architecture of an ultra wideband (UWB) transmitter circuit. The transmitter is designed for high data rate wireless communication. It employs up conversion concept. The up conversion concept is to multiply Gaussian monocycle pulse with 6.4 GHz sine wave to push the spectrum of Gaussian monocycle pulse into higher frequency band. As a result, the FCC spectral mask can be used efficiently. The transmitter presented contains 6.4 GHz VCO source, divide-by-32 high frequency prescaler, Gaussian monocycle pulse generator, Gilbert cell BPSK modulator, differential to single converter, RF mixer and driven amplifier. The circuits are designed in 0.18 um RFCMOS technology from IMF (Institute of Microelectronics). Simulation showed the correct operation of the circuit for supply voltages of 1.8 V and a power consumption of 195 mW. And the transmitted pulse covers frequency bandwidth from 3.1 GHz to 10.6 GHz. All the circuit simulations are done by HPADS.
提出了一种新型的超宽带(UWB)发射机电路结构。该发射机是为高数据速率无线通信而设计的。它采用向上转换的概念。上转换原理是将高斯单环脉冲与6.4 GHz正弦波相乘，将高斯单环脉冲的频谱推入更高的频段。因此，FCC频谱掩模可以被有效地利用。该发射机由6.4 GHz压控振荡器源、32分频高频预分频器、高斯单周期脉冲发生器、吉尔伯特单元BPSK调制器、差分到单变换器、射频混频器和驱动放大器组成。电路采用国际微电子研究所0.18 um RFCMOS技术设计。仿真结果表明，该电路在电源电压为1.8 V、功耗为195 mW时可以正常工作。传输的脉冲覆盖3.1 GHz到10.6 GHz的频率带宽。所有电路仿真均由HPADS完成。
{"title":"An ultra wideband transmitter based on up conversion architecture","authors":"Chao Fang, Yuanjin Zheng, C. Law","doi":"10.1109/RFIT.2005.1598868","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598868","url":null,"abstract":"This paper presents a novel architecture of an ultra wideband (UWB) transmitter circuit. The transmitter is designed for high data rate wireless communication. It employs up conversion concept. The up conversion concept is to multiply Gaussian monocycle pulse with 6.4 GHz sine wave to push the spectrum of Gaussian monocycle pulse into higher frequency band. As a result, the FCC spectral mask can be used efficiently. The transmitter presented contains 6.4 GHz VCO source, divide-by-32 high frequency prescaler, Gaussian monocycle pulse generator, Gilbert cell BPSK modulator, differential to single converter, RF mixer and driven amplifier. The circuits are designed in 0.18 um RFCMOS technology from IMF (Institute of Microelectronics). Simulation showed the correct operation of the circuit for supply voltages of 1.8 V and a power consumption of 195 mW. And the transmitted pulse covers frequency bandwidth from 3.1 GHz to 10.6 GHz. All the circuit simulations are done by HPADS.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134603921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598874
Seong-Soo Lee, Sang‐Min Han, M. Son, A. Dmitriev, A. Panas
In this paper, the UWB RF transceiver architecture based on a direct chaotic communication system is introduced for wireless headset applications. The direct chaotic communication technology can realize excellent low data rate UWB communication. The low power RF transceiver with chaotic UWB signal of 3 GHz /spl sim/ 5 GHz is implemented for MP3 audio transmission. This simply configured system prototype performs non-coherent detection without up/down mixers. The system is expected E/sub b//N/sub 0/ of 18 dB for PER /spl les/ 10/sup -2/ at 32 bytes length of PSDU, and power consumption of 20 mW in case of 0.13 micron CMOS RFIC fabrication.
{"title":"Low power UWB RF transceiver for wireless headset","authors":"Seong-Soo Lee, Sang‐Min Han, M. Son, A. Dmitriev, A. Panas","doi":"10.1109/RFIT.2005.1598874","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598874","url":null,"abstract":"In this paper, the UWB RF transceiver architecture based on a direct chaotic communication system is introduced for wireless headset applications. The direct chaotic communication technology can realize excellent low data rate UWB communication. The low power RF transceiver with chaotic UWB signal of 3 GHz /spl sim/ 5 GHz is implemented for MP3 audio transmission. This simply configured system prototype performs non-coherent detection without up/down mixers. The system is expected E/sub b//N/sub 0/ of 18 dB for PER /spl les/ 10/sup -2/ at 32 bytes length of PSDU, and power consumption of 20 mW in case of 0.13 micron CMOS RFIC fabrication.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114904349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598903
Shen Dan
A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).
本文提出了一种新颖的CMOS有源混频器拓扑结构，可以在低电压(例如1 v)下工作。通过打开或关闭负载而不是切换电流，开关不需要电压余量。由于开关电容连接到负载，开关可以在电源电压允许的全摆幅下工作，并且不会产生热噪声。该混频器采用0.18 um CMOS技术设计，在1 V电源电压下仿真结果令人满意(增益=7 dB, IP3=7 dBm, NF-11 dB)。
{"title":"A novel low-voltage switched load CMOS active mixer","authors":"Shen Dan","doi":"10.1109/RFIT.2005.1598903","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598903","url":null,"abstract":"A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123604438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598889
Chih-Hung Chen
This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.
{"title":"Issues in high-frequency noise characterization and modeling of MOSFETs","authors":"Chih-Hung Chen","doi":"10.1109/RFIT.2005.1598889","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598889","url":null,"abstract":"This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128426596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598884
Y. Xu, R. Yu
Bandpass sigma-delta modulators commonly employ switch-capacitor (SC) or continuous-time (CT) loop filters. SC sigma-delta modulator can provide robust performance, but at low center frequencies. Its CT counterpart is able to operate at much high frequency, but its performance is often impaired by low-Q CT loop filters and the need of frequency tuning. In this paper, an alternative approach is introduced. Bandpass sigma-delta modulators employing electromechanical resonators as loop filter are described. As a proof-of-concept, a second- and fourth-order bandpass sigma-delta modulator are demonstrated in a 0.35-/spl mu/m CMOS process using off-chip SAW resonators with a resonant frequency of 47.3 MHz. The dynamic ranges, measured in a 200-kHz signal bandwidth when sampled at 189.2 MHz, are 57 dB and 69 dB for the second- and fourth-order modulator, respectively. The chips operate under a 3.3-V single supply with a power dissipation of 30 and 45 mW, respectively.
{"title":"Electromechanical resonator based bandpass sigma-delta modulator for wireless transceivers","authors":"Y. Xu, R. Yu","doi":"10.1109/RFIT.2005.1598884","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598884","url":null,"abstract":"Bandpass sigma-delta modulators commonly employ switch-capacitor (SC) or continuous-time (CT) loop filters. SC sigma-delta modulator can provide robust performance, but at low center frequencies. Its CT counterpart is able to operate at much high frequency, but its performance is often impaired by low-Q CT loop filters and the need of frequency tuning. In this paper, an alternative approach is introduced. Bandpass sigma-delta modulators employing electromechanical resonators as loop filter are described. As a proof-of-concept, a second- and fourth-order bandpass sigma-delta modulator are demonstrated in a 0.35-/spl mu/m CMOS process using off-chip SAW resonators with a resonant frequency of 47.3 MHz. The dynamic ranges, measured in a 200-kHz signal bandwidth when sampled at 189.2 MHz, are 57 dB and 69 dB for the second- and fourth-order modulator, respectively. The chips operate under a 3.3-V single supply with a power dissipation of 30 and 45 mW, respectively.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"36 16","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134259899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598907
Chengyu Huang, Y. Hsin
A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 /spl times/ 0.58 mm/sup 2/.
{"title":"An integrated dual-band SiGe HBT low noise amplifier","authors":"Chengyu Huang, Y. Hsin","doi":"10.1109/RFIT.2005.1598907","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598907","url":null,"abstract":"A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 /spl times/ 0.58 mm/sup 2/.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134272998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598879
H. Okazaki, S. Narahashi, A. Fukuda, T. Miki
A band-reconfigurable power amplifier (PA) is presented that comprises band-switchable matching networks with RF microelectromechanical systems switches. The fabricated triple-band PA achieves the output power of 30 dBm and the power added efficiency of 60% in three different frequency bands, 900 MHz, 1500 MHz, and 2000 MHz. Because the proposed band-reconfigurable PA can be extended to a larger number of frequency bands, it will contribute to "band-free" operation for future mobile terminals.
{"title":"Band-reconfigurable high-efficiency power amplifier using MEMS switches","authors":"H. Okazaki, S. Narahashi, A. Fukuda, T. Miki","doi":"10.1109/RFIT.2005.1598879","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598879","url":null,"abstract":"A band-reconfigurable power amplifier (PA) is presented that comprises band-switchable matching networks with RF microelectromechanical systems switches. The fabricated triple-band PA achieves the output power of 30 dBm and the power added efficiency of 60% in three different frequency bands, 900 MHz, 1500 MHz, and 2000 MHz. Because the proposed band-reconfigurable PA can be extended to a larger number of frequency bands, it will contribute to \"band-free\" operation for future mobile terminals.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121480202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598872
H. Zhao, L. Lei, M. Ba, W. Jemison, J.C.M. Hwang, G. Dang, J.J. Liu, W. Chang
This paper describes a driver circuit for two-dimensional VCSEL arrays. The driver circuit uses a novel low-impedance shunt coplanar waveguide to minimize interchannel crosstalk. To demonstrate our approach, a 10 Gb/s GaAs HBT driver circuit has been designed and fabricated. Both measured and simulated results show a 20 dB crosstalk improvement compared to similar designs using conventional microstrip and coplanar waveguides. To the best of our knowledge, the crosstalk is the lowest reported for a two-dimensional VCSEL array driver in the open literature.
{"title":"A single-ended laser driver with shunt coplanar waveguide for reduced crosstalk","authors":"H. Zhao, L. Lei, M. Ba, W. Jemison, J.C.M. Hwang, G. Dang, J.J. Liu, W. Chang","doi":"10.1109/RFIT.2005.1598872","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598872","url":null,"abstract":"This paper describes a driver circuit for two-dimensional VCSEL arrays. The driver circuit uses a novel low-impedance shunt coplanar waveguide to minimize interchannel crosstalk. To demonstrate our approach, a 10 Gb/s GaAs HBT driver circuit has been designed and fabricated. Both measured and simulated results show a 20 dB crosstalk improvement compared to similar designs using conventional microstrip and coplanar waveguides. To the best of our knowledge, the crosstalk is the lowest reported for a two-dimensional VCSEL array driver in the open literature.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132145757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598893
K. Grenier, D. Dubuc, N. Do, J. Busquere, F. Coccetti, A. Coustou, D. Dragomirescu, R. Plana
This paper aims to give an overview of the new architecture that will be embedded with the next generation of RF and millimeterwave modules that will have to feature new functionalities as flexibility and reconfigurability to match with all the standard that are or that will emerge, adaptability, testability to optimize the performances "on demand" in order to improve the autonomy, the reliability. The last issue deals with the miniaturisation that will be necessary to have a higher compactness for the modules and a reduced weight that is crucial for embedded applications.
{"title":"MEMS IC concept for advanced RF and millimeterwave communications","authors":"K. Grenier, D. Dubuc, N. Do, J. Busquere, F. Coccetti, A. Coustou, D. Dragomirescu, R. Plana","doi":"10.1109/RFIT.2005.1598893","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598893","url":null,"abstract":"This paper aims to give an overview of the new architecture that will be embedded with the next generation of RF and millimeterwave modules that will have to feature new functionalities as flexibility and reconfigurability to match with all the standard that are or that will emerge, adaptability, testability to optimize the performances \"on demand\" in order to improve the autonomy, the reliability. The last issue deals with the miniaturisation that will be necessary to have a higher compactness for the modules and a reduced weight that is crucial for embedded applications.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134514761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598896
Shou Lei, Y. Guo, L. Ong
A novel additional intermediate ground plane structure is proposed in this paper to improve the RF performance of the grounded coplanar waveguide (GCPW) to stripline vertical transition. The ground plane is placed in an inner layer to reduce the distance between the upper and lower grounds, making the approximate impedance of GCPW close to 50 /spl Omega/. Meanwhile, with another additional pad in the inner layer, the inductive effect of the transition can be compensated and improvement has been achieved from 55 GHz to 70 GHz. The presented design was simulated and validated by measurements.
{"title":"Investigation into CPW to stripline vertical transitions for millimeter-wave applications in LTCC","authors":"Shou Lei, Y. Guo, L. Ong","doi":"10.1109/RFIT.2005.1598896","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598896","url":null,"abstract":"A novel additional intermediate ground plane structure is proposed in this paper to improve the RF performance of the grounded coplanar waveguide (GCPW) to stripline vertical transition. The ground plane is placed in an inner layer to reduce the distance between the upper and lower grounds, making the approximate impedance of GCPW close to 50 /spl Omega/. Meanwhile, with another additional pad in the inner layer, the inductive effect of the transition can be compensated and improvement has been achieved from 55 GHz to 70 GHz. The presented design was simulated and validated by measurements.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116115006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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