Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598867
Hui Zheng, S. Lou, L. Leung, H. Luong
This paper addresses design consideration and potential solutions for single-chip CMOS wideband RF transceivers. System architectures are discussed together with their challenges as compared to conventional narrow-band systems. At the circuit level, various wideband design techniques for wideband matching, wideband loading, and wideband frequency tuning range is explored. Finally, detailed design and measurement results of an UWB LNA, an UWB synthesizer, and a wideband VCO is presented.
{"title":"RF system architectures and circuit techniques for wideband transceivers","authors":"Hui Zheng, S. Lou, L. Leung, H. Luong","doi":"10.1109/RFIT.2005.1598867","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598867","url":null,"abstract":"This paper addresses design consideration and potential solutions for single-chip CMOS wideband RF transceivers. System architectures are discussed together with their challenges as compared to conventional narrow-band systems. At the circuit level, various wideband design techniques for wideband matching, wideband loading, and wideband frequency tuning range is explored. Finally, detailed design and measurement results of an UWB LNA, an UWB synthesizer, and a wideband VCO is presented.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127678537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598875
Y. Choi, W. Yeoh
Overcoming the price hurdle that hampers mass-scale RFID adoption, this paper examines the architectural trade-offs as well as design issues involved in the development of a passive RFID tag IC targeted for low cost high volume deployment. Peculiar air-interfacing problems related to power rectification, data demodulation and backscattering modulation are addressed through the discussion of a design example whereby a 2.45-GHz RFID tag IC has been implemented in standard CMOS process.
{"title":"Air-interfacing microwave passive RFID tag in bulk CMOS","authors":"Y. Choi, W. Yeoh","doi":"10.1109/RFIT.2005.1598875","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598875","url":null,"abstract":"Overcoming the price hurdle that hampers mass-scale RFID adoption, this paper examines the architectural trade-offs as well as design issues involved in the development of a passive RFID tag IC targeted for low cost high volume deployment. Peculiar air-interfacing problems related to power rectification, data demodulation and backscattering modulation are addressed through the discussion of a design example whereby a 2.45-GHz RFID tag IC has been implemented in standard CMOS process.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123662583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598891
Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan
AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.
{"title":"Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate","authors":"Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan","doi":"10.1109/RFIT.2005.1598891","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598891","url":null,"abstract":"AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123732628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RFIT.2005.1598890
R. Zeng, Hong Wang
The relation between the location of gate oxide breakdown in deep submicron MOSFETs and noise characteristics has been studied. RF noise in the frequency range of 2 to 18 GHz of the devices with oxide breakdown at different locations are characterized and compared. The results show that degradation of noise parameter subject to gate oxide breakdown is not only related to breakdown hardness but also the location of the oxide breakdown path. For similar breakdown hardness, formation of the breakdown path closer to source side may result in a larger degradation of device RF noise performance. The physical origin behind oxide breakdown induced RF noise in MOSFETs is investigated. The study provides useful information for the use of MOSFETs for low noise circuits.
{"title":"Relation between RF noise and gate oxide breakdown location in deep submicron NMOSFETs","authors":"R. Zeng, Hong Wang","doi":"10.1109/RFIT.2005.1598890","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598890","url":null,"abstract":"The relation between the location of gate oxide breakdown in deep submicron MOSFETs and noise characteristics has been studied. RF noise in the frequency range of 2 to 18 GHz of the devices with oxide breakdown at different locations are characterized and compared. The results show that degradation of noise parameter subject to gate oxide breakdown is not only related to breakdown hardness but also the location of the oxide breakdown path. For similar breakdown hardness, formation of the breakdown path closer to source side may result in a larger degradation of device RF noise performance. The physical origin behind oxide breakdown induced RF noise in MOSFETs is investigated. The study provides useful information for the use of MOSFETs for low noise circuits.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129224482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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