Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022448
G. Bertrand, S. Deleonibus, D. Souil, B. Previtali, C. Caillat, G. Guégan, M. Sanquer, F. Balestra
Characteristics of carrier transport are analyzed on sub 30nm NMOSFETs at temperature ranging from 300K to 20K. In the on-state regime, degradation of the low field mobility on short channel transistors limits velocity overshoot and ballistic transport occurrence. Nevertheless, due to the drastic reduction of the subthreshold swing, large improvement of the Ion/Ioff trade-off is observed. Thus low temperature operation allows transistors to operate closer to their limit. In the linear regime (Vd<10mV), short channel transistors exhibits oscillations on the Id-Vg characteristics that remain up to 75K. These oscillations should be due to state assisted tunneling current.
{"title":"Cryogenic operation of sub-30 nm nMOSFETs: impact of device architecture","authors":"G. Bertrand, S. Deleonibus, D. Souil, B. Previtali, C. Caillat, G. Guégan, M. Sanquer, F. Balestra","doi":"10.1109/WOLTE.2002.1022448","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022448","url":null,"abstract":"Characteristics of carrier transport are analyzed on sub 30nm NMOSFETs at temperature ranging from 300K to 20K. In the on-state regime, degradation of the low field mobility on short channel transistors limits velocity overshoot and ballistic transport occurrence. Nevertheless, due to the drastic reduction of the subthreshold swing, large improvement of the Ion/Ioff trade-off is observed. Thus low temperature operation allows transistors to operate closer to their limit. In the linear regime (Vd<10mV), short channel transistors exhibits oscillations on the Id-Vg characteristics that remain up to 75K. These oscillations should be due to state assisted tunneling current.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122577486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022465
J. Miller, N. Hadacek, C. Jorel, J. Thomassin, V. Bouchiat, M. Faucher, P. Febvre, A. Rousy, G. Lamura
Nitride superconductors and specially niobium nitride are key materials for developing high performance optoelectronic and digital circuits. We are presenting a way to achieve such high frequency devices on R-plane sapphire or MgO substrates. Deposition of thin and flat NbN films with Tc above 10 K, low and reproducible penetration depth (λ L ∼250 nm) and surface resistance (Rs) values up to I THz, is required and obtained by sputtering on a substrate heated in the 300-600°C range. Simple sub-micrometer size HEB bridge structures where patterned even in a very thin (2-5 nm thick) NbN layers offering relaxation times below 30 ps. It is then possible to achieve fast optoelectronic data links and sensors on-chip with high clock frequency NbN RSFQ digital circuits.
氮化物超导体，特别是氮化铌是发展高性能光电和数字电路的关键材料。我们提出了一种在r平面蓝宝石或MgO衬底上实现这种高频器件的方法。通过在300-600°C范围内加热的衬底上溅射，可以获得Tc高于10 K、低且可重复的穿透深度(λ L ~ 250 nm)和表面电阻(Rs)值高达1太赫兹的薄而扁平的NbN薄膜。简单的亚微米尺寸的HEB桥结构，即使在非常薄(2-5纳米厚)的NbN层中也可以提供低于30 ps的松弛时间。然后可以实现快速光电数据链路和具有高时钟频率NbN RSFQ数字电路的片上传感器。
{"title":"Now developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits","authors":"J. Miller, N. Hadacek, C. Jorel, J. Thomassin, V. Bouchiat, M. Faucher, P. Febvre, A. Rousy, G. Lamura","doi":"10.1109/WOLTE.2002.1022465","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022465","url":null,"abstract":"Nitride superconductors and specially niobium nitride are key materials for developing high performance optoelectronic and digital circuits. We are presenting a way to achieve such high frequency devices on R-plane sapphire or MgO substrates. Deposition of thin and flat NbN films with Tc above 10 K, low and reproducible penetration depth (λ L ∼250 nm) and surface resistance (Rs) values up to I THz, is required and obtained by sputtering on a substrate heated in the 300-600°C range. Simple sub-micrometer size HEB bridge structures where patterned even in a very thin (2-5 nm thick) NbN layers offering relaxation times below 30 ps. It is then possible to achieve fast optoelectronic data links and sensors on-chip with high clock frequency NbN RSFQ digital circuits.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133120508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022466
M. Podt, B.G.A. Rolink, J. Flokstra, H. Rogalla
The Josephson tunnel junction is the basic element of a superconducting quantum interference device (SQUID). Amongst other parameters, the junction capacitance determines the characteristics of a (digital) SQUID. In a conventional dc SQUID, reducing the junction capacitance decreases the flux noise of the sensor, whereas in digital SQUIDs, the operating frequency can be increased when reducing the junction capacitance. For digital SQUIDs, this means that not only the flux noise decreases, but also the flux slew rate increases. Slew rates up to l0(8) @ds can be achieved by reducing the junction size to the sub-pm2 level. Using a ramp-type structure allows sub-pm2 Josephson junctions sizes using standard lithography. In this paper we present the first results on low-T, ramp-type Josephson junctions and dc SQUIDs based on these junctions. The first junctions and SQUIDs showed nonhysteretic behavior at 4.2 K caused by the A1 bottom layer in the design.
{"title":"Low-T/sub c/ ramp-type Josephson junctions for SQUIDs","authors":"M. Podt, B.G.A. Rolink, J. Flokstra, H. Rogalla","doi":"10.1109/WOLTE.2002.1022466","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022466","url":null,"abstract":"The Josephson tunnel junction is the basic element of a superconducting quantum interference device (SQUID). Amongst other parameters, the junction capacitance determines the characteristics of a (digital) SQUID. In a conventional dc SQUID, reducing the junction capacitance decreases the flux noise of the sensor, whereas in digital SQUIDs, the operating frequency can be increased when reducing the junction capacitance. For digital SQUIDs, this means that not only the flux noise decreases, but also the flux slew rate increases. Slew rates up to l0(8) @ds can be achieved by reducing the junction size to the sub-pm2 level. Using a ramp-type structure allows sub-pm2 Josephson junctions sizes using standard lithography. In this paper we present the first results on low-T, ramp-type Josephson junctions and dc SQUIDs based on these junctions. The first junctions and SQUIDs showed nonhysteretic behavior at 4.2 K caused by the A1 bottom layer in the design.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125172423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022454
V. I. Rudakov, I. Smirnov
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly ort 100 mm Si substrate using a barium fluoride (BaF 2 ) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2 μm.
利用氟化钡(BaF 2)缓冲层，通过热壁外延直接在100 mm Si衬底上生长出了硫代铅(PbTe)层。采用baf2缓冲层克服了大的晶格和热膨胀失配。用x射线相分析研究了在硅衬底上生长的含baf2缓冲层PbTe薄膜的结构特征。我们在Si上制备了截止波长为5.2 μm的PbTe传感器。
{"title":"Forming PbTe on Si-substrates for IR sensors","authors":"V. I. Rudakov, I. Smirnov","doi":"10.1109/WOLTE.2002.1022454","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022454","url":null,"abstract":"The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly ort 100 mm Si substrate using a barium fluoride (BaF 2 ) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2 μm.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127506217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022442
N. Fourches
A study of n-channel MOS transistors stressed under Fowler Nordheim injection was made both at room temperature and low temperature (77 K). Using alternatively positive and negative bias one can create interface states or bulk oxide charge at 300 K. This is comparable to ionising irradiation. At 77 K a slight reverse annealing occurs, due to the weak neutralization of interface states, under negative bias. Under positive bias no significant threshold voltage shift occurs at low temperature, almost all the interface charge being compensated by the oxide charge.
{"title":"Degradation of hard MOS devices at low temperature","authors":"N. Fourches","doi":"10.1109/WOLTE.2002.1022442","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022442","url":null,"abstract":"A study of n-channel MOS transistors stressed under Fowler Nordheim injection was made both at room temperature and low temperature (77 K). Using alternatively positive and negative bias one can create interface states or bulk oxide charge at 300 K. This is comparable to ionising irradiation. At 77 K a slight reverse annealing occurs, due to the weak neutralization of interface states, under negative bias. Under positive bias no significant threshold voltage shift occurs at low temperature, almost all the interface charge being compensated by the oxide charge.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117009425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022451
A. Mercha, J. M. Rafí, E. Sirnoen, E. Augendre, C. Claeys
Low temperature measurements at 4.2 K and 77 K are performed on n- and p-MOSFETs of a 0.13 μm CMOS technology. Two parasitic current contributions are identified in the subthreshold regime and strong inversion at 4.2 K. The first one is related to a parasitic parallel conduction inherent to Shallow Trench Isolation. Whereas the second one, resulting in a second peak in the linear transconductance, is discussed in terms of a stronger impact of substrate majority carriers due to a higher substrate resistivity at 4.2K. The measured substrate current in n-MOSFETs is probably originating from electrons tunneling from the substrate valence band to the gate. At 4.2 K, the substrate current induces a reduction of the threshold voltage resulting in the measured kink of the b(V G ) characteristic and the second transconductance peak at low drain bias.
{"title":"Parasitic conduction in a 0.13 /spl mu/m CMOS technology at low temperature","authors":"A. Mercha, J. M. Rafí, E. Sirnoen, E. Augendre, C. Claeys","doi":"10.1109/WOLTE.2002.1022451","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022451","url":null,"abstract":"Low temperature measurements at 4.2 K and 77 K are performed on n- and p-MOSFETs of a 0.13 μm CMOS technology. Two parasitic current contributions are identified in the subthreshold regime and strong inversion at 4.2 K. The first one is related to a parasitic parallel conduction inherent to Shallow Trench Isolation. Whereas the second one, resulting in a second peak in the linear transconductance, is discussed in terms of a stronger impact of substrate majority carriers due to a higher substrate resistivity at 4.2K. The measured substrate current in n-MOSFETs is probably originating from electrons tunneling from the substrate valence band to the gate. At 4.2 K, the substrate current induces a reduction of the threshold voltage resulting in the measured kink of the b(V G ) characteristic and the second transconductance peak at low drain bias.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126555991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022479
M. Achani, N. Bourzgui, J. Carru, A. Dégardin, A. Gensbittel, A. Kreisler
This paper deals with the determination of λ and Zs of YBa 2 Cu 3 O 7-δ thin films deposited on MgO single-crystals, from 36 GHz resonant conical cavity measurements performed in the 25 K to 300 K temperature range. The results are discussed in relation with DC electrical transport properties of the films and also with substrate preparation prior to YBaCuO deposition.
本文研究了沉积在MgO单晶上的YBa 2 Cu 3 O 7-δ薄膜的λ和Zs的测定，在25k到300k的温度范围内进行了36ghz谐振锥形腔测量。讨论了这些结果与薄膜的直流电输运特性的关系，以及与沉积YBaCuO之前的衬底制备的关系。
{"title":"Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparation","authors":"M. Achani, N. Bourzgui, J. Carru, A. Dégardin, A. Gensbittel, A. Kreisler","doi":"10.1109/WOLTE.2002.1022479","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022479","url":null,"abstract":"This paper deals with the determination of λ and Zs of YBa 2 Cu 3 O 7-δ thin films deposited on MgO single-crystals, from 36 GHz resonant conical cavity measurements performed in the 25 K to 300 K temperature range. The results are discussed in relation with DC electrical transport properties of the films and also with substrate preparation prior to YBaCuO deposition.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131930148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022444
M. Pavanello, P. G. Der Agopian, J. Martino, D. Flandre
We present in this work is an analysis of die low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fully-depleted SOI nMOSFET.
{"title":"Low temperature operation of graded-channel SOI nMOSFETs for analog applications","authors":"M. Pavanello, P. G. Der Agopian, J. Martino, D. Flandre","doi":"10.1109/WOLTE.2002.1022444","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022444","url":null,"abstract":"We present in this work is an analysis of die low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fully-depleted SOI nMOSFET.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121338854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022470
V. Bondar, M. Vasyliv, V. Davydov, R. Lutsiv, O.D. Pustyinik, O. Khymenko
High temperature superconducting thin films Bi(Pb)-Sr-Ca-Cu-O system were obtained by RF-magnetron ion-plasma sputtering. The detecting bridge-like elements 100-500 mkm wide have been fabricated with laser scribing. The detecting effect was investigated in super high frequency radiation field of 137 GHz.
{"title":"Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structures","authors":"V. Bondar, M. Vasyliv, V. Davydov, R. Lutsiv, O.D. Pustyinik, O. Khymenko","doi":"10.1109/WOLTE.2002.1022470","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022470","url":null,"abstract":"High temperature superconducting thin films Bi(Pb)-Sr-Ca-Cu-O system were obtained by RF-magnetron ion-plasma sputtering. The detecting bridge-like elements 100-500 mkm wide have been fabricated with laser scribing. The detecting effect was investigated in super high frequency radiation field of 137 GHz.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116901220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/WOLTE.2002.1022480
D. Martin, P. Verhoeve, J. de Bruijne, A. Reynolds, A. van Dordrecht, J. Verveer, J. Page, N. Rando, A. Peacock
Superconducting Tunnel Junctions (STJs) have been extensively investigated as photon detectors covering the range from near-infrared to X-ray energies. A 6x6 array of Tantalum junctions has already been used in an optical spectro-photometer. With this camera, the European Space Agency has performed multiple astronomical observations of optical sources using the William Herschel 4.2m telescope at La Palma. Following the success of this programme, we are now developing a second generation camera. The goals of this programme are to increase the field of view of the instrument from 4x4 to 10.5x9, to optimize IR rejection filters, possibly extending the 'red' response to ∼lum and to increase the electronics readout speed. For these purposes, we are developing a new Superconducting Tunnel Junction Array consisting of 10x12 Tantalum/Aluminium devices as well as an improved readout system. In this paper, we review the instrument's architecture and describe the performance of the new detector.
{"title":"Superconducting cameras for optical astronomy","authors":"D. Martin, P. Verhoeve, J. de Bruijne, A. Reynolds, A. van Dordrecht, J. Verveer, J. Page, N. Rando, A. Peacock","doi":"10.1109/WOLTE.2002.1022480","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022480","url":null,"abstract":"Superconducting Tunnel Junctions (STJs) have been extensively investigated as photon detectors covering the range from near-infrared to X-ray energies. A 6x6 array of Tantalum junctions has already been used in an optical spectro-photometer. With this camera, the European Space Agency has performed multiple astronomical observations of optical sources using the William Herschel 4.2m telescope at La Palma. Following the success of this programme, we are now developing a second generation camera. The goals of this programme are to increase the field of view of the instrument from 4x4 to 10.5x9, to optimize IR rejection filters, possibly extending the 'red' response to ∼lum and to increase the electronics readout speed. For these purposes, we are developing a new Superconducting Tunnel Junction Array consisting of 10x12 Tantalum/Aluminium devices as well as an improved readout system. In this paper, we review the instrument's architecture and describe the performance of the new detector.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114449961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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