Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022474
S. Withington, P. Kittara, G. Yassin
We present a numerical procedure for simulating the non-linear behaviour of Superconductor-Insulator-Superconductor (SIS) tunnel-junction mixers. Mixers of this kind are used extensively in high-performance submillimetre-wave astronomical receivers. The procedure is complete in that both the signal and local-oscillator voltages can be at high levels, with significant amounts of harmonic content; also, the full quantum mechanical behaviour of the tunnel junction is taken into account. The initial simulations show that multi-tone analysis can be carried out in a numerically efficient manner, and that saturation, and the attendant generation of IF harmonics, can be modelled rigorously. This work constitutes the first full non-linear model of an SIS mixer, and the theoretical and numerical procedures described, will be of great importance when designing the next generation of heterodyne astronomical receivers.
{"title":"Non-linear two-frequency analysis of SIS mixers through harmonic balance","authors":"S. Withington, P. Kittara, G. Yassin","doi":"10.1109/WOLTE.2002.1022474","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022474","url":null,"abstract":"We present a numerical procedure for simulating the non-linear behaviour of Superconductor-Insulator-Superconductor (SIS) tunnel-junction mixers. Mixers of this kind are used extensively in high-performance submillimetre-wave astronomical receivers. The procedure is complete in that both the signal and local-oscillator voltages can be at high levels, with significant amounts of harmonic content; also, the full quantum mechanical behaviour of the tunnel junction is taken into account. The initial simulations show that multi-tone analysis can be carried out in a numerically efficient manner, and that saturation, and the attendant generation of IF harmonics, can be modelled rigorously. This work constitutes the first full non-linear model of an SIS mixer, and the theoretical and numerical procedures described, will be of great importance when designing the next generation of heterodyne astronomical receivers.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124513258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022440
F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig
Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.
{"title":"SiGe hetero FETs on silicon at cryogenic temperature","authors":"F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig","doi":"10.1109/WOLTE.2002.1022440","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022440","url":null,"abstract":"Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"458 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131432718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022458
A. Pouydebasquel, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat, L. Saminadayar
We present an experimental study of ultra-thin SOI-based nanostructures. The systems have a van der Pauw geometry, with a radius of 2 μm. The resistance per square R is first analyzed in the temperature range 300 K-4.2 K, and for different conditions of back gate voltages (0 V< V R <4 V). The magnetoresistance was measured at very low temperatures (10 mK < T< 900 mK), for magnetic fields -2500 G< B < 2500 G. The experimental results exhibit a negative magnetoresistance that we attribute to quantum interference effects due to time reversed electron paths and known as weak localization. Fundamental properties of the material at low temperatures such as the electron phase coherence length l Φ , the elastic mean free path l, and the mobility μ are then estimated throughout the obtained results.
我们提出了一种超薄soi基纳米结构的实验研究。该系统具有范德保几何形状，半径为2 μm。首先分析了电阻R每平方300 K - 4.2 K温度范围内,对不同条件下的后门电压(0 V < V R < 4 V)磁阻测量在非常低的温度下(10可< T < 900可),磁场-2500 G B < < 2500 G .实验结果表现出负磁阻我们属性量子干涉效应由于时间逆转电子路径和被称为弱本地化。材料在低温下的基本性质，如电子相相干长度l Φ、弹性平均自由程l和迁移率μ。
{"title":"Electron transport in silicon nanostructures based on ultra-thin SOI","authors":"A. Pouydebasquel, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat, L. Saminadayar","doi":"10.1109/WOLTE.2002.1022458","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022458","url":null,"abstract":"We present an experimental study of ultra-thin SOI-based nanostructures. The systems have a van der Pauw geometry, with a radius of 2 μm. The resistance per square R is first analyzed in the temperature range 300 K-4.2 K, and for different conditions of back gate voltages (0 V< V R <4 V). The magnetoresistance was measured at very low temperatures (10 mK < T< 900 mK), for magnetic fields -2500 G< B < 2500 G. The experimental results exhibit a negative magnetoresistance that we attribute to quantum interference effects due to time reversed electron paths and known as weak localization. Fundamental properties of the material at low temperatures such as the electron phase coherence length l Φ , the elastic mean free path l, and the mobility μ are then estimated throughout the obtained results.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124552165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022467
I. A. Khrebtov, A. Tkachenko, K. V. Ivanov, A. Nikolenko, V. Pindyurin
The present work considers the practical possibility of the construction of an absolute radiometer with electrical substitution for power based on the high-T c superconducting YBaCuO film bolometer cooled with liquid nitrogen to measure the power of radiation of the X-ray range circa 1μW with an accuracy of 1%. This accuracy is provided with high sensitivity of the bolometers, having the noise equivalent power about 3.8×10 -12 W/ Hz 1/2 (with modulation) and 2.6×10 -9 W (without modulation). The main sources affecting on an accuracy of the absolute measurements such as external reflection, the passage of radiation through the substrate, photo-stimulated electron emission from the receiving surface, the stability of synchrotron radiation source and instability of cryostat temperature are analysed. The radiometer can be applied to measure absolute power of white and monochromatic synchrotron radiation flows in the spectral range from 80 to 2000eV.
{"title":"Absolute high-T/sub c/ superconducting radiometer with electrical-substitution for x-rays measurements","authors":"I. A. Khrebtov, A. Tkachenko, K. V. Ivanov, A. Nikolenko, V. Pindyurin","doi":"10.1109/WOLTE.2002.1022467","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022467","url":null,"abstract":"The present work considers the practical possibility of the construction of an absolute radiometer with electrical substitution for power based on the high-T c superconducting YBaCuO film bolometer cooled with liquid nitrogen to measure the power of radiation of the X-ray range circa 1μW with an accuracy of 1%. This accuracy is provided with high sensitivity of the bolometers, having the noise equivalent power about 3.8×10 -12 W/ Hz 1/2 (with modulation) and 2.6×10 -9 W (without modulation). The main sources affecting on an accuracy of the absolute measurements such as external reflection, the passage of radiation through the substrate, photo-stimulated electron emission from the receiving surface, the stability of synchrotron radiation source and instability of cryostat temperature are analysed. The radiometer can be applied to measure absolute power of white and monochromatic synchrotron radiation flows in the spectral range from 80 to 2000eV.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129508041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022456
A. Fujiwara, Y. Takahashi
Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.
{"title":"Si nano-devices using an electron-hole system","authors":"A. Fujiwara, Y. Takahashi","doi":"10.1109/WOLTE.2002.1022456","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022456","url":null,"abstract":"Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125438066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022450
B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan
The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.
{"title":"Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs","authors":"B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan","doi":"10.1109/WOLTE.2002.1022450","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022450","url":null,"abstract":"The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124731571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022476
G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy
In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.
{"title":"Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon","authors":"G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy","doi":"10.1109/WOLTE.2002.1022476","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022476","url":null,"abstract":"In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022459
K. Komiya, Y. Omura, T. Oka, M. Nagahara
The experimentally determined conduction mechanisms of gate leakage current are examined for two different soft-breakdown events: analog-soft-breakdown and digital-soft-breakdown. It is strongly suggested that neither variable-range-hopping conduction nor space-charge-limited conduction, by themselves, form the major part of possible conduction mechanisms after analog-soft-breakdown events. On the other hand, it is found that the incremental gate current after digital-soft-breakdown events can be expressed in a simple closed form as functions of temperature and gate voltage; the expression indicates that the post-digital-soft-breakdown current is not ruled by a simple or single conduction mechanism.
{"title":"Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO/sub 2/ films","authors":"K. Komiya, Y. Omura, T. Oka, M. Nagahara","doi":"10.1109/WOLTE.2002.1022459","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022459","url":null,"abstract":"The experimentally determined conduction mechanisms of gate leakage current are examined for two different soft-breakdown events: analog-soft-breakdown and digital-soft-breakdown. It is strongly suggested that neither variable-range-hopping conduction nor space-charge-limited conduction, by themselves, form the major part of possible conduction mechanisms after analog-soft-breakdown events. On the other hand, it is found that the incremental gate current after digital-soft-breakdown events can be expressed in a simple closed form as functions of temperature and gate voltage; the expression indicates that the post-digital-soft-breakdown current is not ruled by a simple or single conduction mechanism.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124320399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-01DOI: 10.1109/WOLTE.2002.1022455
A. Druzhinin, E. Lavitska, I. Maryamova, T. Palewski, A. Kutrakov
Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped with boron up to N=7×10 17 -1×10 19 cm -3 are presented. The dependence of piezoresistance on impurity concentration and temperature was studied. The extremely high piezoresistance was found at the lowest temperatures 4.2-20 K in samples with boron concentration corresponding to the insulating side of the metal-insulator transition in the vicinity of it. A practical application of such a giant piezoresistance in mechanical sensors for cryogenic temperatures is discussed.
本文介绍了掺硼量为N=7×10 17 -1×10 19 cm -3的p型硅微晶的低温抗压性能的研究结果。研究了杂质浓度和温度对压阻性能的影响。在4.2 ~ 20 K的最低温度下，硼浓度与金属-绝缘体转变的绝缘侧相对应的样品具有极高的压阻。讨论了这种巨大压电阻在低温机械传感器中的实际应用。
{"title":"Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures","authors":"A. Druzhinin, E. Lavitska, I. Maryamova, T. Palewski, A. Kutrakov","doi":"10.1109/WOLTE.2002.1022455","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022455","url":null,"abstract":"Results of the studies of the low-temperature piezoresistance for p-type silicon microcrystals doped with boron up to N=7×10 17 -1×10 19 cm -3 are presented. The dependence of piezoresistance on impurity concentration and temperature was studied. The extremely high piezoresistance was found at the lowest temperatures 4.2-20 K in samples with boron concentration corresponding to the insulating side of the metal-insulator transition in the vicinity of it. A practical application of such a giant piezoresistance in mechanical sensors for cryogenic temperatures is discussed.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130969250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Hohne, M. Buhler, F. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern, B. Simmnacher, R. Weiland, D. Wernicke
The need to analyze small amounts of materials on surfaces e.g. in semiconductor industry drives the development of high resolution X-ray spectrometers based on superconducting detector technology. Since low excitation energies needed for high spatial resolution in Field Emission Scanning Electron Microscopes (FESEM) yield only X-ray lines in the lower part of the X-ray spectrum (<5keV), line overlaps become a serious issue in the spectral analysis. This problem can be overcome with superconducting detector technology having better energy resolution and thus the ability to separate X-ray lines of important material combinations. For industrial applications the cooling system for the superconducting sensor plays an important role, since liquid coolants are not being tolerated in clean room environments. This work will cover the basic needs of the materials analyst as well as the practical implementation of superconducting X-ray spectrometers for industrial applications.
{"title":"Cryogenic detector systems for materials analysis","authors":"J. Hohne, M. Buhler, F. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern, B. Simmnacher, R. Weiland, D. Wernicke","doi":"10.1051/JP420020050","DOIUrl":"https://doi.org/10.1051/JP420020050","url":null,"abstract":"The need to analyze small amounts of materials on surfaces e.g. in semiconductor industry drives the development of high resolution X-ray spectrometers based on superconducting detector technology. Since low excitation energies needed for high spatial resolution in Field Emission Scanning Electron Microscopes (FESEM) yield only X-ray lines in the lower part of the X-ray spectrum (<5keV), line overlaps become a serious issue in the spectral analysis. This problem can be overcome with superconducting detector technology having better energy resolution and thus the ability to separate X-ray lines of important material combinations. For industrial applications the cooling system for the superconducting sensor plays an important role, since liquid coolants are not being tolerated in clean room environments. This work will cover the basic needs of the materials analyst as well as the practical implementation of superconducting X-ray spectrometers for industrial applications.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125897251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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