Z. Tian, E. Decuir, P. Wijewarnasuriya, J. Pattison, N. Gautam, S. Krishna, N. Dhar, R. Welser, A. Sood
This paper describes our efforts on the development of low dark current long-wave infrared (LWIR) photodetectors based on type-II InAs/GaSb strained superlattices. By adopting a so-called pBiBn structure, a hybrid between the conventional PIN structure and unipolar barrier concepts, suppressed dark current and near-zero-bias operation are obtained, respectively. The LWIR photodetector has a dark current density as low as 1.42×10-5 A/cm2 at -60 mV, and R0A of 5365 Ωcm2 at 76 K. The measured peak detectivity at 10.2 µm of 8.7×1010 cmHz1/2W-1 is obtained at -60 mV at 76 K. To further improve the device performances, a newer design with longer cut-off wavelength targeted for near zero-bias was also realized. This 2-µm-thick device exhibits a quantum efficiency of 20% at 10 µm under zero-bias.
{"title":"Low-dark current structures for long-wavelength Type-II strained layer superlattice photodiodes","authors":"Z. Tian, E. Decuir, P. Wijewarnasuriya, J. Pattison, N. Gautam, S. Krishna, N. Dhar, R. Welser, A. Sood","doi":"10.1117/12.2015489","DOIUrl":"https://doi.org/10.1117/12.2015489","url":null,"abstract":"This paper describes our efforts on the development of low dark current long-wave infrared (LWIR) photodetectors based on type-II InAs/GaSb strained superlattices. By adopting a so-called pBiBn structure, a hybrid between the conventional PIN structure and unipolar barrier concepts, suppressed dark current and near-zero-bias operation are obtained, respectively. The LWIR photodetector has a dark current density as low as 1.42×10-5 A/cm2 at -60 mV, and R0A of 5365 Ωcm2 at 76 K. The measured peak detectivity at 10.2 µm of 8.7×1010 cmHz1/2W-1 is obtained at -60 mV at 76 K. To further improve the device performances, a newer design with longer cut-off wavelength targeted for near zero-bias was also realized. This 2-µm-thick device exhibits a quantum efficiency of 20% at 10 µm under zero-bias.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"NS20 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123423030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hitesh A. Basantani, Hang-Beum Shin, T. Jackson, M. Horn
Uncooled IR bolometers form an integral part of thermal imaging cameras. Vanadium oxide material currently used for IR imaging has a resistivity between 0.1 and 1 ohm-cm and a temperature coefficient of resistance (TCR) between -1.4%K-1 to -2.4%K-1. Higher TCR materials are desired, however, such materials inevitably have higher resistivity and therefore higher electrical resistance in a lateral resistor configuration. A high resistance leads to an increase in the Johnson-Nyquist noise of the bias-induced current, thereby limiting the performance of bolometers using high resistivity material. In this work, we demonstrate high resistivity, high TCR VOx and propose the use of a vertically integrated resistor configuration an alternate pixel structure design with lower Johnson noise when compared with the conventional lateral pixel design. Biased Target Ion Beam Deposition was used to deposit high resistivity vanadium oxide thin-films (~85 nm thick). Electrical characterization of lateral resistor structures showed resistivities ranging from 2 ⨯ 103 ohm-cm to 2.1 ⨯ 104 ohm-cm, TCR varying from -2.6%K-1 to -5%K-1, Johnson noise (pixel resistance of 1.3GΩ) of 4.7 to 6μV/√Hz and 1/f noise (normalized Hooge’s parameter (α/n)) of 5 ⨯ 10-21 to 5 ⨯ 10-18 cm-3. In contrast, the through-film resistor structures showed significantly higher resistivities at 3 ⨯ 104 Ohm-cm to 1.55 ⨯ 105 Ohm-cm, TCR similar to lateral resistive structure between -2.6%K-1 to -5.1%K-1, immeasurably low Johnson noise (pixel resistance of 48KΩ) and normalized Hooge’s parameter ranging from to 5⨯10-21 to 1⨯10-18 cm-3. These results indicate the possible use of through-film resistors as an alternative to the conventional lateral-resistor design currently used in uncooled imaging microbolometers.
{"title":"Vertically integrated pixel microbolometers for IR imaging using high-resistivity VOx","authors":"Hitesh A. Basantani, Hang-Beum Shin, T. Jackson, M. Horn","doi":"10.1117/12.2016292","DOIUrl":"https://doi.org/10.1117/12.2016292","url":null,"abstract":"Uncooled IR bolometers form an integral part of thermal imaging cameras. Vanadium oxide material currently used for IR imaging has a resistivity between 0.1 and 1 ohm-cm and a temperature coefficient of resistance (TCR) between -1.4%K-1 to -2.4%K-1. Higher TCR materials are desired, however, such materials inevitably have higher resistivity and therefore higher electrical resistance in a lateral resistor configuration. A high resistance leads to an increase in the Johnson-Nyquist noise of the bias-induced current, thereby limiting the performance of bolometers using high resistivity material. In this work, we demonstrate high resistivity, high TCR VOx and propose the use of a vertically integrated resistor configuration an alternate pixel structure design with lower Johnson noise when compared with the conventional lateral pixel design. Biased Target Ion Beam Deposition was used to deposit high resistivity vanadium oxide thin-films (~85 nm thick). Electrical characterization of lateral resistor structures showed resistivities ranging from 2 ⨯ 103 ohm-cm to 2.1 ⨯ 104 ohm-cm, TCR varying from -2.6%K-1 to -5%K-1, Johnson noise (pixel resistance of 1.3GΩ) of 4.7 to 6μV/√Hz and 1/f noise (normalized Hooge’s parameter (α/n)) of 5 ⨯ 10-21 to 5 ⨯ 10-18 cm-3. In contrast, the through-film resistor structures showed significantly higher resistivities at 3 ⨯ 104 Ohm-cm to 1.55 ⨯ 105 Ohm-cm, TCR similar to lateral resistive structure between -2.6%K-1 to -5.1%K-1, immeasurably low Johnson noise (pixel resistance of 48KΩ) and normalized Hooge’s parameter ranging from to 5⨯10-21 to 1⨯10-18 cm-3. These results indicate the possible use of through-film resistors as an alternative to the conventional lateral-resistor design currently used in uncooled imaging microbolometers.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131277652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Haugan, G. Brown, M. Kim, K. Mahalingam, S. Elhamri, W. Mitchel, L. Grazulis
We report ternary growth studies to develop a largely strained InAs/InGaSb superlattice (SL) material for very long wavelength infrared (VLWIR) detection. We select a SL structure of 47.0 Å InAs/21.5 Å In0.25Ga0.75Sb that theoretically designed for the greatest possible detectivity, and tune growth conditions for the best possible material quality. Since material quality of grown SLs is largely influenced by extrinsic defects such as nonradiative recombination centers and residual background dopings in the grown layers, we investigate the effect of growth temperature (Tg) on the spectral responses and charge carrier transports using photoconductivity and temperature-dependent Hall effect measurements. Results indicate that molecular beam epitaxy (MBE) growth process we developed produces a consistent gap near 50 meV within a range of few meV, but SL spectral sensing determined by photoresponse (PR) intensity is very sensitive to the minor changes in Tg. For the SLs grown from 390 to 470 °C, a PR signal gradually increases as Tg increases from 400 to 440 °C by reaching a maximum at 440 °C. Outside this growth window, the SL quality deteriorates very rapidly. All SLs grown for this study were n-type, but the mobility varied in a variety of range between 11,300 and 21 cm2/Vs. The mobility of the SL grown at 440 °C was approximately 10,000 V/cm2 with a sheet carrier concentration of 5 × 1011 cm-2, but the mobility precipitously dropped to 21 cm2/Vs at higher temperatures. Using the knowledge we learned from this growth set, other growth parameters for the MBE ternary SL growth should be further adjusted in order to achieve high performance of InAs/InGaSb materials suitable for VLWIR detection.
我们报道了一种用于超长波长红外(VLWIR)探测的大应变InAs/InGaSb超晶格(SL)材料的三元生长研究。我们选择了47.0 Å InAs/21.5 Å In0.25Ga0.75Sb的SL结构，理论上设计了最大的探测率，并调整了生长条件以获得最佳的材料质量。由于生长SLs的材料质量在很大程度上受到生长层中非辐射复合中心和残余背景掺杂等外在缺陷的影响，我们利用光电导率和温度相关的霍尔效应测量研究了生长温度(Tg)对光谱响应和载流子输运的影响。结果表明，我们开发的分子束外延(MBE)生长工艺在几个meV的范围内，在50 meV附近产生一致的间隙，但由光响应(PR)强度确定的SL光谱感知对Tg的微小变化非常敏感。从390℃到470℃生长的SLs, PR信号随着Tg从400℃到440℃的增加而逐渐增加，在440℃达到最大值。在这个生长窗口之外，SL质量迅速恶化。本研究中生长的所有SLs均为n型，但迁移率在11,300 - 21 cm2/Vs之间变化。当载流子浓度为5 × 1011 cm-2时，在440℃下生长的SL迁移率约为10,000 V/cm2，但在较高温度下迁移率急剧下降至21 cm2/Vs。利用我们从这个生长集中学到的知识，应该进一步调整MBE三元SL生长的其他生长参数，以实现适合VLWIR检测的InAs/InGaSb材料的高性能。
{"title":"Exploring optimum growth window for high quality InAs/GaInSb superlattice materials","authors":"H. Haugan, G. Brown, M. Kim, K. Mahalingam, S. Elhamri, W. Mitchel, L. Grazulis","doi":"10.1117/12.2015314","DOIUrl":"https://doi.org/10.1117/12.2015314","url":null,"abstract":"We report ternary growth studies to develop a largely strained InAs/InGaSb superlattice (SL) material for very long wavelength infrared (VLWIR) detection. We select a SL structure of 47.0 Å InAs/21.5 Å In0.25Ga0.75Sb that theoretically designed for the greatest possible detectivity, and tune growth conditions for the best possible material quality. Since material quality of grown SLs is largely influenced by extrinsic defects such as nonradiative recombination centers and residual background dopings in the grown layers, we investigate the effect of growth temperature (Tg) on the spectral responses and charge carrier transports using photoconductivity and temperature-dependent Hall effect measurements. Results indicate that molecular beam epitaxy (MBE) growth process we developed produces a consistent gap near 50 meV within a range of few meV, but SL spectral sensing determined by photoresponse (PR) intensity is very sensitive to the minor changes in Tg. For the SLs grown from 390 to 470 °C, a PR signal gradually increases as Tg increases from 400 to 440 °C by reaching a maximum at 440 °C. Outside this growth window, the SL quality deteriorates very rapidly. All SLs grown for this study were n-type, but the mobility varied in a variety of range between 11,300 and 21 cm2/Vs. The mobility of the SL grown at 440 °C was approximately 10,000 V/cm2 with a sheet carrier concentration of 5 × 1011 cm-2, but the mobility precipitously dropped to 21 cm2/Vs at higher temperatures. Using the knowledge we learned from this growth set, other growth parameters for the MBE ternary SL growth should be further adjusted in order to achieve high performance of InAs/InGaSb materials suitable for VLWIR detection.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114942781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.
{"title":"Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes","authors":"S. Datta, A. Joshi, J. Rue","doi":"10.1117/12.2015609","DOIUrl":"https://doi.org/10.1117/12.2015609","url":null,"abstract":"We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116557465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Ergun, M. Hoştut, T. Tansel, A. Muti, A. Kılıç, R. Turan, A. Aydinli
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6x10-3 A/cm2 and 148 Ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings.
{"title":"High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers","authors":"Y. Ergun, M. Hoştut, T. Tansel, A. Muti, A. Kılıç, R. Turan, A. Aydinli","doi":"10.1117/12.2016133","DOIUrl":"https://doi.org/10.1117/12.2016133","url":null,"abstract":"We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6x10-3 A/cm2 and 148 Ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122499171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Presented is an uncooled surface-micromachined thermoelectric (TE) infrared detector that features P-doped and N-doped polysilicon wires as the thermocouple pair and an umbrella like optical cavity as the absorber to achieve a high fill factor. A responsivity as high as1800V/W @5Hz and a response time of smaller than ~10ms are measured in vacuum when viewing a 500K blackbody with no concentrating optics at room temperature. The reported responsivity is more than 10 times higher than the value reported earlier [1] from similar structures due to the improvement in the thermoelectric coefficient and the thermal isolation of the cell. Finite Element Analysis is used to predict the detector’s performance and the results are in a good agreement with the measurements. The dominant source of noise is also investigated in these thermoelectric IR detectors and it is believed to be Johnson noise when they are operated under an open circuit condition. The fabricated detectors have resistances in the range of 20 to 70KOhm resulting in a Johnson noise of about 20 to 36 nV/Hz^0.5. The specific detectivity (D*) is calculated to be higher than 10^8cmHz^0.5/W. To the best of our knowledge, this is the highest reported D* for such small thermoelectric IR sensors. The measured NETD is 120mK with an f/1.5 lens.
{"title":"A low-noise silicon-based 20μm*20μm uncooled thermoelectric infrared detector","authors":"M. Modarres-Zadeh, R. Abdolvand","doi":"10.1117/12.2016283","DOIUrl":"https://doi.org/10.1117/12.2016283","url":null,"abstract":"Presented is an uncooled surface-micromachined thermoelectric (TE) infrared detector that features P-doped and N-doped polysilicon wires as the thermocouple pair and an umbrella like optical cavity as the absorber to achieve a high fill factor. A responsivity as high as1800V/W @5Hz and a response time of smaller than ~10ms are measured in vacuum when viewing a 500K blackbody with no concentrating optics at room temperature. The reported responsivity is more than 10 times higher than the value reported earlier [1] from similar structures due to the improvement in the thermoelectric coefficient and the thermal isolation of the cell. Finite Element Analysis is used to predict the detector’s performance and the results are in a good agreement with the measurements. The dominant source of noise is also investigated in these thermoelectric IR detectors and it is believed to be Johnson noise when they are operated under an open circuit condition. The fabricated detectors have resistances in the range of 20 to 70KOhm resulting in a Johnson noise of about 20 to 36 nV/Hz^0.5. The specific detectivity (D*) is calculated to be higher than 10^8cmHz^0.5/W. To the best of our knowledge, this is the highest reported D* for such small thermoelectric IR sensors. The measured NETD is 120mK with an f/1.5 lens.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132511610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Requirements for vehicle mounted infrared sensors, especially as imagers evolve to high definition (HD) format will be detailed and analyzed. Lessons learned from integrations of infrared sensors on armored vehicles, unarmored military vehicles and commercial automobiles will be discussed. Comparisons between sensors for driving and those for situation awareness, targeting and other functions will be presented. Conclusions will be drawn regarding future applications and installations. New business requirements for more advanced digital image processing algorithms in the sensor system will be discussed. Examples of these are smarter contrast/brightness adjustments algorithms, detail enhancement, intelligent blending (IR-Vis) modes, and augmented reality.
{"title":"Overview of benefits, challenges, and requirements of wheeled-vehicle mounted infrared sensors","authors":"J. L. Miller, P. Clayton, Stefan Olsson","doi":"10.1117/12.2018866","DOIUrl":"https://doi.org/10.1117/12.2018866","url":null,"abstract":"Requirements for vehicle mounted infrared sensors, especially as imagers evolve to high definition (HD) format will be detailed and analyzed. Lessons learned from integrations of infrared sensors on armored vehicles, unarmored military vehicles and commercial automobiles will be discussed. Comparisons between sensors for driving and those for situation awareness, targeting and other functions will be presented. Conclusions will be drawn regarding future applications and installations. New business requirements for more advanced digital image processing algorithms in the sensor system will be discussed. Examples of these are smarter contrast/brightness adjustments algorithms, detail enhancement, intelligent blending (IR-Vis) modes, and augmented reality.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116642288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seventeen (17) µm pixel Long Wave Infrared (LWIR) Sensors based on vanadium oxide (VOx) micro-bolometers have been in full rate production at BAE Systems’ Night Vision Sensors facility in Lexington, MA for the past five years.[1] We introduce here a commercial camera core product, the Airia-MTM imaging module, in a VGA format that reads out in 30 and 60Hz progressive modes. The camera core is architected to conserve power with all digital interfaces from the readout integrated circuit through video output. The architecture enables a variety of input/output interfaces including Camera Link, USB 2.0, micro-display drivers and optional RS-170 analog output supporting legacy systems. The modular board architecture of the electronics facilitates hardware upgrades allow us to capitalize on the latest high performance low power electronics developed for the mobile phones. Software and firmware is field upgradeable through a USB 2.0 port. The USB port also gives users access to up to 100 digitally stored (lossless) images.
{"title":"BAE Systems' 17μm LWIR camera core for civil, commercial, and military applications","authors":"Jeffrey Lee, Christian Rodriguez, R. Blackwell","doi":"10.1117/12.2018090","DOIUrl":"https://doi.org/10.1117/12.2018090","url":null,"abstract":"Seventeen (17) µm pixel Long Wave Infrared (LWIR) Sensors based on vanadium oxide (VOx) micro-bolometers have been in full rate production at BAE Systems’ Night Vision Sensors facility in Lexington, MA for the past five years.[1] We introduce here a commercial camera core product, the Airia-MTM imaging module, in a VGA format that reads out in 30 and 60Hz progressive modes. The camera core is architected to conserve power with all digital interfaces from the readout integrated circuit through video output. The architecture enables a variety of input/output interfaces including Camera Link, USB 2.0, micro-display drivers and optional RS-170 analog output supporting legacy systems. The modular board architecture of the electronics facilitates hardware upgrades allow us to capitalize on the latest high performance low power electronics developed for the mobile phones. Software and firmware is field upgradeable through a USB 2.0 port. The USB port also gives users access to up to 100 digitally stored (lossless) images.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128826057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
U. Mizrahi, N. Argaman, S. Elkind, A. Giladi, Y. Hirsh, M. Labilov, I. Pivnik, N. Shiloah, M. Singer, A. Tuito, M. Ben-Ezra, I. Shtrichman
Long range sights and targeting systems require a combination of high spatial resolution, low temporal NETD, and wide field of view. For practical electro-optical systems it is hard to support these constraints simultaneously. Moreover, achieving these needs with the relatively low-cost Uncooled μ-Bolometer technology is a major challenge in the design and implementation of both the bolometer pixel and the Readout Integrated Circuit (ROIC). In this work we present measured results from a new, large format (1024×768) detector array, with 17μm pitch. This detector meets the demands of a typical armored vehicle sight with its high resolution and large format, together with low NETD of better than 35mK (at F/1, 30Hz). We estimate a Recognition Range for a NATO target of better than 4 km at all relevant atmospheric conditions, which is better than standard 2nd generation scanning array cooled detector. A new design of the detector package enables improved stability of the Non-Uniformity Correction (NUC) to environmental temperature drifts.
{"title":"Large-format 17μm high-end VOx μ-bolometer infrared detector","authors":"U. Mizrahi, N. Argaman, S. Elkind, A. Giladi, Y. Hirsh, M. Labilov, I. Pivnik, N. Shiloah, M. Singer, A. Tuito, M. Ben-Ezra, I. Shtrichman","doi":"10.1117/12.2015653","DOIUrl":"https://doi.org/10.1117/12.2015653","url":null,"abstract":"Long range sights and targeting systems require a combination of high spatial resolution, low temporal NETD, and wide field of view. For practical electro-optical systems it is hard to support these constraints simultaneously. Moreover, achieving these needs with the relatively low-cost Uncooled μ-Bolometer technology is a major challenge in the design and implementation of both the bolometer pixel and the Readout Integrated Circuit (ROIC). In this work we present measured results from a new, large format (1024×768) detector array, with 17μm pitch. This detector meets the demands of a typical armored vehicle sight with its high resolution and large format, together with low NETD of better than 35mK (at F/1, 30Hz). We estimate a Recognition Range for a NATO target of better than 4 km at all relevant atmospheric conditions, which is better than standard 2nd generation scanning array cooled detector. A new design of the detector package enables improved stability of the Non-Uniformity Correction (NUC) to environmental temperature drifts.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115784620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.
{"title":"A low-noise, extended dynamic range 1.3 megapixel InGaAs array","authors":"W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren","doi":"10.1117/12.2019030","DOIUrl":"https://doi.org/10.1117/12.2019030","url":null,"abstract":"Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123968474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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