Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160166
U. Pfeiffer
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. In this paper, recent attempts to operate SiGe and CMOS technologies beyond their transistor cut-off frequencies will be presented. Among others, the circuit designs include monolithically integrated THz CMOS focal-plane arrays and 820 GHz sub-harmonically pumped SiGe HBT imaging chip-sets including integrated antennas.
{"title":"Silicon CMOS/SiGe transceiver circuits for THz applications","authors":"U. Pfeiffer","doi":"10.1109/SIRF.2012.6160166","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160166","url":null,"abstract":"The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. In this paper, recent attempts to operate SiGe and CMOS technologies beyond their transistor cut-off frequencies will be presented. Among others, the circuit designs include monolithically integrated THz CMOS focal-plane arrays and 820 GHz sub-harmonically pumped SiGe HBT imaging chip-sets including integrated antennas.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"648 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116418439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160164
H. Rucker, B. Heinemann, A. Fox
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.
{"title":"Half-Terahertz SiGe BiCMOS technology","authors":"H. Rucker, B. Heinemann, A. Fox","doi":"10.1109/SIRF.2012.6160164","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160164","url":null,"abstract":"This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122074976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160116
Ji-Young Lee, Hyunkyu Park, Ho-Jun Chang, T. Yun
A common-gate (CG) low-noise amplifier using the current-reused technique is proposed for both ultra-wideband and low-power consumption. The CG amplifier, employed at the input stage, enables wide-band input matching with low transconductance and the frequency-independent noise figure (NF), compared to the common-source amplifier. The current-reused technique is adopted in order to reduce the power dissipation while achieving a reasonable power gain. Furthermore, the shunt and series peaking technique is adopted for a wide bandwidth. The proposed LNA obtains a 3-dB bandwidth from 2.4 to 11.2 GHz, a maximum power gain of 14.8 dB, a minimum NF of 3.9 dB, and an IIP3 of -11.5 dBm while consuming 3.4 mW from a 1.5 V supply. A 0.18-μm CMOS process is utilized for the fabrication.
{"title":"3.4-mW common-gate and current-reused UWB LNA","authors":"Ji-Young Lee, Hyunkyu Park, Ho-Jun Chang, T. Yun","doi":"10.1109/SIRF.2012.6160116","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160116","url":null,"abstract":"A common-gate (CG) low-noise amplifier using the current-reused technique is proposed for both ultra-wideband and low-power consumption. The CG amplifier, employed at the input stage, enables wide-band input matching with low transconductance and the frequency-independent noise figure (NF), compared to the common-source amplifier. The current-reused technique is adopted in order to reduce the power dissipation while achieving a reasonable power gain. Furthermore, the shunt and series peaking technique is adopted for a wide bandwidth. The proposed LNA obtains a 3-dB bandwidth from 2.4 to 11.2 GHz, a maximum power gain of 14.8 dB, a minimum NF of 3.9 dB, and an IIP3 of -11.5 dBm while consuming 3.4 mW from a 1.5 V supply. A 0.18-μm CMOS process is utilized for the fabrication.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132534657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160152
C. Wipf
An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress.
{"title":"A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress","authors":"C. Wipf","doi":"10.1109/SIRF.2012.6160152","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160152","url":null,"abstract":"An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"34 46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132827997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/SIRF.2012.6160135
J. Yun, Hyunchul Kim, H. Seo, J. Rieh
In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9-141.5 GHz (14.7 GHz) and an operating range of 126.9-150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.
{"title":"A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology","authors":"J. Yun, Hyunchul Kim, H. Seo, J. Rieh","doi":"10.1109/SIRF.2012.6160135","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160135","url":null,"abstract":"In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9-141.5 GHz (14.7 GHz) and an operating range of 126.9-150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114368643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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