Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517657
M. Swaminathan, Seunghyun Hwang, N. Altunyurt, S. Min
This paper presents the design of filters and antennas in advanced polymers based on a new material called RXP. Integration capability of the RXP and the performance of WLAN filter design have been verified through the measurement data presented in this paper. Simulated results of 60GHz filters and antennas are also included in this paper. RXP provides low cost and promising high performance advanced polymer solution for wireless applications operating around microwave and millimeter frequencies.
{"title":"RF system integration and miniaturization using advanced polymers","authors":"M. Swaminathan, Seunghyun Hwang, N. Altunyurt, S. Min","doi":"10.1109/MWSYM.2010.5517657","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517657","url":null,"abstract":"This paper presents the design of filters and antennas in advanced polymers based on a new material called RXP. Integration capability of the RXP and the performance of WLAN filter design have been verified through the measurement data presented in this paper. Simulated results of 60GHz filters and antennas are also included in this paper. RXP provides low cost and promising high performance advanced polymer solution for wireless applications operating around microwave and millimeter frequencies.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121283626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517468
S. Todd, J. Bowers, N. MacDonald
A micromachining process has been developed to create high impedance and low loss high aspect ratio coplanar waveguide (HARC) on low resistivity silicon. The process uses silicon DRIE to create an array of tall mesas that are spaced with a precise pitch. The silicon mesa array is then merged into a single solid SiO2 mesa using thermal oxidation. The solid SiO2 mesa creates a wide dielectric for use in high impedance HARC. The complete fabrication process includes DRIE, thermal oxidation, electroplating, planarization, and substrate removal to create HARC on low resistivity silicon with a planar surface. A high impedance HARC has been fabricated on silicon using this method. Measurements show that silicon substrate removal increases the line impedance from 20 Ω to 57 Ω, reduces effective dielectric constant from 6 to 2, and reduces attenuation constant from 33 dB/cm to 4 dB/cm @ 30 GHz. Measurements are compared to an analytical model derived for HARC.
{"title":"Micromachined high aspect ratio coplanar waveguide with high impedance and low loss on low resistivity silicon","authors":"S. Todd, J. Bowers, N. MacDonald","doi":"10.1109/MWSYM.2010.5517468","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517468","url":null,"abstract":"A micromachining process has been developed to create high impedance and low loss high aspect ratio coplanar waveguide (HARC) on low resistivity silicon. The process uses silicon DRIE to create an array of tall mesas that are spaced with a precise pitch. The silicon mesa array is then merged into a single solid SiO2 mesa using thermal oxidation. The solid SiO2 mesa creates a wide dielectric for use in high impedance HARC. The complete fabrication process includes DRIE, thermal oxidation, electroplating, planarization, and substrate removal to create HARC on low resistivity silicon with a planar surface. A high impedance HARC has been fabricated on silicon using this method. Measurements show that silicon substrate removal increases the line impedance from 20 Ω to 57 Ω, reduces effective dielectric constant from 6 to 2, and reduces attenuation constant from 33 dB/cm to 4 dB/cm @ 30 GHz. Measurements are compared to an analytical model derived for HARC.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121619935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517055
H. M. Cheema, X. Yu, R. Mahmoudi, P. van Zeijl, Arthur van Roermund1
A dual-mode mm-wave injection locked frequency divider operating at 39.5 and 59.5 GHz is presented. Achieving a locking range of 18% and 20% in divide-by-2 and 3 modes, it consumes 4 mW from a 0.8 V supply. Implemented in a bulk CMOS 65nm technology, it occupies a core area of 0.03mm2. The dual-mode operation is enabled by differential direct injection and Miller capacitance de-tuning. Two new figure-of-merits for proper comparison of ILFDs are also presented.
{"title":"A dual-mode mm-wave injection-locked frequency divider with greater than 18% locking range in 65nm CMOS","authors":"H. M. Cheema, X. Yu, R. Mahmoudi, P. van Zeijl, Arthur van Roermund1","doi":"10.1109/MWSYM.2010.5517055","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517055","url":null,"abstract":"A dual-mode mm-wave injection locked frequency divider operating at 39.5 and 59.5 GHz is presented. Achieving a locking range of 18% and 20% in divide-by-2 and 3 modes, it consumes 4 mW from a 0.8 V supply. Implemented in a bulk CMOS 65nm technology, it occupies a core area of 0.03mm2. The dual-mode operation is enabled by differential direct injection and Miller capacitance de-tuning. Two new figure-of-merits for proper comparison of ILFDs are also presented.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114007349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518138
Hiroyuki Nakamura, H. Nakanishi, T. Tsurunari, J. Fujiwara, Y. Hamaoka, R. Goto
This paper describes the SiO2/Al/LiNbO3 structure for the SAW duplexer. Although this structure has large electromechanical coupling coefficient, it also supports unwanted spurious responses. They are categorized into two types of the Rayleigh-mode and transverse-mode. We have developed the novel spurious suppression techniques for these spurious; the SiO2 shape control technique for Rayleigh-mode and the scattered dummy electrode weighting for transverse-mode. We applied the proposed techniques to the balanced-type SAW duplexer for UMTS Band I system. The developed SAW duplexer was installed into a 2.5×2.0×0.5 mm3 package, and exhibited low insertion loss and high out-of-band rejection. The insertion losses in the Tx and Rx bands are 1.3dB and 2.0dB, respectively. The rejections in the Tx and Rx bands are 54 dB and 48 dB, respectively.
{"title":"Small-sized SAW duplexer on non-flat SiO2/Al/LiNbO3 structure for UMTS Band I system","authors":"Hiroyuki Nakamura, H. Nakanishi, T. Tsurunari, J. Fujiwara, Y. Hamaoka, R. Goto","doi":"10.1109/MWSYM.2010.5518138","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518138","url":null,"abstract":"This paper describes the SiO2/Al/LiNbO3 structure for the SAW duplexer. Although this structure has large electromechanical coupling coefficient, it also supports unwanted spurious responses. They are categorized into two types of the Rayleigh-mode and transverse-mode. We have developed the novel spurious suppression techniques for these spurious; the SiO2 shape control technique for Rayleigh-mode and the scattered dummy electrode weighting for transverse-mode. We applied the proposed techniques to the balanced-type SAW duplexer for UMTS Band I system. The developed SAW duplexer was installed into a 2.5×2.0×0.5 mm3 package, and exhibited low insertion loss and high out-of-band rejection. The insertion losses in the Tx and Rx bands are 1.3dB and 2.0dB, respectively. The rejections in the Tx and Rx bands are 54 dB and 48 dB, respectively.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124519869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517015
M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell
We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at PDC=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with PDC≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.
{"title":">300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process","authors":"M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell","doi":"10.1109/MWSYM.2010.5517015","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517015","url":null,"abstract":"We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at P<inf>DC</inf>=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with P<inf>DC</inf>≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131923122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517300
A. Amadjikpe, D. Choudhury, G. Ponchak, J. Papapolymerou
Package-integrated highly directive dipole antenna and dipole array with an original feeding technique are presented. The proposed design features excitation of low-cost organic-based substrate elevated directive dipoles with vias. A miniature substrate embedded feed network is provided for direct via interconnection between the antenna and a chip embedded in the same stack-up. The simulated single dipole (10 × 10 × 0.635 mm3) exhibits more than 11 GHz bandwidth (56 to 67+ GHz), 7.83 dBi peak directivity, and 91.7% efficiency. A prototype of an 8-element dipole array (22 × 11 × 0.635 mm3]) is measured and exhibits 8 GHz bandwidth (56.6 to 64.6 GHz), 15.1 dBi peak gain at 61 GHz, and 75 to 83% estimated efficiency.
{"title":"Highly directive package-integrated dipole arrays for low-cost 60-GHz front end modules","authors":"A. Amadjikpe, D. Choudhury, G. Ponchak, J. Papapolymerou","doi":"10.1109/MWSYM.2010.5517300","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517300","url":null,"abstract":"Package-integrated highly directive dipole antenna and dipole array with an original feeding technique are presented. The proposed design features excitation of low-cost organic-based substrate elevated directive dipoles with vias. A miniature substrate embedded feed network is provided for direct via interconnection between the antenna and a chip embedded in the same stack-up. The simulated single dipole (10 × 10 × 0.635 mm3) exhibits more than 11 GHz bandwidth (56 to 67+ GHz), 7.83 dBi peak directivity, and 91.7% efficiency. A prototype of an 8-element dipole array (22 × 11 × 0.635 mm3]) is measured and exhibits 8 GHz bandwidth (56.6 to 64.6 GHz), 15.1 dBi peak gain at 61 GHz, and 75 to 83% estimated efficiency.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132251906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515100
Ramon A. Beltran, F. Raab
At UHF and higher frequencies, the output networks for class-E and -F power amplifiers are generally implemented by transmission-line networks. Typically, quarter-wavelength stubs for the second and third harmonics are placed at selected distances from the drain in order to create the required harmonic impedances inside the RF-power transistor. This paper presents an analogous technique using lumped-elements networks. This technique not only allows the networks to be adjusted for the frequency of operation, but also allows operation at lower frequencies (e.g., VHF and HF) where transmission-line networks are impractical. The new technique is verified by experiment with a second-harmonic class-E power amplifier. This amplifier operates at 900-MHz achieving 10-W output power and 73% drain efficiency with either type of network.
{"title":"Lumped-element output networks for high-efficiency power amplifiers","authors":"Ramon A. Beltran, F. Raab","doi":"10.1109/MWSYM.2010.5515100","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515100","url":null,"abstract":"At UHF and higher frequencies, the output networks for class-E and -F power amplifiers are generally implemented by transmission-line networks. Typically, quarter-wavelength stubs for the second and third harmonics are placed at selected distances from the drain in order to create the required harmonic impedances inside the RF-power transistor. This paper presents an analogous technique using lumped-elements networks. This technique not only allows the networks to be adjusted for the frequency of operation, but also allows operation at lower frequencies (e.g., VHF and HF) where transmission-line networks are impractical. The new technique is verified by experiment with a second-harmonic class-E power amplifier. This amplifier operates at 900-MHz achieving 10-W output power and 73% drain efficiency with either type of network.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130198658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517677
Xun Luo, H. Qian, Jianguo Ma, Kaixue Ma, K. Yeo
A compact ultra-wideband (UWB) bandpass filter with a notched band is proposed using the microstrip/coplanar waveguide (CPW) composition structure and quarter wavelength (λ/4) embedded CPW resonator in this paper. Basic quasi-elliptic function response and multi-mode UWB operation are achieved simultaneously through a λ/4 CPW detached-mode resonator (DMR) and broadside-coupled transitions from microstrip to CPW. To avoid the interferences such as WLAN signals in the UWB passband, two identical λ/4 CPW resonators embedded in the DMR are employed to obtain a narrow notched band. To further improve the selectivity at the lower passband edge, two microstrip short-stubs are introduced. These short-stubs could provide an additional observable transmission zero at 1.86 GHz, which leads to enhanced roll-off characteristic at the lower end of the passband. As such, the proposed filter exhibits a quasi-elliptic function response with 10 dB notched band fractional bandwidth (FBW) smaller than 2.26%. Meanwhile, a competitive attenuation slope with 94.34 dB/GHz in the lower and 67.92 dB/GHz in the upper transition bands can be easily achieved, respectively.
{"title":"A compact UWB bandpass filter with ultra narrow notched band and competitive attenuation slope","authors":"Xun Luo, H. Qian, Jianguo Ma, Kaixue Ma, K. Yeo","doi":"10.1109/MWSYM.2010.5517677","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517677","url":null,"abstract":"A compact ultra-wideband (UWB) bandpass filter with a notched band is proposed using the microstrip/coplanar waveguide (CPW) composition structure and quarter wavelength (λ/4) embedded CPW resonator in this paper. Basic quasi-elliptic function response and multi-mode UWB operation are achieved simultaneously through a λ/4 CPW detached-mode resonator (DMR) and broadside-coupled transitions from microstrip to CPW. To avoid the interferences such as WLAN signals in the UWB passband, two identical λ/4 CPW resonators embedded in the DMR are employed to obtain a narrow notched band. To further improve the selectivity at the lower passband edge, two microstrip short-stubs are introduced. These short-stubs could provide an additional observable transmission zero at 1.86 GHz, which leads to enhanced roll-off characteristic at the lower end of the passband. As such, the proposed filter exhibits a quasi-elliptic function response with 10 dB notched band fractional bandwidth (FBW) smaller than 2.26%. Meanwhile, a competitive attenuation slope with 94.34 dB/GHz in the lower and 67.92 dB/GHz in the upper transition bands can be easily achieved, respectively.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133944819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515981
W. Jemison, T. Wey, A. Paolella
A new optoelectronic oscillator (OEO) topology based on a class E analog fiber optic link is presented. This topology provides a high level of inherent opto-electronic conversion gain in the analog fiber optic link portion of the OEO thus eliminating the need for dedicated post-detector gain. The class E operation also allows for dual loop operation using a single optical detector and can provide good dc-RF efficiency. A proof-of-concept dual loop OEO was designed at 77 MHz and experimental results are reported that validate the proposed topology.
{"title":"A new optoelectronic oscillator topology based on a class E analog fiber optic link","authors":"W. Jemison, T. Wey, A. Paolella","doi":"10.1109/MWSYM.2010.5515981","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515981","url":null,"abstract":"A new optoelectronic oscillator (OEO) topology based on a class E analog fiber optic link is presented. This topology provides a high level of inherent opto-electronic conversion gain in the analog fiber optic link portion of the OEO thus eliminating the need for dedicated post-detector gain. The class E operation also allows for dual loop operation using a single optical detector and can provide good dc-RF efficiency. A proof-of-concept dual loop OEO was designed at 77 MHz and experimental results are reported that validate the proposed topology.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130777416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515613
R. Kravchenko, M. Stadler, E. Leitgeb
A new ultra wideband (UWB) power divider is proposed in this paper. A design of the power divider is based on coupled transmission lines and it has been implemented using low temperature cofired ceramic (LTCC) technology. The power divider provides a function over the whole UWB bandwidth (3.1 – 10.6GHz). In contrary to commonly used coupled line splitters, the design doesn't requires infinite increasing of the even-mode coupled line impedance in order to achieve bandwidth as wider as possible. Optimal values of the even- odd-mode impedances are required for the ultra wideband function that results in optimized coupling coefficient and contributes to smaller size of the component. A test structure of the power divider has been produced and evaluated. Measurements show low insertion loss of less than 1dB with a good matching over the simulated bandwidth.
{"title":"A new UWB coupled transmission line power divider","authors":"R. Kravchenko, M. Stadler, E. Leitgeb","doi":"10.1109/MWSYM.2010.5515613","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515613","url":null,"abstract":"A new ultra wideband (UWB) power divider is proposed in this paper. A design of the power divider is based on coupled transmission lines and it has been implemented using low temperature cofired ceramic (LTCC) technology. The power divider provides a function over the whole UWB bandwidth (3.1 – 10.6GHz). In contrary to commonly used coupled line splitters, the design doesn't requires infinite increasing of the even-mode coupled line impedance in order to achieve bandwidth as wider as possible. Optimal values of the even- odd-mode impedances are required for the ultra wideband function that results in optimized coupling coefficient and contributes to smaller size of the component. A test structure of the power divider has been produced and evaluated. Measurements show low insertion loss of less than 1dB with a good matching over the simulated bandwidth.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131031550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：