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2010 IEEE MTT-S International Microwave Symposium最新文献

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Differential noise figure measurement: A matrix based approach 差分噪声系数测量:基于矩阵的方法
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5514896
M. Robens, R. Wunderlich, S. Heinen
In this paper, a new matrix-based approach for differential noise figure measurement will be presented. Passive components used for embedding a differential device into a single ended test setup are characterized by their noise correlation matrices. Then, signal transfer via the component chain is described by chain matrices. Determining the output referred noise correlation matrix of the device under test this way, a noise figure can be denoted.
本文提出了一种新的基于矩阵的差分噪声系数测量方法。用于将差分装置嵌入单端测试装置的无源元件具有噪声相关矩阵的特征。然后,用链矩阵描述信号在分量链中的传输。通过这种方法确定被测器件的输出参考噪声相关矩阵,就可以表示噪声系数。
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引用次数: 4
A 50 mW 220 GHz power amplifier module 50mw 220 GHz功率放大器模块
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5515248
V. Radisic, K. Leong, X. Mei, S. Sarkozy, W. Yoshida, Po-Hsin Liu, J. Uyeda, R. Lai, W. Deal
In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2∶1 tandem coupler and a 4∶1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.
本文介绍了一种220 GHz固态功率放大器(SSPA)模块。8路片上功率组合用于在217.5至220 GHz带宽上实现≥50 mW的饱和输出功率,与现有技术相比,该频率下的SSPA输出功率显着增加。放大器MMIC采用共面波导(CPW)技术实现,并使用低于50 nm的InP HEMT晶体管。在CPW中实现了2∶1串联耦合器和4∶1 dolphor - chebychev变压器两级功率组合。该模块在207至230 GHz范围内具有≥11.5 dB的小信号增益。在216 ~ 222.5 GHz范围内测得饱和输出功率≥40 mW。
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引用次数: 45
Nonlinear modeling of compound semiconductor HEMTs state of the art 化合物半导体hemt的非线性建模研究进展
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5518285
W. Curtice
This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
本文将回顾微波功率应用中化合物半导体hfet和hemt的建模研究进展。一些简单的物理说明了为什么SPICE模型,或紧凑模型,不能包含设备操作的所有方面。由于模型是不完整的,任何给定的模型都可能被改进,因此,可修改的用户定义的紧凑模型是首选。特别是,Verilog-A编码模型显示出许多令人满意的特性。描述了精确系统和电路仿真的最低建模要求,以及目前的建模技术。
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引用次数: 12
A 90 nm CMOS 14.5 GHz Injection Locked LO generator with digital phase control 带数字相位控制的90 nm CMOS 14.5 GHz注入锁相LO发生器
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5518037
A. Axholt, H. Sjoland
A 14.5 GHz Injection Locked Oscillator (ILO) with digital output phase control has been implemented in a 90 nm CMOS process. It is intended for LO signal generation in integrated phased array transceivers. The chip, measuring 360×530 µm2 including pads, was characterized using on-wafer probing. It has a 1.4 GHz frequency range where full 3600 phase range is achieved with 3rd order subharmonic mixers. The free running phase noise is −105 dBc/Hz at 1 MHz offset. It consumes 9.4 mA from a 1.2 V supply.
14.5 GHz注入锁定振荡器(ILO)与数字输出相位控制已实现在90纳米CMOS工艺。它适用于集成相控阵收发器中的LO信号生成。该芯片的尺寸为360×530µm2(含焊片),采用晶圆上探针进行了表征。它具有1.4 GHz的频率范围,其中使用三阶次谐波混频器可以实现完整的3600相位范围。在偏移1mhz时,自由运行相位噪声为- 105 dBc/Hz。它从1.2 V电源消耗9.4 mA。
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引用次数: 3
GaN technology for microwave and millimeter wave applications 微波和毫米波应用的GaN技术
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5518245
N. Kolias, C. Whelan, T. Kazior, Kurt V. Smith
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
经过多年改进材料和器件的发展,GaN技术现已投入生产,并准备彻底改变当今的许多雷达和通信系统。在本文中,我们概述了GaN的发展,重点是可靠性,可负担性和国防应用。
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引用次数: 17
Fast response Retrodirective Radar 快速响应反向雷达
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517564
N. Buchanan, V. Fusco, P. Sundaralingam
This paper shows the ability of an all analogue Retrodirective Radar, the first of its type, to provide continuous surveillance and near instantaneous target acquisition while automatically beam steering in real time onto a target which is presented to it. Assessment of the phase conjugation unit shows that the Radar is capable of operating either in CW or in pulsed mode. Test results are presented which show that Retrodirective tracking of targets travelling at speeds in excess of 780 m/s is possible. To confirm tracking ability bistatic results of a small near field target are presented, and the capability is also shown to extract the position of the near field target with only very simple calculations, with no DSP circuitry required.
本文展示了一种全模拟逆行雷达的能力,该雷达是同类雷达中的第一种,在提供连续监视和近瞬时目标捕获的同时,自动将波束实时转向呈现给它的目标。相位共轭单元的评估表明,该雷达既能工作在连续波模式下,也能工作在脉冲模式下。试验结果表明,对速度超过780米/秒的目标进行反向跟踪是可行的。为了确认跟踪能力,给出了一个小的近场目标的双基地结果,并且还显示了仅通过非常简单的计算提取近场目标位置的能力,不需要DSP电路。
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引用次数: 8
Response corrected tuning space mapping for yield estimation and design centering 响应校正调谐空间映射,用于产量估计和设计定心
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5515488
Q. Cheng, J. Bandler, S. Koziel
We enhance a tuning space mapping algorithm through a response correction. We demonstrate that the response corrected tuning model can serve as a high-performance surrogate for fast yield estimation and design centering. We illustrate yield analysis of a second-order tapped-line microstrip filter using our model. We perform yield-driven design on a double-ring filter example and verify the design with the EM model.
我们通过响应校正改进了一种调谐空间映射算法。我们证明了响应校正调谐模型可以作为快速良率估计和设计中心的高性能替代品。我们用我们的模型说明了二阶抽头微带滤波器的良率分析。我们对一个双环滤波器实例进行了产量驱动设计,并用EM模型验证了设计。
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引用次数: 8
10-Gbit/s QPSK modulator and demodulator for a 120-GHz-band wireless link 用于120 ghz频段无线链路的10gbit /s QPSK调制器和解调器
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5514996
Hiroyuki Takahashi, T. Kosugi, A. Hirata, K. Murata, N. Kukutsu
This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) modulator and demodulator fabricated on microwave monolithic integrated circuits (MMICs) for a 10-Gbit/s wireless link. The MMICs were fabricated using 0.1-µm-gate InP HEMTs and coplanar waveguides. The direct-conversion modulator consists of hybrid couplers, gain-control amplifiers, and combiners. The delay demodulator has a 200-ps delay line, distribution amplifiers, a voltage-controlled phase shifter, and detectors. The modulator and demodulator MMICs were mounted in WR-8 waveguide modules to evaluate the characteristics of 10-Gbit/s transmission. The bit error rate (BER) for 10-Gbit/s pseudorandom binary sequence (PRBS) 27–1 data was smaller than 10−10.
本文介绍了一种用于10gbit /s无线链路的120 ghz波段正交相移键控(QPSK)调制器和解调器。mmic采用0.1µm栅极InP hemt和共面波导制备。直接转换调制器由混合耦合器、增益控制放大器和合成器组成。延迟解调器有200-ps延迟线、分布放大器、压控移相器和检测器。将调制器和解调器mmic安装在WR-8波导模块中,以评估10gbit /s传输特性。10gbit /s伪随机二进制序列(PRBS) 27-1数据误码率小于10−10。
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引用次数: 7
Whispering-gallery mode based photonic RF receiver 基于低语通道模式的光子射频接收机
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5516839
V. Ilchenko, J. Byrd, A. Savchenkov, P. Koonath, A. Matsko, D. Seidel, L. Maleki
We describe our recent achievements in the integration of narrowband photonic RF receivers and discuss their ultimate performance parameters. The best sensitivity and the spurious free dynamic range achieved in the current built of our coherent receiver approaches −145 dBm/Hz and 90 dB/Hz2/3 respectively. We plan to improve these values to −164 dBm/Hz and 105 dB/Hz2/3 in the next generation receivers, while keeping the 13.5×8.5×4.7 mm form factor intact.
本文介绍了窄带光子射频接收器集成方面的最新成果,并讨论了它们的最终性能参数。在当前构建的相干接收机方法中,最佳灵敏度和无杂散动态范围分别为- 145 dBm/Hz和90 dB/Hz2/3。我们计划在下一代接收机中将这些值提高到−164 dBm/Hz和105 dB/Hz2/3,同时保持13.5×8.5×4.7 mm的外形系数不变。
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引用次数: 5
A fully integrated CMOS RF power amplifier with tunable matching network for GSM/EDGE dual-mode application 一款完全集成的CMOS射频功率放大器,具有可调谐匹配网络,适用于GSM/EDGE双模应用
Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517920
Hyungwook Kim, Youngchang Yoon, O. Lee, K. An, Dong Ho Lee, Woonyun Kim, Chang-Ho Lee, J. Laskar
A fully integrated power amplifier operating at switching and linear mode is implemented using 0.18-µm CMOS technology. To maximize performance for both operation modes, the fundamental load impedances are optimized with a variable capacitor for GSM and EDGE application. For GSM application, 32 dBm of the output power with 45 % of the drain efficiency is achieved at 1.76 GHz. With EDGE modulation signal at 1.76 GHz, error vector magnitude (EVM) has an RMS value of less than 5 % up to 27.5 dBm of the output power, and 28.1 % of modulated PAE is achieved at this power. The output spectrum is confined within the inside of mask up to 27.5 dBm of the output power.
采用0.18µm CMOS技术实现了工作在开关和线性模式下的全集成功率放大器。为了最大限度地提高两种工作模式的性能,基本负载阻抗通过GSM和EDGE应用的可变电容进行了优化。在GSM应用中,在1.76 GHz下可以实现32 dBm的输出功率和45%的漏极效率。在1.76 GHz的EDGE调制信号下,误差矢量幅值(EVM)的均方根值在输出功率的27.5 dBm以内小于5%,在此功率下可实现28.1%的调制PAE。输出频谱被限制在掩模内部,最大输出功率为27.5 dBm。
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引用次数: 8
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2010 IEEE MTT-S International Microwave Symposium
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