Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517797
M. Tsuchiya, T. Shiozawa
A novel experimental approach is proposed to characterize the dispersion properties of radio frequency (RF) waves in metamaterial structures. The approach is based on wave analyses in the space domain and is provided by RF wave visualization through the live electro-optic imaging scheme. It was successfully demonstrated to visualize forward/backward RF waves in composite right/left-handed transmission lines. The RF wave imagery is shown to be useful for determining right/left-handed frequency ranges as well as evaluating their propagation constants. The derived dispersion diagrams were compared with those obtained from unwrapped S21 phase data.
{"title":"Dispersion characterization of CRLH transmission lines by electro-optic visions of forward/backward waves","authors":"M. Tsuchiya, T. Shiozawa","doi":"10.1109/MWSYM.2010.5517797","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517797","url":null,"abstract":"A novel experimental approach is proposed to characterize the dispersion properties of radio frequency (RF) waves in metamaterial structures. The approach is based on wave analyses in the space domain and is provided by RF wave visualization through the live electro-optic imaging scheme. It was successfully demonstrated to visualize forward/backward RF waves in composite right/left-handed transmission lines. The RF wave imagery is shown to be useful for determining right/left-handed frequency ranges as well as evaluating their propagation constants. The derived dispersion diagrams were compared with those obtained from unwrapped S21 phase data.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131078656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517988
T. Brazil
New modes of high frequency circuit operation may involve severe nonlinearity and extensive use of digital control or mixed-signal waveforms together with microwave carriers which in combination present significant challenges for simulation. Much progress has been made in simulation techniques in recent years and this is reviewed briefly, indicating a few limitations and still outstanding challenges. Some features of an in-house transient simulator are outlined, which has proven robust and accurate even for the most challenging applications.
{"title":"Techniques for nonlinear high-frequency circuit-level simulation","authors":"T. Brazil","doi":"10.1109/MWSYM.2010.5517988","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517988","url":null,"abstract":"New modes of high frequency circuit operation may involve severe nonlinearity and extensive use of digital control or mixed-signal waveforms together with microwave carriers which in combination present significant challenges for simulation. Much progress has been made in simulation techniques in recent years and this is reviewed briefly, indicating a few limitations and still outstanding challenges. Some features of an in-house transient simulator are outlined, which has proven robust and accurate even for the most challenging applications.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131169058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517856
Kichul Kim, T. M. Wallis, P. Rice, C. Chiang, A. Imtiaz, P. Kabos, D. Filipović
Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
{"title":"Modeling and metrology of metallic nanowires with application to microwave interconnects","authors":"Kichul Kim, T. M. Wallis, P. Rice, C. Chiang, A. Imtiaz, P. Kabos, D. Filipović","doi":"10.1109/MWSYM.2010.5517856","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517856","url":null,"abstract":"Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131207556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517724
M. Khafaji, H. Gustat, C. Scheytt
This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by adding a current buffer stage, the effect of one of the major drawbacks in this architecture, the impedance variation in every stage, is reduced. To verify the method, a fully binary 6bit 20.5Gsps DAC with 1W power dissipation and measured SFDR higher than 28.2dBc up to 6.2GHz input bandwidth was fabricated. The DAC produces 1Vpp differential output, and less than 60ps full scale rise time.
{"title":"A 6 bit linear binary RF DAC in 0.25µm SiGe BiCMOS for communication systems","authors":"M. Khafaji, H. Gustat, C. Scheytt","doi":"10.1109/MWSYM.2010.5517724","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517724","url":null,"abstract":"This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by adding a current buffer stage, the effect of one of the major drawbacks in this architecture, the impedance variation in every stage, is reduced. To verify the method, a fully binary 6bit 20.5Gsps DAC with 1W power dissipation and measured SFDR higher than 28.2dBc up to 6.2GHz input bandwidth was fabricated. The DAC produces 1Vpp differential output, and less than 60ps full scale rise time.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131037529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517776
F. Poprawa, Abdellatif Zanati, A. Ziroff, F. Ellinger
A microstrip line-to-circular waveguide transition is described which operates at a nominal design frequency of 77 GHz. In order to improve the transmission characteristics, an additional periodically structured shield is used. The transition is capable of exciting a dielectric rod antenna, thus enabling the realization of radar modules on a PCB substrate with a dielectric rod antenna interface.
{"title":"Waveguide transition to feed a fully PCB integrated dielectric rod antenna","authors":"F. Poprawa, Abdellatif Zanati, A. Ziroff, F. Ellinger","doi":"10.1109/MWSYM.2010.5517776","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517776","url":null,"abstract":"A microstrip line-to-circular waveguide transition is described which operates at a nominal design frequency of 77 GHz. In order to improve the transmission characteristics, an additional periodically structured shield is used. The transition is capable of exciting a dielectric rod antenna, thus enabling the realization of radar modules on a PCB substrate with a dielectric rod antenna interface.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132847793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5516823
W. Khan, S. Bhattacharya, S. Horst, J. Cressler, J. Papapolymerou
In this paper, for the first time, a reflection type K-band oscillator, on low-cost Liquid Crystal Polymer (LCP), organic substrate, is presented. The oscillation frequency is determined by a λ/2 microstrip resonator coupled to a microstrip line. The measured phase noise and power output of the oscillator are found to be −108 dBc/Hz at 1 MHz offset and −6 dBm respectively, for an oscillating frequency of 25.6 GHz.
{"title":"Low phase noise K-Band oscillator on organic Liquid Crystal Polymer (LCP) substrate","authors":"W. Khan, S. Bhattacharya, S. Horst, J. Cressler, J. Papapolymerou","doi":"10.1109/MWSYM.2010.5516823","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5516823","url":null,"abstract":"In this paper, for the first time, a reflection type K-band oscillator, on low-cost Liquid Crystal Polymer (LCP), organic substrate, is presented. The oscillation frequency is determined by a λ/2 microstrip resonator coupled to a microstrip line. The measured phase noise and power output of the oscillator are found to be −108 dBc/Hz at 1 MHz offset and −6 dBm respectively, for an oscillating frequency of 25.6 GHz.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133439731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515124
T. Djerafi, J. Gauthier, K. Wu
A new substrate integrated waveguide (SIW) coupler in the form of a cruciform structure is proposed and developed in this work. This coupler is composed of four arms waveguide section connected by a central junction. The central portion is partially etched to act as an impedance transformer and mirror. This coupler could be used for millimetre-wave and sub-millimetre wave applications without insuperable tolerance problem. A 3dB coupler design procedure is validated by electromagnetic -simulations (HFSS) and prototype experiments. Measured results on the basis of the realized prototypes agree well with theoretical predictions and simulated results. This coupler is demonstrated to have a 20% relative bandwidth with 20dB of isolation and return loss.
{"title":"Quasi-optical cruciform substrate integrated waveguide (SIW) coupler for millimeter-wave systems","authors":"T. Djerafi, J. Gauthier, K. Wu","doi":"10.1109/MWSYM.2010.5515124","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515124","url":null,"abstract":"A new substrate integrated waveguide (SIW) coupler in the form of a cruciform structure is proposed and developed in this work. This coupler is composed of four arms waveguide section connected by a central junction. The central portion is partially etched to act as an impedance transformer and mirror. This coupler could be used for millimetre-wave and sub-millimetre wave applications without insuperable tolerance problem. A 3dB coupler design procedure is validated by electromagnetic -simulations (HFSS) and prototype experiments. Measured results on the basis of the realized prototypes agree well with theoretical predictions and simulated results. This coupler is demonstrated to have a 20% relative bandwidth with 20dB of isolation and return loss.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132740349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518137
C. Ruf, S. Gross
Digital microwave radiometers replace as much of the conventional analog circuitry in a radiometer as possible with an analog-to-digital converter followed by a high speed Digital Signal Processing (DSP) stage. Digital technology adds capabilities to a radiometer that would otherwise be much more difficult (and often cost prohibitive) to include. The quality of each of the performance enhancements enabled by digital radiometry (e.g. spectral resolution, RFI detectability threshold, and full Stokes polarization purity) is dependent on certain aspects of the digital technology (e.g. number of bits of digitization, digitization oversampling rate, length of transverse digital filters, number of internal bits utilized by the DSP algorithm, and core memory and logic block sizes in the DSP chip). These factors are examined and current and projected radiometer performance capabilities estimated given the current and projected state of the art in DSP technology.
{"title":"Digital radiometers for earth science","authors":"C. Ruf, S. Gross","doi":"10.1109/MWSYM.2010.5518137","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518137","url":null,"abstract":"Digital microwave radiometers replace as much of the conventional analog circuitry in a radiometer as possible with an analog-to-digital converter followed by a high speed Digital Signal Processing (DSP) stage. Digital technology adds capabilities to a radiometer that would otherwise be much more difficult (and often cost prohibitive) to include. The quality of each of the performance enhancements enabled by digital radiometry (e.g. spectral resolution, RFI detectability threshold, and full Stokes polarization purity) is dependent on certain aspects of the digital technology (e.g. number of bits of digitization, digitization oversampling rate, length of transverse digital filters, number of internal bits utilized by the DSP algorithm, and core memory and logic block sizes in the DSP chip). These factors are examined and current and projected radiometer performance capabilities estimated given the current and projected state of the art in DSP technology.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133255597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515893
H. Lobato-Morales, A. Corona‐Chavez, D. Murthy, Juan Martinez-Brito, L. G. Guerrero-Ojeda
A planar Epsilon-Near-Zero (ENZ) structure implemented on substrate integrated waveguide technology is used for the characterization of material dielectric permittivity. The proposed structure has very high sensitivity which yields more accurate results when compared to other techniques, such as perturbation of conventional cavities. This prototype presents a low profile, low cost, ease of fabrication and ease of integration, which add important characteristics for portable material analysis systems. Measurements are in good agreement with standard values.
{"title":"Experimental dielectric sensing of materials using Epsilon-Near-Zero tunnel in SIW technology","authors":"H. Lobato-Morales, A. Corona‐Chavez, D. Murthy, Juan Martinez-Brito, L. G. Guerrero-Ojeda","doi":"10.1109/MWSYM.2010.5515893","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515893","url":null,"abstract":"A planar Epsilon-Near-Zero (ENZ) structure implemented on substrate integrated waveguide technology is used for the characterization of material dielectric permittivity. The proposed structure has very high sensitivity which yields more accurate results when compared to other techniques, such as perturbation of conventional cavities. This prototype presents a low profile, low cost, ease of fabrication and ease of integration, which add important characteristics for portable material analysis systems. Measurements are in good agreement with standard values.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127807674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515741
S. Koziel
A new and simple surrogate modeling technique for microwave devices is presented. Our method exploits a recently introduced shape-preserving response prediction procedure that allows us to estimate the response (e.g., S-parameters over certain frequency range) of the computationally expensive microwave structure by examining the response of the computationally cheap (e.g., circuit equivalent) model of the structure. It is demonstrated that the proposed approach offers good modeling accuracy which is better than the accuracy provided by the space mapping approach, even when a very tight limit on the number of base designs used to set up a surrogate model is imposed.
{"title":"Shape-preserving response prediction for microwave circuit modeling","authors":"S. Koziel","doi":"10.1109/MWSYM.2010.5515741","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515741","url":null,"abstract":"A new and simple surrogate modeling technique for microwave devices is presented. Our method exploits a recently introduced shape-preserving response prediction procedure that allows us to estimate the response (e.g., S-parameters over certain frequency range) of the computationally expensive microwave structure by examining the response of the computationally cheap (e.g., circuit equivalent) model of the structure. It is demonstrated that the proposed approach offers good modeling accuracy which is better than the accuracy provided by the space mapping approach, even when a very tight limit on the number of base designs used to set up a surrogate model is imposed.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131866071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：