Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517023
Peng Liu, P. Upadhyaya, Jaeyoung Jung, Tang-Nian Luo, Y. Chen, D. Heo
This paper presents a novel low-voltage low phase noise CMOS LC Voltage Controlled Oscillator (VCO) implemented in the TSMC 0.18-µm CMOS process. By using capacitive feedback, dynamic switching is achieved for the current source. Detailed theoretical analysis is conducted to show how tail current switching helps reduce supply voltage and improve phase noise performance. For the proposed VCO, with 1.2 V supply voltage and 2.5 mA DC current consumption, phase noise of −121.3 dBc/Hz at 1MHz offset from 5.4GHz oscillation frequency is achieved, and the measured FOM is −191.1dBc/Hz.
{"title":"Low phase noise load independent switched LC VCO","authors":"Peng Liu, P. Upadhyaya, Jaeyoung Jung, Tang-Nian Luo, Y. Chen, D. Heo","doi":"10.1109/MWSYM.2010.5517023","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517023","url":null,"abstract":"This paper presents a novel low-voltage low phase noise CMOS LC Voltage Controlled Oscillator (VCO) implemented in the TSMC 0.18-µm CMOS process. By using capacitive feedback, dynamic switching is achieved for the current source. Detailed theoretical analysis is conducted to show how tail current switching helps reduce supply voltage and improve phase noise performance. For the proposed VCO, with 1.2 V supply voltage and 2.5 mA DC current consumption, phase noise of −121.3 dBc/Hz at 1MHz offset from 5.4GHz oscillation frequency is achieved, and the measured FOM is −191.1dBc/Hz.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123690308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5514759
A. Almuhaisen, P. Wright, J. Lees, P. Tasker, S. Cripps, J. Benedikt
This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs). The proposed concept utilizes active harmonic injection to achieve the appropriate waveform shaping of the voltage/current waveforms necessary to deliver simultaneously both high power and high efficiency operation. The new PA structure thus consists of two parallel PAs where the main PA generates fundamental power and an auxiliary PA injects a harmonic signal at the output of the main PA to perform waveform shaping. An active harmonic injection PA circuit designed around the 10 W GaN transistor is demonstrated, along with the basic mathematical analysis and computer simulation of this new mode of operation. The measured performance of the PA demonstrator realized at 0.9 GHz provided a drain efficiency of 74.3% at P1dB, validating the concept and its potential.
{"title":"Novel wide band high-efficiency active harmonic injection power amplifier concept","authors":"A. Almuhaisen, P. Wright, J. Lees, P. Tasker, S. Cripps, J. Benedikt","doi":"10.1109/MWSYM.2010.5514759","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5514759","url":null,"abstract":"This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs). The proposed concept utilizes active harmonic injection to achieve the appropriate waveform shaping of the voltage/current waveforms necessary to deliver simultaneously both high power and high efficiency operation. The new PA structure thus consists of two parallel PAs where the main PA generates fundamental power and an auxiliary PA injects a harmonic signal at the output of the main PA to perform waveform shaping. An active harmonic injection PA circuit designed around the 10 W GaN transistor is demonstrated, along with the basic mathematical analysis and computer simulation of this new mode of operation. The measured performance of the PA demonstrator realized at 0.9 GHz provided a drain efficiency of 74.3% at P1dB, validating the concept and its potential.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125282206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517741
J. Mateu, A. Padilla, C. Collado, M. Martinez-Mendoza, E. Rocas, C. Ernst, J. O'Callaghan
This paper outlines the synthesis procedure for obtaining the folded coupling matrix of lossy filters of 4th order with uniform Q distribution. The method is applied to Butterworth, Chebyshev and Chebyshev with a single pair of symmetrical transmission zeros responses. Closed-form expressions to relate a prescribed insertion loss and filter bandwidth with the required resonator quality factor for an infinite Q flatness filter responses have been obtained. Experimental results on a Chebyschev microstrip filter coincide with the theoretical predictions.
{"title":"Synthesis of 4th order lossy filters with uniform Q distribution","authors":"J. Mateu, A. Padilla, C. Collado, M. Martinez-Mendoza, E. Rocas, C. Ernst, J. O'Callaghan","doi":"10.1109/MWSYM.2010.5517741","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517741","url":null,"abstract":"This paper outlines the synthesis procedure for obtaining the folded coupling matrix of lossy filters of 4th order with uniform Q distribution. The method is applied to Butterworth, Chebyshev and Chebyshev with a single pair of symmetrical transmission zeros responses. Closed-form expressions to relate a prescribed insertion loss and filter bandwidth with the required resonator quality factor for an infinite Q flatness filter responses have been obtained. Experimental results on a Chebyschev microstrip filter coincide with the theoretical predictions.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125538801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515941
Q. Zhang, J. Bandler, S. Koziel, H. Kabir, Lei Zhang
Artificial neural network (ANN) and space mapping are recognized as two major recent advances in microwave CAD. ANNs can be trained to learn EM and physics behaviour from component data, and trained ANNs can be used in high-level circuit design. Space mapping has proved to be a breakthrough in engineering optimization allowing expensive EM optimization to be performed effectively with the help of “coarse” or surrogate models. Recent advance also led to neuro-space mapping, combining the advantages of ANN and space mapping for efficient modelling of microwave components. This paper presents an overview of the state-of-art of microwave modelling and design with ANN, space mapping and neuro-space mapping.
{"title":"ANN and space mapping for microwave modelling and optimization","authors":"Q. Zhang, J. Bandler, S. Koziel, H. Kabir, Lei Zhang","doi":"10.1109/MWSYM.2010.5515941","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515941","url":null,"abstract":"Artificial neural network (ANN) and space mapping are recognized as two major recent advances in microwave CAD. ANNs can be trained to learn EM and physics behaviour from component data, and trained ANNs can be used in high-level circuit design. Space mapping has proved to be a breakthrough in engineering optimization allowing expensive EM optimization to be performed effectively with the help of “coarse” or surrogate models. Recent advance also led to neuro-space mapping, combining the advantages of ANN and space mapping for efficient modelling of microwave components. This paper presents an overview of the state-of-art of microwave modelling and design with ANN, space mapping and neuro-space mapping.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126761193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517216
Y.-T. Chiu, Yo‐Sheng Lin, Jin-Fa Chang
A 20–29 GHz wideband CMOS low-noise amplifier (LNA) with flat and low noise figure (NF), flat and high gain (S21), and excellent phase linearity property (group-delay-variation is only ±22.6 ps across the whole band) is demonstrated. To achieve flat and low NF, the size, layout and bias of the input transistor were first optimized for minimum NF, and then the inductance of the input inductors was tuned to obtain a slightly under-damped (flat) NF frequency response. In addition, to achieve flat and high S21 and small group-delay-variation, the inductive-peaking technique was adopted in the current-reused stage for bandwidth enhancement. The LNA consumed 18.85 mW power and achieved flat and low NF of 3.85±0.25 dB, and flat and high S21 of 18.1±1.9 dB over the 20–29 GHz band of interest. These are the best NF and S21 performances ever reported for a 21.65–26.65 GHz or a 22–29 GHz wideband CMOS LNA.
{"title":"A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain","authors":"Y.-T. Chiu, Yo‐Sheng Lin, Jin-Fa Chang","doi":"10.1109/MWSYM.2010.5517216","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517216","url":null,"abstract":"A 20–29 GHz wideband CMOS low-noise amplifier (LNA) with flat and low noise figure (NF), flat and high gain (S21), and excellent phase linearity property (group-delay-variation is only ±22.6 ps across the whole band) is demonstrated. To achieve flat and low NF, the size, layout and bias of the input transistor were first optimized for minimum NF, and then the inductance of the input inductors was tuned to obtain a slightly under-damped (flat) NF frequency response. In addition, to achieve flat and high S21 and small group-delay-variation, the inductive-peaking technique was adopted in the current-reused stage for bandwidth enhancement. The LNA consumed 18.85 mW power and achieved flat and low NF of 3.85±0.25 dB, and flat and high S21 of 18.1±1.9 dB over the 20–29 GHz band of interest. These are the best NF and S21 performances ever reported for a 21.65–26.65 GHz or a 22–29 GHz wideband CMOS LNA.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115551080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517249
R. Jin, Cheng Chen, S. Halder, W. Curtice, J. Hwang
Using a novel sub-nanosecond pulse current-voltage measurement technique, InGaP/GaAs heterojunction bipolar transistors were shown to survive strong impact ionization and to have a much larger safe operating area than previously measured or predicted. As the result, an empirical model for impact ionization was constructed and added to a commercially available HBT model. The modified model can predict the HBT characteristics across the enlarged safe operating area, including strong avalanche breakdown and flyback. The modified model can be used to simulate not only the ruggedness of high-power amplifiers, but also the performance of ultra-wideband pulse generators.
{"title":"Sub-nanosecond pulse characteristics of InGaP/GaAs HBTs","authors":"R. Jin, Cheng Chen, S. Halder, W. Curtice, J. Hwang","doi":"10.1109/MWSYM.2010.5517249","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517249","url":null,"abstract":"Using a novel sub-nanosecond pulse current-voltage measurement technique, InGaP/GaAs heterojunction bipolar transistors were shown to survive strong impact ionization and to have a much larger safe operating area than previously measured or predicted. As the result, an empirical model for impact ionization was constructed and added to a commercially available HBT model. The modified model can predict the HBT characteristics across the enlarged safe operating area, including strong avalanche breakdown and flyback. The modified model can be used to simulate not only the ruggedness of high-power amplifiers, but also the performance of ultra-wideband pulse generators.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116556181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517504
H. Ezzeddine, S. Bila, S. Verdeyme, F. Seyfert, D. Pacaud
In this work, two topologies for realizing compact microwave diplexers in dual-mode cavities are presented. The first topology is a classical one, where the common port is coupled to two resonators in separate paths. The second topology is original because of the excitation of a single resonator by the common port. The interest of the second topology is demonstrated on dual-mode cavity diplexers by eliminating spurious cross-polarized modes which appear when using a classical topology. The proposed topologies have been validated by the design of coupled dual-mode cavity diplexers for satellite applications.
{"title":"Coupling topologies for realizing compact microwave diplexers with dual-mode cavities","authors":"H. Ezzeddine, S. Bila, S. Verdeyme, F. Seyfert, D. Pacaud","doi":"10.1109/MWSYM.2010.5517504","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517504","url":null,"abstract":"In this work, two topologies for realizing compact microwave diplexers in dual-mode cavities are presented. The first topology is a classical one, where the common port is coupled to two resonators in separate paths. The second topology is original because of the excitation of a single resonator by the common port. The interest of the second topology is demonstrated on dual-mode cavity diplexers by eliminating spurious cross-polarized modes which appear when using a classical topology. The proposed topologies have been validated by the design of coupled dual-mode cavity diplexers for satellite applications.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116577300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518157
K. Narendra, A. Mediano, L. Anand, Chacko Prakash
Class E amplifier offers high efficiency approaching 100% for ideal case. This paper describes a topology to reduce second harmonic in a broadband parallel circuit class E power amplifier (PA). Drain efficiency > 60% and second harmonic < 40dBm across wide bandwidth (134–174MHz) is shown at power operation more than 5.5W.
{"title":"Second harmonic reduction in broadband HF/VHF/UHF class E RF power amplifiers","authors":"K. Narendra, A. Mediano, L. Anand, Chacko Prakash","doi":"10.1109/MWSYM.2010.5518157","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518157","url":null,"abstract":"Class E amplifier offers high efficiency approaching 100% for ideal case. This paper describes a topology to reduce second harmonic in a broadband parallel circuit class E power amplifier (PA). Drain efficiency > 60% and second harmonic < 40dBm across wide bandwidth (134–174MHz) is shown at power operation more than 5.5W.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114164549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518210
R. Suga, H. Nakano, Y. Hirachi, J. Hirokawa, M. Ando
This paper proposes a cost-effective antenna-package suitable for the mobile terminal of the wireless file-transfer system. The antenna-package has the end-fire radiation from the open-end post-wall waveguide built in the side of the package. The antenna-package with a 60-GHz CMOS chip is mounted on the edge of a printed-circuit board by BGA technique. The antenna only was fabricated. The antenna has the size of 4.8 × 6.4 × 1.0 mm3. The beamwidth of 120 degrees (E-plane), 72 degrees (H-plane), and 2.2 dBi gain were measured at 60 GHz. The radiation efficiency of the antenna was calculated to be 88 % at 60 GHz. Moreover, the antenna-package with two antennas for the transmitter and the receiver was designed. Its size was 14.4 × 14.4 × 1.0 mm3. The package is under the fabrication.
{"title":"Cost-effective 60-GHz antenna-package with end-fire radiation from open-ended post-wall waveguide for wireless file-transfer system","authors":"R. Suga, H. Nakano, Y. Hirachi, J. Hirokawa, M. Ando","doi":"10.1109/MWSYM.2010.5518210","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518210","url":null,"abstract":"This paper proposes a cost-effective antenna-package suitable for the mobile terminal of the wireless file-transfer system. The antenna-package has the end-fire radiation from the open-end post-wall waveguide built in the side of the package. The antenna-package with a 60-GHz CMOS chip is mounted on the edge of a printed-circuit board by BGA technique. The antenna only was fabricated. The antenna has the size of 4.8 × 6.4 × 1.0 mm3. The beamwidth of 120 degrees (E-plane), 72 degrees (H-plane), and 2.2 dBi gain were measured at 60 GHz. The radiation efficiency of the antenna was calculated to be 88 % at 60 GHz. Moreover, the antenna-package with two antennas for the transmitter and the receiver was designed. Its size was 14.4 × 14.4 × 1.0 mm3. The package is under the fabrication.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121988453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517541
Liang Zhou, Zhe Wang, W. Yin, J. Mao
In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).
{"title":"Transient Thermal Analysis of active device (FETs) for high-power applications","authors":"Liang Zhou, Zhe Wang, W. Yin, J. Mao","doi":"10.1109/MWSYM.2010.5517541","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517541","url":null,"abstract":"In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129503996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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