Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5516079
N. Zahirović, R. Mansour, Ming Yu
A variable MEMS capacitor with piezoresistive feedback is presented. The capacitor is fabricated in a commercial 0.35 µm CMOS process with MEMS post-processing. The work presented demonstrates a piezoresistive sensing scheme capable of controlling hysteresis effects in a CMOS-MEMS variable capacitor. Potential applications of the sensing scheme include closed-loop control of variable capacitors and detection of dielectic charging.
提出了一种具有压阻反馈的可变MEMS电容。该电容器采用商用0.35 μ m CMOS工艺制造，并经过MEMS后处理。本文提出了一种压阻式传感方案，能够控制CMOS-MEMS可变电容中的磁滞效应。该传感方案的潜在应用包括可变电容的闭环控制和介质充电的检测。
{"title":"A MEMS variable capacitor with piezoresistive position sensing fabricated in a standard 0.35 µm CMOS process","authors":"N. Zahirović, R. Mansour, Ming Yu","doi":"10.1109/MWSYM.2010.5516079","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5516079","url":null,"abstract":"A variable MEMS capacitor with piezoresistive feedback is presented. The capacitor is fabricated in a commercial 0.35 µm CMOS process with MEMS post-processing. The work presented demonstrates a piezoresistive sensing scheme capable of controlling hysteresis effects in a CMOS-MEMS variable capacitor. Potential applications of the sensing scheme include closed-loop control of variable capacitors and detection of dielectic charging.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125977366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517580
T. Reck, Lihan Chen, Chunhu Zhang, C. Groppi, Haiyong Xu, A. Arsenovic, N. S. Barker, A. Lichtenberger, R. Weikle
A micromachined on-wafer probe is designed, fabricated and measured at W-Band as a proof of concept for probes operating at sub-millimeter wavelengths. A fabrication process is developed to create devices that combine a waveguide probe with a GSG probe tip on a 15 µm silicon substrate. This device is housed in a metal machined waveguide block that provides mechanical support for the probe and connection to a waveguide flange. Load-cell measurements show a DC contact resistance below 0.07 Ω with a force of 1 mN. A two-tier TRL calibration characterizes the operation of the electromagnetic design and an insertion loss of 1.75 dB is achieved; this is comparable with commercial probes operating in the same band.
{"title":"Micromachined on-wafer probes","authors":"T. Reck, Lihan Chen, Chunhu Zhang, C. Groppi, Haiyong Xu, A. Arsenovic, N. S. Barker, A. Lichtenberger, R. Weikle","doi":"10.1109/MWSYM.2010.5517580","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517580","url":null,"abstract":"A micromachined on-wafer probe is designed, fabricated and measured at W-Band as a proof of concept for probes operating at sub-millimeter wavelengths. A fabrication process is developed to create devices that combine a waveguide probe with a GSG probe tip on a 15 µm silicon substrate. This device is housed in a metal machined waveguide block that provides mechanical support for the probe and connection to a waveguide flange. Load-cell measurements show a DC contact resistance below 0.07 Ω with a force of 1 mN. A two-tier TRL calibration characterizes the operation of the electromagnetic design and an insertion loss of 1.75 dB is achieved; this is comparable with commercial probes operating in the same band.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128538272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515953
L. Cabrìa, J. A. García, T. Aballo, Z. Popovic
In this paper, polar transmitter concepts for high-efficiency linear power amplifiers are applied to phase conjugating arrays, with the goal of improving spectral efficiency and linearity in full-duplex communications. The nearly linear control of the drain biasing voltage over the conversion characteristic of an active gate mixer is used to overcome the highly nonlinear AM-to-AM conversion characteristic between the local oscillator (LO) and the response signal ports. A 4-element linear patch array at 980 MHz is implemented and characterized as a polar phase conjugator for CDMA-modulated signals.
{"title":"Polar phase-conjugating active arrays for spectrally-efficient linear wireless links","authors":"L. Cabrìa, J. A. García, T. Aballo, Z. Popovic","doi":"10.1109/MWSYM.2010.5515953","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515953","url":null,"abstract":"In this paper, polar transmitter concepts for high-efficiency linear power amplifiers are applied to phase conjugating arrays, with the goal of improving spectral efficiency and linearity in full-duplex communications. The nearly linear control of the drain biasing voltage over the conversion characteristic of an active gate mixer is used to overcome the highly nonlinear AM-to-AM conversion characteristic between the local oscillator (LO) and the response signal ports. A 4-element linear patch array at 980 MHz is implemented and characterized as a polar phase conjugator for CDMA-modulated signals.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128587829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517273
Cong Wang, Won Sang Lee, Nam-Young Kim
A novel fabrication process has been demonstrated to create cost-effective, high-yield, and high-quality integrated passive devices (IPDs) on GaAs substrate. Various materials and processing approaches to thin film resistors (TFRs), spiral inductors, and metal-insulator-metal (MIM) capacitors have been evaluated in terms of cost, yield, and device performance. To further reduce the total cost, SU-8 photo resist (PR) is firstly presented as a novel material for forming the final passivation layer. A digital cellular system (DCS) power divider is realized by this novel process and shows very good RF performances with the high yield and low cost in spite of its small chip size.
{"title":"Cost-effective high-yield manufacturing process of integrated passive devices (IPDs) for RF and microwave application","authors":"Cong Wang, Won Sang Lee, Nam-Young Kim","doi":"10.1109/MWSYM.2010.5517273","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517273","url":null,"abstract":"A novel fabrication process has been demonstrated to create cost-effective, high-yield, and high-quality integrated passive devices (IPDs) on GaAs substrate. Various materials and processing approaches to thin film resistors (TFRs), spiral inductors, and metal-insulator-metal (MIM) capacitors have been evaluated in terms of cost, yield, and device performance. To further reduce the total cost, SU-8 photo resist (PR) is firstly presented as a novel material for forming the final passivation layer. A digital cellular system (DCS) power divider is realized by this novel process and shows very good RF performances with the high yield and low cost in spite of its small chip size.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515945
B. Cetinoneri, Y. Atesal, R. Kroeger, G. Tepper, J. Losee, Charles W Hicks, Marc Rasmussen, Gabriel M. Rebeiz
This paper presents a contactless, microwave-based gamma ray detector for detecting low-energy gamma ray photons. The detection is based on a microwave cavity perturbation method, and uses a reflection-type cavity resonator with a detector-grade CZT crystal. The reflected power from the cavity is measured and this monitors the changes in the photoconductivity of the CZT crystal in the presence of a gamma-ray. A gamma ray detection sensitivity of < 100 keV is achieved at room temperature. The proposed system can be used in homeland security or radioactive material characterization applications.
{"title":"A microwave-based gamma-ray detector","authors":"B. Cetinoneri, Y. Atesal, R. Kroeger, G. Tepper, J. Losee, Charles W Hicks, Marc Rasmussen, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2010.5515945","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515945","url":null,"abstract":"This paper presents a contactless, microwave-based gamma ray detector for detecting low-energy gamma ray photons. The detection is based on a microwave cavity perturbation method, and uses a reflection-type cavity resonator with a detector-grade CZT crystal. The reflected power from the cavity is measured and this monitors the changes in the photoconductivity of the CZT crystal in the presence of a gamma-ray. A gamma ray detection sensitivity of < 100 keV is achieved at room temperature. The proposed system can be used in homeland security or radioactive material characterization applications.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129923175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515733
Si Li, Qi Zhu, Xiaoju Yu, Nan Zhou, R. Mo, Weifeng Liu, H. Xin, Linhai Qiu
In this paper, the transmission properties of three 1-row periodic rod arrays, namely perfect conductor array, copper array with surface conductivity and single wall carbon nanotube (SWCNT) array with quantum conductivity, are investigated. MoM with special algorithms of Toeplitz matrices is employed. It is found that, due to the quantum effects, SWCNT array can transmit energy in a lower frequency and has broader passband. After that, the transmission properties of multi-row SWCNT array have been analyzed. Numerical results reveal that multi-row structure of SWCNT can improve the transmission efficiency.
{"title":"The quantum effects on the transmission properties of periodic rod array","authors":"Si Li, Qi Zhu, Xiaoju Yu, Nan Zhou, R. Mo, Weifeng Liu, H. Xin, Linhai Qiu","doi":"10.1109/MWSYM.2010.5515733","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515733","url":null,"abstract":"In this paper, the transmission properties of three 1-row periodic rod arrays, namely perfect conductor array, copper array with surface conductivity and single wall carbon nanotube (SWCNT) array with quantum conductivity, are investigated. MoM with special algorithms of Toeplitz matrices is employed. It is found that, due to the quantum effects, SWCNT array can transmit energy in a lower frequency and has broader passband. After that, the transmission properties of multi-row SWCNT array have been analyzed. Numerical results reveal that multi-row structure of SWCNT can improve the transmission efficiency.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131060003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517207
N. Sarkhosh, H. Emami, L. Bui, A. Mitchell
A Microwave photonic system which simultaneously implements multiple parallel IFMs within a single optical fiber is proposed and practically demonstrated. Three optical carriers of different wavelength are modulated by the same RF signal and then differentially delayed. All three carriers are then mixed in a highly nonlinear optical fiber. The mixing products are separated and the optical power of each can be related to the input RF frequency. We demonstrate simultaneous acquisition of two distinct frequency measurement responses over the range from 2–40GHz. This system is all-optical and requires no high-speed electronic components. Avenues for extending the number of simultaneous channels are identified.
{"title":"Microwave photonic instantaneous frequency measurement with simultaneous parallel operation within a single optical fiber","authors":"N. Sarkhosh, H. Emami, L. Bui, A. Mitchell","doi":"10.1109/MWSYM.2010.5517207","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517207","url":null,"abstract":"A Microwave photonic system which simultaneously implements multiple parallel IFMs within a single optical fiber is proposed and practically demonstrated. Three optical carriers of different wavelength are modulated by the same RF signal and then differentially delayed. All three carriers are then mixed in a highly nonlinear optical fiber. The mixing products are separated and the optical power of each can be related to the input RF frequency. We demonstrate simultaneous acquisition of two distinct frequency measurement responses over the range from 2–40GHz. This system is all-optical and requires no high-speed electronic components. Avenues for extending the number of simultaneous channels are identified.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131072136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517498
D. Schreurs, K. Leuven
Vector non-linear measurements emerged two decades ago, initiating a vast range of novel applications in microwave characterisation, modeling, and design. This paper focuses on its impact on microwave active device modeling. After sketching the evolution in instrumentation, the present capabilities are described. Today's developments are happening swiftly and on a large scale. As communication becomes more low-power, more wireless, and more bandwidth demanding, requirements for device models have evolved as well. In this paper, the present challenges in modeling and thus directions in instrumentation development are discussed.
{"title":"State-of-art, challenges and future directions in large signal measurements for active device modeling","authors":"D. Schreurs, K. Leuven","doi":"10.1109/MWSYM.2010.5517498","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517498","url":null,"abstract":"Vector non-linear measurements emerged two decades ago, initiating a vast range of novel applications in microwave characterisation, modeling, and design. This paper focuses on its impact on microwave active device modeling. After sketching the evolution in instrumentation, the present capabilities are described. Today's developments are happening swiftly and on a large scale. As communication becomes more low-power, more wireless, and more bandwidth demanding, requirements for device models have evolved as well. In this paper, the present challenges in modeling and thus directions in instrumentation development are discussed.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130716908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5514827
V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.
{"title":"A 22–39 GHz Passive mixer in SiGe:C bipolar technology","authors":"V. Issakov, H. Knapp, M. Wojnowski, A. Thiede, W. Simburger","doi":"10.1109/MWSYM.2010.5514827","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5514827","url":null,"abstract":"Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 – 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of −1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132458571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518166
M. Bozzi, M. Montagna, L. Perregrini
This paper presents a novel technique for the accurate modeling of printed periodic structures with thick metal patches. These structures include capacitive frequency selective surfaces (FSS) and metallo-dielectric electromagnetic band-gap (EBG) structures, and are typically modeled under the hypothesis of infinitely thin metal patches. Nevertheless, taking into account the finite thickness of the patches allows for a more accurate modeling, especially at mm-wave frequency, as well as for a better evaluation of conductor losses. The analysis technique proposed in this paper is based on the MoM/BI-RME method and permits to obtain an accurate and computationally efficient modeling tool. A validation example is reported in the case of a capacitive FSS and is compared to the results obtained with a commercial full-wave electromagnetic software.
{"title":"Modeling of printed periodic structures with thick metal patches by the MoM/BI-RME method","authors":"M. Bozzi, M. Montagna, L. Perregrini","doi":"10.1109/MWSYM.2010.5518166","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518166","url":null,"abstract":"This paper presents a novel technique for the accurate modeling of printed periodic structures with thick metal patches. These structures include capacitive frequency selective surfaces (FSS) and metallo-dielectric electromagnetic band-gap (EBG) structures, and are typically modeled under the hypothesis of infinitely thin metal patches. Nevertheless, taking into account the finite thickness of the patches allows for a more accurate modeling, especially at mm-wave frequency, as well as for a better evaluation of conductor losses. The analysis technique proposed in this paper is based on the MoM/BI-RME method and permits to obtain an accurate and computationally efficient modeling tool. A validation example is reported in the case of a capacitive FSS and is compared to the results obtained with a commercial full-wave electromagnetic software.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127935634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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