Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518306
A. Costanzo, Matteo Fabiani, A. Romani, D. Masotti, V. Rizzoli
The paper addresses a new approach to the integrated design of RF/Microwave receivers for power harvesting and conversion systems for ultra-low power densities. Such systems can be very useful in typical humanized environments in the presence of existing wireless systems with power densities as low as a few µW/cm2. Despite of the scarce RF power available, energy usable to extend battery life or to self-power low-duty cycle electronics may be scavenged by highly efficient receivers and power converter circuits designed in a unique design process. A multi-band antenna is used as the RF power receiver. Its rigorous frequency-dependent equivalent circuit in the presence of an incident field is used in the joint design of a rectifier stage and of a boost converter that can dynamically track the maximum power point. This is obtained by a new simulation platform combining SPICE-like time-domain models of dispersive multiport components with the transient analysis of the storage and control sub-systems.
{"title":"Co-design of ultra-low power RF/Microwave receivers and converters for RFID and energy harvesting applications","authors":"A. Costanzo, Matteo Fabiani, A. Romani, D. Masotti, V. Rizzoli","doi":"10.1109/MWSYM.2010.5518306","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518306","url":null,"abstract":"The paper addresses a new approach to the integrated design of RF/Microwave receivers for power harvesting and conversion systems for ultra-low power densities. Such systems can be very useful in typical humanized environments in the presence of existing wireless systems with power densities as low as a few µW/cm2. Despite of the scarce RF power available, energy usable to extend battery life or to self-power low-duty cycle electronics may be scavenged by highly efficient receivers and power converter circuits designed in a unique design process. A multi-band antenna is used as the RF power receiver. Its rigorous frequency-dependent equivalent circuit in the presence of an incident field is used in the joint design of a rectifier stage and of a boost converter that can dynamically track the maximum power point. This is obtained by a new simulation platform combining SPICE-like time-domain models of dispersive multiport components with the transient analysis of the storage and control sub-systems.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115173399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5516915
Y. Yusuf, X. Gong
A novel approach to integrate high-Q 3-D filters with highly efficient slot antennas is presented in this paper. This technique allows for seamless integration of 3-D filters and antennas, which can greatly improve the antenna efficiency and significantly reduce the form factor of RF front ends. A prototype four-pole chebyshev cavity filter integrated with a slot antenna is demonstrated in X band. The center frequency and fractional bandwidth of the filter/antenna system are 9.96 GHz and 6.0%, respectively. Due to the high Q factor (∼1,000) of the cavity resonator, the efficiency of the filter/antenna system is measured to be 89%, compared with the measured S21 of −0.5 dB (89%) for an identical filter. This means a near 100% efficient slot antenna is achieved within this integrated filter/antenna system. The measured impedance matching, efficiency, gain, and radiation pattern closely agree with simulation results.
{"title":"A new class of 3-D filter/antenna integration with high quality factor and high efficiency","authors":"Y. Yusuf, X. Gong","doi":"10.1109/MWSYM.2010.5516915","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5516915","url":null,"abstract":"A novel approach to integrate high-Q 3-D filters with highly efficient slot antennas is presented in this paper. This technique allows for seamless integration of 3-D filters and antennas, which can greatly improve the antenna efficiency and significantly reduce the form factor of RF front ends. A prototype four-pole chebyshev cavity filter integrated with a slot antenna is demonstrated in X band. The center frequency and fractional bandwidth of the filter/antenna system are 9.96 GHz and 6.0%, respectively. Due to the high Q factor (∼1,000) of the cavity resonator, the efficiency of the filter/antenna system is measured to be 89%, compared with the measured S21 of −0.5 dB (89%) for an identical filter. This means a near 100% efficient slot antenna is achieved within this integrated filter/antenna system. The measured impedance matching, efficiency, gain, and radiation pattern closely agree with simulation results.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121275892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5514679
L. Hady, A. Kishk, D. Kajfez
The use of high order mode bow-tie shaped dielectric resonator in the design of X-band 6-way power divider is presented. A combination of probe type of excitation integrated with microstrip technology are used to excite an H-polarized resonating mode around 10 GHz. For tapered power distribution, the 23° sectored angle bow-tie shaped dielectric resonator is enclosed within a cylindrical shielded cavity while additional phase compensation is implicitly considered in the feeding network design. Both input matching and in phase tapered power distribution are experimentally maintained within 150 MHz frequency band around the resonance. Measured scattering parameters magnitude and phase of the proposed 7-port structure are carried out to verify the results predicted by simulation.
{"title":"X-band microwave power divider based on bow-tie shaped dielectric resonator high-order modes","authors":"L. Hady, A. Kishk, D. Kajfez","doi":"10.1109/MWSYM.2010.5514679","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5514679","url":null,"abstract":"The use of high order mode bow-tie shaped dielectric resonator in the design of X-band 6-way power divider is presented. A combination of probe type of excitation integrated with microstrip technology are used to excite an H-polarized resonating mode around 10 GHz. For tapered power distribution, the 23° sectored angle bow-tie shaped dielectric resonator is enclosed within a cylindrical shielded cavity while additional phase compensation is implicitly considered in the feeding network design. Both input matching and in phase tapered power distribution are experimentally maintained within 150 MHz frequency band around the resonance. Measured scattering parameters magnitude and phase of the proposed 7-port structure are carried out to verify the results predicted by simulation.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127706779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518120
Thai Hoa Duong, Jae young Lee, I. Kim
This paper introduces a new wideband bandstop filter (BSF) with sharp roll-off characteristic in stripline structure. The BSF consists of two sections, the first is two capacitively coupled λ/4 short-circuited lines with opposite ground positions and the second a capacitively coupled λ/4 short-circuited line. The BSF provides three transmission zeros within the stopband and better than 22 dB rejection over the whole wireless local area network (WLAN) band from 5.15 to 5.825 GHz. The BSF embedded into an U.S. ultra-wideband (UWB: 3.1–10.6 GHz) bandpass filter (BPF) is simulated with HFSS and realized with low-temperature co-fired ceramic (LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results. The size of the UWB BPF including the BSF is 3 × 6.3 × 0.45 mm3.
{"title":"New bandstop filter based on capacitively coupled λ/4 short-circuited lines embedded into U.S. UWB BPF","authors":"Thai Hoa Duong, Jae young Lee, I. Kim","doi":"10.1109/MWSYM.2010.5518120","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518120","url":null,"abstract":"This paper introduces a new wideband bandstop filter (BSF) with sharp roll-off characteristic in stripline structure. The BSF consists of two sections, the first is two capacitively coupled λ/4 short-circuited lines with opposite ground positions and the second a capacitively coupled λ/4 short-circuited line. The BSF provides three transmission zeros within the stopband and better than 22 dB rejection over the whole wireless local area network (WLAN) band from 5.15 to 5.825 GHz. The BSF embedded into an U.S. ultra-wideband (UWB: 3.1–10.6 GHz) bandpass filter (BPF) is simulated with HFSS and realized with low-temperature co-fired ceramic (LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results. The size of the UWB BPF including the BSF is 3 × 6.3 × 0.45 mm3.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133480278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517569
C. Hsia, D. Kimball, S. Lanfranco, P. Asbeck
This paper presents a novel envelope amplifier architecture to improve the overall efficiency of wideband high linearity envelope tracking power amplifiers (PAs). We show here a technique to increase the efficiency of the envelope amplifier while maintaining the amplifier's bandwidth. The technique utilizes digital signal processing (DSP) control in conjunction with analog hysteretic feedback. Two high efficiency buck switching stages are coordinated to provide the wideband envelope power to the RF stage; a wide bandwidth linear regulator is also used at low power to maintain the envelope signal accuracy. The technique improves the efficiency of the envelope amplifier, especially for applications requiring high peak-to-average power ratio (PAPR) with wide bandwidth signals. The overall system was demonstrated using a GaAs high voltage HBT PA. For a variety of signals ranging from 6.6dB to 9.6dB PAR and up to 10MHz bandwidth, the overall system PAE reached above 50%, with a normalized power RMS error below 5% and ACLR1 of −50dBc with memory-less digital predistortion, at an average output power above 19W and gain of 10dB. The efficiencies obtained are the best ever reported, to our knowledge, for envelope tracking base station amplifiers for these signals.
{"title":"Wideband high efficiency digitally-assisted envelope amplifier with dual switching stages for radio base-station envelope tracking power amplifiers","authors":"C. Hsia, D. Kimball, S. Lanfranco, P. Asbeck","doi":"10.1109/MWSYM.2010.5517569","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517569","url":null,"abstract":"This paper presents a novel envelope amplifier architecture to improve the overall efficiency of wideband high linearity envelope tracking power amplifiers (PAs). We show here a technique to increase the efficiency of the envelope amplifier while maintaining the amplifier's bandwidth. The technique utilizes digital signal processing (DSP) control in conjunction with analog hysteretic feedback. Two high efficiency buck switching stages are coordinated to provide the wideband envelope power to the RF stage; a wide bandwidth linear regulator is also used at low power to maintain the envelope signal accuracy. The technique improves the efficiency of the envelope amplifier, especially for applications requiring high peak-to-average power ratio (PAPR) with wide bandwidth signals. The overall system was demonstrated using a GaAs high voltage HBT PA. For a variety of signals ranging from 6.6dB to 9.6dB PAR and up to 10MHz bandwidth, the overall system PAE reached above 50%, with a normalized power RMS error below 5% and ACLR1 of −50dBc with memory-less digital predistortion, at an average output power above 19W and gain of 10dB. The efficiencies obtained are the best ever reported, to our knowledge, for envelope tracking base station amplifiers for these signals.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131799854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518321
J. Palmour, C. Hallin, A. Burk, F. Radulescu, D. Namishia, H. Hagleitner, J. Duc, Bill Pribble, S. Sheppard, J. Barner, J. Milligan
100 mm diameter 4H-SiC High Purity Semi-insulating substrates are now being manufactured in high volume. GaN HEMT layers grown on 100 mm SiC substrates have shown excellent sheet resistivity and AlGaN thickness uniformities (σ/mean) of 1.3 and 1.1%, respectively. The fabrication process for MMIC manufacture was adapted to the larger diameter substrates without requiring any change to the process design kits for the foundry. MIM capacitor processes were optimized, and resistor process, wafer thinning and slot via etching were all adapted to the larger platform. These 100 mm wafers are now being used in high volume production of both high power discrete GaN devices, as well as MMICs. Commercially available MMICs have been released to production using this 100 mm platform. A wide band 25 Watt power amplifier is discussed, along with a 3 watt driver capable of DC-4 GHz operation.
100毫米直径的4H-SiC高纯度半绝缘衬底目前正在大量生产。在100 mm SiC衬底上生长的GaN HEMT层具有优异的片电阻率和厚度均匀性(σ/平均值)，分别为1.3和1.1%。MMIC制造的制造工艺适用于更大直径的基板，而不需要对铸造厂的工艺设计套件进行任何更改。对MIM电容工艺进行了优化，并对电阻工艺、晶圆减薄工艺和蚀刻槽工艺进行了优化。这些100毫米晶圆现在被用于高功率分立GaN器件和mmic的大批量生产。商用mmic已经使用这个100mm平台投入生产。讨论了宽带25瓦功率放大器，以及能够DC-4 GHz工作的3瓦驱动器。
{"title":"100 mm GaN-on-SiC RF MMIC technology","authors":"J. Palmour, C. Hallin, A. Burk, F. Radulescu, D. Namishia, H. Hagleitner, J. Duc, Bill Pribble, S. Sheppard, J. Barner, J. Milligan","doi":"10.1109/MWSYM.2010.5518321","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518321","url":null,"abstract":"100 mm diameter 4H-SiC High Purity Semi-insulating substrates are now being manufactured in high volume. GaN HEMT layers grown on 100 mm SiC substrates have shown excellent sheet resistivity and AlGaN thickness uniformities (σ/mean) of 1.3 and 1.1%, respectively. The fabrication process for MMIC manufacture was adapted to the larger diameter substrates without requiring any change to the process design kits for the foundry. MIM capacitor processes were optimized, and resistor process, wafer thinning and slot via etching were all adapted to the larger platform. These 100 mm wafers are now being used in high volume production of both high power discrete GaN devices, as well as MMICs. Commercially available MMICs have been released to production using this 100 mm platform. A wide band 25 Watt power amplifier is discussed, along with a 3 watt driver capable of DC-4 GHz operation.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134168907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515693
Timo Aitto-oja
Wideband supply voltage modulator with efficiency of 85.1% at 120 W average output power with 7.5dB PAPR (Peak to average power ratio) (WCDMA, LTE, MC-GSM signals), and 91.7% at 130W output power with 0dB PAPR (GSM applications), was built. Supply voltage modulator consists of a linear amplifier and a switching stage in parallel. The linear amplifier is controlled by an envelope signal, and a novel method for controlling the switching stage is presented, resulting in high efficiency and low sensitivity to component variations. Over 20%-unit efficiency improvement in back-off was achieved with the new control method. The measured efficiency was above 80% over 14dB average power range with 7.5dB PAPR test signal. Demonstrator circuit was built from discrete commercial components. An ET PA implemented with demonstrator modulator exhibited -60dBc ACP linearity with dual carrier 7.5dB PAPR WCDMA signal. For more wideband and compact ET PA implementation integrated circuit (IC) was fabricated and ET PA implemented with the IC modulator achieved -58dBc ACP linearity with quad carrier 7.5dB PAPR WCDMA signal. Wideband operation required special design for PA supply feed line design.
{"title":"High efficiency envelope tracking supply voltage modulator for high power base station amplifier applications","authors":"Timo Aitto-oja","doi":"10.1109/MWSYM.2010.5515693","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515693","url":null,"abstract":"Wideband supply voltage modulator with efficiency of 85.1% at 120 W average output power with 7.5dB PAPR (Peak to average power ratio) (WCDMA, LTE, MC-GSM signals), and 91.7% at 130W output power with 0dB PAPR (GSM applications), was built. Supply voltage modulator consists of a linear amplifier and a switching stage in parallel. The linear amplifier is controlled by an envelope signal, and a novel method for controlling the switching stage is presented, resulting in high efficiency and low sensitivity to component variations. Over 20%-unit efficiency improvement in back-off was achieved with the new control method. The measured efficiency was above 80% over 14dB average power range with 7.5dB PAPR test signal. Demonstrator circuit was built from discrete commercial components. An ET PA implemented with demonstrator modulator exhibited -60dBc ACP linearity with dual carrier 7.5dB PAPR WCDMA signal. For more wideband and compact ET PA implementation integrated circuit (IC) was fabricated and ET PA implemented with the IC modulator achieved -58dBc ACP linearity with quad carrier 7.5dB PAPR WCDMA signal. Wideband operation required special design for PA supply feed line design.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134456215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515136
W. Ip, K. Cheng
This paper presents a novel design of microwave power divider with harmonic suppression. Explicit closed-form design equations are derived based upon even- and odd- mode analysis. The proposed circuit also features simple layout, compact size and enhanced stop-band attenuation. For demonstration, the simulated and experimental results of a 1 GHz power divider implemented on microstrip are given.
{"title":"A novel power divider design with enhanced harmonic suppression and simple layout","authors":"W. Ip, K. Cheng","doi":"10.1109/MWSYM.2010.5515136","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515136","url":null,"abstract":"This paper presents a novel design of microwave power divider with harmonic suppression. Explicit closed-form design equations are derived based upon even- and odd- mode analysis. The proposed circuit also features simple layout, compact size and enhanced stop-band attenuation. For demonstration, the simulated and experimental results of a 1 GHz power divider implemented on microstrip are given.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133126349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517721
Haijiang Ma, H. Yang
A novel coupled line structure based on two inter-wound right-handed metamaterial transmission lines is investigated. The basic approach is to compress, twist, and fragment (CTF) metal strips or discs periodically in a multi-layer structure to form a four port structure that carries the feature of a large slow-wave factor with a band selection capability. Dispersion characteristics of both odd and even modes are investigated with emphasis on phase equalization and impedance design. A specific metamaterial couple-lines structure is designed, fabricated and tested as an example. The measured results of the slow-wave factor and line impedance are in good agreement with those of simulated results. Potential applications of the proposed coupled line structure are also discussed.
{"title":"Dispersion characteristics of metamaterial slow-wave coupled lines","authors":"Haijiang Ma, H. Yang","doi":"10.1109/MWSYM.2010.5517721","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517721","url":null,"abstract":"A novel coupled line structure based on two inter-wound right-handed metamaterial transmission lines is investigated. The basic approach is to compress, twist, and fragment (CTF) metal strips or discs periodically in a multi-layer structure to form a four port structure that carries the feature of a large slow-wave factor with a band selection capability. Dispersion characteristics of both odd and even modes are investigated with emphasis on phase equalization and impedance design. A specific metamaterial couple-lines structure is designed, fabricated and tested as an example. The measured results of the slow-wave factor and line impedance are in good agreement with those of simulated results. Potential applications of the proposed coupled line structure are also discussed.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133880032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5518072
A. Vaz, H. Solar, I. Rebollo, I. Gutiérrez, R. Berenguer
A long range, low power UHF RFID analog front-end suitable for batteryless wireless sensors has been designed using a low cost 0.35µm CMOS standard process. The proposed front-end architecture allows the implementation of power management techniques that together with the power optimized blocks such as voltage limiter, ASK demodulator… provides a long reading range. The implemented voltage multiplier uses Schottky diodes to provide efficiencies higher than 35%. The measured UHF RFID analog front-end current consumption is 7.4µA. When assembling the analog front-end to a matched dipole antenna, the analog front-end would be able to provide a wireless communication up to 2.4m, from a 2W EIRP output power reader to a digital module + sensor, with an average power consumption up to 37.5µW. These characteristics allow the use of the proposed analog front-end in batteryless wireless sensor networks.
采用低成本的0.35 μ m CMOS标准工艺，设计了一种适用于无电池无线传感器的长距离、低功耗超高频RFID模拟前端。提出的前端架构允许实现电源管理技术，与电源优化模块(如电压限制器、ASK解调器等)一起提供较长的读取范围。所实现的电压倍增器使用肖特基二极管提供高于35%的效率。测量的UHF RFID模拟前端电流消耗为7.4µA。当将模拟前端与匹配的偶极天线组装在一起时，模拟前端将能够提供从2W EIRP输出功率读取器到数字模块+传感器的2.4m无线通信，平均功耗高达37.5 μ W。这些特性允许在无电池无线传感器网络中使用所提出的模拟前端。
{"title":"Long range, low power UHF RFID analog front-end suitable for batteryless wireless sensors","authors":"A. Vaz, H. Solar, I. Rebollo, I. Gutiérrez, R. Berenguer","doi":"10.1109/MWSYM.2010.5518072","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5518072","url":null,"abstract":"A long range, low power UHF RFID analog front-end suitable for batteryless wireless sensors has been designed using a low cost 0.35µm CMOS standard process. The proposed front-end architecture allows the implementation of power management techniques that together with the power optimized blocks such as voltage limiter, ASK demodulator… provides a long reading range. The implemented voltage multiplier uses Schottky diodes to provide efficiencies higher than 35%. The measured UHF RFID analog front-end current consumption is 7.4µA. When assembling the analog front-end to a matched dipole antenna, the analog front-end would be able to provide a wireless communication up to 2.4m, from a 2W EIRP output power reader to a digital module + sensor, with an average power consumption up to 37.5µW. These characteristics allow the use of the proposed analog front-end in batteryless wireless sensor networks.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115539123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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