Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5516819
Jeffrey D. Maas, W. Xu, P. Hendricks, W. Chappell
RF ion traps are useful in chemical analysis and have added benefits when scaled to smaller dimensions. For a miniature ion trap it is ideal to be able to predict the performance of the ion trap prior to fabrication in order to save time and optimize parameters. We have developed both the simulation and fabrication of scaled ion traps. The simulation tool allows us to model miniature ion traps in order to predict how the frequency and amplitude of the RF voltage could be scaled in order to optimize the performance of the ion trap. We demonstrate the performance of a scaled ion trap array fabricated through the integration of stereolithography on circuit board and compare its performance with our ion trajectory simulator.
{"title":"Miniature radio frequency ion trap mass spectrometry","authors":"Jeffrey D. Maas, W. Xu, P. Hendricks, W. Chappell","doi":"10.1109/MWSYM.2010.5516819","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5516819","url":null,"abstract":"RF ion traps are useful in chemical analysis and have added benefits when scaled to smaller dimensions. For a miniature ion trap it is ideal to be able to predict the performance of the ion trap prior to fabrication in order to save time and optimize parameters. We have developed both the simulation and fabrication of scaled ion traps. The simulation tool allows us to model miniature ion traps in order to predict how the frequency and amplitude of the RF voltage could be scaled in order to optimize the performance of the ion trap. We demonstrate the performance of a scaled ion trap array fabricated through the integration of stereolithography on circuit board and compare its performance with our ion trajectory simulator.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129235796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A fast clutter cancellation technique is proposed for quadrature Doppler radar to robustly detect the vital signals when clutters enter the test environment. The dc offset at baseband varies with the change of test environment, dramatically reducing the accuracy of vital signal detection. To solve this problem, a clutter cancellation generator is employed in the radar receiver. Based on the detected dc offset values in I and Q channels, the generator produces an output signal, anti-phase to the received clutter signal, such that the clutter signal is cancelled at RF frontend. Therefore the time-varying dc offset at baseband is eliminated. The clutter cancellation method is described and the experiment was conducted to demonstrate the proposed method.
{"title":"A fast clutter cancellation method in quadrature doppler radar for noncontact vital signal detection","authors":"Ting-Yueh Chin, Kun-Ying Lin, Sheng-Fuh Chang, Chia-Chan Chang","doi":"10.1109/MWSYM.2010.5516811","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5516811","url":null,"abstract":"A fast clutter cancellation technique is proposed for quadrature Doppler radar to robustly detect the vital signals when clutters enter the test environment. The dc offset at baseband varies with the change of test environment, dramatically reducing the accuracy of vital signal detection. To solve this problem, a clutter cancellation generator is employed in the radar receiver. Based on the detected dc offset values in I and Q channels, the generator produces an output signal, anti-phase to the received clutter signal, such that the clutter signal is cancelled at RF frontend. Therefore the time-varying dc offset at baseband is eliminated. The clutter cancellation method is described and the experiment was conducted to demonstrate the proposed method.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5514984
E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni
The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.
{"title":"An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology","authors":"E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni","doi":"10.1109/MWSYM.2010.5514984","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5514984","url":null,"abstract":"The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126445390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517408
A. Wentzel, C. Meliani, W. Heinrich
This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single tone at 420 MHz, encoded in standard band-pass delta-sigma modulation with 1.68 Gbps sampling frequency. The respective efficiency is 34%. We find that these values strongly vary with coding efficiency of the modulation and reach 19 W with 59% for square-wave excitation. In order to clarify the potential of the PA in more detail, the S-class characteristics at power back-off and with varying oversampling ratio are presented as well.
{"title":"RF class-S power amplifiers: State-of-the-art results and potential","authors":"A. Wentzel, C. Meliani, W. Heinrich","doi":"10.1109/MWSYM.2010.5517408","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517408","url":null,"abstract":"This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single tone at 420 MHz, encoded in standard band-pass delta-sigma modulation with 1.68 Gbps sampling frequency. The respective efficiency is 34%. We find that these values strongly vary with coding efficiency of the modulation and reach 19 W with 59% for square-wave excitation. In order to clarify the potential of the PA in more detail, the S-class characteristics at power back-off and with varying oversampling ratio are presented as well.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122304392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5514731
E. Alfonso, M. Baquero, P. Kildal, A. Valero-Nogueira, E. Rajo-Iglesias, J. I. Herranz
This paper presents recent advances is a new waveguiding technology referred to as ridge gap waveguides. The main advantages of the ridge gap waveguides compared to hollow waveguides are that they are planar and much cheaper to manufacture, in particular at high frequencies such as for millimeter and submillimeter waves. In these waveguides there are no mechanical joints across which electric currents must float. The gap waveguides have lower losses than microstrip lines, and they are completely shielded by metal so no additional packaging is needed, in contrast to the severe packaging problems associated with microstrip circuits. The gap waveguides are realized in a narrow gap between two parallel metal plates by using a texture on one of the surfaces. The waves follow metal ridges in the textured surface. All wave propagation in other directions is prohibited (in cutoff) by realizing a high impedance (ideally a perfect magnetic conductor) through the textured surface at both sides of all ridges. Thereby, cavity resonances do not appear within the band of operation. The paper studies the characteristic impedance of the line and presents simulations and measurements of circuits designed using this technology.
{"title":"Design of microwave circuits in ridge-gap waveguide technology","authors":"E. Alfonso, M. Baquero, P. Kildal, A. Valero-Nogueira, E. Rajo-Iglesias, J. I. Herranz","doi":"10.1109/MWSYM.2010.5514731","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5514731","url":null,"abstract":"This paper presents recent advances is a new waveguiding technology referred to as ridge gap waveguides. The main advantages of the ridge gap waveguides compared to hollow waveguides are that they are planar and much cheaper to manufacture, in particular at high frequencies such as for millimeter and submillimeter waves. In these waveguides there are no mechanical joints across which electric currents must float. The gap waveguides have lower losses than microstrip lines, and they are completely shielded by metal so no additional packaging is needed, in contrast to the severe packaging problems associated with microstrip circuits. The gap waveguides are realized in a narrow gap between two parallel metal plates by using a texture on one of the surfaces. The waves follow metal ridges in the textured surface. All wave propagation in other directions is prohibited (in cutoff) by realizing a high impedance (ideally a perfect magnetic conductor) through the textured surface at both sides of all ridges. Thereby, cavity resonances do not appear within the band of operation. The paper studies the characteristic impedance of the line and presents simulations and measurements of circuits designed using this technology.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121066115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515200
Ching‐Wen Tang, Wei Cheng, Janne-Wha Wu, Yuan-Chih Lin
A novel microwave balun with three coupled lines is provided in this paper. With broadside coupling and edge coupling among three coupled lines, the proposed balun is compact and a wide operating frequency range is obtained. At a central frequency of 2.45 GHz, this balun is fabricated on the FR4 printed circuit board and with overall size of 1.5 mm × 1.2 mm. The prototypical balun is simulated with the full-wave electromagnetic simulator IE3D. A good match between simulated and measured results validates the proposed balun.
本文提出了一种新型的三线耦合微波平衡器。该平衡器采用三根耦合线之间的宽边耦合和边耦合，结构紧凑，工作频率范围宽。该平衡器的中心频率为2.45 GHz，在FR4印刷电路板上制作，整体尺寸为1.5 mm × 1.2 mm。利用全波电磁模拟器IE3D对原型平衡器进行了仿真。仿真结果与实测结果吻合较好，验证了该平衡器的有效性。
{"title":"Design of a compact balun with three octant-wavelength coupled lines","authors":"Ching‐Wen Tang, Wei Cheng, Janne-Wha Wu, Yuan-Chih Lin","doi":"10.1109/MWSYM.2010.5515200","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515200","url":null,"abstract":"A novel microwave balun with three coupled lines is provided in this paper. With broadside coupling and edge coupling among three coupled lines, the proposed balun is compact and a wide operating frequency range is obtained. At a central frequency of 2.45 GHz, this balun is fabricated on the FR4 printed circuit board and with overall size of 1.5 mm × 1.2 mm. The prototypical balun is simulated with the full-wave electromagnetic simulator IE3D. A good match between simulated and measured results validates the proposed balun.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121230333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5515989
Z. Griffith, W. Ha, Peter Chen, Daehyun Kim, B. Brar
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206–294 GHz, formed by common-source configured 35 nm Lg InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain is 11–16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW PDC. This is the first reported InP HEMT MMIC operating in G-, H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1–67, 140–200, 210–310 GHz) and amplifier (206–320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77×0.40 mm2.
{"title":"A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment","authors":"Z. Griffith, W. Ha, Peter Chen, Daehyun Kim, B. Brar","doi":"10.1109/MWSYM.2010.5515989","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5515989","url":null,"abstract":"We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206–294 GHz, formed by common-source configured 35 nm L<inf>g</inf> InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S<inf>21</inf> mid-band gain is 11–16 dB, 3 dB bandwidth at 294 GHz, and 82.5 mW P<inf>DC</inf>. This is the first reported InP HEMT MMIC operating in G-, H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1–67, 140–200, 210–310 GHz) and amplifier (206–320 GHz) measurements are presented from an unthinned, 25 mil substrate. The total size of this 3-stage amplifier is only 0.77×0.40 mm<sup>2</sup>.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116650005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517297
C. Yuen, K. Laursen, D. Chu, Y. Pao, A. Chernyakov, P. Heide
A flip chip single die WiFi FEM is developed using Bi-FET (HBT+E/D-PHEMT) technology for smart phone application. High thermal conductive copper-pillar bumps were developed for the flip chip process. This FEM flip chip die consists of a high-pass filter (HPF), a 2GHz WiFi PA with on-chip regulator, PAON logic and detector circuit, and an SP3T. It showed good over-voltage and over-temperature performance when mounted on test LTCC module. Thermal modeling and design optimization kept junction temperatures comparable to wirebond versions of the design. A complete WiFi front-end LTCC module was developed using flip chip FEIC, integrated balun and SAW filter, with 3.2mmx3.2mm size for Smart Phone Application.
{"title":"A compact flip chip single die WiFi FEM for smart phone application","authors":"C. Yuen, K. Laursen, D. Chu, Y. Pao, A. Chernyakov, P. Heide","doi":"10.1109/MWSYM.2010.5517297","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517297","url":null,"abstract":"A flip chip single die WiFi FEM is developed using Bi-FET (HBT+E/D-PHEMT) technology for smart phone application. High thermal conductive copper-pillar bumps were developed for the flip chip process. This FEM flip chip die consists of a high-pass filter (HPF), a 2GHz WiFi PA with on-chip regulator, PAON logic and detector circuit, and an SP3T. It showed good over-voltage and over-temperature performance when mounted on test LTCC module. Thermal modeling and design optimization kept junction temperatures comparable to wirebond versions of the design. A complete WiFi front-end LTCC module was developed using flip chip FEIC, integrated balun and SAW filter, with 3.2mmx3.2mm size for Smart Phone Application.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124907302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517664
C. Huang, M. Doherty, P. Antognetti, L. Lam, W. Vaillancourt
A highly integrated SiGe BiCMOS power amplifier for dual-band WLAN applications is presented. The PA has 2 and 3 stages of amplification for the ‘b/g’ and ‘a’ band, respectively, and integrates the input/output matching network, out-of-band rejection filter, power detector, and bias control. The die area is 1.7 × 1.6 mm2. The b/g amplifier achieves 28 dB gain with 19.5 dBm output power at 3% EVM and 185mA and harmonics of < −45dBm/Mhz. The a-band amplifier achieves 30 dB gain with 3% EVM at 19.0 dBm output with 220mA of current and harmonics < −50 dBm/MHz. The reported PA linearity, out-of-band rejection, and integration level exceeds previously reported WLAN dual-band SiGe PA designs.
{"title":"A highly integrated dual band sige BiCMOS power amplifier that simplifies dual-band WLAN and MIMO front-end circuit designs","authors":"C. Huang, M. Doherty, P. Antognetti, L. Lam, W. Vaillancourt","doi":"10.1109/MWSYM.2010.5517664","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517664","url":null,"abstract":"A highly integrated SiGe BiCMOS power amplifier for dual-band WLAN applications is presented. The PA has 2 and 3 stages of amplification for the ‘b/g’ and ‘a’ band, respectively, and integrates the input/output matching network, out-of-band rejection filter, power detector, and bias control. The die area is 1.7 × 1.6 mm2. The b/g amplifier achieves 28 dB gain with 19.5 dBm output power at 3% EVM and 185mA and harmonics of < −45dBm/Mhz. The a-band amplifier achieves 30 dB gain with 3% EVM at 19.0 dBm output with 220mA of current and harmonics < −50 dBm/MHz. The reported PA linearity, out-of-band rejection, and integration level exceeds previously reported WLAN dual-band SiGe PA designs.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122532876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-23DOI: 10.1109/MWSYM.2010.5517363
Morgan J. Chen, S. Tabatabaei
We present design and development of a low-cost, quad flat no-lead (QFN) package that operates over DC to 40 GHz frequencies and is fully compatible with existing leadframe processes. Further, we discuss a novel technique to characterize the package interconnect that first involves removal of plastic from the package. Once the die-paddle is exposed, a probe-ready alumina substrate adapter is inserted and wire bound to allow for GSG probing. This places the internal reference plane where the package would encounter the chip. Plastic is then selectively back-filled in order to maintain dielectric effects in measurement. Insertion loss through a single transition is measured to be less than 0.4 dB across the entire band up through 40 GHz. Return losses are measured to be better than 18 dB over the same band. A bare die broadband voltage-variable attenuator (VVA) is packaged for demonstration. The packaged VVA demonstrates excellent matching with less than 1.7 dB added attenuation due to packaging effects and excellent broadband match over DC-40 GHz. Dynamic range for the VVA QFN is maintained to be greater than 27 dB at 40 GHz.
{"title":"Broadband, quad flat no-lead (QFN) package developed using standard overmold leadframe technology","authors":"Morgan J. Chen, S. Tabatabaei","doi":"10.1109/MWSYM.2010.5517363","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517363","url":null,"abstract":"We present design and development of a low-cost, quad flat no-lead (QFN) package that operates over DC to 40 GHz frequencies and is fully compatible with existing leadframe processes. Further, we discuss a novel technique to characterize the package interconnect that first involves removal of plastic from the package. Once the die-paddle is exposed, a probe-ready alumina substrate adapter is inserted and wire bound to allow for GSG probing. This places the internal reference plane where the package would encounter the chip. Plastic is then selectively back-filled in order to maintain dielectric effects in measurement. Insertion loss through a single transition is measured to be less than 0.4 dB across the entire band up through 40 GHz. Return losses are measured to be better than 18 dB over the same band. A bare die broadband voltage-variable attenuator (VVA) is packaged for demonstration. The packaged VVA demonstrates excellent matching with less than 1.7 dB added attenuation due to packaging effects and excellent broadband match over DC-40 GHz. Dynamic range for the VVA QFN is maintained to be greater than 27 dB at 40 GHz.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131095542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：