Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310197
V. Shayapov
Some possibilities of surface acoustic wave spectroscopy (SAWS) for thin films investigation are considered. Information value of SAWS method is dependent on the form of sound velocity dispersion curve. Non-linear dispersion curve allow obtaining of two values of four which describe film's properties. Linear dispersion curve makes it possible to calculate only one film's property. Special approach is presented to overcome this limitation. Boron carbonitride BCxNy and silicon carbonitride SiCxNyHz films are studied by SAWS. Their densities and Young's modules are determined. The results are corresponding to known data on structure and composition of the films.
{"title":"Application of surface acoustic wave spectroscopy for study of physical properties of thin films","authors":"V. Shayapov","doi":"10.1109/EDM.2012.6310197","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310197","url":null,"abstract":"Some possibilities of surface acoustic wave spectroscopy (SAWS) for thin films investigation are considered. Information value of SAWS method is dependent on the form of sound velocity dispersion curve. Non-linear dispersion curve allow obtaining of two values of four which describe film's properties. Linear dispersion curve makes it possible to calculate only one film's property. Special approach is presented to overcome this limitation. Boron carbonitride BCxNy and silicon carbonitride SiCxNyHz films are studied by SAWS. Their densities and Young's modules are determined. The results are corresponding to known data on structure and composition of the films.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130569568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310221
S. Lisakov, A. V. Kuraev, A. Pavlov, E. Sypin
The paper describes the construction principle of multi-point electro-optical system, intended to determine the spatial arrangement the source of the explosion in potentially dangerous protected object of complex shape, and formulated approaches to its simulation.
{"title":"Simulation of multipoint electro-optical system to determine the arrangement of the explosion source","authors":"S. Lisakov, A. V. Kuraev, A. Pavlov, E. Sypin","doi":"10.1109/EDM.2012.6310221","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310221","url":null,"abstract":"The paper describes the construction principle of multi-point electro-optical system, intended to determine the spatial arrangement the source of the explosion in potentially dangerous protected object of complex shape, and formulated approaches to its simulation.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128855714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310239
A. V. Geist, M. V. Balagurov, P. Bachurin, D. Korobkov, D. Makarov
This paper touches the problem of development modern semiconductor converter of the electrical energy for mining electrical equipment supply. The converteris builtin line with multilevel topology. It is be able to overcome fundamental disadvantages of the existing systems. Also, the paper presents experimental results.
{"title":"Semiconductor converter of the electrical energy for mining electrical equipment supply","authors":"A. V. Geist, M. V. Balagurov, P. Bachurin, D. Korobkov, D. Makarov","doi":"10.1109/EDM.2012.6310239","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310239","url":null,"abstract":"This paper touches the problem of development modern semiconductor converter of the electrical energy for mining electrical equipment supply. The converteris builtin line with multilevel topology. It is be able to overcome fundamental disadvantages of the existing systems. Also, the paper presents experimental results.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127415997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310225
V. Kichigin, I. Petukhov, S. Mushinsky, V. Oborin, A. Minkin, L. N. Malinina, D. Shevtsov, A. B. Volyntsev
Methods of chemical etching, non-contact profilometry, X-ray analysis and mode spectroscopy enabled to find out that proton exchange channel waveguides formed on Z cut of lithium niobate crystal in the molten benzoic acid with the addition of 3 mol.% of lithium benzoate at the temperature of 225°C were composed of κ2-phase and a thin layer of α-phase. Proton exchange on +Z and -Z faces of the lithium niobate crystal in benzoic acid (with or without the addition of lithium benzoate) occurs at the same rate.
{"title":"Structure and properties of proton exchange waveguides on Z cut of lithium niobate crystal fabricated in molten benzoic acid with the addition of lithium benzoate","authors":"V. Kichigin, I. Petukhov, S. Mushinsky, V. Oborin, A. Minkin, L. N. Malinina, D. Shevtsov, A. B. Volyntsev","doi":"10.1109/EDM.2012.6310225","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310225","url":null,"abstract":"Methods of chemical etching, non-contact profilometry, X-ray analysis and mode spectroscopy enabled to find out that proton exchange channel waveguides formed on Z cut of lithium niobate crystal in the molten benzoic acid with the addition of 3 mol.% of lithium benzoate at the temperature of 225°C were composed of κ2-phase and a thin layer of α-phase. Proton exchange on +Z and -Z faces of the lithium niobate crystal in benzoic acid (with or without the addition of lithium benzoate) occurs at the same rate.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129106863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310184
A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, P. S. Zazulya, G. N. Kamaev
Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.
{"title":"Direct nitridation of silicon surface by high-density inductively coupled plasma","authors":"A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, P. S. Zazulya, G. N. Kamaev","doi":"10.1109/EDM.2012.6310184","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310184","url":null,"abstract":"Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114896227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310202
V. Khmelev, R. Golykh, A. Shalunov
This paper proposes new approach based on mathematical modeling to optimization modes and conditions of ultrasonic influence to increase efficiency of technological processes. For the analysis of processes, a general ultrasonic technological processes scheme taking into account the main physical effects that determine the course of processes depending on the physical state and location of the active medium with respect to the treated passive protection, which limits the active medium. The feature of the mathematical model of ultrasonic process is accounting for viscous effects in gas and liquid active medium that have not been previously investigated. Taking into account their impact the optimal modes and conditions of ultrasonic treatment were calculated. Determined optimal modes and conditions will provide the development of specialized ultrasound equipment for industrial applications with maximum efficiency.
{"title":"Optimization of these modes and conditions of ultrasonic influence on various technological mediums by mathematical modeling","authors":"V. Khmelev, R. Golykh, A. Shalunov","doi":"10.1109/EDM.2012.6310202","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310202","url":null,"abstract":"This paper proposes new approach based on mathematical modeling to optimization modes and conditions of ultrasonic influence to increase efficiency of technological processes. For the analysis of processes, a general ultrasonic technological processes scheme taking into account the main physical effects that determine the course of processes depending on the physical state and location of the active medium with respect to the treated passive protection, which limits the active medium. The feature of the mathematical model of ultrasonic process is accounting for viscous effects in gas and liquid active medium that have not been previously investigated. Taking into account their impact the optimal modes and conditions of ultrasonic treatment were calculated. Determined optimal modes and conditions will provide the development of specialized ultrasound equipment for industrial applications with maximum efficiency.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122200629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310187
A. Sherstneva
The Analysis is executed on the basis of the theory of systems of mass service. Formulas for calculation and comparisons of key parameters of functioning of the Call-center are received. With use of the data of system of monitoring and diagnostics schedules of dependence of an average waiting time of service from number of operators are constructed in view of a level of given service.
{"title":"The analysis of mathematical models functioning call center","authors":"A. Sherstneva","doi":"10.1109/EDM.2012.6310187","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310187","url":null,"abstract":"The Analysis is executed on the basis of the theory of systems of mass service. Formulas for calculation and comparisons of key parameters of functioning of the Call-center are received. With use of the data of system of monitoring and diagnostics schedules of dependence of an average waiting time of service from number of operators are constructed in view of a level of given service.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127183011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310238
V. Shcherbakov, A. Garganeev, I. Shakirov
Basic video sequence stabilization algorithm has been considered. Anchor points search method and shift determining method which based on the wavelet trasform use in the Lucas-Kanade method have been proposed and investigated. It have been shown that use of the proposed approach improves noise immunity of the whole stabilization algorithm.
{"title":"The stabilization algorithm based on the Lucas-Kanade method in wavelet spectrum","authors":"V. Shcherbakov, A. Garganeev, I. Shakirov","doi":"10.1109/EDM.2012.6310238","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310238","url":null,"abstract":"Basic video sequence stabilization algorithm has been considered. Anchor points search method and shift determining method which based on the wavelet trasform use in the Lucas-Kanade method have been proposed and investigated. It have been shown that use of the proposed approach improves noise immunity of the whole stabilization algorithm.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134104110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310254
S. Kharitonov, P. Bachurin, A. V. Geist, D. Makarov, D. Shtein
Dual Z-Source inverter is considered. Simulation results of the aircraft variable-speed/ constant frequency power generation system with dual Z-source inverter are presented. The system is compared to that with the Pulse-Width Modulated (PWM) voltage source inverter.
{"title":"Comparison of Dual Z-Source inverter and PWM voltage source inverter for aircraft power generation system","authors":"S. Kharitonov, P. Bachurin, A. V. Geist, D. Makarov, D. Shtein","doi":"10.1109/EDM.2012.6310254","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310254","url":null,"abstract":"Dual Z-Source inverter is considered. Simulation results of the aircraft variable-speed/ constant frequency power generation system with dual Z-source inverter are presented. The system is compared to that with the Pulse-Width Modulated (PWM) voltage source inverter.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133816661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-02DOI: 10.1109/EDM.2012.6310191
A. Zhuravlev, A. K. Shadt, D. Shevtsov
In this paper, a numerical simulation of the slot-vee antennas based on lithium niobate were carried for determine the possibility to use this antenna as an electrode system of the integrated electro-optical modulator.
本文对基于铌酸锂的槽形天线进行了数值模拟，以确定该天线作为集成电光调制器电极系统的可能性。
{"title":"Numeric simulation of the slot-vee antenna as an integrated electro-optical modulator electrode system","authors":"A. Zhuravlev, A. K. Shadt, D. Shevtsov","doi":"10.1109/EDM.2012.6310191","DOIUrl":"https://doi.org/10.1109/EDM.2012.6310191","url":null,"abstract":"In this paper, a numerical simulation of the slot-vee antennas based on lithium niobate were carried for determine the possibility to use this antenna as an electrode system of the integrated electro-optical modulator.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116927287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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