Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188786
M. Beham, A. B. Gurulakshmi
Image processing is one of most growing research area these days and now it is very much integrated with the medical and biotechnology field. Image Processing can be used to analyze different medical and MRI images to get the abnormality in the image. This paper proposes an efficient K-means clustering algorithm under Morphological Image Processing (MIP). Medical Image segmentation deals with segmentation of tumor in CT and MR images for improved quality in medical diagnosis. It is an important process and a challenging problem due to noise presence in input images during image analysis. It is needed for applications involving estimation of the boundary of an object, classification of tissue abnormalities, shape analysis, contour detection. Segmentation determines as the process of dividing an image into disjoint homogeneous regions of a medical image. The amount of resources required to describe large set of data is simplified and is selected for tissue segmentation. In our paper, this segmentation is carried out using K-means clustering algorithm for better performance. This enhances the tumor boundaries more and is very fast when compared to many other clustering algorithms. This paper produces the reliable results that are less sensitive to error.
{"title":"Morphological image processing approach on the detection of tumor and cancer cells","authors":"M. Beham, A. B. Gurulakshmi","doi":"10.1109/ICDCSYST.2012.6188786","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188786","url":null,"abstract":"Image processing is one of most growing research area these days and now it is very much integrated with the medical and biotechnology field. Image Processing can be used to analyze different medical and MRI images to get the abnormality in the image. This paper proposes an efficient K-means clustering algorithm under Morphological Image Processing (MIP). Medical Image segmentation deals with segmentation of tumor in CT and MR images for improved quality in medical diagnosis. It is an important process and a challenging problem due to noise presence in input images during image analysis. It is needed for applications involving estimation of the boundary of an object, classification of tissue abnormalities, shape analysis, contour detection. Segmentation determines as the process of dividing an image into disjoint homogeneous regions of a medical image. The amount of resources required to describe large set of data is simplified and is selected for tissue segmentation. In our paper, this segmentation is carried out using K-means clustering algorithm for better performance. This enhances the tumor boundaries more and is very fast when compared to many other clustering algorithms. This paper produces the reliable results that are less sensitive to error.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122787239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188642
G. Ajay, R. Rajan, V. S. Chakravarthi
Electronic design Automation (EDA) tools are used for design verification before fabrication of the integrated circuits. The accuracy of the power measured using these EDA Tools are overlooked since the approximations are good enough to take design decisions. An error in the range of 9.6 - 14.18% is observed between the power indicated in the circuit by the tool and theoretical calculations. These approximations are not very well documented by the EDA tool vendors. Of late, with IP based design flow, power has been the major parameter to assess the quality of the IP core and accuracy of the power measurement of the CAD tools is important. The EDA simulation tools come with built-in functions to measure the power consumption. [1] In this paper we present different ways of measuring the power of the circuit using the EDA simulation tools and their accuracy when compared with the theoretical computations. Work demonstrates the most appropriate method of power measurement in a circuit using Cadence Virtuoso Analog design environment and its result browser.
{"title":"Accurate power measurement methodology for VLSI circuits using CAD tools","authors":"G. Ajay, R. Rajan, V. S. Chakravarthi","doi":"10.1109/ICDCSYST.2012.6188642","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188642","url":null,"abstract":"Electronic design Automation (EDA) tools are used for design verification before fabrication of the integrated circuits. The accuracy of the power measured using these EDA Tools are overlooked since the approximations are good enough to take design decisions. An error in the range of 9.6 - 14.18% is observed between the power indicated in the circuit by the tool and theoretical calculations. These approximations are not very well documented by the EDA tool vendors. Of late, with IP based design flow, power has been the major parameter to assess the quality of the IP core and accuracy of the power measurement of the CAD tools is important. The EDA simulation tools come with built-in functions to measure the power consumption. [1] In this paper we present different ways of measuring the power of the circuit using the EDA simulation tools and their accuracy when compared with the theoretical computations. Work demonstrates the most appropriate method of power measurement in a circuit using Cadence Virtuoso Analog design environment and its result browser.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126166077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188674
M. Najafi, A. Shahhoseini, S. Mirzakuchaki
In this paper, handwritten farsi numeral recognition task (0-9) is developed using Hamming neural network circuit based on single electron transistors. simulations were done using Hspice and MATLAB softwares, which in comparison with SIMON software to have high speed in simulink area.
{"title":"Handwritten farsi numeral recognition by neural network based on single electron transistors (SETs)","authors":"M. Najafi, A. Shahhoseini, S. Mirzakuchaki","doi":"10.1109/ICDCSYST.2012.6188674","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188674","url":null,"abstract":"In this paper, handwritten farsi numeral recognition task (0-9) is developed using Hamming neural network circuit based on single electron transistors. simulations were done using Hspice and MATLAB softwares, which in comparison with SIMON software to have high speed in simulink area.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125057644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188705
Michael Rani, Shanthi Prince
Laser communication links in space are attractive alternatives to present day microwave links. Space communications as employed in satellite to satellite link is traditionally performed using microwaves. High capacity intersatellite communication crosslinks will permit more efficient and more reliable operation of future satellite systems. The mass, power consumption and size of optical transceiver module will be smaller than that of a microwave transceiver. On the other hand, inter-satellite communication is limited by “satellite vibration”. The ultimate disadvantages include misalignment in tracking, signal attenuation and high BER (bit error rate). In this paper, effect of satellite vibration on various parameters like pointing angle, received signal power and hence the BER of the system are studied and plotted using Matlab simulation.
{"title":"A study on inter-satellite optical wireless communication and its performance analysis","authors":"Michael Rani, Shanthi Prince","doi":"10.1109/ICDCSYST.2012.6188705","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188705","url":null,"abstract":"Laser communication links in space are attractive alternatives to present day microwave links. Space communications as employed in satellite to satellite link is traditionally performed using microwaves. High capacity intersatellite communication crosslinks will permit more efficient and more reliable operation of future satellite systems. The mass, power consumption and size of optical transceiver module will be smaller than that of a microwave transceiver. On the other hand, inter-satellite communication is limited by “satellite vibration”. The ultimate disadvantages include misalignment in tracking, signal attenuation and high BER (bit error rate). In this paper, effect of satellite vibration on various parameters like pointing angle, received signal power and hence the BER of the system are studied and plotted using Matlab simulation.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125838931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188687
R. M. S. Ruth, L. Vanitha, F. Gnanaraj
In this paper, a passive scheme to determine the tampered region in digital images is proposed. The proposed scheme consists of splitting the image, estimation of quantization table from the peaks of the histogram of DCT coefficients, clustering the blocks using Self Organizing Map (SOM) which detects the tampered region. The variation resulting from the inconsistency of quantization table is utilized to detect tampered regions efficiently. The results show that the proposed scheme, effectively detects the tampered region.
{"title":"Forgery detection in digital images using Self Organizing Map","authors":"R. M. S. Ruth, L. Vanitha, F. Gnanaraj","doi":"10.1109/ICDCSYST.2012.6188687","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188687","url":null,"abstract":"In this paper, a passive scheme to determine the tampered region in digital images is proposed. The proposed scheme consists of splitting the image, estimation of quantization table from the peaks of the histogram of DCT coefficients, clustering the blocks using Self Organizing Map (SOM) which detects the tampered region. The variation resulting from the inconsistency of quantization table is utilized to detect tampered regions efficiently. The results show that the proposed scheme, effectively detects the tampered region.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"56 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121009187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188792
A. Das
A simple power law model (PLM) of J-V equation to characterize an illuminated solar cell can be represented as j = 1 - (1 - γ)ν - γνm where the normalized voltage, v and normalized current density j can be represented as ν=V/Voc and j=J/Jsc and γ and m are parameters related to the physical parameters of the solar cell. Using this model, the empirical equation for the peak power voltage works only for good quality solar cells. Here in this paper, a semi-empirical approach is considered to determine the peak power voltage for any illuminated solar cell.
{"title":"Determination of the peak power voltage using explicit PLM of an illuminated solar cell","authors":"A. Das","doi":"10.1109/ICDCSYST.2012.6188792","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188792","url":null,"abstract":"A simple power law model (PLM) of J-V equation to characterize an illuminated solar cell can be represented as j = 1 - (1 - γ)ν - γν<sup>m</sup> where the normalized voltage, v and normalized current density j can be represented as ν=V/V<sub>oc</sub> and j=J/J<sub>sc</sub> and γ and m are parameters related to the physical parameters of the solar cell. Using this model, the empirical equation for the peak power voltage works only for good quality solar cells. Here in this paper, a semi-empirical approach is considered to determine the peak power voltage for any illuminated solar cell.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127857313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188740
S. Bakshi, S. Das, H. Mehrotra, P. K. Sa
Iris detection depending on local features like SIFT (Scale Invariant Feature Transform) and SURF (Speeded up Robust Features) exhibits high accuracy though the approaches leave behind further scope for improvement due to the lack of proper choice of score generating function and score fusion. Usually the score of a matching algorithm is taken to be number of matches. However a properly chosen function of number of matches can also be considered as a score. The proposed approach in this paper performs a classification operation on the detected keypoints. Each set of the keypoints of the query image is subjected to nearest neighbour match with respective set of keypoints of the database image. Hence there are two scores generated by the matching of two classes. This paper also proposes a mathematical monotonic function on these two scores to generate a single score such that the final score value gives rise to better disjunction between genuine and imposter scores than conventional SIFT.
{"title":"Score level fusion of SIFT and SURF for iris","authors":"S. Bakshi, S. Das, H. Mehrotra, P. K. Sa","doi":"10.1109/ICDCSYST.2012.6188740","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188740","url":null,"abstract":"Iris detection depending on local features like SIFT (Scale Invariant Feature Transform) and SURF (Speeded up Robust Features) exhibits high accuracy though the approaches leave behind further scope for improvement due to the lack of proper choice of score generating function and score fusion. Usually the score of a matching algorithm is taken to be number of matches. However a properly chosen function of number of matches can also be considered as a score. The proposed approach in this paper performs a classification operation on the detected keypoints. Each set of the keypoints of the query image is subjected to nearest neighbour match with respective set of keypoints of the database image. Hence there are two scores generated by the matching of two classes. This paper also proposes a mathematical monotonic function on these two scores to generate a single score such that the final score value gives rise to better disjunction between genuine and imposter scores than conventional SIFT.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128408837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188770
S. Nandha Kumar, B. Bindu
AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power electronic innovations. In general, the AlGaN/GaN can operate at higher voltages and these high bias conditions induce high electric field within the device structure that leads to degradation in the device performance. Therefore, reliability is an important issue for the device that should be analyzed properly to make it more applicable for practical applications. In this paper, we have analyzed some of the degradation mechanisms such as self heating, charge trapping etc., that affects the reliability of HEMT. It is also reported the effect of these degradation mechanisms in transistor characteristics such as mobility, threshold voltage, drain current and gate-drain capacitance.
{"title":"Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)","authors":"S. Nandha Kumar, B. Bindu","doi":"10.1109/ICDCSYST.2012.6188770","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188770","url":null,"abstract":"AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power electronic innovations. In general, the AlGaN/GaN can operate at higher voltages and these high bias conditions induce high electric field within the device structure that leads to degradation in the device performance. Therefore, reliability is an important issue for the device that should be analyzed properly to make it more applicable for practical applications. In this paper, we have analyzed some of the degradation mechanisms such as self heating, charge trapping etc., that affects the reliability of HEMT. It is also reported the effect of these degradation mechanisms in transistor characteristics such as mobility, threshold voltage, drain current and gate-drain capacitance.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134028343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188699
G. Suresh, N. Lalitha, C. Rao, V. Sailaja
Digital Audio Watermarking involves the concealment of data within a discrete audio file. Intellectual property protection is the main driving force behind research in this area. So, an efficient yet simple audio watermarking algorithm in the frequency domain by embedding a visual watermark in the audio signal is proposed. Discrete Cosine Transform (DCT) along with Singular Value Decomposition (SVD) is used to embed the watermark image into the audio signal. Similarly, Discrete Wavelet Transform (DWT) and SVD is used as another technique. The performance of the two techniques is evaluated based on PSNR, MOS criteria and Pearson Correlation Coefficient (PCC). Experimental results show that the DCT-SVD method has good imperceptibility and is robust against different kinds of attacks such as noise adding, re-sampling, cropping.
{"title":"An efficient and simple Audio Watermarking using DCT-SVD","authors":"G. Suresh, N. Lalitha, C. Rao, V. Sailaja","doi":"10.1109/ICDCSYST.2012.6188699","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188699","url":null,"abstract":"Digital Audio Watermarking involves the concealment of data within a discrete audio file. Intellectual property protection is the main driving force behind research in this area. So, an efficient yet simple audio watermarking algorithm in the frequency domain by embedding a visual watermark in the audio signal is proposed. Discrete Cosine Transform (DCT) along with Singular Value Decomposition (SVD) is used to embed the watermark image into the audio signal. Similarly, Discrete Wavelet Transform (DWT) and SVD is used as another technique. The performance of the two techniques is evaluated based on PSNR, MOS criteria and Pearson Correlation Coefficient (PCC). Experimental results show that the DCT-SVD method has good imperceptibility and is robust against different kinds of attacks such as noise adding, re-sampling, cropping.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134400540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-15DOI: 10.1109/ICDCSYST.2012.6188749
M. Chakraverty, H. Kittur
The memristor is an electrical circuit element that is similar to a resistor but has the potential to maintain state between turning power on and off. These memristors are about half the size of the transistors found in current flash storage technology, allowing capacity of these devices to double. This paper discusses the basics of memristors, which is an electrical circuit element, and presents the first principle simulation results of Pt/TiO2-x - TiO2/Pt system where the central region has a boundary separating TiO2-x and TiO2 regions. This barrier is progressively shifted towards the TiO2-x region with applied bias to gradually increase the thickness of TiO2 region. A comparison of the electrical characteristics of the device when the TiO2 region is extended towards TiO2-x region is also presented. The basis of memristive behavior, the nonlinear hysteresis curve of memristor, has been obtained based upon the simulation results.
{"title":"Evidence of hysteresis from first principle dft simulations of I–V curves in Pt/TiO2−x - TiO2/Pt memristive systems","authors":"M. Chakraverty, H. Kittur","doi":"10.1109/ICDCSYST.2012.6188749","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2012.6188749","url":null,"abstract":"The memristor is an electrical circuit element that is similar to a resistor but has the potential to maintain state between turning power on and off. These memristors are about half the size of the transistors found in current flash storage technology, allowing capacity of these devices to double. This paper discusses the basics of memristors, which is an electrical circuit element, and presents the first principle simulation results of Pt/TiO2-x - TiO2/Pt system where the central region has a boundary separating TiO2-x and TiO2 regions. This barrier is progressively shifted towards the TiO2-x region with applied bias to gradually increase the thickness of TiO2 region. A comparison of the electrical characteristics of the device when the TiO2 region is extended towards TiO2-x region is also presented. The basis of memristive behavior, the nonlinear hysteresis curve of memristor, has been obtained based upon the simulation results.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133441941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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