The backgating characteristics of oxygen implant isolated, self aligned gate metal-semiconductor field effect transistors (MESFETs) have been correlated with the high spatial resolution, room temperature, scanning photoluminescence (sPL) maps of the LEC semi-insulating (SI) GaAs substrates upon which they were fabricated. Wafers from those boules that backgate strongly exhibit larger sPL contrast between dislocation cell walls and the cell interiors than those that backgate less severely. A model is proposed to explain the correlation, linking the non-radiative recombination center detected by sPL with the hole trap which is associated with the occurrence of backgating.
{"title":"Photolmninescence pre-screening of LEC semi-insulating GaAs substrates for the potential backgating performance of MESFET circuits","authors":"C. Miner, A. Harrison, R. Clayton","doi":"10.1109/SIM.1992.752698","DOIUrl":"https://doi.org/10.1109/SIM.1992.752698","url":null,"abstract":"The backgating characteristics of oxygen implant isolated, self aligned gate metal-semiconductor field effect transistors (MESFETs) have been correlated with the high spatial resolution, room temperature, scanning photoluminescence (sPL) maps of the LEC semi-insulating (SI) GaAs substrates upon which they were fabricated. Wafers from those boules that backgate strongly exhibit larger sPL contrast between dislocation cell walls and the cell interiors than those that backgate less severely. A model is proposed to explain the correlation, linking the non-radiative recombination center detected by sPL with the hole trap which is associated with the occurrence of backgating.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115776687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dynamic characteristics of dislocations in several III - V compound semiconductors with sphalerite structure are compared with each other, especially focusing on the difference between those in GaAs and InP. Impurities give rise to a quite rich variety of effects on dynamic behavior of dislocations in these materials. The dislocation mobilities and the impurity effects are much different among different types of dislocations in the same material. Such differences among different types of dislocations differ from material to material. It is shown how the dynamic characteristics of various types of dislocations are reflected on the characteristics in macroscopic deformation of these materials.
{"title":"Dynamic characteristics of dislocations and mechanical behaviour of III-V materials","authors":"K. Sumino, I. Yonenaga","doi":"10.1109/SIM.1992.752673","DOIUrl":"https://doi.org/10.1109/SIM.1992.752673","url":null,"abstract":"Dynamic characteristics of dislocations in several III - V compound semiconductors with sphalerite structure are compared with each other, especially focusing on the difference between those in GaAs and InP. Impurities give rise to a quite rich variety of effects on dynamic behavior of dislocations in these materials. The dislocation mobilities and the impurity effects are much different among different types of dislocations in the same material. Such differences among different types of dislocations differ from material to material. It is shown how the dynamic characteristics of various types of dislocations are reflected on the characteristics in macroscopic deformation of these materials.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130804552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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