R. Clayton, I.C. Bassignana, D.A. Macquistan, C. Miner
Micron scale birefringence mapping of 1 cm/sup 2/ portions of 3" semi-insulating GaAs wafers shows fluctuations over characteristic dimensions between 50 and 500 /spl mu/m, with magnitudes as large as 1/5 wavelength. The results are compared to those of more familiar characterisation tools, scanning photolurninescence mapping and x-ray topography. Scanning birefringence mapping resolves some of the same features as the other techniques, for example through wafer strain free low angle grain boundaries, while containing unique information related to the strain in the wafer. A model for the observed correlation is presented, and implications for substrate electro-optic probing are discussed.
{"title":"Scanning birefringence mapping of semi-insulating GaAs wafers","authors":"R. Clayton, I.C. Bassignana, D.A. Macquistan, C. Miner","doi":"10.1109/SIM.1992.752701","DOIUrl":"https://doi.org/10.1109/SIM.1992.752701","url":null,"abstract":"Micron scale birefringence mapping of 1 cm/sup 2/ portions of 3\" semi-insulating GaAs wafers shows fluctuations over characteristic dimensions between 50 and 500 /spl mu/m, with magnitudes as large as 1/5 wavelength. The results are compared to those of more familiar characterisation tools, scanning photolurninescence mapping and x-ray topography. Scanning birefringence mapping resolves some of the same features as the other techniques, for example through wafer strain free low angle grain boundaries, while containing unique information related to the strain in the wafer. A model for the observed correlation is presented, and implications for substrate electro-optic probing are discussed.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132200290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Jantz, R. Stibal, J. Windscheif, F. Mosel, G. Muller
The capacitive charge transient measurement technique generates laterally resolved two-dimensional resistivity topograms of wafers with diameters up to 150 mm. The method is applicable to semi-insulating substrates with resistivities between 10/sup 6/ and 10/sup 9//spl Omega/cm. The range and characteristic lateral patterns of homogeneity variations in substrates of different vendors will be addressed, including LEC GaAs, VB GaAs and LEC InP. The effect of annealing treatments and interrelations between electrical and optical topograms will also be discussed.
{"title":"Nondestructive high resolution resistivity topography of Semi-insulating GaAs and InP wafers","authors":"W. Jantz, R. Stibal, J. Windscheif, F. Mosel, G. Muller","doi":"10.1109/SIM.1992.752695","DOIUrl":"https://doi.org/10.1109/SIM.1992.752695","url":null,"abstract":"The capacitive charge transient measurement technique generates laterally resolved two-dimensional resistivity topograms of wafers with diameters up to 150 mm. The method is applicable to semi-insulating substrates with resistivities between 10/sup 6/ and 10/sup 9//spl Omega/cm. The range and characteristic lateral patterns of homogeneity variations in substrates of different vendors will be addressed, including LEC GaAs, VB GaAs and LEC InP. The effect of annealing treatments and interrelations between electrical and optical topograms will also be discussed.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115327039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Fornari, C. Frigeri, J. Weyher, S. Krawczyk, F. Krafft, G. Mignoni
Different microdefects have been identified in Fe-doped semi-insulating InP: i) very small defects located on dislocations, ii) relatively large precipitates embedded in the matrix, surrounded by a spherical volume depleted of iron, iii) large inclusions in the heavily doped crystal tails. Investigations of these defects by Photoetching, Scanning Photoluminescence, SEM and TEM suggest that: i) the large inclusions are due to incorporation of second-phase particles (FeP, FeP2) which form in the melt as it becomes very rich in iron, ii) the matrix precipitates are possibly the result of iron gathering around a collection point, iii) the small defects are different, in nature, from those containing iron and thought to be either very small precipitates or microloops.
{"title":"Microdefect Studies of Fe-Doped Semi-Insulating Inp","authors":"R. Fornari, C. Frigeri, J. Weyher, S. Krawczyk, F. Krafft, G. Mignoni","doi":"10.1109/SIM.1992.752674","DOIUrl":"https://doi.org/10.1109/SIM.1992.752674","url":null,"abstract":"Different microdefects have been identified in Fe-doped semi-insulating InP: i) very small defects located on dislocations, ii) relatively large precipitates embedded in the matrix, surrounded by a spherical volume depleted of iron, iii) large inclusions in the heavily doped crystal tails. Investigations of these defects by Photoetching, Scanning Photoluminescence, SEM and TEM suggest that: i) the large inclusions are due to incorporation of second-phase particles (FeP, FeP2) which form in the melt as it becomes very rich in iron, ii) the matrix precipitates are possibly the result of iron gathering around a collection point, iii) the small defects are different, in nature, from those containing iron and thought to be either very small precipitates or microloops.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128979741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.
{"title":"Fe doped semi-insulating indium phosphide substrate characterization for device applications","authors":"C. Grattepain, A. Huber","doi":"10.1109/SIM.1992.752699","DOIUrl":"https://doi.org/10.1109/SIM.1992.752699","url":null,"abstract":"The goal of this paper is the presentation of InP(Fe) characterization results obtained by etching technique on chemically angle polished samples (ETOCAPS) and secondary ion mass spectrometry (SIMS). Polishing quality of surfaces, internal crystal structures and chemical composition will studied of wafers from three suppliers of the world-market.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117080290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B.E. Freidenreich, K.D. Bronsema, Z. Korzeniowski, B. Nykiel, D. Francomano, J. Moore, R. E. Kremer
Ingot annealing has been applied to semi-insulating GaAs grown by the vertical Bridgman (VB) method. Significant changes in resistivity and mobility have been observed. In addition, major improvements in uniformity have also been seen. We have designed a multi-temperature ingot annealing process tailored specifically for the low dislocation density GaAs produced by the VB process. A model has been developed based on the dissolution of As precipitates and uniform redistribution of the arsenic that explains the annealing results we observe.
{"title":"Improved uniformity of SI-VB GaAs by annealing","authors":"B.E. Freidenreich, K.D. Bronsema, Z. Korzeniowski, B. Nykiel, D. Francomano, J. Moore, R. E. Kremer","doi":"10.1109/SIM.1992.752684","DOIUrl":"https://doi.org/10.1109/SIM.1992.752684","url":null,"abstract":"Ingot annealing has been applied to semi-insulating GaAs grown by the vertical Bridgman (VB) method. Significant changes in resistivity and mobility have been observed. In addition, major improvements in uniformity have also been seen. We have designed a multi-temperature ingot annealing process tailored specifically for the low dislocation density GaAs produced by the VB process. A model has been developed based on the dissolution of As precipitates and uniform redistribution of the arsenic that explains the annealing results we observe.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"30 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132948378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Garcia, A. Claverie, J. Mimila-Arroyo, J. Bourgoin
After a discussion of the various ways to produce semi-insulating InP layers, the structural and electrical properties of layers grown at low temperature by gas source molecular beam epitaxy are described, and the potentialities to obtain semi-insulating layers by this technique are examined.
{"title":"Semi-Insulating Epitaxial Semiconductors: The Case of InP","authors":"J. Garcia, A. Claverie, J. Mimila-Arroyo, J. Bourgoin","doi":"10.1109/SIM.1992.752693","DOIUrl":"https://doi.org/10.1109/SIM.1992.752693","url":null,"abstract":"After a discussion of the various ways to produce semi-insulating InP layers, the structural and electrical properties of layers grown at low temperature by gas source molecular beam epitaxy are described, and the potentialities to obtain semi-insulating layers by this technique are examined.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116195771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth
A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.
介绍了一种基于电容C(t)和交流电导G(t)同时瞬态分析的适用于半绝缘(SI)材料的DLTS的新改进方法——导纳瞬态光谱(ATS)。给出了C(t)、G(t)及其微分dC(t)、dG(t)和相关Sc(t)、SG(t)形式的公式。在仿真的基础上，总结了ATS的主要特点。将ATS应用于大量未掺杂和低温MBE SI GaAs的深能级态研究。其中一些结果在先前发表的结果的背景下进行了简要讨论。
{"title":"Investigation of deep-level states in bulk and low-temperature MBE semi-insulating GaAs by admittance transient spectroscopy","authors":"F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth","doi":"10.1109/SIM.1992.752710","DOIUrl":"https://doi.org/10.1109/SIM.1992.752710","url":null,"abstract":"A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans
The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.
{"title":"Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs","authors":"M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans","doi":"10.1109/SIM.1992.752691","DOIUrl":"https://doi.org/10.1109/SIM.1992.752691","url":null,"abstract":"The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"606 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121980930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MBE AlGaAs/GaAs heterostructures have been grown on semi-insulating GaAs wafers that received a standard pre-deposition wet chemical etch, while other wafers were subjected to ultraviolet-ozone radiation in addition to the standard pre clean. The ultraviolet-ozone radiation serves to reduce the concentration of carbon on the GaAs wafer surface. Enhancement and depletion mode field effect transistors were fabricated on these wafers. Device anomalies associated with the presence of deep levels were found for the standard cleaned wafers. We present device properties such as current-voltage characteristics, sidegating effects, photoresponse characteristics and output impedance measurements for both wafer preparations. Thermal activation energies for the deep acceptor level were determined from temperature and frequency dependent impedance measurements and conductance deep level transient spectroscopy. The occupation of this deep level for the standard cleaned wafers is explained in terms of the interfacial carbon concentration.
{"title":"MBE heterostructure device instabilities related to interfacial carbon impurities","authors":"M. L. Gray, M. Spector, J. D. Yoder","doi":"10.1109/SIM.1992.752686","DOIUrl":"https://doi.org/10.1109/SIM.1992.752686","url":null,"abstract":"MBE AlGaAs/GaAs heterostructures have been grown on semi-insulating GaAs wafers that received a standard pre-deposition wet chemical etch, while other wafers were subjected to ultraviolet-ozone radiation in addition to the standard pre clean. The ultraviolet-ozone radiation serves to reduce the concentration of carbon on the GaAs wafer surface. Enhancement and depletion mode field effect transistors were fabricated on these wafers. Device anomalies associated with the presence of deep levels were found for the standard cleaned wafers. We present device properties such as current-voltage characteristics, sidegating effects, photoresponse characteristics and output impedance measurements for both wafer preparations. Thermal activation energies for the deep acceptor level were determined from temperature and frequency dependent impedance measurements and conductance deep level transient spectroscopy. The occupation of this deep level for the standard cleaned wafers is explained in terms of the interfacial carbon concentration.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128604852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present status of crystal growth technology for preparing s.i. GaAs and InP is briefly reviewed considering LEC-techniques and improved versions as wen as Vertical Bridgman techniques. In the second part the post growth thermal treatment of crystals and wafers is discussed. Ingot and wafer annealing are commonly used procedures to improve the material properties of s.i. GaAs. Wafer annealing has only recently gained attraction for 10 since the preparation of nominally undoped s.i. InP has been demonstrated by our group. Finally the potential of new developments in the processing of s.i. III-V bulk growth will be discussed.
{"title":"Current Issues in the Bulk Growth of S.i. III-V Materials","authors":"G. Muller, G. Hirt, D. Hofmann","doi":"10.1109/SIM.1992.752680","DOIUrl":"https://doi.org/10.1109/SIM.1992.752680","url":null,"abstract":"The present status of crystal growth technology for preparing s.i. GaAs and InP is briefly reviewed considering LEC-techniques and improved versions as wen as Vertical Bridgman techniques. In the second part the post growth thermal treatment of crystals and wafers is discussed. Ingot and wafer annealing are commonly used procedures to improve the material properties of s.i. GaAs. Wafer annealing has only recently gained attraction for 10 since the preparation of nominally undoped s.i. InP has been demonstrated by our group. Finally the potential of new developments in the processing of s.i. III-V bulk growth will be discussed.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134629580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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