We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 /spl deg/C, and annealed at temperatures up to 700 /spl deg/C. A key element in the success of these measurements is removal of the substrate. Results include the first accurate measurement of mobility, which can be greater than 1000 cm/sup 2//V s in annealed material, and the discovery of a new, dense donor near E/sub C/ - 0.45 eV, which is much shallower than the well-known EL2-like donor in this material. Annealing behavior of the electrical and optical properties can be quite complicated due to the existence of at least two donors as well as an acceptor, and two types of conductivity, hopping and band.
{"title":"Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures","authors":"D. Look, G. Robinson, J. Sizelove, C. E. Stutz","doi":"10.1109/SIM.1992.752690","DOIUrl":"https://doi.org/10.1109/SIM.1992.752690","url":null,"abstract":"We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 /spl deg/C, and annealed at temperatures up to 700 /spl deg/C. A key element in the success of these measurements is removal of the substrate. Results include the first accurate measurement of mobility, which can be greater than 1000 cm/sup 2//V s in annealed material, and the discovery of a new, dense donor near E/sub C/ - 0.45 eV, which is much shallower than the well-known EL2-like donor in this material. Annealing behavior of the electrical and optical properties can be quite complicated due to the existence of at least two donors as well as an acceptor, and two types of conductivity, hopping and band.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122585711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
IN behaviour of p/Sl/n and p/n/SI/n configurations are studied and compared. These results are exploited to extract their contributions to leakage currents in two types of buried heterostructure lasers which use SI-InP:Fe as the current blocking layer.
{"title":"I-V behaviour of p/SI-InP: Fe/n and p/n /SI-InP/Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe","authors":"S. Lourdudoss, O. Kjebon, N. Nordell, J. Borglind","doi":"10.1109/SIM.1992.752720","DOIUrl":"https://doi.org/10.1109/SIM.1992.752720","url":null,"abstract":"IN behaviour of p/Sl/n and p/n/SI/n configurations are studied and compared. These results are exploited to extract their contributions to leakage currents in two types of buried heterostructure lasers which use SI-InP:Fe as the current blocking layer.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123789644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.
{"title":"Characterization of semi-insulating InP: Cu","authors":"R. P. Leon, P. Werner, E. Weber","doi":"10.1109/SIM.1992.752711","DOIUrl":"https://doi.org/10.1109/SIM.1992.752711","url":null,"abstract":"Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133894617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Wang, Y. Dai, C. Li, H. P. Lu, Z. Deng, S. Wan, S. Xu, M.F. Shun, H. Shun, L.Y. Lin
LEC undoped SI-GaAs materials obtained from different sources have been systematically investigated by using various techniques such as Hall effect measurements, IR absorption and Photoluminescence Mapping etc.. A strong dependence of electron mobility on spatial distribution of impurities and defects across the wafers revealed by spatially resolved photoluminescence at R.T. are observed. Spam-charge region scattering resulted from nominiformity is induced in theoretically calculating the electron mobility. A semi-empirical formula is presented by least-square fitting the mobility data obtained from temperature dependent Hall measurements. Additionally, the density and the scattering cross section of space-charge region and ionized impurity concentration were obtained.
{"title":"Effect of micro-uniformity on electron mobility of LEC undoped SI-GaAs crystals","authors":"Z. Wang, Y. Dai, C. Li, H. P. Lu, Z. Deng, S. Wan, S. Xu, M.F. Shun, H. Shun, L.Y. Lin","doi":"10.1109/SIM.1992.752712","DOIUrl":"https://doi.org/10.1109/SIM.1992.752712","url":null,"abstract":"LEC undoped SI-GaAs materials obtained from different sources have been systematically investigated by using various techniques such as Hall effect measurements, IR absorption and Photoluminescence Mapping etc.. A strong dependence of electron mobility on spatial distribution of impurities and defects across the wafers revealed by spatially resolved photoluminescence at R.T. are observed. Spam-charge region scattering resulted from nominiformity is induced in theoretically calculating the electron mobility. A semi-empirical formula is presented by least-square fitting the mobility data obtained from temperature dependent Hall measurements. Additionally, the density and the scattering cross section of space-charge region and ionized impurity concentration were obtained.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131676657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Enhanced and persistent photocurrents have been observed in many Czochralski GaAs samples. The temporal and thermal properties of the enhanced and persistent photocurrents have been studied. The temperature dependence of the persistent photocurrent suggests that at least two different persistent effects are being observed, one below 40K and another, separate mechanism above this temperature. It is proposed that the low temperature enhanced and persistent photocurrents are due, in addition to the transformation of EL2 into its metastable state, to a second bistable transformation.
{"title":"Enhanced and persistent photocurrents in bulk semi- insulating GaAs at low temperatures","authors":"W. Mitchel, L. S. Rea","doi":"10.1109/SIM.1992.752704","DOIUrl":"https://doi.org/10.1109/SIM.1992.752704","url":null,"abstract":"Enhanced and persistent photocurrents have been observed in many Czochralski GaAs samples. The temporal and thermal properties of the enhanced and persistent photocurrents have been studied. The temperature dependence of the persistent photocurrent suggests that at least two different persistent effects are being observed, one below 40K and another, separate mechanism above this temperature. It is proposed that the low temperature enhanced and persistent photocurrents are due, in addition to the transformation of EL2 into its metastable state, to a second bistable transformation.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127128982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Photoluminescence spectroscopy is used to characterize semi-insulating Czochralski-grown GaAs. The spectra show the differences induced by the different post growth annealing procedures, i.e. ingot- or wafer-annealing, single- or multi-step. The wafer annealing techniques definitely lead to an improvement of the crystalline quality, while ingot annealed crystals present additional defect related-emissions. For multi-step ingot-annealed crystals, two transitions around 1.45 eV are identified with the (e,A/spl ring/) and the (D/spl ring/,A/spl ring/) recombinations of an acceptor-like defect, different from the 78-meV double acceptor. On the other hand, wafer-annealed crystals present much lower concentrations of background impurities, as estimated by selective pair luminescence.
{"title":"Photolumineseence investigation of ingot- and wafer-annealing effects on semi-insulating GaAs","authors":"O. Ka, O. Oda, Y. Makita, A. Yamada","doi":"10.1109/SIM.1992.752685","DOIUrl":"https://doi.org/10.1109/SIM.1992.752685","url":null,"abstract":"Photoluminescence spectroscopy is used to characterize semi-insulating Czochralski-grown GaAs. The spectra show the differences induced by the different post growth annealing procedures, i.e. ingot- or wafer-annealing, single- or multi-step. The wafer annealing techniques definitely lead to an improvement of the crystalline quality, while ingot annealed crystals present additional defect related-emissions. For multi-step ingot-annealed crystals, two transitions around 1.45 eV are identified with the (e,A/spl ring/) and the (D/spl ring/,A/spl ring/) recombinations of an acceptor-like defect, different from the 78-meV double acceptor. On the other hand, wafer-annealed crystals present much lower concentrations of background impurities, as estimated by selective pair luminescence.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125363148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have investigated hydrogen passivation in semi-insulating InP:Fe by implanting single crystal samples with 0.5 to 2.0 MeV protons and deuterons at fluences ranging from 1 x 10/sup 16/ to 5 x 10/sup 17/ cm/sup -2/. These implants give rise to a series of local vibrational modes (LVMs) in infrared absorption which are due to the stretching vibration of the bonds formed between phosphorus and the implanted atom in the vicinity of various lattice defects and impurities. Systematic variations in these LVMs are observed as a function of implant energy, fluence, and annealing temperature.
{"title":"Infrared absorption in proton- and deuteron-implanted semi-insulating Inp: Fe","authors":"D. Fischer, M. O. Manasreh, G. Matous, S. Pearton","doi":"10.1109/SIM.1992.752709","DOIUrl":"https://doi.org/10.1109/SIM.1992.752709","url":null,"abstract":"We have investigated hydrogen passivation in semi-insulating InP:Fe by implanting single crystal samples with 0.5 to 2.0 MeV protons and deuterons at fluences ranging from 1 x 10/sup 16/ to 5 x 10/sup 17/ cm/sup -2/. These implants give rise to a series of local vibrational modes (LVMs) in infrared absorption which are due to the stretching vibration of the bonds formed between phosphorus and the implanted atom in the vicinity of various lattice defects and impurities. Systematic variations in these LVMs are observed as a function of implant energy, fluence, and annealing temperature.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124410830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Salvi, J. Viallet, H. L'haridon, P. Favennec, M. Gauneau
Implantation of magnesium acceptor in semi-insulating InP:Fe leads to a p-type layer which is further implanted with the low diffusitivity titanium deep donor, the sample recovering the semi-insulating behavior.
在半绝缘的InP:Fe中注入镁受体形成p型层，再注入低扩散率的钛深给体，样品恢复半绝缘行为。
{"title":"Semi-Insulating Inp Obtained by Co-Implantation of Mg and Ti","authors":"M. Salvi, J. Viallet, H. L'haridon, P. Favennec, M. Gauneau","doi":"10.1109/SIM.1992.752678","DOIUrl":"https://doi.org/10.1109/SIM.1992.752678","url":null,"abstract":"Implantation of magnesium acceptor in semi-insulating InP:Fe leads to a p-type layer which is further implanted with the low diffusitivity titanium deep donor, the sample recovering the semi-insulating behavior.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126806609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Reverse Contrast imaging is a photo-quenchable, absorption imaging technique, thought to result from absorption by very deep acceptors with an ionisation energy of approximately E/sub g/ - 65 meV near 4K. At temperatures above 140K, all optical behaviour disappears. In this paper we present Hall data on lightly n-type GaAs both before and after photoquenching of these defects and demonstrate that the predicted acceptor level exists and the concentration of the levels correlates with the RC absorption. Optical cross-sections for this absorption at 830 nm are thus derived.
{"title":"The correlation of reverse contrast absorption imaging with photoquenchable deep acceptor centres in semi-insulating LEC GaAs","authors":"S. Tuzemen, M. Brozel","doi":"10.1109/SIM.1992.752703","DOIUrl":"https://doi.org/10.1109/SIM.1992.752703","url":null,"abstract":"Reverse Contrast imaging is a photo-quenchable, absorption imaging technique, thought to result from absorption by very deep acceptors with an ionisation energy of approximately E/sub g/ - 65 meV near 4K. At temperatures above 140K, all optical behaviour disappears. In this paper we present Hall data on lightly n-type GaAs both before and after photoquenching of these defects and demonstrate that the predicted acceptor level exists and the concentration of the levels correlates with the RC absorption. Optical cross-sections for this absorption at 830 nm are thus derived.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129615009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
EL2 is an intrinsic, metastable donor defect which is important in making semi-insulating GaAs. Remarkably, even after a decade of intense investigation, the microscopic nature of the defect is still controversial. There are two models which must still be considered seriously, namely that EL2 is the isolated As/sub Ga/ antisite, and that EL2 also contains an arsenic interstitial on the [111] axis. This paper will comment on some of the experiments used to support each of the two models, and will discuss attempts to reconcile the two.
{"title":"Recent changes in our understanding of EL2 in GaAs","authors":"G. Baraff","doi":"10.1109/SIM.1992.752671","DOIUrl":"https://doi.org/10.1109/SIM.1992.752671","url":null,"abstract":"EL2 is an intrinsic, metastable donor defect which is important in making semi-insulating GaAs. Remarkably, even after a decade of intense investigation, the microscopic nature of the defect is still controversial. There are two models which must still be considered seriously, namely that EL2 is the isolated As/sub Ga/ antisite, and that EL2 also contains an arsenic interstitial on the [111] axis. This paper will comment on some of the experiments used to support each of the two models, and will discuss attempts to reconcile the two.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132663495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：