We have used a previously developed improved photo induced current spectroscopy (PICS) technique to scan the optical activation energies of electron and hole traps in 0.15/spl mu/m x 50/spl mu/m gate-area MODFET's based on InP substrate. For comparison purposes we have also examined the traps in a conventional AlGaAs/GaAs MODFET. Measurements with a constant low-drain voltage (/spl les/ 40mV), with and without a pre-pulsed higher drain voltage, are performed to explore the possible presence of traps in the channel and buffer layers. Results of determination of optical and thermal activation energies are presented for comparison.
我们使用先前开发的改进的光感应电流光谱(PICS)技术扫描了基于InP衬底的0.15/spl mu/m x 50/spl mu/m栅极面积MODFET的电子和空穴阱的光学活化能。为了比较，我们还研究了传统AlGaAs/GaAs MODFET中的陷阱。在恒定的低漏极电压(/spl les/ 40mV)下，在有或没有预脉冲的高漏极电压下进行测量，以探索通道和缓冲层中可能存在的陷阱。给出了光学活化能和热活化能的测定结果，以供比较。
{"title":"Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)","authors":"R. Sung, M. B. Das","doi":"10.1109/SIM.1992.752721","DOIUrl":"https://doi.org/10.1109/SIM.1992.752721","url":null,"abstract":"We have used a previously developed improved photo induced current spectroscopy (PICS) technique to scan the optical activation energies of electron and hole traps in 0.15/spl mu/m x 50/spl mu/m gate-area MODFET's based on InP substrate. For comparison purposes we have also examined the traps in a conventional AlGaAs/GaAs MODFET. Measurements with a constant low-drain voltage (/spl les/ 40mV), with and without a pre-pulsed higher drain voltage, are performed to explore the possible presence of traps in the channel and buffer layers. Results of determination of optical and thermal activation energies are presented for comparison.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"688 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122701856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.
{"title":"S.I. InP:Fe Hydride-Vpe for Mushroom Type Lasers","authors":"R. Gobel, H. Janning, H. Burkhard","doi":"10.1109/SIM.1992.752687","DOIUrl":"https://doi.org/10.1109/SIM.1992.752687","url":null,"abstract":"Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121875771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Chengzhou, Zhang Yanwen, Li Guohui, Wang Qi, Wang Wen-xun
SI-GaAs wafers have been implanted with 0.6 /spl I.itilde/ 7.0 MeV /sup 28/ Si /sup +/ ions and processed by rapid thermal annealing. The donor activation rate goes down from 60% to /spl I.itilde/ 20% with an increasing fluence of 1 x 10/sup 13/ /spl I.itilde/ 2 x 10/sup 14/ cm/sup -2/, at high doses it goes up slowly with increasing ion energies. The carrier profile spreads shallower than Si atomic profile. The activation proceeds by the exchange of interstitial Si with substitutional Ga. The poor activation rate results mainly from Si/sub Ga/ - Si/sub As/ pair formation.
{"title":"The activation of MeV Si/sup +/ implants in SI-GaAs","authors":"J. Chengzhou, Zhang Yanwen, Li Guohui, Wang Qi, Wang Wen-xun","doi":"10.1109/SIM.1992.752679","DOIUrl":"https://doi.org/10.1109/SIM.1992.752679","url":null,"abstract":"SI-GaAs wafers have been implanted with 0.6 /spl I.itilde/ 7.0 MeV /sup 28/ Si /sup +/ ions and processed by rapid thermal annealing. The donor activation rate goes down from 60% to /spl I.itilde/ 20% with an increasing fluence of 1 x 10/sup 13/ /spl I.itilde/ 2 x 10/sup 14/ cm/sup -2/, at high doses it goes up slowly with increasing ion energies. The carrier profile spreads shallower than Si atomic profile. The activation proceeds by the exchange of interstitial Si with substitutional Ga. The poor activation rate results mainly from Si/sub Ga/ - Si/sub As/ pair formation.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132672503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.
{"title":"Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs","authors":"T. Benchiguer, B. Marí, C. Schwab, U. Desnica","doi":"10.1109/SIM.1992.752705","DOIUrl":"https://doi.org/10.1109/SIM.1992.752705","url":null,"abstract":"The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132136170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.
{"title":"Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide","authors":"M. Brozel, S. Tuzemen","doi":"10.1109/SIM.1992.752702","DOIUrl":"https://doi.org/10.1109/SIM.1992.752702","url":null,"abstract":"We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124465342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose an analytical model for the frequency-dependent output conductance of GaAs MESFETs on semi-insulating (SI) substrates. Because of deep levels the ac potential profile across the SI region between source and drain is frequency dependent and results in a change with frequency of the ac voltage drop across the channel-substrate interface. This results in a change of the output conductance with frequency. A closed form for the ac potential profile was obtained by solving the continuity equations for holes and electrons plus Poissson's equation under conditions of low-level injection and low frequencies. The model allows an examination of the effect of the density and location of multiple deep levels and reproduces published experimental and numerical results.
{"title":"Analytical model of the frequency-dependent output conductance of GaAs, MESFETs on semi-insulating substrates","authors":"D. Shulman","doi":"10.1109/SIM.1992.752717","DOIUrl":"https://doi.org/10.1109/SIM.1992.752717","url":null,"abstract":"We propose an analytical model for the frequency-dependent output conductance of GaAs MESFETs on semi-insulating (SI) substrates. Because of deep levels the ac potential profile across the SI region between source and drain is frequency dependent and results in a change with frequency of the ac voltage drop across the channel-substrate interface. This results in a change of the output conductance with frequency. A closed form for the ac potential profile was obtained by solving the continuity equations for holes and electrons plus Poissson's equation under conditions of low-level injection and low frequencies. The model allows an examination of the effect of the density and location of multiple deep levels and reproduces published experimental and numerical results.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125266735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The real crystal structure of In/sub 0.52/AI/sub 0.48/As layers grown on InP<001> substrate as a function of the growth temperature (between 150/spl deg/C and 450/spl deg/C) was investigated. Both as-grown and annealed samples (500/spl deg/C) show a high electrical resistivity (10/sup 6-10/sup 7//spl Omega/cm). The following structural /electrical analyses were applied to these samples: transmission electron microscopy (TEM), x-ray diffraction, particle induced x-ray emission (PIXE). In the temperature range between 200/spl deg/C and 450/spl deg/C good crystalline InAlAs layers can be achieved with a low density of dislocations and stacking faults. A generation of precipitates as in the case of LT-GaAs could not be observed. Furthermore, ordering of group-III elements on {111} planes was observed in these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300/spl deg/C additional As (/spl ap/1-2%) is incorporated in the lattice. For layers grown below 200/spl deg/C "pyramidal defects" are formed containing small inclusions of hexagonal As precipitates in the core of these defects.
{"title":"Structure investigations of low-temperature MBE grown InAlAs layers on InP[001] substrate","authors":"P. Werner, Z. Liliental-Weber, K. Yu, E. Weber","doi":"10.1109/SIM.1992.752694","DOIUrl":"https://doi.org/10.1109/SIM.1992.752694","url":null,"abstract":"The real crystal structure of In/sub 0.52/AI/sub 0.48/As layers grown on InP<001> substrate as a function of the growth temperature (between 150/spl deg/C and 450/spl deg/C) was investigated. Both as-grown and annealed samples (500/spl deg/C) show a high electrical resistivity (10/sup 6-10/sup 7//spl Omega/cm). The following structural /electrical analyses were applied to these samples: transmission electron microscopy (TEM), x-ray diffraction, particle induced x-ray emission (PIXE). In the temperature range between 200/spl deg/C and 450/spl deg/C good crystalline InAlAs layers can be achieved with a low density of dislocations and stacking faults. A generation of precipitates as in the case of LT-GaAs could not be observed. Furthermore, ordering of group-III elements on {111} planes was observed in these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300/spl deg/C additional As (/spl ap/1-2%) is incorporated in the lattice. For layers grown below 200/spl deg/C \"pyramidal defects\" are formed containing small inclusions of hexagonal As precipitates in the core of these defects.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133714029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Kawase, T. Wakamiya, S. Fujiwara, K. Hashio, K. Kimura, M. Tatsumi, T. Shirakawa, K. Tada
By using our VCZ (Vapour pressure controlled Czochralski) method, we successfully grew semi-insulating 4 /spl oslash/ GaAs single crystals with very low-dislocation density of less than 5,000cm/sup -2/ which was one order of magnitude less than that of the LEC single crystal. The residual strain of the VCZ substrate was one quarter of that of the LEC substrate. The generation of slip-dislocation on the substrates during MBE (Molecular Beam Epitaxy) growth was significantly improved on the VCZ substrates.
{"title":"Low-dislocation-density 4\" 0 /spl Oslash/ GaAs single crystal growth under arsenic atmosphere","authors":"T. Kawase, T. Wakamiya, S. Fujiwara, K. Hashio, K. Kimura, M. Tatsumi, T. Shirakawa, K. Tada","doi":"10.1109/SIM.1992.752681","DOIUrl":"https://doi.org/10.1109/SIM.1992.752681","url":null,"abstract":"By using our VCZ (Vapour pressure controlled Czochralski) method, we successfully grew semi-insulating 4 /spl oslash/ GaAs single crystals with very low-dislocation density of less than 5,000cm/sup -2/ which was one order of magnitude less than that of the LEC single crystal. The residual strain of the VCZ substrate was one quarter of that of the LEC substrate. The generation of slip-dislocation on the substrates during MBE (Molecular Beam Epitaxy) growth was significantly improved on the VCZ substrates.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125353963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The amplitude dependence of the photoreflectance signal upon intensity of the pumping beam has been measured for SI-GaAs and SI-InP and it is explained by the difference in the surface Fermi level in the two materials. When a pump beam with photon energy less than the bandgap is used in SI-GaAs a simple relationship exists between the amplitude of the photoreflectance signal and the trapped surface charge. The effect of several chemical treatments or of a ZnSe cap layer on the surface trap density in SI-GaAs has been determined.
{"title":"Photoreftectance characterization of LEC-SI GaAs and Fe-InP","authors":"H. Bhimnathwala, J. Borrego","doi":"10.1109/SIM.1992.752713","DOIUrl":"https://doi.org/10.1109/SIM.1992.752713","url":null,"abstract":"The amplitude dependence of the photoreflectance signal upon intensity of the pumping beam has been measured for SI-GaAs and SI-InP and it is explained by the difference in the surface Fermi level in the two materials. When a pump beam with photon energy less than the bandgap is used in SI-GaAs a simple relationship exists between the amplitude of the photoreflectance signal and the trapped surface charge. The effect of several chemical treatments or of a ZnSe cap layer on the surface trap density in SI-GaAs has been determined.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126878814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper considers the substantial progress made in III-V device applications, and offers a retrospective over the life of this conference. It considers the changing priorities, key lessons, and major advances that have brought S-I GaAs to market maturity, and S-I InP to the brink of commercialization. The discussion ranges from electronic and optical devices to examples of system applications, and how they affect the focus of the materials community.
{"title":"Device applications of semi-insulating III-V materials: the changing demand","authors":"P. Jay","doi":"10.1109/SIM.1992.752670","DOIUrl":"https://doi.org/10.1109/SIM.1992.752670","url":null,"abstract":"This paper considers the substantial progress made in III-V device applications, and offers a retrospective over the life of this conference. It considers the changing priorities, key lessons, and major advances that have brought S-I GaAs to market maturity, and S-I InP to the brink of commercialization. The discussion ranges from electronic and optical devices to examples of system applications, and how they affect the focus of the materials community.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121876229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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