The Fe/sup 3+/2+/ acceptor level in p-type and n-type InP crystals was measured under hydrostatic pressure in the isothermal DLTS. A strong pressure dependence of iron peak intensities in both materials as well as nonlinear pressure dependence of emission rates logarithm were observed. These facts prove that both emission rates must be taken into account in spite of the Fermi level position. The pressure coefficients of the iron acceptor energy relatively to the conduction and valence bands were found as 90 meV/GPa and -7 meV/GPa, respectively.
{"title":"Properties of the Fe Acceptor Level in Inp Under Hydrostatic Pressure","authors":"A. Babiński, K. Korona, A. M. Hennel","doi":"10.1109/SIM.1992.752708","DOIUrl":"https://doi.org/10.1109/SIM.1992.752708","url":null,"abstract":"The Fe/sup 3+/2+/ acceptor level in p-type and n-type InP crystals was measured under hydrostatic pressure in the isothermal DLTS. A strong pressure dependence of iron peak intensities in both materials as well as nonlinear pressure dependence of emission rates logarithm were observed. These facts prove that both emission rates must be taken into account in spite of the Fermi level position. The pressure coefficients of the iron acceptor energy relatively to the conduction and valence bands were found as 90 meV/GPa and -7 meV/GPa, respectively.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133799839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of water in the boric oxide encapsulant has been examined based on the carbon and boron concentration results in LEC GaAs crystals and corresponding gas analysis inside the LEC puller during the growth. It has been found that hydrogen concentration increases with increasing the water content in the encapsulant, while carbon monoxide concentration remains constant. It has been concluded that hydrogen in the puller correlates with both carbon and boron contents of the crystal more significantly than carbon monoxide in the puller does.
{"title":"Incorporation/extraction of carbon and boron during semi-insulating LEC GaAs growth: roles of hydrogen and carbon monoxide in the puller atmosphere","authors":"J. Nishio, H. Fujita","doi":"10.1109/SIM.1992.752682","DOIUrl":"https://doi.org/10.1109/SIM.1992.752682","url":null,"abstract":"The effect of water in the boric oxide encapsulant has been examined based on the carbon and boron concentration results in LEC GaAs crystals and corresponding gas analysis inside the LEC puller during the growth. It has been found that hydrogen concentration increases with increasing the water content in the encapsulant, while carbon monoxide concentration remains constant. It has been concluded that hydrogen in the puller correlates with both carbon and boron contents of the crystal more significantly than carbon monoxide in the puller does.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133118465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.
{"title":"Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits","authors":"J. Gual, J. Samitier, J. Morante","doi":"10.1109/SIM.1992.752718","DOIUrl":"https://doi.org/10.1109/SIM.1992.752718","url":null,"abstract":"We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114908378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.
{"title":"Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique","authors":"W. S. Lau, C. H. Goo, T. C. Chong","doi":"10.1109/SIM.1992.752692","DOIUrl":"https://doi.org/10.1109/SIM.1992.752692","url":null,"abstract":"A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114775914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There is a growing need for rapid non-destructive mapping of defects and polishing damage in semi-insulating GaAs wafers used in the efficient manufacture of microwave and millimeter wave monolithic integrated circuits (MMICs). Optical mapping by spatially resolved photoluminescence (SRPL) of whole wafers with high spatial resolution has been demonstrated. Video rate SRPL scans reveal dislocations, arsenic precipitates, and scratch-like defects in GaAs wafers. Considerable variations in defect densities are seen in material from different sources. This paper studies the relationship between wafer level optical maps and device parameters in order to determine the impact of the various defects.
{"title":"Optical wafer level mapping for MMIC processing","authors":"H. Kanber, E. Pan, G. Carver, R.W. Heebner","doi":"10.1109/SIM.1992.752696","DOIUrl":"https://doi.org/10.1109/SIM.1992.752696","url":null,"abstract":"There is a growing need for rapid non-destructive mapping of defects and polishing damage in semi-insulating GaAs wafers used in the efficient manufacture of microwave and millimeter wave monolithic integrated circuits (MMICs). Optical mapping by spatially resolved photoluminescence (SRPL) of whole wafers with high spatial resolution has been demonstrated. Video rate SRPL scans reveal dislocations, arsenic precipitates, and scratch-like defects in GaAs wafers. Considerable variations in defect densities are seen in material from different sources. This paper studies the relationship between wafer level optical maps and device parameters in order to determine the impact of the various defects.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133648662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.
{"title":"NMR characterization of stoichiometry-related point defects in SI-GaAs","authors":"M. Suemitsu, K. Terada, N. Miyamoto","doi":"10.1109/SIM.1992.752715","DOIUrl":"https://doi.org/10.1109/SIM.1992.752715","url":null,"abstract":"Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133981119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Numerical simulations demonstrate that generation in n-SI-n structures gradually modifies the structure electric field distribution.
数值模拟表明，在n-SI-n结构中产生电场会逐渐改变结构电场分布。
{"title":"Numerical simulation of generation in n-SI-n structures","authors":"J. Viallet, G. Picoli, K. Turki","doi":"10.1109/SIM.1992.752719","DOIUrl":"https://doi.org/10.1109/SIM.1992.752719","url":null,"abstract":"Numerical simulations demonstrate that generation in n-SI-n structures gradually modifies the structure electric field distribution.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126363039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Yamada, M. Fukuzawa, N. Kimura, K. Kaminaka, M. Yokogawa
By using a newly-developed computer-controlled infrared polariscope, strain-induced birefringence has been measured to characterize residual strain in thin LEC-grown GaAs [100] wafers. It is found that the residual strain profile exhibit fourfold symmetry and the maximum value attains to the order of 10/sup -5/ /spl sim/ 10/sup -4/. EPD profile has been also measured to explore a correlation between the residual strain and EPD. A model is proposed to explain the correlation between the residual strain and EPD profiles, which is found fairly to explain the present experimental results.
{"title":"Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers","authors":"M. Yamada, M. Fukuzawa, N. Kimura, K. Kaminaka, M. Yokogawa","doi":"10.1109/SIM.1992.752700","DOIUrl":"https://doi.org/10.1109/SIM.1992.752700","url":null,"abstract":"By using a newly-developed computer-controlled infrared polariscope, strain-induced birefringence has been measured to characterize residual strain in thin LEC-grown GaAs [100] wafers. It is found that the residual strain profile exhibit fourfold symmetry and the maximum value attains to the order of 10/sup -5/ /spl sim/ 10/sup -4/. EPD profile has been also measured to explore a correlation between the residual strain and EPD. A model is proposed to explain the correlation between the residual strain and EPD profiles, which is found fairly to explain the present experimental results.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128717367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The salient features of Hydride Vapour Phase Epitaxial growth of semi insulating InP:Fe on non-planar surfaces such as high growth rate, selectivity, planarity and growth behaviour insensitive either to the mesa dimension or orientation have been demonstrated. We have also exemplified its usefulness by fabricating high speed GaInAsP/InP lasers exhibiting a 3dB frequency exceeding 14 GHz.
{"title":"Hydride vapour phase epitaxial regrowth of SI-InP: Fe on non-planar surfaces for device fabrication","authors":"S. Lourdudoss, O. Kjebon","doi":"10.1109/SIM.1992.752688","DOIUrl":"https://doi.org/10.1109/SIM.1992.752688","url":null,"abstract":"The salient features of Hydride Vapour Phase Epitaxial growth of semi insulating InP:Fe on non-planar surfaces such as high growth rate, selectivity, planarity and growth behaviour insensitive either to the mesa dimension or orientation have been demonstrated. We have also exemplified its usefulness by fabricating high speed GaInAsP/InP lasers exhibiting a 3dB frequency exceeding 14 GHz.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127698375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Šantić, U. Desnica, N. Radic, D. Desnica, M Tomislav Pavlovic
Photoconductivity transients in semi-insulating (SI) GaAs during illumination with low intensity light are studied. By an original usage of thermally stimulated current method, the photoconductivity transient is related to the process of filling of deep traps with charge carriers. A simple model is proposed which explains the observed phenomena. It is also possible to estimate the capture cross section for dominant traps. Contrary to some previous explanations, the metastability of EL2 or other defects is not supposed. It is shown that deep levels, other than EL2, can play the dominant roles in low temperature transient phenomena. Both, the methodology and the model can be used in study of other SI semiconductors. In appendix, the possibility of large concentration of traps ( >N/sub EL2/) is discussed.
{"title":"The role of deep traps in photoconductivity transients in SI GaAs","authors":"B. Šantić, U. Desnica, N. Radic, D. Desnica, M Tomislav Pavlovic","doi":"10.1109/SIM.1992.752706","DOIUrl":"https://doi.org/10.1109/SIM.1992.752706","url":null,"abstract":"Photoconductivity transients in semi-insulating (SI) GaAs during illumination with low intensity light are studied. By an original usage of thermally stimulated current method, the photoconductivity transient is related to the process of filling of deep traps with charge carriers. A simple model is proposed which explains the observed phenomena. It is also possible to estimate the capture cross section for dominant traps. Contrary to some previous explanations, the metastability of EL2 or other defects is not supposed. It is shown that deep levels, other than EL2, can play the dominant roles in low temperature transient phenomena. Both, the methodology and the model can be used in study of other SI semiconductors. In appendix, the possibility of large concentration of traps ( >N/sub EL2/) is discussed.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121337593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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