Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650939
S. Bellucci, P. Onorato, Y. Shunin, Y. Zhukovskii, N. Burlutskaya
Based on a model with singular attractive potential of equidistant conductive cylinders, we illustrate an approach to calculate the electron spectrum of metallic multiwall carbon nanotubes (MW CNT) with an arbitrary number of coaxial layers. We compute the number of electrically active channels, Nch, in the ideal case when all MW CNT shells are contacted to the electrodes, starting from the one-electron spectrum. The dependence of Nch on the temperature and on both the innermost and outermost shells radii allows us to discuss the potential performances of MW CNT interconnects, affecting the power dissipation of integrated circuits. Our description improves over the isolated shells model, where band structures remain unaffected from each other. It turns out that, for a small innermost radius MW CNT, when all the shell are contacted to the electrodes, the presence of a geometrical potential can be quite relevant. At the same time, we prove the relevance of the inter-shell in determining Nch, for an outermost shell having hundreds of nanometers radius. We then turn our attention to the junctions of carbon nanotubes with contacting metallic elements of a nanocircuit, carrying out numerical simulations on the contacts resistance, using multiple scattering theory and the effective media cluster approach. Calculations for different multiwalled nanotube-metal contacts yield quantitatively realistic results, from several to hundreds kOhm, depending on nanotube chirality, diameter and thickness. As an indicator of possible ‘radial current’ losses the inter-wall transparency coefficient for MW CNT has been also simulated.
{"title":"Multiwall carbon-nanotube interconnects: radial effects on physical models and resistance calculations for various metal substrates","authors":"S. Bellucci, P. Onorato, Y. Shunin, Y. Zhukovskii, N. Burlutskaya","doi":"10.1109/SMICND.2010.5650939","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650939","url":null,"abstract":"Based on a model with singular attractive potential of equidistant conductive cylinders, we illustrate an approach to calculate the electron spectrum of metallic multiwall carbon nanotubes (MW CNT) with an arbitrary number of coaxial layers. We compute the number of electrically active channels, Nch, in the ideal case when all MW CNT shells are contacted to the electrodes, starting from the one-electron spectrum. The dependence of Nch on the temperature and on both the innermost and outermost shells radii allows us to discuss the potential performances of MW CNT interconnects, affecting the power dissipation of integrated circuits. Our description improves over the isolated shells model, where band structures remain unaffected from each other. It turns out that, for a small innermost radius MW CNT, when all the shell are contacted to the electrodes, the presence of a geometrical potential can be quite relevant. At the same time, we prove the relevance of the inter-shell in determining Nch, for an outermost shell having hundreds of nanometers radius. We then turn our attention to the junctions of carbon nanotubes with contacting metallic elements of a nanocircuit, carrying out numerical simulations on the contacts resistance, using multiple scattering theory and the effective media cluster approach. Calculations for different multiwalled nanotube-metal contacts yield quantitatively realistic results, from several to hundreds kOhm, depending on nanotube chirality, diameter and thickness. As an indicator of possible ‘radial current’ losses the inter-wall transparency coefficient for MW CNT has been also simulated.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124796274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650706
R. Malmqvist, C. Samuelsson, D. Smith, T. Vaha-Heikkila, R. Baggen
In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here.
{"title":"Switched LNAs using GaAs MMIC based RF MEMS switches","authors":"R. Malmqvist, C. Samuelsson, D. Smith, T. Vaha-Heikkila, R. Baggen","doi":"10.1109/SMICND.2010.5650706","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650706","url":null,"abstract":"In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124469508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650718
C. Miclea, T. Tanasoiu, C. Miclea, L. Amarande, M. Cioangher, L. Trupina, A. Iuga, I. Spanulescu, C. Miclea, C. David, M. Susu
The application area of piezoceramic materials and devices based on such materials is continuously extended. The working conditions for such devices and structures may be sometimes very hard such as low and high temperatures, nuclear radiation, high pressure and so on. Such conditions may affect to some extent the transducer performances due to the changes of the basic properties of piezoceramic materials used as sensors. In this regard we have investigated the changes of the main piezoelectric properties of two typically hard and soft piezoceramics within a large temperature range from 2 to 600 K. All parameters measured showed a rather steady increase or decrease with increasing temperature. The results were discussed in terms of intrinsic and domain wall contribution to the dielectric and piezoelectric response of materials.
{"title":"Behavior of the main propeties of hard and soft type piezoceramics with temperature from 2 to 600 K","authors":"C. Miclea, T. Tanasoiu, C. Miclea, L. Amarande, M. Cioangher, L. Trupina, A. Iuga, I. Spanulescu, C. Miclea, C. David, M. Susu","doi":"10.1109/SMICND.2010.5650718","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650718","url":null,"abstract":"The application area of piezoceramic materials and devices based on such materials is continuously extended. The working conditions for such devices and structures may be sometimes very hard such as low and high temperatures, nuclear radiation, high pressure and so on. Such conditions may affect to some extent the transducer performances due to the changes of the basic properties of piezoceramic materials used as sensors. In this regard we have investigated the changes of the main piezoelectric properties of two typically hard and soft piezoceramics within a large temperature range from 2 to 600 K. All parameters measured showed a rather steady increase or decrease with increasing temperature. The results were discussed in terms of intrinsic and domain wall contribution to the dielectric and piezoelectric response of materials.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131029732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649088
R. Diduszko, E. Czerwosz, E. Kowalska, M. Kozłowski, R. Nietubyć, F. Craciunoiu, M. Danila
In this paper we present results of SEM, XRD and EXAFS studies of palladium-carbon nanostructural films prepared in two-steps method on pure and oxidized silicon substrates. Structural, topographical and morphological differences were found between films deposited on those substrates.
{"title":"Pd-C film growN ON SiO2/Si and Si substrates","authors":"R. Diduszko, E. Czerwosz, E. Kowalska, M. Kozłowski, R. Nietubyć, F. Craciunoiu, M. Danila","doi":"10.1109/SMICND.2010.5649088","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649088","url":null,"abstract":"In this paper we present results of SEM, XRD and EXAFS studies of palladium-carbon nanostructural films prepared in two-steps method on pure and oxidized silicon substrates. Structural, topographical and morphological differences were found between films deposited on those substrates.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"76 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134288925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650533
I. Cristea, A. Danchiv
This paper presents a supply concept for a two channel low side switch. The circuit is supplied from the input pins, each input supplying the corresponding channel. The topology presented in this paper selects the highest input voltage to supply common blocks. Simulations are used to observe the behavior of the switch.
{"title":"Supply concept in input powered two channel switch","authors":"I. Cristea, A. Danchiv","doi":"10.1109/SMICND.2010.5650533","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650533","url":null,"abstract":"This paper presents a supply concept for a two channel low side switch. The circuit is supplied from the input pins, each input supplying the corresponding channel. The topology presented in this paper selects the highest input voltage to supply common blocks. Simulations are used to observe the behavior of the switch.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115087179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650386
V. Sergentu, D. Esinenco, L. Sirbu, I. Voda, R. Voicu, I. Tiginyanu, V. Ursaki
It is shown experimentally and theoretically that electromagnetic interaction of a nanoparticle with a flat dielectric surface leads to occurrence of an additional peak in the spectrum of Rayleigh scattering which is due to the contribution from quadrupole components in addition to the dipole ones. The experiments were performed for silver nanoparticles placed on a GaP surface as well as inside a GaP porous template. The theoretical considerations are based on the Drude model of electromagnetic properties of a metal.
{"title":"Rayleigh scattering of a metal nanoparticle on a flat dielectric surface","authors":"V. Sergentu, D. Esinenco, L. Sirbu, I. Voda, R. Voicu, I. Tiginyanu, V. Ursaki","doi":"10.1109/SMICND.2010.5650386","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650386","url":null,"abstract":"It is shown experimentally and theoretically that electromagnetic interaction of a nanoparticle with a flat dielectric surface leads to occurrence of an additional peak in the spectrum of Rayleigh scattering which is due to the contribution from quadrupole components in addition to the dipole ones. The experiments were performed for silver nanoparticles placed on a GaP surface as well as inside a GaP porous template. The theoretical considerations are based on the Drude model of electromagnetic properties of a metal.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134378957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650902
L. Baggen, S. Vaccaro, D. Llorens del Río, G. Langgartner
This article presents an overview of challenges encountered when developing a cost-effective compact steerable antenna array for Ku-band. Especially the problem of integration of RF-components will be addressed. This array is being developed within the NATALIA project (ESA-funded, ARTES 5), is a fully electronically steerable antenna, and dedicated to land mobile satellite terminals. The major drawback of such arrays is the vast number of RF-components required for the design, making a price-effective and compact solution highly difficult. Different RF-topologies have been investigated and a dedicated MMIC design was part of the design process. This MMIC will also be presented and measurements of a first prototype will be discussed. The possibilities of MEMS switches will also be addressed.
{"title":"Compact phased arrays for mobile terminals","authors":"L. Baggen, S. Vaccaro, D. Llorens del Río, G. Langgartner","doi":"10.1109/SMICND.2010.5650902","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650902","url":null,"abstract":"This article presents an overview of challenges encountered when developing a cost-effective compact steerable antenna array for Ku-band. Especially the problem of integration of RF-components will be addressed. This array is being developed within the NATALIA project (ESA-funded, ARTES 5), is a fully electronically steerable antenna, and dedicated to land mobile satellite terminals. The major drawback of such arrays is the vast number of RF-components required for the design, making a price-effective and compact solution highly difficult. Different RF-topologies have been investigated and a dedicated MMIC design was part of the design process. This MMIC will also be presented and measurements of a first prototype will be discussed. The possibilities of MEMS switches will also be addressed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133248225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650650
S. Vlad, C. Ciobanu, D. Macocinschi, D. Filip, M. Butnaru, L. Grădinaru, A. Nistor
In this study the electrospinning technique was used to prepare biocompatible polyurethane membranes. The polyurethane for preparation of nanofibers was synthesized from hexamethylenediisocyanate (HDI), polytetramethylene ether glycol (PTMEG) and butanediol (BD) filled with different proportion of hydroxypropyl cellulose (HPC), by polyaddition in dimethylformamide (DMF) as solvent. Molar ratio of Polyether: Diisocyanate: Glycol of 1∶4∶3, gives a concentration of urethane groups about of 3×10−3 mole/g. The structure of polymers was confirmed by FT-IR analysis. The morphological structure was analyzed by SEM method. TGA and DSC were used for thermal characterization. Contact angles measurements in connection with the study for biological behaviour was performed.
{"title":"Polyurethane nanofibers by electrospinning for biomedical applications","authors":"S. Vlad, C. Ciobanu, D. Macocinschi, D. Filip, M. Butnaru, L. Grădinaru, A. Nistor","doi":"10.1109/SMICND.2010.5650650","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650650","url":null,"abstract":"In this study the electrospinning technique was used to prepare biocompatible polyurethane membranes. The polyurethane for preparation of nanofibers was synthesized from hexamethylenediisocyanate (HDI), polytetramethylene ether glycol (PTMEG) and butanediol (BD) filled with different proportion of hydroxypropyl cellulose (HPC), by polyaddition in dimethylformamide (DMF) as solvent. Molar ratio of Polyether: Diisocyanate: Glycol of 1∶4∶3, gives a concentration of urethane groups about of 3×10−3 mole/g. The structure of polymers was confirmed by FT-IR analysis. The morphological structure was analyzed by SEM method. TGA and DSC were used for thermal characterization. Contact angles measurements in connection with the study for biological behaviour was performed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130555289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650439
A. Negut, A. Manolescu
The ability to trim the value of a chosen parameter is a usefull feature that allows both range setting and yield improvement with minimum production costs. The present paper targets the programmability of current mirrors and current sources. The chosen approach is the implementation of Floating Gate (FG) devices which allow a large trim range.
{"title":"Analog Floating Gate approach for programmable current mirrors and current sources","authors":"A. Negut, A. Manolescu","doi":"10.1109/SMICND.2010.5650439","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650439","url":null,"abstract":"The ability to trim the value of a chosen parameter is a usefull feature that allows both range setting and yield improvement with minimum production costs. The present paper targets the programmability of current mirrors and current sources. The chosen approach is the implementation of Floating Gate (FG) devices which allow a large trim range.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132378838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650643
R. Plugaru, N. Plugaru, S. Mihaiu, E. Vasile
Multi-layered Al:ZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at. % Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases when the number of layers increases, to reach a value of 3.70 (Ω·m)−1 for a ten layer film. Results obtained by total energy first principles calculations performed on systems with chemical disorder are discussed in relationship with experimental data to account for the effect of Al on the conductivity.
{"title":"On the electrical conductivity in Al:ZnO layers; experimental investigation and a theoretical approach","authors":"R. Plugaru, N. Plugaru, S. Mihaiu, E. Vasile","doi":"10.1109/SMICND.2010.5650643","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650643","url":null,"abstract":"Multi-layered Al:ZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at. % Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases when the number of layers increases, to reach a value of 3.70 (Ω·m)−1 for a ten layer film. Results obtained by total energy first principles calculations performed on systems with chemical disorder are discussed in relationship with experimental data to account for the effect of Al on the conductivity.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128007942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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