Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649034
M. Dumitrescu, J. Telkkala, J. Karinen, A. Laakso, J. Viheriälä, T. Leinonen, J. Lyytikäinen, L. Toikkanen, M. Pessa
The paper presents the modelling and design particularities of laterally-coupled distributed feedback lasers (LC-DFB), the fabrication process, involving a highly productive and cost-effective UV-nanoimprint lithography technique, and the characteristics obtained up to now for the LC-DFB lasers fabricated for pumping Cesium atomic clocks. 550 µm long LC-DFB lasers, emitting at 894 µm, had 10 mA threshold currents and maintained over 40dB side-mode-suppression-ratio between 10 and 100°C. The measured self-homodyne spectrum indicated a linewidth below 1.3 MHz for AR/HR-coated 1000 µm long LC-DFB lasers and the simulations indicate that the use of phase-shift sections could reduce the linewidth below 250 kHz.
{"title":"Narrow linewidth 894 nm distributed feedback lasers with laterally-coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography","authors":"M. Dumitrescu, J. Telkkala, J. Karinen, A. Laakso, J. Viheriälä, T. Leinonen, J. Lyytikäinen, L. Toikkanen, M. Pessa","doi":"10.1109/SMICND.2010.5649034","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649034","url":null,"abstract":"The paper presents the modelling and design particularities of laterally-coupled distributed feedback lasers (LC-DFB), the fabrication process, involving a highly productive and cost-effective UV-nanoimprint lithography technique, and the characteristics obtained up to now for the LC-DFB lasers fabricated for pumping Cesium atomic clocks. 550 µm long LC-DFB lasers, emitting at 894 µm, had 10 mA threshold currents and maintained over 40dB side-mode-suppression-ratio between 10 and 100°C. The measured self-homodyne spectrum indicated a linewidth below 1.3 MHz for AR/HR-coated 1000 µm long LC-DFB lasers and the simulations indicate that the use of phase-shift sections could reduce the linewidth below 250 kHz.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"337 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122844400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650502
F. Babarada, C. Ravariu, A. Bajenaru, E. Manea
This paper presents the TCAD techniques used for the simulation, optimisation and design of the BioFET device parameters, using a specialised software package, ATLAS. The values of these parameters will prescribe the process fabrication and device size. Using EDA tools like LEDIT, the layers that will constitute the fabrication masks for both active and reference devices will be established, as a first novelty of this paper. A biodevice description in Atlas program, including an enzyme within the gate space, represents a second original approach. Besides to the simulations and mask design, the paper exposes some comparative experimental results concerning a nanostructured material, suitable for the enzyme entrapping.
{"title":"From simulations to masks for a BioFET design","authors":"F. Babarada, C. Ravariu, A. Bajenaru, E. Manea","doi":"10.1109/SMICND.2010.5650502","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650502","url":null,"abstract":"This paper presents the TCAD techniques used for the simulation, optimisation and design of the BioFET device parameters, using a specialised software package, ATLAS. The values of these parameters will prescribe the process fabrication and device size. Using EDA tools like LEDIT, the layers that will constitute the fabrication masks for both active and reference devices will be established, as a first novelty of this paper. A biodevice description in Atlas program, including an enzyme within the gate space, represents a second original approach. Besides to the simulations and mask design, the paper exposes some comparative experimental results concerning a nanostructured material, suitable for the enzyme entrapping.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131567010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650214
A. Monmayrant, A. Larrue, J. Campos, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy
By harnessing the potential of photonic crystal waveguide, we have developed inherently single-mode DFB lasers that can be integrated in arrays. We propose and demonstrate two methods (affine deformation and double deformation) for fine optimization and control of both the emission wavelength and the mode discrimination of such lasers. Integrated arrays of single-mode DFB lasers on membrane emitting around 990 nm with wavelength spacing under 0.2 nm are experimentally reported. Theoretical Q factor above 6.105 are obtained. Using double deformation, laser emission characteristics and performances remain unchanged under optical feedback above 10%.
{"title":"Photonic crystals for planar laser sources: New functionalities and outlook","authors":"A. Monmayrant, A. Larrue, J. Campos, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy","doi":"10.1109/SMICND.2010.5650214","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650214","url":null,"abstract":"By harnessing the potential of photonic crystal waveguide, we have developed inherently single-mode DFB lasers that can be integrated in arrays. We propose and demonstrate two methods (affine deformation and double deformation) for fine optimization and control of both the emission wavelength and the mode discrimination of such lasers. Integrated arrays of single-mode DFB lasers on membrane emitting around 990 nm with wavelength spacing under 0.2 nm are experimentally reported. Theoretical Q factor above 6.105 are obtained. Using double deformation, laser emission characteristics and performances remain unchanged under optical feedback above 10%.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132011573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650236
V. Popescu, G. Popescu, E. Indrea, D. Silipas, R. Suciu
Nanostructured multilayered Fe2O3 films have been deposited onto commercial glass slides by spray pyrolysis using FeCl3 solution and nitrogen as carrier gas. The influences of thermal treatment and of the number of layers on the optical properties of the films have been studied. Structural investigations on the films were performed using X-ray diffraction.
{"title":"Optical properties of Fe2O3 films obtained by spray pyrolysis","authors":"V. Popescu, G. Popescu, E. Indrea, D. Silipas, R. Suciu","doi":"10.1109/SMICND.2010.5650236","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650236","url":null,"abstract":"Nanostructured multilayered Fe2O3 films have been deposited onto commercial glass slides by spray pyrolysis using FeCl3 solution and nitrogen as carrier gas. The influences of thermal treatment and of the number of layers on the optical properties of the films have been studied. Structural investigations on the films were performed using X-ray diffraction.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125589030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650562
N. Pilgrim, A. Khalid, C. Li, G. Dunn, D. Cumming
Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with the number of stacks. The presence of additional current-limiting mechanisms, such as inactive stacks, are implied if considering the higher currents produced by un-scaled designs or scaled devices at below peak temperatures.
{"title":"Vertical scaling of multi-stack Planar Gunn diodes","authors":"N. Pilgrim, A. Khalid, C. Li, G. Dunn, D. Cumming","doi":"10.1109/SMICND.2010.5650562","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650562","url":null,"abstract":"Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with the number of stacks. The presence of additional current-limiting mechanisms, such as inactive stacks, are implied if considering the higher currents produced by un-scaled designs or scaled devices at below peak temperatures.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125653490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650648
I. Vasiliev, M S Iovu, E. Colomeiko
The photocapacitance relaxation of GexAsxSe1−2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).
{"title":"Photocapacitance relaxation and rigidity transition in GexAsxSe1−2x amorphous films","authors":"I. Vasiliev, M S Iovu, E. Colomeiko","doi":"10.1109/SMICND.2010.5650648","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650648","url":null,"abstract":"The photocapacitance relaxation of GexAsxSe1−2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25 and 0.30. Compositional dependencies of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and another - near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128150263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650593
V. Sundaramoorthy, I. Nistor
In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14mΩcm2 has a high power figure of merit of 274 MW/cm2.
{"title":"Design of quasi-vertical GaN high power Schottky diodes based on field plate termination","authors":"V. Sundaramoorthy, I. Nistor","doi":"10.1109/SMICND.2010.5650593","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650593","url":null,"abstract":"In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14mΩcm2 has a high power figure of merit of 274 MW/cm2.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114497669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650647
M. Avram, A. Avram, A. Bragaru, Bangtao Chen, D. Poenar, C. Iliescu
We present a characterization of PECVD (plasma-enhanced chemical vapour deposition) amorphous silicon carbide films for MEMS/BioMEMS applications. For this applications a high deposition rate and a controllable value of the residual stress is required. The influence of the main parameters is analyzed. Due to annealing effect, the temperature can decrease the compressive value of the stress. The RF frequency mode presents a major influence on residual stress: in low frequency mode a relatively high compressive stress is achieved due to ion bombardment and, as a result, densification of the layer achieved. The PECVD amorphous silicon carbide layers presents a low etching rate in alkaline solutions (around 13 A/min in KOH 30% at 80°C) while in HF 49% the layer is practically inert. Amorphous silicon carbide can be used as masking layer for dry etching in XeF2 reactors (etching rate of 7 A/min). Finally, applications of PECVD amorphous silicon carbide layers for MEMS/BioMEMS applications are presented.
我们提出了用于MEMS/BioMEMS应用的PECVD(等离子体增强化学气相沉积)非晶碳化硅薄膜的表征。对于这种应用，需要较高的沉积速率和可控制的残余应力值。分析了主要参数的影响。由于退火效应，温度可以降低应力的压缩值。射频频率模式对残余应力有主要影响:在低频模式下，由于离子轰击，获得了相对较高的压应力，因此实现了层的致密化。PECVD非晶碳化硅层在碱性溶液中表现出较低的蚀刻速率(在80°C下，KOH为30%时，蚀刻速率约为13 a /min)，而在HF为49%时，该层几乎是惰性的。非晶碳化硅可用作掩蔽层，在XeF2反应器中干式蚀刻(蚀刻速率为7 A/min)。最后，介绍了PECVD非晶碳化硅层在MEMS/BioMEMS中的应用。
{"title":"Low stress PECVD amorphous silicon carbide for MEMS applications","authors":"M. Avram, A. Avram, A. Bragaru, Bangtao Chen, D. Poenar, C. Iliescu","doi":"10.1109/SMICND.2010.5650647","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650647","url":null,"abstract":"We present a characterization of PECVD (plasma-enhanced chemical vapour deposition) amorphous silicon carbide films for MEMS/BioMEMS applications. For this applications a high deposition rate and a controllable value of the residual stress is required. The influence of the main parameters is analyzed. Due to annealing effect, the temperature can decrease the compressive value of the stress. The RF frequency mode presents a major influence on residual stress: in low frequency mode a relatively high compressive stress is achieved due to ion bombardment and, as a result, densification of the layer achieved. The PECVD amorphous silicon carbide layers presents a low etching rate in alkaline solutions (around 13 A/min in KOH 30% at 80°C) while in HF 49% the layer is practically inert. Amorphous silicon carbide can be used as masking layer for dry etching in XeF2 reactors (etching rate of 7 A/min). Finally, applications of PECVD amorphous silicon carbide layers for MEMS/BioMEMS applications are presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129817203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649052
C. Baum, C. Brecher, C. Wenzel, F. Niehaus, K. Rinko
Backlight units are the most relevant element in display with respect to the energy consumption. In addition, the quality of backlight units in terms of brightness, homogenous light distribution, and the angle of light radiation, dramatically influence the overall quality of a display. Within this paper a new approach for the production of complex micro optics on large surfaces is presented. The technology is being optimised within the FlexPAET project for the production of next generation backlight units which allow for more efficient display illumination.
{"title":"Production of next generation backlight units by adaptive step and repeat embossing","authors":"C. Baum, C. Brecher, C. Wenzel, F. Niehaus, K. Rinko","doi":"10.1109/SMICND.2010.5649052","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649052","url":null,"abstract":"Backlight units are the most relevant element in display with respect to the energy consumption. In addition, the quality of backlight units in terms of brightness, homogenous light distribution, and the angle of light radiation, dramatically influence the overall quality of a display. Within this paper a new approach for the production of complex micro optics on large surfaces is presented. The technology is being optimised within the FlexPAET project for the production of next generation backlight units which allow for more efficient display illumination.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127504558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650594
S. Bellone, F. D. Della Corte, L. Di Benedetto, Loredana Freda Albanese, G. Licciardo
A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.
{"title":"A self-consistent model of the static and switching behaviour of 4H-SiC diodes","authors":"S. Bellone, F. D. Della Corte, L. Di Benedetto, Loredana Freda Albanese, G. Licciardo","doi":"10.1109/SMICND.2010.5650594","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650594","url":null,"abstract":"A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127716429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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