Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650460
M. Damaceanu, R. Rusu, M. Olaru, M. Brumǎ
Thin films made from fluorinated poly(naphthyl-imide)s containing oxadiazole rings were irradiated with UV-laser of various fluences and their morphology before and after laser ablation was investigated by using various spectroscopy techniques such as FTIR, atom force, and time-resolved emission spectroscopy.
{"title":"Laser ablation of polyimide thin films","authors":"M. Damaceanu, R. Rusu, M. Olaru, M. Brumǎ","doi":"10.1109/SMICND.2010.5650460","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650460","url":null,"abstract":"Thin films made from fluorinated poly(naphthyl-imide)s containing oxadiazole rings were irradiated with UV-laser of various fluences and their morphology before and after laser ablation was investigated by using various spectroscopy techniques such as FTIR, atom force, and time-resolved emission spectroscopy.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125464088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650479
G. Pristavu, A. Vasilica, M. Apostolescu, G. Brezeanu
This paper describes the architecture of a fully integrated oscillator in CMOS technology, emphasizing the need for a simple design in order to achieve desired performances. The effect of parasitic transitions is investigated and eliminated.
{"title":"Fully-integrated oscillator in CMOS technology","authors":"G. Pristavu, A. Vasilica, M. Apostolescu, G. Brezeanu","doi":"10.1109/SMICND.2010.5650479","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650479","url":null,"abstract":"This paper describes the architecture of a fully integrated oscillator in CMOS technology, emphasizing the need for a simple design in order to achieve desired performances. The effect of parasitic transitions is investigated and eliminated.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126559734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650494
M. Volmer, M. Avram, A. Avram
We performed micromagnetic simulations regarding the detection of magnetic microbeads using a planar Hall effect sensor. The interactions between the magnetic particles and the sensor have been considered in order to simulate the behaviour of these systems. Our results show a high dependence of the sensor response on magnetic beads position. In order to have a linear response, a setup for magnetic biasing the sensor is proposed.
{"title":"Using a planar hall effect sensor for single bead detection","authors":"M. Volmer, M. Avram, A. Avram","doi":"10.1109/SMICND.2010.5650494","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650494","url":null,"abstract":"We performed micromagnetic simulations regarding the detection of magnetic microbeads using a planar Hall effect sensor. The interactions between the magnetic particles and the sensor have been considered in order to simulate the behaviour of these systems. Our results show a high dependence of the sensor response on magnetic beads position. In order to have a linear response, a setup for magnetic biasing the sensor is proposed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122003225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650620
S. Shishiyanu, T. Shishiyanu
The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2 – 1.2µm have been obtained by RPD at 600–950°C for 6 – 60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RP-enhanced diffusion at low (N0<4×1019cm−3) and high (N0>1×1020cm−3) concentrations of Zn in GaAs were analysed. The activation energy of RP- diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1–2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results.
{"title":"Impact of light quantum in Rapid Photothermal Diffusion of Zn IN GaAs","authors":"S. Shishiyanu, T. Shishiyanu","doi":"10.1109/SMICND.2010.5650620","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650620","url":null,"abstract":"The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2 – 1.2µm have been obtained by RPD at 600–950°C for 6 – 60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RP-enhanced diffusion at low (N<inf>0</inf><4×10<sup>19</sup>cm<sup>−3</sup>) and high (N<inf>0</inf>>1×10<sup>20</sup>cm<sup>−</sup>3) concentrations of Zn in GaAs were analysed. The activation energy of RP- diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1–2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124094006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650923
I. Ionica, A. El Hajj Diab, Y. Bae, X. Mescot, A. Ohata, F. Allibert, S. Cristoloveanu
Silicon-on-Insulator wafers with two probe contacts on the top silicon film act as MOS transistors. This configuration called pseudo-MOSFET is largely used for characterization of material parameters such as mobility of carriers and interface quality. Thinner films or oxides induce stronger electrostatic coupling of surface and interface with the channel. We discuss new developments in the pseudo-MOSFET measurement related to the influence of these phenomena as well as the quality of the contacts on the film. Moreover the pseudo-MOS transistor proves to be highly sensitive to its free surface which opens the road to applications in the sensing field.
{"title":"Advances in the pseudo-MOSFET characterization method","authors":"I. Ionica, A. El Hajj Diab, Y. Bae, X. Mescot, A. Ohata, F. Allibert, S. Cristoloveanu","doi":"10.1109/SMICND.2010.5650923","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650923","url":null,"abstract":"Silicon-on-Insulator wafers with two probe contacts on the top silicon film act as MOS transistors. This configuration called pseudo-MOSFET is largely used for characterization of material parameters such as mobility of carriers and interface quality. Thinner films or oxides induce stronger electrostatic coupling of surface and interface with the channel. We discuss new developments in the pseudo-MOSFET measurement related to the influence of these phenomena as well as the quality of the contacts on the film. Moreover the pseudo-MOS transistor proves to be highly sensitive to its free surface which opens the road to applications in the sensing field.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128038122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650722
M. Alexandru, E. Hamciuc, A. Nistor, V. Musteata, M. Cazacu
Polysiloxanes with pendant aminopropyl groups were reacted with 4,4'-oxydiphthalic anhydride (ODPA), when crosslinking occured by formation of the bisimide bridges. The samples have been investigated by FTIR spectroscopy, thermogravimetric analysis, dynamic vapor sorption, and dielectric spectroscopy
{"title":"Polysiloxanes crosslinked by bisimide bridges","authors":"M. Alexandru, E. Hamciuc, A. Nistor, V. Musteata, M. Cazacu","doi":"10.1109/SMICND.2010.5650722","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650722","url":null,"abstract":"Polysiloxanes with pendant aminopropyl groups were reacted with 4,4'-oxydiphthalic anhydride (ODPA), when crosslinking occured by formation of the bisimide bridges. The samples have been investigated by FTIR spectroscopy, thermogravimetric analysis, dynamic vapor sorption, and dielectric spectroscopy","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125634532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650552
A. Rusu, C. Ravariu, A. Rusu, D. Dobrescu, D. Cozma
This paper presents the simulation results of the gate-controlled diode, working in the analog regime. The aim of the paper is to find the device macromodel that provides an optimum linearity of the junction voltage versus the gate voltage, at a given current. The lateral pn junction is simulated in the breakdown regime and the gate voltage biases the MOS capacitor in deep depletion. Finally, linearity under 1% was accomplished, being in agreement with the theory. An equivalent circuit was developed according to these simulations in order to be implemented in Spice like programs.
{"title":"Macromodel established by simulations for the analog regime of the avalanche gate-controlled diode","authors":"A. Rusu, C. Ravariu, A. Rusu, D. Dobrescu, D. Cozma","doi":"10.1109/SMICND.2010.5650552","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650552","url":null,"abstract":"This paper presents the simulation results of the gate-controlled diode, working in the analog regime. The aim of the paper is to find the device macromodel that provides an optimum linearity of the junction voltage versus the gate voltage, at a given current. The lateral pn junction is simulated in the breakdown regime and the gate voltage biases the MOS capacitor in deep depletion. Finally, linearity under 1% was accomplished, being in agreement with the theory. An equivalent circuit was developed according to these simulations in order to be implemented in Spice like programs.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126471741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650451
N. Maticiuc, T. Potlog, N. Spalatu
Highly transparent cadmium sulphide thin films were fabricated at relatively low temperatures by employing the close space sublimation technique. The maximum optical transmittance in the visible region for CdS layer with the ∼ 0.48 µm thickness reached 80%. The optical band gap varies slowly with thickness in the range of 2.42 –2.44 eV. The lowest direct absorption edge produces a reflection peak at 2.42 or 2.43 eV at room temperature depending on the thicknesses. We report curves for refractive, extinction coefficients and optical conductivity for CdS with different thicknesses.
{"title":"Optical properties of CdS thin films deposited by close space sublimation","authors":"N. Maticiuc, T. Potlog, N. Spalatu","doi":"10.1109/SMICND.2010.5650451","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650451","url":null,"abstract":"Highly transparent cadmium sulphide thin films were fabricated at relatively low temperatures by employing the close space sublimation technique. The maximum optical transmittance in the visible region for CdS layer with the ∼ 0.48 µm thickness reached 80%. The optical band gap varies slowly with thickness in the range of 2.42 –2.44 eV. The lowest direct absorption edge produces a reflection peak at 2.42 or 2.43 eV at room temperature depending on the thicknesses. We report curves for refractive, extinction coefficients and optical conductivity for CdS with different thicknesses.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"1050 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131858046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650505
R. Cojan, Cristian Murtaza
In this paper a Low Noise Amplifier suitable for usage in FM-Radio receivers in a standard 60 nm RF process is presented. The LNA is designed to be used without a matching network in order to minimize the PCB cost, which means that the input impedance is in accordance with the antenna impedance. The LNA has a total gain of 27 dB, programmable in 1 dB-step, in the FM-Radio bandwidth. The noise figure of the LNA is 2 dB, its P1dB is −27 dBm and the current consumption is 3mA.
{"title":"A 1.5-V Power Supply inductorless Low Noise Amplifier with 1dB-STEP programmable gain for FM-Radio receivers","authors":"R. Cojan, Cristian Murtaza","doi":"10.1109/SMICND.2010.5650505","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650505","url":null,"abstract":"In this paper a Low Noise Amplifier suitable for usage in FM-Radio receivers in a standard 60 nm RF process is presented. The LNA is designed to be used without a matching network in order to minimize the PCB cost, which means that the input impedance is in accordance with the antenna impedance. The LNA has a total gain of 27 dB, programmable in 1 dB-step, in the FM-Radio bandwidth. The noise figure of the LNA is 2 dB, its P1dB is −27 dBm and the current consumption is 3mA.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132065241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650469
L. Ionescu, A. Mazare, G. Serban
The content addressable memory (CAM) is allowed to search a data word without knowing where its address is. In addition, it is permissible to associate the content of the location or neighboring locations where the data word was identified. This paper presents our own approach for VLSI hardware implementation of the CAM memory. The proposed solution uses a Hopfield neural network model and is characterized by simplicity and the possibility of using the same hardware structures for saving may data patterns. Will be presented design methods and implementation to VLSI circuit structures, the performance of our solution and experimental results.
{"title":"VLSI implementation of an associative content addressable memory based on Hopfield network model","authors":"L. Ionescu, A. Mazare, G. Serban","doi":"10.1109/SMICND.2010.5650469","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650469","url":null,"abstract":"The content addressable memory (CAM) is allowed to search a data word without knowing where its address is. In addition, it is permissible to associate the content of the location or neighboring locations where the data word was identified. This paper presents our own approach for VLSI hardware implementation of the CAM memory. The proposed solution uses a Hopfield neural network model and is characterized by simplicity and the possibility of using the same hardware structures for saving may data patterns. Will be presented design methods and implementation to VLSI circuit structures, the performance of our solution and experimental results.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134413559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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