Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650440
D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin
A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
{"title":"V-shape through wafer via manufactured by drie variable isotropy process","authors":"D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin","doi":"10.1109/SMICND.2010.5650440","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650440","url":null,"abstract":"A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115541946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650619
B. Șerban, A. K. Sarin Kumar, C. Cobianu, O. Buiu, S. Costea, C. Bostan, N. Varachiu
The Hard Soft Acid Base (HSAB) theory is introduced as a new tool to select or design sensitive materials for carbon dioxide detection with SAW-BAW (Surface Acoustic Waves - Bulk Acoustic Waves) devices. According to HSAB, CO2 is hard acid, thus small organic or inorganic molecules, or polymers which can act as hard bases could be suitable candidates as sensing layers for carbon dioxide detection. As a consequence of this theory, we propose the following polymers as potential candidates for CO2 sensing: simple polyallylamine, N-substituted polyallylamine, polydiallylamine and polyvinylamine, and mixtures of these polymers. The SAW device coated with one of the selected polymers, polyallyamine, shows good sensitivity for CO2 concentration (in the range 500–5000 ppm), long term stability and repeatability.
{"title":"Selection of gas sensing materials using the Hard Soft Acid Base theory; application to Surface Acoustic Wave CO2 detection","authors":"B. Șerban, A. K. Sarin Kumar, C. Cobianu, O. Buiu, S. Costea, C. Bostan, N. Varachiu","doi":"10.1109/SMICND.2010.5650619","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650619","url":null,"abstract":"The Hard Soft Acid Base (HSAB) theory is introduced as a new tool to select or design sensitive materials for carbon dioxide detection with SAW-BAW (Surface Acoustic Waves - Bulk Acoustic Waves) devices. According to HSAB, CO2 is hard acid, thus small organic or inorganic molecules, or polymers which can act as hard bases could be suitable candidates as sensing layers for carbon dioxide detection. As a consequence of this theory, we propose the following polymers as potential candidates for CO2 sensing: simple polyallylamine, N-substituted polyallylamine, polydiallylamine and polyvinylamine, and mixtures of these polymers. The SAW device coated with one of the selected polymers, polyallyamine, shows good sensitivity for CO2 concentration (in the range 500–5000 ppm), long term stability and repeatability.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114458823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650689
D. Popovici, C. Hulubei, V. Musteata, M. Brumǎ, A. Muller
A series of polyimides (PI) based on two dianhydrides, namely 5-(2,5-dioxotetra-hydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylicanhydride (DOCDA) and benzophenonetetracarboxylicdianhydride (BTDA), and an aliphatic diamine, namely 1,6 diaminohexane (DAH), have been obtained by solution polycondensation reaction, followed by thermal ring closure of the resulting polyamic acids. The chemical structures were identified by infrared and 1H-NMR spectroscopy and their thermal and electrical properties (dielectric constant and dielectric loss at different frequencies) were investigated. The polymers showed good thermal stability, with no significant weight loss up to 340°C, with 5% weight loss temperature in the range of 345–430°C and glass transition temperatures (Tgs) between 122–190°C. The resulting polyimides gave flexible films by thermal imdization of poly (amic acid) precursors. The AFM analysis revealed a smooth topography of their surfaces, with root-mean-square (Sq) roughness between 0.42–6.32 nm and average roughness (Sa) in the range of 0.33–2.39 nm. The dielectric constants of the PI films varied between 3.05 and 2.68 at 1 MHz frequency. The correlation between the polymers structure and their properties has been discussed.
{"title":"New polyimides containing aliphatic segments and thin films based on them","authors":"D. Popovici, C. Hulubei, V. Musteata, M. Brumǎ, A. Muller","doi":"10.1109/SMICND.2010.5650689","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650689","url":null,"abstract":"A series of polyimides (PI) based on two dianhydrides, namely 5-(2,5-dioxotetra-hydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylicanhydride (DOCDA) and benzophenonetetracarboxylicdianhydride (BTDA), and an aliphatic diamine, namely 1,6 diaminohexane (DAH), have been obtained by solution polycondensation reaction, followed by thermal ring closure of the resulting polyamic acids. The chemical structures were identified by infrared and 1H-NMR spectroscopy and their thermal and electrical properties (dielectric constant and dielectric loss at different frequencies) were investigated. The polymers showed good thermal stability, with no significant weight loss up to 340°C, with 5% weight loss temperature in the range of 345–430°C and glass transition temperatures (Tgs) between 122–190°C. The resulting polyimides gave flexible films by thermal imdization of poly (amic acid) precursors. The AFM analysis revealed a smooth topography of their surfaces, with root-mean-square (Sq) roughness between 0.42–6.32 nm and average roughness (Sa) in the range of 0.33–2.39 nm. The dielectric constants of the PI films varied between 3.05 and 2.68 at 1 MHz frequency. The correlation between the polymers structure and their properties has been discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121075078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650237
M. Mihailescu, A. Sobetkii, M. Pelteacu
The aim of our study was to find a simple design for diffractive microlenses (DMLs) which will generate two focal points on the propagation axis at plane wave incidence. We investigate the influence of the missing central zones in the diffraction pattern. The fabrication steps include e-beam lithography (for mask pattern) and reactive ion etching (for transparent DMLs). To visualize their transparent binary microrelief and the phase profile, we employ the digital holographic microscopy technique. Experimental and simulation results are presented.
{"title":"DIffractive Microlenses With binary focal points on the optical axis","authors":"M. Mihailescu, A. Sobetkii, M. Pelteacu","doi":"10.1109/SMICND.2010.5650237","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650237","url":null,"abstract":"The aim of our study was to find a simple design for diffractive microlenses (DMLs) which will generate two focal points on the propagation axis at plane wave incidence. We investigate the influence of the missing central zones in the diffraction pattern. The fabrication steps include e-beam lithography (for mask pattern) and reactive ion etching (for transparent DMLs). To visualize their transparent binary microrelief and the phase profile, we employ the digital holographic microscopy technique. Experimental and simulation results are presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121629333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650615
M. Ignat, C. Pastravanu, E. Popovici
Carbon nanotubes, fullerenes, and mesoporous carbon structures constitute a new class of carbon nanomaterials with properties that differ significantly from other forms of carbon such as graphite and diamond. The ability to custom synthesize fiber-like mesoporous carbon with attached functional groups has opened up new avenues to design high surface area catalyst supports and materials with high photochemical activity. Unlike the conventional graphite phase, carbon nanostructures possess metallic or semiconductor properties that can induce catalysis by participating directly in the charge transfer process. Further, the photochemical properties of these materials facilitate modulation of their charge transfer properties and aid in the design of photocatalysts for phenol degradation.
{"title":"Mesoporous carbon pipes-suitable materials for photocatalytic supports","authors":"M. Ignat, C. Pastravanu, E. Popovici","doi":"10.1109/SMICND.2010.5650615","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650615","url":null,"abstract":"Carbon nanotubes, fullerenes, and mesoporous carbon structures constitute a new class of carbon nanomaterials with properties that differ significantly from other forms of carbon such as graphite and diamond. The ability to custom synthesize fiber-like mesoporous carbon with attached functional groups has opened up new avenues to design high surface area catalyst supports and materials with high photochemical activity. Unlike the conventional graphite phase, carbon nanostructures possess metallic or semiconductor properties that can induce catalysis by participating directly in the charge transfer process. Further, the photochemical properties of these materials facilitate modulation of their charge transfer properties and aid in the design of photocatalysts for phenol degradation.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650488
I. Dulama, G. Cimpoca, C. Radulescu, I. Popescu, I. Bancuta, M. Cimpoca, I. Cernica
In this paper we present a very new technique for analytical methods which utilize the quartz crystal microbalance (QCM). This is rapid expansion in application and understanding-oriented work. Using the QCM in the liquid phase and applying it to non-rigid over layers have created new experimental opportunities. In research, the most common QCM crystal applications include metal deposition monitors, chemical reaction monitors, biomedical sensors, and environmental monitoring applications.
{"title":"Analysis of liquids and viscoelestic films by quartz crystal microbalance","authors":"I. Dulama, G. Cimpoca, C. Radulescu, I. Popescu, I. Bancuta, M. Cimpoca, I. Cernica","doi":"10.1109/SMICND.2010.5650488","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650488","url":null,"abstract":"In this paper we present a very new technique for analytical methods which utilize the quartz crystal microbalance (QCM). This is rapid expansion in application and understanding-oriented work. Using the QCM in the liquid phase and applying it to non-rigid over layers have created new experimental opportunities. In research, the most common QCM crystal applications include metal deposition monitors, chemical reaction monitors, biomedical sensors, and environmental monitoring applications.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125471383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650376
G. Kliros
We present a simple phenomenological model for the quantum capacitance of bilayer graphene. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on gated bilayer graphene. The temperature dependence of quantum capacitance is also investigated.
{"title":"Quantum capacitance of bilayer graphene","authors":"G. Kliros","doi":"10.1109/SMICND.2010.5650376","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650376","url":null,"abstract":"We present a simple phenomenological model for the quantum capacitance of bilayer graphene. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on gated bilayer graphene. The temperature dependence of quantum capacitance is also investigated.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"26 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650518
C. Cobianu, B. Șerban, I. Georgescu, S. Costea, C. Bostan
It is the purpose of this paper to present a novel generic concept for low drift chemical sensing which is applicable at micro and nanometer scale, based on a new, all-differential approach. At micrometer level, our principle is explained by means of surface acoustic wave (SAW) chemical sensing, while at nano level, we are using the resonant sensing principle to develop our genuine differential concept. Unlike the traditional differential approaches based on functionalized sensing layer in the sensing loop, and on a uncoated surface in the reference loop, our all differential concept provides a better response subtraction between the two paths, as the sensing loop consists of a functionalized sensing layer, as before, but, the reference loop consists of a functionalized non-sensing layer, with the same ageing and humidity behavior as the sensing layer. Twinned electronic reading is used for both loops, and thus all the common mode signals are subtracted in the differential reading, assuring the minimum base line drift of the sensor. Preliminary results of all differential sensor response to humidity and temperature variations are shown for the SAW sensors, with the sensor signal kept independent of their changes.
{"title":"A novel concept for low drift chemical sensing at micro and nano-scale","authors":"C. Cobianu, B. Șerban, I. Georgescu, S. Costea, C. Bostan","doi":"10.1109/SMICND.2010.5650518","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650518","url":null,"abstract":"It is the purpose of this paper to present a novel generic concept for low drift chemical sensing which is applicable at micro and nanometer scale, based on a new, all-differential approach. At micrometer level, our principle is explained by means of surface acoustic wave (SAW) chemical sensing, while at nano level, we are using the resonant sensing principle to develop our genuine differential concept. Unlike the traditional differential approaches based on functionalized sensing layer in the sensing loop, and on a uncoated surface in the reference loop, our all differential concept provides a better response subtraction between the two paths, as the sensing loop consists of a functionalized sensing layer, as before, but, the reference loop consists of a functionalized non-sensing layer, with the same ageing and humidity behavior as the sensing layer. Twinned electronic reading is used for both loops, and thus all the common mode signals are subtracted in the differential reading, assuring the minimum base line drift of the sensor. Preliminary results of all differential sensor response to humidity and temperature variations are shown for the SAW sensors, with the sensor signal kept independent of their changes.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650675
N. Cioateră, V. Pârvulescu, A. Rolle, R. Vannier
Nanopowders with compositions Ce0.8Gd0.2O2−δ (CG), Ce0.8Sm0.2O2−δ (CS), and Ce0.9Eu0.1O2−δ (CE) have been synthesized by a modified Pechini method. X-ray diffraction (XRD) revealed that all powders calcined at 550°C were single phase, with the cubic fluorite-type structure. The good sintering properties of the synthesized nanopowders allowed us to obtain dense ceramics (>97% theoretical density). The ionic conductivities of doped ceria ceramics were investigated as a function of temperature by using AC impedance spectroscopy in the temperature range 300–800°C. The best conductivity was evidenced for the Ce0.8Sm0.2O2−δ sample.
{"title":"Effect of dopant on the thermal and electrical behavior of nanostructured ceria materials","authors":"N. Cioateră, V. Pârvulescu, A. Rolle, R. Vannier","doi":"10.1109/SMICND.2010.5650675","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650675","url":null,"abstract":"Nanopowders with compositions Ce<inf>0.8</inf>Gd<inf>0.2</inf>O<inf>2−δ</inf> (CG), Ce<inf>0.8</inf>Sm<inf>0.2</inf>O<inf>2−δ</inf> (CS), and Ce<inf>0.9</inf>Eu<inf>0.1</inf>O<inf>2−δ</inf> (CE) have been synthesized by a modified Pechini method. X-ray diffraction (XRD) revealed that all powders calcined at 550°C were single phase, with the cubic fluorite-type structure. The good sintering properties of the synthesized nanopowders allowed us to obtain dense ceramics (>97% theoretical density). The ionic conductivities of doped ceria ceramics were investigated as a function of temperature by using AC impedance spectroscopy in the temperature range 300–800°C. The best conductivity was evidenced for the Ce<inf>0.8</inf>Sm<inf>0.2</inf>O<inf>2−δ</inf> sample.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128333457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650739
D. Neculoiu, A. Muller, A. Stefanescu, T. Vaha-Heikkila, I. Petrini, C. Buiculescu
This paper presents the electromagnetic modelling and design of several millimetre wave components and circuits fabricated using Low-Temperature Co-fired Ceramic technology. The circuits include embedded transmission lines and vertical transitions designed to operate in the W band.
{"title":"Electromagnetic design of W-band circuits in LTCC technology","authors":"D. Neculoiu, A. Muller, A. Stefanescu, T. Vaha-Heikkila, I. Petrini, C. Buiculescu","doi":"10.1109/SMICND.2010.5650739","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650739","url":null,"abstract":"This paper presents the electromagnetic modelling and design of several millimetre wave components and circuits fabricated using Low-Temperature Co-fired Ceramic technology. The circuits include embedded transmission lines and vertical transitions designed to operate in the W band.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130581789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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