Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650506
Razvan Dochia, D. Bogdan
This paper presents a design technique used for low power circuits: datapath gating. Using this method we have implemented, simulated and analyzed how power consumption is influenced by the number of datapath gating modules and by the auto_ungroup capability option integrated in Synopsys Design Compiler. The obtained results show a maximum of 10% reduction in power consumption.
{"title":"Reducing power consumption on datapath buses","authors":"Razvan Dochia, D. Bogdan","doi":"10.1109/SMICND.2010.5650506","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650506","url":null,"abstract":"This paper presents a design technique used for low power circuits: datapath gating. Using this method we have implemented, simulated and analyzed how power consumption is influenced by the number of datapath gating modules and by the auto_ungroup capability option integrated in Synopsys Design Compiler. The obtained results show a maximum of 10% reduction in power consumption.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126011288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650719
I. Sava, S. Chisca, M. Brumǎ, G. Lisa, C. Buiculescu
The thermal treatment of polyamidic acid films based on benzophenontetracarboxylic dianhydride and 4,4'-diamino-3,3'-dimethyl diphenylmethane, at different temperatures, led to polyimide structures having different degree of imidization. The thermal and dielectric characteristics of the films were investigated by using dynamic mechanical analysis, contact angles and dielectric spectroscopy measurements.
{"title":"Thin films based on benzophenontetracarboxylic dianhydride and 4,4'-diamino-3,3'-dimethyldiphenylmethane","authors":"I. Sava, S. Chisca, M. Brumǎ, G. Lisa, C. Buiculescu","doi":"10.1109/SMICND.2010.5650719","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650719","url":null,"abstract":"The thermal treatment of polyamidic acid films based on benzophenontetracarboxylic dianhydride and 4,4'-diamino-3,3'-dimethyl diphenylmethane, at different temperatures, led to polyimide structures having different degree of imidization. The thermal and dielectric characteristics of the films were investigated by using dynamic mechanical analysis, contact angles and dielectric spectroscopy measurements.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130839102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650566
V. Obreja, A. Obreja, K. Nuttall
A commercial power silicon diode die was used in a suitable devised experiment with infrared imaging microscope. At 500 V applied reverse voltage, hot spots have been revealed near the junction periphery at 220 °C temperature. These hot spots are attributed to non-uniform leakage current flow at the junction periphery. At higher applied voltage these small overheated regions can initiate reverse electrical characteristic instability followed by failure. Further advance in the junction passivation process from device technology is required to provide high quality semiconductor-dielectric interface. This could enable reliable operation of some power silicon devices above 200°C junction temperature.
{"title":"Hot spots induced by reverse leakage current flow through the semiconductor-dielectric interface from device PN junction periphery","authors":"V. Obreja, A. Obreja, K. Nuttall","doi":"10.1109/SMICND.2010.5650566","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650566","url":null,"abstract":"A commercial power silicon diode die was used in a suitable devised experiment with infrared imaging microscope. At 500 V applied reverse voltage, hot spots have been revealed near the junction periphery at 220 °C temperature. These hot spots are attributed to non-uniform leakage current flow at the junction periphery. At higher applied voltage these small overheated regions can initiate reverse electrical characteristic instability followed by failure. Further advance in the junction passivation process from device technology is required to provide high quality semiconductor-dielectric interface. This could enable reliable operation of some power silicon devices above 200°C junction temperature.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121381640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650470
C. Bostan, B. Șerban, V. Avramescu, I. Georgescu
This paper presents a finite element (FE) model for SAW gas sensors with polymer layers, taking into account not only the mass loading effect, but also the viscoelastic properties of polymer layers, including loss. The FE model considers both variations of layer density and thickness with absorbed gas concentration. The damped eigenvalue analysis allows the calculation of complex propagation constants. This is an improvement over previously published FE works in this field, e.g. [1], which considered only the frequency shift and neglected the attenuation.
{"title":"Simulation of SAW gas sensors with polymer layers using the finite element method","authors":"C. Bostan, B. Șerban, V. Avramescu, I. Georgescu","doi":"10.1109/SMICND.2010.5650470","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650470","url":null,"abstract":"This paper presents a finite element (FE) model for SAW gas sensors with polymer layers, taking into account not only the mass loading effect, but also the viscoelastic properties of polymer layers, including loss. The FE model considers both variations of layer density and thickness with absorbed gas concentration. The damped eigenvalue analysis allows the calculation of complex propagation constants. This is an improvement over previously published FE works in this field, e.g. [1], which considered only the frequency shift and neglected the attenuation.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130375333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650760
C. Andrei, Gregory Bassement, D. Depreeuw, G. Imbert
In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.
{"title":"Bicmos LC-tank characterization and extraction of small signal equivalent circuit","authors":"C. Andrei, Gregory Bassement, D. Depreeuw, G. Imbert","doi":"10.1109/SMICND.2010.5650760","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650760","url":null,"abstract":"In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128424897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650740
M. Banciu, A. Ioachim, N. Militaru, G. Lojewski, R. Ramer
New distributed multilayer microstrip structures are investigated in microwaves. The amplitude and phase responses are analyzed for different geometrical parameters, number of cells and dielectric constants of the dielectric layers. It is shown that the proposed structures exhibit left-handed properties in a frequency range near the resonance.
{"title":"Structures exhibiting left-handed properties in microwave range","authors":"M. Banciu, A. Ioachim, N. Militaru, G. Lojewski, R. Ramer","doi":"10.1109/SMICND.2010.5650740","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650740","url":null,"abstract":"New distributed multilayer microstrip structures are investigated in microwaves. The amplitude and phase responses are analyzed for different geometrical parameters, number of cells and dielectric constants of the dielectric layers. It is shown that the proposed structures exhibit left-handed properties in a frequency range near the resonance.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124014041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5649061
O. Pluchery, E. Lacaze, M. Simion, M. Miu, A. Bragaru, A. Radoi
Gold nanoparticles (AuNP) continue rising a strong interest for research and especially in the field of biosensors as attested by growing number of publications. One reason is that AuNP exhibit an optical response dominated by the localised surface plasmon resonance (LSPR) that is highly sensitive to the molecular environment. This paper describes the preparation of monodisperse supported AuNP and their characterization by optical UV-visible spectroscopy. It is shown how the surface density of AuNP can be extracted from the spectra, using a complementary check against AFM images. An example of a plasmonic biosensor capable of the specific recognition of avidin is presented.
{"title":"Optical characterization of supported gold nanoparticles for plasmonic biosensors","authors":"O. Pluchery, E. Lacaze, M. Simion, M. Miu, A. Bragaru, A. Radoi","doi":"10.1109/SMICND.2010.5649061","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649061","url":null,"abstract":"Gold nanoparticles (AuNP) continue rising a strong interest for research and especially in the field of biosensors as attested by growing number of publications. One reason is that AuNP exhibit an optical response dominated by the localised surface plasmon resonance (LSPR) that is highly sensitive to the molecular environment. This paper describes the preparation of monodisperse supported AuNP and their characterization by optical UV-visible spectroscopy. It is shown how the surface density of AuNP can be extracted from the spectra, using a complementary check against AFM images. An example of a plasmonic biosensor capable of the specific recognition of avidin is presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127735358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650692
E. Hamciuc, I. Bacosca, C. Hamciuc, M. Ignat, M. Brumǎ
Flexible thin films based on poly (amide-imide)s were obtained by casting technique and their properties were studied. The polymers were synthesized by solution polycondensation reaction of trimellitic anhydride chloride with 2,6-bis (m-aminophenoxy)-benzonitrile or 2,6-bis (p-aminophenoxy) benzonitrile. They were easily soluble in polar amidic solvents such as N-methyl-2-pyrrolidone and showed high thermal stability, with decomposition temperature being above 400°C. Composite films based on these polymers and pyrite ash powder were also prepared. An interferometric method was used for measurement of the linear displacement of polymeric composite membranes by applying an electrical tension.
{"title":"Study of thin films made from poly (amide-imide)s containing nitrile groups","authors":"E. Hamciuc, I. Bacosca, C. Hamciuc, M. Ignat, M. Brumǎ","doi":"10.1109/SMICND.2010.5650692","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650692","url":null,"abstract":"Flexible thin films based on poly (amide-imide)s were obtained by casting technique and their properties were studied. The polymers were synthesized by solution polycondensation reaction of trimellitic anhydride chloride with 2,6-bis (m-aminophenoxy)-benzonitrile or 2,6-bis (p-aminophenoxy) benzonitrile. They were easily soluble in polar amidic solvents such as N-methyl-2-pyrrolidone and showed high thermal stability, with decomposition temperature being above 400°C. Composite films based on these polymers and pyrite ash powder were also prepared. An interferometric method was used for measurement of the linear displacement of polymeric composite membranes by applying an electrical tension.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121277986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650563
A. Danchiv, Marian Hulub, Diana Manta
This paper presents a fully protected low side switch design from the thermal behavior perspective. The power dissipation is evaluated both for normal operation and for the main high power operation conditions: short circuit and overload, inductive clamping and turn on/off process. Electro-thermal simulations are used to evaluate the surface temperature, that is taken into account in designing the protection functions.
{"title":"Power dissipation considerations in low side switch design","authors":"A. Danchiv, Marian Hulub, Diana Manta","doi":"10.1109/SMICND.2010.5650563","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650563","url":null,"abstract":"This paper presents a fully protected low side switch design from the thermal behavior perspective. The power dissipation is evaluated both for normal operation and for the main high power operation conditions: short circuit and overload, inductive clamping and turn on/off process. Electro-thermal simulations are used to evaluate the surface temperature, that is taken into account in designing the protection functions.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129156573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-03DOI: 10.1109/SMICND.2010.5650508
V. Obreja, A. Obreja
For many available commercial semiconductor devices, operation in the breakdown region is not allowed because of risk of failure. For specialized devices operation is permitted in specified conditions. Reverse electrical characteristics including the breakdown region for typical devices are presented and analyzed. A breakdown region caused by current flow in the bulk, due to carrier avalanche multiplication is exhibited for specialized devices from room temperature up to 150 °C. Nonetheless above 150 °C because of high level of leakage current flow at the interface from passivated termination, device failure may take place before the avalanche bulk breakdown is reached. For other devices even at lower temperature, excessive flow of current at the interface is a limitation to reach the avalanche bulk breakdown.
{"title":"Breakdown of semiconductor devices and influence of the interface from passivated termination","authors":"V. Obreja, A. Obreja","doi":"10.1109/SMICND.2010.5650508","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650508","url":null,"abstract":"For many available commercial semiconductor devices, operation in the breakdown region is not allowed because of risk of failure. For specialized devices operation is permitted in specified conditions. Reverse electrical characteristics including the breakdown region for typical devices are presented and analyzed. A breakdown region caused by current flow in the bulk, due to carrier avalanche multiplication is exhibited for specialized devices from room temperature up to 150 °C. Nonetheless above 150 °C because of high level of leakage current flow at the interface from passivated termination, device failure may take place before the avalanche bulk breakdown is reached. For other devices even at lower temperature, excessive flow of current at the interface is a limitation to reach the avalanche bulk breakdown.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128656071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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