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Impact in the Parallel Processing of IHM-Plasma Using the Earliest-Deadline-First Algorithm for the Task-Scheduler Realized by Hardware 硬件实现的任务调度程序采用最早截止日期优先算法对IHM-Plasma并行处理的影响
Q4 Engineering Pub Date : 2023-05-22 DOI: 10.29292/jics.v18i1.576
Igor Krause, Leandro Poloni Dantas, Salvador Pinillos Gimenez
Abstract—This work studies the impact in the parallel processing of the Interlocked-Hardware-Microkernel (IHM) Plasma microprocessor (IHM-Plasma) by implementing the Earliest-Deadline-First (EDF) algorithm by hardware in the task-scheduler block that belongs to those task-based operational systems, such as that related to the real-time operational systems (RTOS). IHM-Plasma presents Reduced Instruction Set Computer (RISC) architecture. The main results have observed by this study show that the IHM-Plasma running the EDF algorithm by hardware has increased the tasks executed per second in 174% while running a task-based operational system with 14 active tasks in comparison to the original Plasma running the EDF algorithm by software. The developed work has great potential use in Hard Real-Time Systems and others where a rigid control of deadlines is essential and hold many tasks. 
摘要——本工作通过在属于基于任务的操作系统(如与实时操作系统(RTOS)相关的操作系统)的任务调度器块中用硬件实现最早截止日期优先(EDF)算法,研究了互锁硬件微内核(IHM)Plasma微处理器(IHM-Plasma)并行处理中的影响。IHM Plasma提出了精简指令集计算机(RISC)体系结构。本研究观察到的主要结果表明,与通过软件运行EDF算法的原始Plasma相比,在运行具有14个活动任务的基于任务的操作系统时,通过硬件运行EDF的IHM Plasma将每秒执行的任务增加了174%。所开发的工作在硬实时系统和其他系统中有很大的潜在用途,在这些系统中,严格控制截止日期是必不可少的,并包含许多任务。
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引用次数: 0
High-Throughput Hardware Design for the AV1 Decoder Switchable Loop Restoration Filters AV1解码器可切换环路恢复滤波器的高吞吐量硬件设计
Q4 Engineering Pub Date : 2023-05-22 DOI: 10.29292/jics.v18i1.667
Roberta Palau, Wagner Penny, Ramiro Viana, J. Goebel, G. Corrêa, M. Porto, L. Agostini
This paper presents a high-throughput hardware design for the Switchable Loop Restoration Filter (SLRF) of the AOM Video 1 (AV1) video format. This hardware includes the two filters defined at the AV1 SLRF: the Separable Symmetric Normalized Wiener Filter (SSNWF) and the Dual Self- Guided Filter (DSGF). The SLRF is the last step in the AV1 loop restoration filters, and it is used to attenuate blurring artifacts, improving the subjective video quality and the coding efficiency. The designed hardware targeted the AV1 decoderand is able to process up to 4K Ultra-High Definition (4K UHD) videos (with 3840x2160 pixels) at 60 frames per second (fps) in real-time. In order to cover different scenarios, two other target throughputs were also evaluated: 4K UHD at 30fps and Full HD (FHD) (with 1920x1080 pixels) at 30fps. The architectures were synthesized for standard cells using the 40 nm TSMC library. The SSNWF and DSGF architectures used 37.38 Kgates and 177.58 kgates in all evaluated scenarios. Depending on the evaluated scenario, the SSNWF power dissipation varied from 8.25mWto 26.95mWand the DSGF power varied from 57.19 mW to 115.02 mW. This is the first paper in the literature presenting a hardware design for the AV1 SLRF with its two filters.
本文提出了AOM Video 1 (AV1)视频格式的可切换环路恢复滤波器(SLRF)的高吞吐量硬件设计。该硬件包括AV1 SLRF定义的两个滤波器:可分离对称归一化维纳滤波器(SSNWF)和双自导滤波器(DSGF)。SLRF是AV1环路恢复滤波器的最后一步,用于衰减模糊伪影,提高主观视频质量和编码效率。设计的硬件针对AV1解码器,能够以每秒60帧(fps)的速度实时处理高达4K超高清(4K UHD)视频(3840x2160像素)。为了涵盖不同的场景,我们还评估了另外两个目标吞吐量:30fps的4K UHD和30fps的全高清(FHD) (1920x1080像素)。利用40 nm TSMC文库合成了标准细胞的结构。在所有评估场景中,SSNWF和DSGF架构分别使用了37.38 Kgates和177.58 Kgates。根据评估场景的不同,SSNWF的功耗从8.25mW变化到26.95mW, DSGF的功耗从57.19 mW变化到115.02 mW。这是文献中第一篇介绍带有两个滤波器的AV1 SLRF硬件设计的论文。
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引用次数: 0
Towards a Reference Place and Route Flow for Academic Research 走向学术研究的参照地和路径流
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.648
T. Fontana, R. Netto, S. Almeida, Erfan Aghaeekiasaraee, L. Behjat, José Luís Almada Güntzel
Due to the complexity of contemporary circuits, physical synthesis has become a crucial step for achieving design closure. The placement of cells direct impacts the routing solution. For example, a region with a high cell density can lead to pin access issues in detailed routing. Therefore, small inefficiencies in the placement solution can be boosted during routing, which has a negative impact on design quality and convergence. Unfortunately, most academic research works evaluate the results only in the target step without considering the complete place and route flows. In this work, we experimentally explored different flows built up from academic placers and routers to find which one leads to the best overall results so that researchers can use them as a reference. In order to evaluate those flows, we used the ISPD 2018 and ISPD 2019 CAD Contest benchmarks, which are the most realistic academic benchmarks available with placement and routing information. Considering the evaluator reports, no combination of tools achieved the best result for all circuits. Nevertheless, the flow Contest placement + CUGR + TritonRoute achieved the best results in fifteen out of twenty benchmarks.
由于当代电路的复杂性,物理合成已成为实现设计闭合的关键步骤。单元的放置直接影响布线解决方案。例如,具有高单元密度的区域可能导致详细布线中的引脚访问问题。因此,在布线过程中,布局解决方案中的小低效率可能会增加,这会对设计质量和收敛性产生负面影响。遗憾的是,大多数学术研究工作只在目标步骤中评估结果,而没有考虑完整的地点和路线流。在这项工作中,我们通过实验探索了由学术放置器和路由器建立的不同流,以找出哪一个流能产生最佳的整体结果,以便研究人员可以将其作为参考。为了评估这些流量,我们使用了ISPD 2018和ISPD 2019 CAD竞赛基准,这是最现实的学术基准,提供了位置和路线信息。考虑到评估人员的报告,没有任何一种工具组合能为所有电路获得最佳结果。尽管如此,flow Contest placement+CUGR+TritonRoute在二十个基准中的十五个基准中取得了最好的成绩。
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引用次数: 0
EDA: Overview and Some Trends EDA:综述与发展趋势
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.679
R. da Luz Reis
The development of any integrated circuit depends heavily on the quality of the EDA (Electronic Design Automation) tools used in the design flow. Improved CAD tools and algo-rithms are needed to cope with new fabrication technology requirements, advanced performance constraints, or simply the enormous number of elements involved. In this paper it is giving an overview of the importance of automation in the design process, and it is done a survey of different types of tools presenting some classifications of the tools. Then some few trends on EDA that are needed to deal with the evolution of manufacturing processes will be presented. Some optimi-zation techniques will be presented for selected physical de-sign problems (layout). An important aspect of the design is to reduce power consumption at all levels of abstraction. Power optimization is fundamental in nanoCMOS and in the IoT world. At logic and physical levels, one approach that can be used to optimize the circuit, especially reducing static leakage power and using the automatic generation of the cell layout. With on-the-fly cell generation, the same function can be implemented with a reduced number of transistors, requiring less area and significantly optimizing power and performance. Finally, the use of estimation and visualiza-tion tools is equally important. They can be applied either in the design flow or in the tool's development and research en-vironments as a way to observe and understand the behavior and interactions of algorithms and their operation on real designs and benchmarks.
任何集成电路的开发在很大程度上取决于设计流程中使用的EDA(电子设计自动化)工具的质量。需要改进的CAD工具和算法来应对新的制造技术要求,先进的性能限制,或者仅仅是涉及的大量元素。本文概述了自动化在设计过程中的重要性,并对不同类型的工具进行了调查,并对工具进行了分类。然后介绍了EDA的一些发展趋势,以应对制造过程的演变。针对选定的物理设计问题(布局),将介绍一些优化技术。该设计的一个重要方面是减少所有抽象级别的功耗。功率优化是纳米ocmos和物联网领域的基础。在逻辑和物理层面上,可以使用一种方法来优化电路,特别是减少静电泄漏功率和使用自动生成单元布局。通过动态电池生成,可以用更少的晶体管数量实现相同的功能,所需的面积更小,并显着优化功率和性能。最后,评估和可视化工具的使用同样重要。它们既可以应用于设计流程中,也可以应用于工具的开发和研究环境中,作为一种观察和理解算法的行为和交互以及它们在实际设计和基准上的操作的方法。
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引用次数: 0
Qualitative Analysis of DG-TFET Structures with Gate Material Engineering 栅极材料工程对DG-TFET结构的定性分析
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.635
B. Balaji, Sadhu Satya Sravani, K. Srinivasa Rao
The paper largely focuses on enhancing device parameters of a Double Gate Tunnel Field Effect Transistor structure such as ON current, OFF Current,transconductance and ratio of ON current to OFF current (ION / IOFF) using hetero dielectric gate material. The paper presents three state of art of dual gate TFET i.e., Conventional Double Gate TFET (CDGTFET), horizontally placed Dual Material Double Gate TFET (HDMDGTFET), vertically placed Dual Material Double Gate TFET (VDMDGTFET). The dual material dielectric combinations used in the structures are (SiO2-TiO2), (HfO2-TiO2) and (SiO2-SiC). The Structures are being modeled using Silvaco Atlas tool. Simulations of these structures are carried out and various electrical parameters have been obtained. The results obtained from simulation of these structures are being presented and discussed in this paper. Comparison of the three structures is carried out and resulted in the reduction of ON Current and OFF Current is observed.
本文重点研究了利用异质介质栅极材料提高双栅隧道场效应晶体管结构的器件参数,如on电流、OFF电流、跨导和on / OFF电流比(ION / IOFF)。本文介绍了传统双栅TFET (CDGTFET)、水平放置双材料双栅TFET (HDMDGTFET)、垂直放置双材料双栅TFET (VDMDGTFET)三种双栅TFET的发展现状。结构中使用的双材料介电组合为(SiO2-TiO2)、(HfO2-TiO2)和(SiO2-SiC)。使用Silvaco Atlas工具对结构进行建模。对这些结构进行了仿真,得到了各种电气参数。本文对这些结构的模拟结果进行了介绍和讨论。对三种结构进行了比较,并观察到导通电流和关断电流的减小。
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引用次数: 0
UTBB FD-SOI MOSFET with SELBOX in DTMOS Configuration 在DTMOS配置中带SELBOX的UTBB FD-SOI MOSFET
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.641
N. G. Junior, Jeverson Cardoso da Silva, E. Martins, Maria Glória Caño De Andrade
Abstract— For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI)       n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) substrate will be analyzed. The drain and substrate current, transconductance (gm) and Subthreshold Slope (SS) will be compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the output conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.
摘要:本文将首次分析使用SELBOX(选择性埋藏氧化物)衬底的超薄体和埋藏氧化物完全耗尽绝缘体上硅(UTBB FDSOI) n沟道和动态阈值MOS配置(DTMOS)。将比较在DTMOS模式和SELBOX不同间隙宽度(WGAP)的标准偏置配置下的漏极和基板电流、跨导(gm)和亚阈值斜率(SS)。此外,还通过数值模拟研究了输出电导和跨电导增益。结果表明,在DTMOS模式下的SELBOX结构是模拟应用的竞争候选人。
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引用次数: 0
Guest Editors' Words 客座编辑的话
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.681
R. Hentschke, C. Meinhardt
Electronic Design Automation has been the driving force of VLSI design since those circuits are far more complex beyond what a human designer can comprehend. Today, the most advanced circuits have billions of components, mostly transistors, arranged in random logic, memory, data path, analog, mixed signal, IPs, etc. The process of automation of a large VLSI chip is extremely complex, generally decomposed into several categories and steps that are part of most existing commercial tool flows. Furthermore, timing and power optimization enable a wide range of applications we see today such as computing, mobile, internet of things (IoT), etc., and can only happen with creative innovations in EDA. For its complexity, any researcher in the field must invest heavily in finding and reading appropriate literature. In this special edition, the Journal of Integrated Circuits and Systems is collecting and surveying the key topics, algorithms and approaches that pertain to the current state-of-the-art in EDA research.
电子设计自动化一直是超大规模集成电路设计的驱动力,因为这些电路的复杂性远远超出了人类设计师的理解范围。如今,最先进的电路有数十亿个组件,主要是晶体管,排列在随机逻辑、存储器、数据路径、模拟、混合信号、IP等中。大型超大规模集成电路芯片的自动化过程极其复杂,通常分解为几个类别和步骤,这些类别和步骤是大多数现有商业工具流程的一部分。此外,时序和功率优化实现了我们今天看到的广泛应用,如计算、移动、物联网(IoT)等,只有在EDA中进行创造性创新才能实现。由于其复杂性,该领域的任何研究人员都必须投入大量资金来寻找和阅读合适的文献。在本特刊中,《集成电路与系统杂志》将收集和调查与EDA研究当前最先进技术相关的关键主题、算法和方法。
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引用次数: 0
Using iMTGSPICE to Optimize Cascaded Miller OTAs and Boost Electrical Performance, Robustness and Reduce Die Area 使用iMTGSPICE优化级联Miller ota,提高电气性能,稳健性并减少模具面积
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.672
José Roberto Banin Júnior, Rodrigo Alves de Lima Moreto, G. A. da Silva, Salvador Pinillos Gimenez
Analog designers usually cascade several basic analog building blocks that were previously optimized to increase the open-loop voltage gain (AV0) and to avoid the increasing of the Design and Optimization Cycle Time (DOCT) of a given System-On-a-Chip. However, still exist a big doubt about if this approach is really better than that considering the implementation of amplifiers in cascade, without considering previously optimized analog building blocks. Thus, the main objective of this paper is to perform a detailed comparative study between robust amplifiers in cascade implemented without using analog building blocks previously designed and optimized and a similar one that uses analog building blocks previously designed and optimized (typical design approach). The computational design and optimization tool, named iMTGSPICE, which uses heuristics algorithms of the Artificial Intelligence integrated to the expertise of the analog designers (Human Intelligence), is used to perform these implementations to remarkably reduce DOCT of these implementations. This work demonstrates that it is possible to reduce the total gate area (44.6%) and to increase the operating temperature range from 0oC to 36oC to -40oC to 125oC of the robust amplifier in cascade that was implemented without using analog building blocks previously designed and optimized compared to one that was implemented by using analog building blocks previously designed and optimized.
模拟设计人员通常级联几个基本的模拟构建模块,这些模块先前经过优化,以增加开环电压增益(AV0),并避免增加给定片上系统的设计和优化周期时间(DOCT)。然而,对于这种方法是否真的比考虑级联放大器的实现而不考虑先前优化的模拟构建块的方法更好,仍然存在很大的疑问。因此,本文的主要目的是对不使用先前设计和优化的模拟构建块实现的级联鲁棒放大器与使用先前设计和优化的模拟构建块(典型设计方法)的类似放大器进行详细的比较研究。计算设计和优化工具名为iMTGSPICE,它使用人工智能的启发式算法与模拟设计师(人类智能)的专业知识相结合,用于执行这些实现,以显着减少这些实现的DOCT。这项工作表明,与使用先前设计和优化的模拟构建块实现的级联鲁棒放大器相比,不使用先前设计和优化的模拟构建块实现的级联放大器有可能减少总栅极面积(44.6%),并将工作温度范围从0°c到36°c到-40°c到125°c。
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引用次数: 0
Design Automation for Emerging Technologies 新兴技术的设计自动化
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.652
Omar Paranaiba, Poliana A. C. Oliveira, Renan A. Marks, Gabriel Novy, Maria D. Vieira, Laysson Oliveira Luz, P. A. Silva, Ricardo Ferreira, J. Ramirez, J. Nacif, Guilherme Caporali
After the continuous development of CMOS technology driven by transistor miniaturization and Moore’s law, the scientific community is witnessing the exploration of emerging paradigms to find new ways to develop computational systems. This paper presents critical concepts for understanding some of these new nanocomputing technologies, specifically field-coupled, quantum-dot cellular automata, nanomagnetic logic, silicon dangling bounds, photonic crystal logic, and DNA computing. Next, it shows emerging design automation tools for each of these areas and how they can be applied to support the development of new computing systems. The level of maturity and production speed of solutions achieved by conventional silicon technology thanks to very efficient electronic design automation (EDA) is remarkable. However, here we are dealing with technologies still in their infancy. Therefore, improvements in design automation tools are undoubtedly a way to accelerate the growth of new substrate alternatives and modern applications.
在晶体管小型化和摩尔定律推动CMOS技术不断发展之后,科学界正在见证对新兴范式的探索,以寻找开发计算系统的新方法。本文提出了理解这些新的纳米计算技术的关键概念,特别是场耦合、量子点细胞自动机、纳米磁逻辑、硅悬挂边界、光子晶体逻辑和DNA计算。接下来,它展示了这些领域的新兴设计自动化工具,以及如何应用它们来支持新计算系统的开发。由于非常高效的电子设计自动化(EDA),传统硅技术实现的解决方案的成熟度和生产速度是显著的。然而,我们在这里处理的技术仍处于初级阶段。因此,设计自动化工具的改进无疑是加速新基板替代品和现代应用发展的一种方式。
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引用次数: 0
An Introduction to Metal and Via Fill 介绍金属和通过填充
Q4 Engineering Pub Date : 2022-12-31 DOI: 10.29292/jics.v17i3.673
K. Ramkumar
In VLSI manufacturing, certain steps such as Chemical Mechanical Polishing (CMP) could affect the functioning of the chip thereby affecting yield. The fill flow adds additional metal and via features to the layout so that the density of metal and vias are uniform across the layout. When metal and vias are uniformly spread across the layout, the side effects of the chemical mechanical polishing step are minimized because variation in polishing depth is minimized. Since the fill process involves addition of metal and via features to the finished layout, this could affect critical layout metrics such as timing. Therefore, it is best if the layout synthesis flow i.e. the place and route flow is made fill-aware to improve performance predictability and enable faster layout convergence. In this paper, we provide a brief overview of the fill problem, algorithms to analyze density and fill synthesis.
在超大规模集成电路制造中,化学机械抛光(CMP)等某些步骤可能会影响芯片的功能,从而影响产量。填充流为布局增加了额外的金属和通孔特征,使金属和通孔的密度在整个布局中保持均匀。当金属和过孔均匀地分布在整个布局中时,化学机械抛光步骤的副作用被最小化,因为抛光深度的变化被最小化。由于填充过程涉及到在成品布局中添加金属和通孔特性,这可能会影响关键的布局指标,如时间。因此,最好的布局综合流,即位置和路线流是填充感知的,以提高性能的可预测性,并使更快的布局收敛。在本文中,我们提供了填充问题的简要概述,算法分析密度和填充合成。
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引用次数: 0
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Journal of Integrated Circuits and Systems
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