Organic Electronics最新文献_第10页

Revealing the memory effect in phototransistors with vertical phase separation of conjugated/insulating polymer blends through film-on-water interface self-assembly 通过水膜界面自组装揭示共轭/绝缘聚合物共混物垂直相分离在光电晶体管中的记忆效应

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-26 DOI: 10.1016/j.orgel.2025.107230

Yan-Ting Chen , You-Wei Cao , Yu-Chih Hsu , Yan-Cheng Lin , Yang-Yen Yu

This study utilizes a blend of poly (3-hexylthiophene) (P3HT) and poly (1-pyrenemethyl methacrylate) (PPyMA) polymers to achieve vertical phase separation through air/liquid interface self-assembly. Due to the surface energy mismatch of these blends, a bilayer structure is formed between the conjugated and insulating polymers. The blended thin films are applied to phototransistor memory devices, with PPyMA as a photoactive electret and P3HT as a semiconductor channel. A comparative study of the two-transfer direction water side (forward structure) and air side (reverse structure) reveals that the vertical phase separation morphology of the aromatic side groups in PPyMA, along with its conjugation, is closely related to the photoresponse, memory retention, and durability of the photomemory devices. Electrical analysis shows that the device fabricated with the forward transfer (P3HT/PPyMA) can achieve photo writing through exposure to ultraviolet light at 265 nm, 310 nm, 365 nm, and blue light at 455 nm, while electrical erasure is performed via gate bias, resulting in a wide memory window (∼48.7 V). The device also exhibits a stable memory ratio in repeated write/erase measurements and long-term stability exceeding 10⁴ s. In contrast, the device fabricated with the reverse transfer (PPyMA/P3HT), due to the reverse bilayer structure, required hole injection to pass through the insulating PPyMA layer, and holes may recombine with stored electrons during vertical transport, thereby dismissing the memory mechanism. As a result, the device cannot effectively store charges to achieve memory retention. This study demonstrates vertical phase separation through air/liquid interface self-assembly and reveals the photoresponse and charge storage mechanisms of photomemory devices.

本研究利用聚（3-己基噻吩）（P3HT）和聚（1-芘甲基丙烯酸甲酯）（PPyMA）聚合物的共混物，通过气/液界面自组装实现垂直相分离。由于这些共混物的表面能不匹配，在共轭聚合物和绝缘聚合物之间形成了双层结构。混合薄膜应用于光晶体管存储器件，其中PPyMA作为光活性驻极体，P3HT作为半导体通道。通过对双转移方向水侧（正向结构）和空气侧（反向结构）的比较研究，发现PPyMA中芳香侧基的垂直相分离形态及其共轭关系与光记忆器件的光响应、记忆保持和耐用性密切相关。电学分析表明，采用前向转移（P3HT/PPyMA）制备的器件可以通过暴露于265 nm、310 nm、365 nm的紫外光和455nm的蓝光下实现照片写入，而通过栅极偏置进行电擦除，从而产生宽的记忆窗口（~ 48.7 V）。该器件在重复写入/擦除测量中也表现出稳定的记忆比，长期稳定性超过104 s。相反，用反向转移（PPyMA/P3HT）制作的器件，由于反向双层结构，需要空穴注入才能穿过绝缘的PPyMA层，并且空穴在垂直传输过程中可能与存储的电子重新结合，从而消除了存储机制。因此，设备不能有效地存储电荷以实现记忆保留。本研究通过空气/液体界面自组装实现了垂直相分离，揭示了光存储器件的光响应和电荷存储机制。

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引用次数: 0

An artificial synapse based on organic heterojunction of conducting polymer and molecular ferroelectrics 基于导电聚合物与铁电分子有机异质结的人工突触

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-26 DOI: 10.1016/j.orgel.2025.107242

Zimu Li , Chunli Jiang , Chunhua Luo , Hechun Lin , Xiaodong Tang , Hui Peng

To address the challenges posed by the rapid development of artificial intelligence and big data, various artificial synaptic devices have been developed to overcome the limitations of traditional computing systems. In this study, a two-terminal device using a conducting polymer, poly(hexylthiophene) (P3HT), and a molecular ferroelectric, diisopropylammonium bromide (DIPAB), is fabricated. The incorporation of the ferroelectric layer not only establishes an energy barrier for charge carriers generated by light pulses in the P3HT layer but also allows the device's response to be modulated by altering the ferroelectric polarization state of DIPAB. This device successfully simulates some basic biological synaptic functions by modulating light stimuli. Furthermore, the light logic functions of “AND” and “OR” are realized by using light pulses with different wavelengths, as well as the simulation of associative learning. The device is used to recognize MNIST handwritten digits based on a convolutional neural network (CNN), achieving a recognition accuracy of over 90 %. These results highlight the device's potential for neuromorphic computing.

为了应对人工智能和大数据快速发展带来的挑战，各种人工突触设备已经被开发出来，以克服传统计算系统的局限性。在本研究中，利用导电聚合物聚己基噻吩（P3HT）和铁电分子二异丙基溴化铵（DIPAB）制备了一种双端器件。铁电层的加入不仅为P3HT层中光脉冲产生的载流子建立了能量垒，而且还允许通过改变DIPAB的铁电极化状态来调制器件的响应。该装置通过调节光刺激成功地模拟了一些基本的生物突触功能。利用不同波长的光脉冲实现“与”和“或”的光逻辑功能，并模拟联想学习。该设备用于基于卷积神经网络（CNN）识别MNIST手写数字，识别准确率超过90%。这些结果突出了该设备在神经形态计算方面的潜力。

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引用次数: 0

Low-voltage RGB perovskite light-emitting transistors with magnetron sputtered Ta2O5 high-k dielectric layer 具有磁控溅射Ta2O5高k介电层的低压RGB钙钛矿发光晶体管

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-24 DOI: 10.1016/j.orgel.2025.107241

Xingyu Zhang, Min Guo, Jia Li, Tingting Dai, Zihong Yang, Zhidong Lou, Yanbing Hou, Feng Teng, Yufeng Hu

Perovskite light-emitting transistors (PeLETs) represent an emerging class of optoelectronic devices that integrate the exceptional light-emission capabilities of perovskite light-emitting diodes (PeLEDs) with the efficient charge transport properties of field-effect transistors (FETs). This integration facilitates simplified fabrication, enhanced current densities, and stable charge mobility, making PeLETs highly promising for advanced display applications. Low-voltage operation and full-color emission are the primary challenges in achieving high-performance PeLETs. In this work, a PeLET structure that operates at 5 V is designed using a magnetron-sputtered Ta₂O₅ high-k dielectric layer. The influence of the hole transport layer's energy level structure and mobility on the performance of the light-emitting transistor is investigated. By tuning the perovskite bandgap, the PeLETs with emission in the red, green, and blue spectral regions have been achieved. The optimized red-, green-, and blue-emitting PeLETs exhibit charge carrier mobilities of 0.41 cm²V⁻¹s⁻¹, 1.00 cm²V⁻¹s⁻¹, and 0.51 cm²V⁻¹s⁻¹, with corresponding threshold voltages of 0.27 V, 0.64 V, and 0.46 V, respectively. This work advances the development of PeLETs by demonstrating a multilayer device architecture that enhances charge carrier dynamics and expands emission tunability. These findings provide a promising path toward low-voltage PeLETs for next-generation display technologies.

钙钛矿发光晶体管（PeLETs）是一类新兴的光电器件，它将钙钛矿发光二极管（PeLEDs）的卓越发光能力与场效应晶体管（fet）的高效电荷传输特性结合在一起。这种集成有助于简化制造，增强电流密度和稳定的电荷迁移率，使PeLETs在高级显示应用中非常有前途。低压操作和全彩发射是实现高性能PeLETs的主要挑战。在这项工作中，使用磁控溅射Ta2O5高k介电层设计了工作在5v的PeLET结构。研究了空穴输运层的能级结构和迁移率对发光晶体管性能的影响。通过调整钙钛矿带隙，可以获得在红、绿、蓝光谱区域发射的PeLETs。优化后的红色、绿色和蓝色PeLETs的载流子迁移率分别为0.41、1.00和0.51 cm2V−1s−1，相应的阈值电压分别为0.27 V、0.64 V和0.46 V。这项工作通过展示一种多层器件架构来推进PeLETs的发展，该架构增强了载流子动力学并扩展了发射可调性。这些发现为下一代显示技术的低压PeLETs提供了一条有希望的道路。

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引用次数: 0

TADF and hyperfluorescence: Pushing the frontiers of organic optoelectronics TADF和高荧光：推动有机光电子学的前沿

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-19 DOI: 10.1016/j.orgel.2025.107240

Chihaya Adachi, Lian Duan

引用次数: 0

Red thermally activated delayed fluorescence materials for high-performance organic light-emitting diode 高性能有机发光二极管用红色热激活延迟荧光材料

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-11 DOI: 10.1016/j.orgel.2025.107238

Jiaxuan Wang , Chao Jiang , Chi Cao , Xuming Zhuang , Baoyan Liang , Yue Wang , Hai Bi

Developing red thermally activated delayed fluorescence (TADF) materials is challenging but crucial for realizing full-color displays and solid-state lighting systems. In this work, we propose a novel design strategy that connects two emitting units to a phenyl ring to create efficient red luminescent materials. Two D-A-π-A-D type TADF molecules with mild-twist structures, m-DTPAQCN and p-DTPAQCN, were designed and synthesized. These molecules incorporate an electron-withdrawing acceptor of quinoxaline-6,7-dicarbonitrile group and an electron-donating donor of triphenylamine group. Both m-DTPAQCN and p-DTPAQCN exhibit red emissions in toluene solutions at 607 nm and 614 nm, respectively, and in doped films at 618 nm and 627 nm. The doped films, prepared with varying doping concentrations, demonstrate excellent photoluminescence quantum yields (PLQYs) ranging from 60.10 % to 84.70 %. The corresponding organic light-emitting diodes (OLEDs) employing m-DTPAQCN and p-DTPAQCN as emitters present efficient red electroluminescence with a maximum external quantum efficiency of 17.37 % and 20.05 %, respectively. This work provides a new and effective strategy for designing efficient red TADF molecules, offering significant potential for application in OLEDs.

开发红色热激活延迟荧光（TADF）材料具有挑战性，但对于实现全彩显示和固态照明系统至关重要。在这项工作中，我们提出了一种新的设计策略，将两个发射单元连接到苯基环上，以创建高效的红色发光材料。设计合成了两个D-A-π-A-D型轻扭结构的TADF分子m-DTPAQCN和p-DTPAQCN。这些分子包含喹啉-6,7-二腈基的吸电子受体和三苯胺基的供电子给体。m-DTPAQCN和p-DTPAQCN在甲苯溶液中分别表现出607 nm和614 nm的红光发射，在掺杂膜中表现出618 nm和627 nm的红光发射。不同掺杂浓度制备的掺杂薄膜具有优异的光致发光量子产率（PLQYs），范围为60.10%至84.70%。采用m-DTPAQCN和p-DTPAQCN作为发射体的有机发光二极管（oled）显示出高效的红色电致发光，最大外量子效率分别为17.37%和20.05%。这项工作为设计高效的红色TADF分子提供了一种新的有效策略，在oled中具有重要的应用潜力。

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引用次数: 0

Performance improvement of ZnO nanorod arrays / ZnO quantum dots / P3HT hybrid photodetector by Au nanoparticles 金纳米颗粒对ZnO纳米棒阵列/ ZnO量子点/ P3HT混合光电探测器性能的改善

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-11 DOI: 10.1016/j.orgel.2025.107239

Taotao Rao , Qian Qiao , Jun Zhou , Jian Zheng , Xuan Yu , Xiaoming Yu , Cunxi Zhang , Rui Wang

Self-powered hybrid plasmonic photodetectors based on Zinc oxide (ZnO) nanorod arrays (NRAs)/ZnO quantum dots (QDs)/poly(3-hexylthiophene) (P3HT) incorporated with gold nanoparticles (Au NPs) were successfully fabricated. The photoresponse performance of the ZnO NRAs/ZnO QDs/P3HT hybrid photodetectors was enhanced by the incorporation of Au NPs. The optimal ZnO NRAs/ZnO QDs-Au(250) NPs/P3HT organic-inorganic hybrid plasmonic photodetector exhibits a photo-to-dark current ratio of 2450, a responsivity of 46 mA/W and a specific detectivity of 1.88 × 10¹¹ Jones under 525 nm light illumination and zero bias voltage. This study offers novel insights into the utilization of metal nanoparticles to enhance the performance of organic-inorganic hybrid photodetectors.

成功制备了氧化锌（ZnO）纳米棒阵列(NRAs)/ZnO量子点(QDs)/聚3-己基噻吩（P3HT）与金纳米颗粒（Au NPs）结合的自供电混合等离子体光电探测器。Au NPs的加入提高了ZnO NRAs/ZnO QDs/P3HT复合光电探测器的光响应性能。最佳ZnO NRAs/ZnO QDs-Au(250) NPs/P3HT有机-无机杂化等离子体光电探测器在525 nm光照和零偏置电压下的光暗比为2450，响应率为46 mA/W，比探测率为1.88 × 1011 Jones。该研究为利用金属纳米颗粒提高有机-无机杂化光电探测器的性能提供了新的见解。

引用次数: 0

Study on the influence of hole transport materials on the response speed of organic photodetectors by time-of-flight technique 利用飞行时间技术研究空穴传输材料对有机光电探测器响应速度的影响

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-08 DOI: 10.1016/j.orgel.2025.107237

Jinghao Fu, Dezhi Yang, Ji Li, Guo He, Dechao Guo, Rentao Dong, Dongge Ma

Organic photodetectors (OPDs) offer some advantages, including flexibility, cost-effectiveness, wavelength tunability, and lightweight, making them compelling alternatives to inorganic photodetectors across numerous applications. However, the low charge carrier mobility of organic semiconductors greatly limits the response speed of OPDs, which remains a significant challenge to further enhance the response speed of these devices to meet the demands of communication and other fields. Previous studies have mainly focused on the efforts to enhance the response speed, but the relationship between response speed and charge carrier transport characteristics has been rarely explored. In this study, we employ the time-of-flight technique to investigate the mobility characteristics of different hole transport layer materials, MCBP and TCTA, and their impact on response speed of the resulting OPDs. The OPD utilizing TCTA as the hole transport layer has achieved a -3dB bandwidth of up to 85 MHz. Compared with MCBP with higher mobility, the stronger transport dispersion of TCTA makes it a more suitable choice for fast-response OPDs, suggesting that the response speed is not solely determined by the mobility of charge carrier transport layer materials.

有机光电探测器（opd）具有灵活性、成本效益、波长可调性和重量轻等优点，在众多应用中成为无机光电探测器的有力替代品。然而，有机半导体的低载流子迁移率极大地限制了opd的响应速度，进一步提高器件的响应速度以满足通信等领域的需求仍然是一个重大挑战。以往的研究主要集中在提高响应速度上，但很少探讨响应速度与载流子输运特性之间的关系。在这项研究中，我们采用飞行时间技术研究了不同的空穴传输层材料，MCBP和TCTA的迁移特性，以及它们对产生的opd响应速度的影响。利用TCTA作为空穴传输层的OPD实现了高达85 MHz的-3dB带宽。与迁移率较高的MCBP相比，TCTA较强的迁移色散使其更适合用于快速响应opd，这表明响应速度不仅仅取决于电荷载流子迁移层材料的迁移率。

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引用次数: 0

Thermally activated delayed fluorescence host materials with bulky indolocarbazole derivatives acceptors for high-performance solution-processed OLEDs 具有大体积吲哚咔唑衍生物受体的热激活延迟荧光主体材料用于高性能溶液处理oled

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-07 DOI: 10.1016/j.orgel.2025.107236

Xixuan Wang, Guimin Zhao, Wei Jiang, Yueming Sun

The design and development of large steric-hindrance host materials can effectively solve the quenching of triplet excitons, so as to improve the utilization of excitons and the performance of organic light-emitting diodes (OLED) devices. In this work, four large volume thermally activated delayed fluorescence (TADF) host materials were synthesized using triazine derivatives as electron acceptors and indolocarbazole derivatives as electron donors. Systematic studies demonstrated that introducing tert-butyl carbazole into indolocarbazole derivatives not only increased the steric hindrance of the molecule but also improved its thermodynamic stability. The decomposition temperatures (T_d) of TRZ-tCzICz and MeTRZ-tCzICz reached 449 °C and 481 °C, and there was no significant glassing transition temperature (T_g) in the range of 20–200 °C. The strategy of introducing methyl into triazine effectively separated HOMO and LUMO of molecule, resulting in smaller singlet-triplet splitting (ΔEST) and larger reverse intersystem crossing rates (k_RISC). Among the four molecules, the k_RISC of TRZ-tCzICz and MeTRZ-tCzICz reached 2.07 × 10⁶ s⁻¹ and 2.16 × 10⁶ s⁻¹, respectively. All four synthesized molecules had relatively high triplet energy levels and can serve as host materials for green TADF compounds. With 4CzIPN as the dopant, the solution processable OLED devices based the four compounds as the host materials achieved maximum external quantum efficiency (EQE_max) of 11.13 %.

设计和开发大空间位阻主体材料可以有效解决三重态激子的猝灭问题，从而提高激子的利用率和有机发光二极管（OLED）器件的性能。本文以三嗪衍生物为电子受体，吲哚咔唑衍生物为电子给体，合成了四种大体积热激活延迟荧光（TADF）宿主材料。系统研究表明，在吲哚咔唑衍生物中引入叔丁基咔唑，不仅增加了分子的位阻，而且提高了分子的热力学稳定性。TRZ-tCzICz和MeTRZ-tCzICz的分解温度（Td）分别达到449℃和481℃，在20 ~ 200℃范围内没有明显的玻璃化转变温度（Tg）。在三嗪中引入甲基的策略有效地分离了分子的HOMO和LUMO，从而减小了单重态-三重态分裂（ΔEST）和较大的逆向系统间交叉速率（kRISC）。其中TRZ-tCzICz和MeTRZ-tCzICz的kRISC分别达到2.07 × 106 s−1和2.16 × 106 s−1。这四种合成的分子都具有较高的三重态能级，可以作为绿色TADF化合物的宿主材料。以4CzIPN为掺杂剂，基于这四种化合物为主体材料的溶液可加工OLED器件的最大外量子效率（EQEmax）为11.13%。

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引用次数: 0

Efficient post-treatment strategy for enhancing the performance and stability of the inverted perovskite solar cells based on Boc-D-Val-OH 提高Boc-D-Val-OH倒置钙钛矿太阳能电池性能和稳定性的有效后处理策略

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-01 DOI: 10.1016/j.orgel.2025.107228

Fu Liu , Yijun Zhu , Jian Xiong , Zhen He , Yuanwei Pu , Yongchao Liang , Qiaofei Hu , Yinqi Zuo , Qiyu Yang , Dongjie Wang , Yu Huang , Qiaogan Liao , Zheling Zhang , Jian Zhang

Recombination losses from perovskite/fullerene interface issues significantly limit the performance and stability of inverted perovskite solar cells (PSCs). A simple post-treatment method based on Boc-D-Val-OH (BDVO) is developed to overcome these issues. A systematic study has been conducted on the impact of BDVO on the physical properties of the film and the device. The results confirm that BDVO post-treatment can passivate trap states of the perovskite film surface, improve contact at the perovskite/fullerene interface, and enhance the built-in interface electrical field of the device. That improvements lead to enhanced carrier transport dynamics, as well as improves the performance and stability of PSCs. A relatively higher power conversion efficiency (PCE) of 23.02 % is achieved by BDVO post-treatment. Additionally, after storage in air (30–40 RH%) for 264 h (12 days) and in N₂ for 312 h (13 days), the PCE of the BDVO devices can remain at 90 % and 95 % of their initial values, respectively, while the control devices under the same exposure conditions only maintain 83 % and 88 % of their initial PCE values. The study sheds light on the pathway for perovskite/fullerene interface material selection and design, aimed at enhancing device performance and stability through streamlined post-treatment.

钙钛矿/富勒烯界面问题导致的复合损失严重限制了倒钙钛矿太阳能电池（PSCs）的性能和稳定性。为了克服这些问题，开发了一种基于Boc-D-Val-OH （BDVO）的简单后处理方法。系统地研究了BDVO对薄膜和器件物理性能的影响。结果证实，BDVO后处理可以钝化钙钛矿膜表面的陷阱态，改善钙钛矿/富勒烯界面处的接触，增强器件的内置界面电场。这种改进增强了载流子传输动力学，并提高了psc的性能和稳定性。BDVO后处理的功率转换效率（PCE）相对较高，达到23.02%。此外，在空气（30-40 RH%）中储存264 h（12天）和在N2中储存312 h（13天）后，BDVO装置的PCE分别保持在其初始值的90%和95%，而在相同暴露条件下的对照装置仅保持其初始PCE值的83%和88%。该研究揭示了钙钛矿/富勒烯界面材料选择和设计的途径，旨在通过简化后处理提高器件的性能和稳定性。

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引用次数: 0

High-CRI warm white OLEDs based on TADF-Doped Exciplex Co-host Structure enabled by efficient reverse intersystem crossing 基于tadf掺杂激复共主结构的高显色温白光oled的高效反向系统间交叉

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-03-01 DOI: 10.1016/j.orgel.2025.107229

Zeyu Jia, Xiangqiong Xie, Zhenyong Guo, Zhiqi Kou

In this work, we present a high-performance warm white organic light-emitting diode (WOLED) achieving a maximum color rendering index (CRI) of 95, based on a novel TADF-Doped Exciplex Co-host Structure. The device design integrates a blue exciplex (mCP:PO-T2T) as the host material, sensitizing ultrathin phosphorescent layers emitting green, yellow, and red light. By systematically varying the thickness of spacer and ultrathin layers, the position of the exciton recombination zone was finely tuned, revealing its critical role in exciton transport dynamics and energy transfer efficiency. To optimize exciton transport pathways, the TADF material 4CzTPN was strategically incorporated into the spacer layers. This incorporation significantly altered the exciton transfer mechanism by facilitating efficient reverse intersystem crossing (RISC) and promoting Förster energy transfer from the exciplex to phosphorescent emitters. Consequently, this approach not only reduces triplet exciton density, mitigating Dexter transfer losses, but also enhances exciton utilization efficiency. As a result, the WOLED achieves warm white light emission with a high CRI closely aligned with the Planckian locus on the CIE chromaticity diagram. These findings demonstrate the transformative potential of the TADF-Doped Exciplex Co-host Structure for developing efficient and color-stable WOLEDs, paving the way for next-generation lighting and display technologies.

在这项工作中，我们提出了一种高性能的暖白色有机发光二极管（WOLED），该二极管基于一种新型的tadf掺杂Exciplex共宿主结构，其显色指数（CRI）最高可达95。该器件设计集成了蓝色激光体（mCP:PO-T2T）作为主体材料，敏化超薄磷光层，发出绿色、黄色和红色光。通过系统地改变间隔层和超薄层的厚度，可以很好地调整激子复合区的位置，揭示其在激子输运动力学和能量传递效率中的关键作用。为了优化激子输运途径，将TADF材料4CzTPN策略性地掺入间隔层中。这种结合通过促进有效的反向系统间交叉（RISC）和促进Förster从激子复合物到磷光发射器的能量转移，显著改变了激子转移机制。因此，该方法不仅降低了三重态激子密度，减轻了Dexter转移损失，而且提高了激子的利用效率。因此，WOLED实现了温暖的白光发射，具有高显色指数，与CIE色度图上的普朗克轨迹密切相关。这些发现证明了tadf掺杂Exciplex共宿主结构在开发高效和色彩稳定的WOLEDs方面的变革潜力，为下一代照明和显示技术铺平了道路。

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引用次数: 0