Pub Date : 2025-06-14DOI: 10.1016/j.orgel.2025.107285
Rana Shahid Mahmood , Weicun Chu , Riming Nie
Although perovskite solar cells (PSCs) are growing rapidly to achieve higher photovoltaic performance, their practical applications have still been obstructed by stability issues in humid atmosphere. Here, we adopted an additive engineering (one additive in two layers) strategy by doping organic-inorganic dual nature additive lithium difluoro(oxalato)borate (Li-DFOB) into lead iodide (PbI2) and Spiro-OMeTAD, resulting in enhanced photovoltaic performance and long-term stability of PSCs. The incorporation of Li-DFOB can enhance perovskite crystal quality and moisture resistance of the hole transporting layer by suppressing ion migration, charge carrier recombination, and reducing hysteresis. A replacement of Li-TFSI with a stable Li-DFOB salt in Spiro-OMeTAD can increase the hydrophobicity of the hole transporting layer (HTL) by preventing degradation in humid air and improve the charge carrier transportation. The prepared devices can maintain 98.7 % of their initial power conversion efficiency (PCE), 24.07 % after 624 h in ambient conditions. This additive engineering strategy recommends such dual-nature additives to enhance the performance and stability of PSCs, leading to water-resistant devices.
{"title":"Crystallization regulation and ion migration suppression enabled by bifunctional lithium difluoro (oxalato) borate additive for stable perovskite solar cells","authors":"Rana Shahid Mahmood , Weicun Chu , Riming Nie","doi":"10.1016/j.orgel.2025.107285","DOIUrl":"10.1016/j.orgel.2025.107285","url":null,"abstract":"<div><div>Although perovskite solar cells (PSCs) are growing rapidly to achieve higher photovoltaic performance, their practical applications have still been obstructed by stability issues in humid atmosphere. Here, we adopted an additive engineering (one additive in two layers) strategy by doping organic-inorganic dual nature additive lithium difluoro(oxalato)borate (Li-DFOB) into lead iodide (PbI<sub>2</sub>) and Spiro-OMeTAD, resulting in enhanced photovoltaic performance and long-term stability of PSCs. The incorporation of Li-DFOB can enhance perovskite crystal quality and moisture resistance of the hole transporting layer by suppressing ion migration, charge carrier recombination, and reducing hysteresis. A replacement of Li-TFSI with a stable Li-DFOB salt in Spiro-OMeTAD can increase the hydrophobicity of the hole transporting layer (HTL) by preventing degradation in humid air and improve the charge carrier transportation. The prepared devices can maintain 98.7 % of their initial power conversion efficiency (PCE), 24.07 % after 624 h in ambient conditions. This additive engineering strategy recommends such dual-nature additives to enhance the performance and stability of PSCs, leading to water-resistant devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107285"},"PeriodicalIF":2.7,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144297260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-10DOI: 10.1016/j.orgel.2025.107286
Xiaohui Li , Yan Yang , Zongcheng Su , Yu Xiong , Changjiang Chen , Long Wang , Wei Zhou , Hongjun Wang , Xiaoxin Xu
This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.
{"title":"Potential-based model for asymmetric and symmetric double-gate organic thin-film transistors","authors":"Xiaohui Li , Yan Yang , Zongcheng Su , Yu Xiong , Changjiang Chen , Long Wang , Wei Zhou , Hongjun Wang , Xiaoxin Xu","doi":"10.1016/j.orgel.2025.107286","DOIUrl":"10.1016/j.orgel.2025.107286","url":null,"abstract":"<div><div>This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107286"},"PeriodicalIF":2.7,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144279403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-04DOI: 10.1016/j.orgel.2025.107283
Denis S. Baranov , Ivan A. Molchanov , Natalia V. Kravets , Elena S. Kobeleva , Mikhail N. Uvarov , Maria A. Sandzhieva , Danil K. Aleshin , Sergey V. Makarov , Xingjian Jiang , Yong Zhang , Vladimir A. Zinov'ev , Yuri V. Gatilov , Aleksandr S. Sukhikh , Alexander E. Kurtsevich , Konstantin M. Degtyarenko , Leonid V. Kulik
2-(2-Methylphenyl)benzo[b]thiophene (MPBT) is synthesized and applied as volatile additive to PM6/Y6 active layer of organic solar cells, where PM6 is donor polymer, Y6 is non-fullerene acceptor. Contrary to usual solvent additives, MPBT is not removed from the active layer during spin-coating. However, due to volatility of MPBT, annealing at 120 °C allows for its complete removal from PM6/Y6 composite. Moreover, its morphology is markedly altered by MPBT, as it is evidenced by optical spectroscopy and atomic force microscopy. For a thin PM6/Y6 active layer (about 70 nm) cast from chlorobenzene, the optimal concentration of MPBT is 5 wt %, relative to the solvent. Use of this additive leads to improvement of short circuit current JSC and fill factor (FF), and consequently, to power conversion efficiency (PCE) increase. External quantum efficiency (EQE) is improved within the whole range of PM6:Y6 optical absorption (350–850 nm). Optical, X-ray diffraction, and atomic-force microscopy data confirm ordering of Y6 domains during MPBT volatilization, while morphology of PM6 domains is almost not altered. Space-charge limited current measurement evidences that electron mobility increases several times upon volatilization of MPBT from PM6:Y6 film, while hole mobility remains essentially unchanged. Surface free energy measurement confirms preferential miscibility of MPBT with Y6 component of the active layer rather than with PM6 component. Storage and operational stability of the solar cells processed with MPBT markedly increase. GIWAXS pattern of pristine Y6 film processed with MPBT show unusually high orientation ordering of Y6 crystallines with respect to the substrate. The novel approach based on intermediate donor:acceptor:additive ternary blend gives additional degree of control of active layer properties by selective tuning of the acceptor morphology.
{"title":"Volatile additive for selective tuning of non-fullerene acceptor morphology in the active layer of organic solar cells","authors":"Denis S. Baranov , Ivan A. Molchanov , Natalia V. Kravets , Elena S. Kobeleva , Mikhail N. Uvarov , Maria A. Sandzhieva , Danil K. Aleshin , Sergey V. Makarov , Xingjian Jiang , Yong Zhang , Vladimir A. Zinov'ev , Yuri V. Gatilov , Aleksandr S. Sukhikh , Alexander E. Kurtsevich , Konstantin M. Degtyarenko , Leonid V. Kulik","doi":"10.1016/j.orgel.2025.107283","DOIUrl":"10.1016/j.orgel.2025.107283","url":null,"abstract":"<div><div>2-(2-Methylphenyl)benzo[<em>b</em>]thiophene (MPBT) is synthesized and applied as volatile additive to PM6/Y6 active layer of organic solar cells, where PM6 is donor polymer, Y6 is non-fullerene acceptor. Contrary to usual solvent additives, MPBT is not removed from the active layer during spin-coating. However, due to volatility of MPBT, annealing at 120 °C allows for its complete removal from PM6/Y6 composite. Moreover, its morphology is markedly altered by MPBT, as it is evidenced by optical spectroscopy and atomic force microscopy. For a thin PM6/Y6 active layer (about 70 nm) cast from chlorobenzene, the optimal concentration of MPBT is 5 wt %, relative to the solvent. Use of this additive leads to improvement of short circuit current <em>J</em><sub><em>SC</em></sub> and fill factor (FF), and consequently, to power conversion efficiency (PCE) increase. External quantum efficiency (EQE) is improved within the whole range of PM6:Y6 optical absorption (350–850 nm). Optical, X-ray diffraction, and atomic-force microscopy data confirm ordering of Y6 domains during MPBT volatilization, while morphology of PM6 domains is almost not altered. Space-charge limited current measurement evidences that electron mobility increases several times upon volatilization of MPBT from PM6:Y6 film, while hole mobility remains essentially unchanged. Surface free energy measurement confirms preferential miscibility of MPBT with Y6 component of the active layer rather than with PM6 component. Storage and operational stability of the solar cells processed with MPBT markedly increase. GIWAXS pattern of pristine Y6 film processed with MPBT show unusually high orientation ordering of Y6 crystallines with respect to the substrate. The novel approach based on intermediate donor:acceptor:additive ternary blend gives additional degree of control of active layer properties by selective tuning of the acceptor morphology.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107283"},"PeriodicalIF":2.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144230719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-03DOI: 10.1016/j.orgel.2025.107284
Norio Onojima, Ryousei Matsumoto, Kanta Hatano, Naoki Koremura
Toward the establishment of low-cost manufacturing, ohmic contact formation techniques of organic devices should be developed without use of noble metals. In this study, organic diodes based on poly(3-hexylthiophene-2,5-diyl) (P3HT) were fabricated on FTO/glass substrates using non-noble metal (Al) anode electrodes and exhibited rectification behavior when depositing MoOx beneath the Al anode electrode. This suggests that an ohmic-like contact was selectively obtained due to the conduction path formed between the Fermi level of Al and charge-transfer state of P3HT. High-speed AC/DC conversion efficiency of P3HT-based rectifying diodes was investigated using a half-wave rectification circuit and compared to a commercially-available Si Schottky diode. Reduction in the rectifying characteristics of the half-wave rectification circuit using the P3HT devices with increasing the measurement frequency was discussed on the basis of equivalent circuit model.
{"title":"Low-cost fabrication of organic rectifying diodes for high-speed AC/DC conversion","authors":"Norio Onojima, Ryousei Matsumoto, Kanta Hatano, Naoki Koremura","doi":"10.1016/j.orgel.2025.107284","DOIUrl":"10.1016/j.orgel.2025.107284","url":null,"abstract":"<div><div>Toward the establishment of low-cost manufacturing, ohmic contact formation techniques of organic devices should be developed without use of noble metals. In this study, organic diodes based on poly(3-hexylthiophene-2,5-diyl) (P3HT) were fabricated on FTO/glass substrates using non-noble metal (Al) anode electrodes and exhibited rectification behavior when depositing MoO<sub>x</sub> beneath the Al anode electrode. This suggests that an ohmic-like contact was selectively obtained due to the conduction path formed between the Fermi level of Al and charge-transfer state of P3HT. High-speed AC/DC conversion efficiency of P3HT-based rectifying diodes was investigated using a half-wave rectification circuit and compared to a commercially-available Si Schottky diode. Reduction in the rectifying characteristics of the half-wave rectification circuit using the P3HT devices with increasing the measurement frequency was discussed on the basis of equivalent circuit model.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107284"},"PeriodicalIF":2.7,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-29DOI: 10.1016/j.orgel.2025.107282
Makhvela Anwer, Shiwei Yin
The complete harvesting of singlet and triplet excitons offers a pathway to surpass the spin-statistics limit of conventional fluorescent materials. This opens the door to highly efficient molecular light-emission mechanisms such as thermally activated delayed fluorescence (TADF). This TADF mechanism is aided by low singlet-triplet energy gaps (ΔEST), which are usually positive (following Hund's rule). Recent research has explored the violation of Hund's rule by inverting the excited states. Consequently, thermodynamically advantageous down conversion by the negative ΔEST eliminates the need for thermal activation and permits more effective reverse intersystem crossing (RISC), which enables solving problems of short lifetime and fast efficiency roll off of organic light emitting diode (OLED) devices. The potential uses of molecules that violate Hund's law have garnered considerable interest in OLEDs, bioimaging, and photocatalysis. Therefore, the success of INVEST materials holds the potential to enable the next generation of OLEDs. This mini-review focuses on significant progress in INVEST materials (molecular design and photophysical properties). Furthermore, the outlook and prospects for future developments in INVEST materials are described.
{"title":"Recent progress and prospects of inverted singlet-triplet energy gap (INVEST) materials in OLEDs","authors":"Makhvela Anwer, Shiwei Yin","doi":"10.1016/j.orgel.2025.107282","DOIUrl":"10.1016/j.orgel.2025.107282","url":null,"abstract":"<div><div>The complete harvesting of singlet and triplet excitons offers a pathway to surpass the spin-statistics limit of conventional fluorescent materials. This opens the door to highly efficient molecular light-emission mechanisms such as thermally activated delayed fluorescence (TADF). This TADF mechanism is aided by low singlet-triplet energy gaps (ΔE<sub>ST</sub>), which are usually positive (following Hund's rule). Recent research has explored the violation of Hund's rule by inverting the excited states. Consequently, thermodynamically advantageous down conversion by the negative ΔE<sub>ST</sub> eliminates the need for thermal activation and permits more effective reverse intersystem crossing (RISC), which enables solving problems of short lifetime and fast efficiency roll off of organic light emitting diode (OLED) devices. The potential uses of molecules that violate Hund's law have garnered considerable interest in OLEDs, bioimaging, and photocatalysis. Therefore, the success of INVEST materials holds the potential to enable the next generation of OLEDs. This mini-review focuses on significant progress in INVEST materials (molecular design and photophysical properties). Furthermore, the outlook and prospects for future developments in INVEST materials are described.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107282"},"PeriodicalIF":2.7,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-29DOI: 10.1016/j.orgel.2025.107280
Hui Zhang , Zunxian Yang , Ye Chen , Jiaxiang Wang , Jiajie Hong , Yuting Bai , Xudong Jiang , Benfang Liu , Yue Chen , Xuanyao Song , Zhezhou Fang , Jinzhu Gao , Zheyu Zhou , Runsen Yu , Zhiyu Yuan , Tailiang Guo , Yun Ye , Yongyi Chen , Zhenzhen Weng
Photoelectronic transistors had attracted significant attention in the field of neuromorphic computing, as they integrated efficient sensing, memory, and processing capabilities into a single device. The design of multilayer heterostructures offered novel opportunities for developing multifunctional optoelectronic devices, particularly for neuromorphic optoelectronic devices that required integrated non-volatile memory and excellent optical response characteristics. TIPS-pentacene films with High-quality were successfully prepared through liquid surface growth and evaporation crystallization, and these films were further transferred to target substrates for heterostructure devices. Based on this strategy, a CsPbBr3/PMMA/TIPS-pentacene heterojunction photoelectronics transistor was developed to overcome the limitations of traditional solution-based strategies for preparing multilayer structures. Owing to the ultra-thin and high-quality TIPS-pentacene conductive layer and its excellent interface contact with the underlying film, the composite transistor demonstrated high electrical properties, including high mobility and low subthreshold swing. It exhibited typical synaptic characteristics such as pulse-promotion facilitation (PPF). The device also delivered excellent non-volatile memory characteristics, with multi-state memory windows observed under different gate scanning ranges. Based on the strong gate modulation, the photoelectronic transistor array successfully simulated the dark and bright adaptation behaviors of the human visual system. Therefore, the preparation strategy for multifunctional photoelectronic transistors proposed in this work provided an unique perspective for the next generation of artificial neural systems.
{"title":"Multifunctional heterojunction synaptic transistors based on transferred organic semiconductor crystals for superior visual adaptation","authors":"Hui Zhang , Zunxian Yang , Ye Chen , Jiaxiang Wang , Jiajie Hong , Yuting Bai , Xudong Jiang , Benfang Liu , Yue Chen , Xuanyao Song , Zhezhou Fang , Jinzhu Gao , Zheyu Zhou , Runsen Yu , Zhiyu Yuan , Tailiang Guo , Yun Ye , Yongyi Chen , Zhenzhen Weng","doi":"10.1016/j.orgel.2025.107280","DOIUrl":"10.1016/j.orgel.2025.107280","url":null,"abstract":"<div><div>Photoelectronic transistors had attracted significant attention in the field of neuromorphic computing, as they integrated efficient sensing, memory, and processing capabilities into a single device. The design of multilayer heterostructures offered novel opportunities for developing multifunctional optoelectronic devices, particularly for neuromorphic optoelectronic devices that required integrated non-volatile memory and excellent optical response characteristics. TIPS-pentacene films with High-quality were successfully prepared through liquid surface growth and evaporation crystallization, and these films were further transferred to target substrates for heterostructure devices. Based on this strategy, a CsPbBr<sub>3</sub>/PMMA/TIPS-pentacene heterojunction photoelectronics transistor was developed to overcome the limitations of traditional solution-based strategies for preparing multilayer structures. Owing to the ultra-thin and high-quality TIPS-pentacene conductive layer and its excellent interface contact with the underlying film, the composite transistor demonstrated high electrical properties, including high mobility and low subthreshold swing. It exhibited typical synaptic characteristics such as pulse-promotion facilitation (PPF). The device also delivered excellent non-volatile memory characteristics, with multi-state memory windows observed under different gate scanning ranges. Based on the strong gate modulation, the photoelectronic transistor array successfully simulated the dark and bright adaptation behaviors of the human visual system. Therefore, the preparation strategy for multifunctional photoelectronic transistors proposed in this work provided an unique perspective for the next generation of artificial neural systems.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107280"},"PeriodicalIF":2.7,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144240432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-26DOI: 10.1016/j.orgel.2025.107281
Xuechen Wang , Wei Li , Jinjin Zhao , Fuquan Wang , Lei Fan , Zixun Chen , Ping Wang , Yujia Zhai , Zhixiang Gao , Wenshan Qu , Hua Wang , Bin Wei
Digital organic memristors have potential in the field of data storage technology due to their advantages of superintegration, simple preparation process, flexibility and low power consumption. However, it's difficult to achieve low operating voltages while maintaining strong endurance. We fabricated digital organic memristors based on poly(3-hexylthiophene) (P3HT) doped with 1,3,5-tri(m-pyridin-3-yl-phenyl) benzene (TmPyPB) or 1,3,5-tris(p-pyridin-3-yl-phenyl) benzene (TpPyPB), which achieve both strong endurance and low operating voltages. The device exhibits a current on/off ratio (Ion/off) of 104, long retention time of 104 s, strong endurance of 250 cycles, and response time of 500 ms. Their set voltage (Vset) and reset voltage (Vreset) were frozen in 1.85 V and −2.69 V, respectively. The resistive switching mechanism was the trapping and detrapping process of charge trap induced by TmPyPB or TpPyPB. In addition, we constructed a 10 × 10 memristor array, realized alphabetic information storage and basic logic operations, demonstrate the device has good reliability, current stability, and uniform performance. This study provides an effective solution for realizing digital organic memristors with high durability and low operating voltage.
{"title":"Digital organic memristor based on P3HT doped with organic small molecules TmPyPB/ TpPyPB","authors":"Xuechen Wang , Wei Li , Jinjin Zhao , Fuquan Wang , Lei Fan , Zixun Chen , Ping Wang , Yujia Zhai , Zhixiang Gao , Wenshan Qu , Hua Wang , Bin Wei","doi":"10.1016/j.orgel.2025.107281","DOIUrl":"10.1016/j.orgel.2025.107281","url":null,"abstract":"<div><div>Digital organic memristors have potential in the field of data storage technology due to their advantages of superintegration, simple preparation process, flexibility and low power consumption. However, it's difficult to achieve low operating voltages while maintaining strong endurance. We fabricated digital organic memristors based on poly(3-hexylthiophene) (P3HT) doped with 1,3,5-tri(m-pyridin-3-yl-phenyl) benzene (TmPyPB) or 1,3,5-tris(p-pyridin-3-yl-phenyl) benzene (TpPyPB), which achieve both strong endurance and low operating voltages. The device exhibits a current on/off ratio (<em>I</em><sub><em>on/off</em></sub>) of 10<sup>4</sup>, long retention time of 10<sup>4</sup> s, strong endurance of 250 cycles, and response time of 500 ms. Their set voltage (<em>V</em><sub><em>set</em></sub>) and reset voltage (<em>V</em><sub><em>reset</em></sub>) were frozen in 1.85 V and −2.69 V, respectively. The resistive switching mechanism was the trapping and detrapping process of charge trap induced by TmPyPB or TpPyPB. In addition, we constructed a 10 × 10 memristor array, realized alphabetic information storage and basic logic operations, demonstrate the device has good reliability, current stability, and uniform performance. This study provides an effective solution for realizing digital organic memristors with high durability and low operating voltage.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107281"},"PeriodicalIF":2.7,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144169571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-25DOI: 10.1016/j.orgel.2025.107277
Qinjun Sun , Jian Zhao , Hua Ding , Xiaoqian Wang , Qianwen Hu , LiYan Gao , Yuying Hao
With high flexibility, conductivity and transparency, metal nanotroughs (NTRs) are considered to be the most promising candidates for flexibility transparent electrode. Here, we report metal NTR films fabricated by electro-spun and thermal evaporation. By optimizing steam treatment time, copper-silver ratio, coverage rate, and transfer process, smooth and continuous metal NTR films were obtained. The Cu/Ag NTR-polyacrylonitrile (PAN) film displayed superior photoelectric properties: transmitted 94.4 % of visible light (550 nm), showed a low sheet resistance of 2.48 Ω/□ and a very high quality factor of 2.27 × 10−1 (Ω/□)−1. Meanwhile, the relative change rate of resistance was less than 0.002 under a bending radius of 5 mm after 10,000 cycles. The results indicate that composite metal nanotroughs provide a new way for the preparation of high performance flexible transparent electrode.
{"title":"Cu/Ag composite nanotrough embedded polyacrylonitrile film: Transparent conducting electrodes with excellent flexibility and a high quality factor","authors":"Qinjun Sun , Jian Zhao , Hua Ding , Xiaoqian Wang , Qianwen Hu , LiYan Gao , Yuying Hao","doi":"10.1016/j.orgel.2025.107277","DOIUrl":"10.1016/j.orgel.2025.107277","url":null,"abstract":"<div><div>With high flexibility, conductivity and transparency, metal nanotroughs (NTRs) are considered to be the most promising candidates for flexibility transparent electrode. Here, we report metal NTR films fabricated by electro-spun and thermal evaporation. By optimizing steam treatment time, copper-silver ratio, coverage rate, and transfer process, smooth and continuous metal NTR films were obtained. The Cu/Ag NTR-polyacrylonitrile (PAN) film displayed superior photoelectric properties: transmitted 94.4 % of visible light (550 nm), showed a low sheet resistance of 2.48 Ω/□ and a very high quality factor of 2.27 × 10<sup>−1</sup> (Ω/□)<sup>−1</sup>. Meanwhile, the relative change rate of resistance was less than 0.002 under a bending radius of 5 mm after 10,000 cycles. The results indicate that composite metal nanotroughs provide a new way for the preparation of high performance flexible transparent electrode.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107277"},"PeriodicalIF":2.7,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The aims of this study is to investigate the charge transport and Non-Linear Optical (NLO) responses of Chen and Shen (2017), Xiao et al. (2021), Hoffmann (2014), Liégeois and Champagne (2012), Zou et al. (2021) and Wang et al. (2019) [7,9,11,13,15,17]Helicenes. The computational framework DFT/B3LYP/6-311G (d,p) methodology ties the highlights to the computational framework in analyzing the optoelectronic properties and NLO parameters of the Helicenes series. The TD-DFT calculations with same level are utilized to mimic the absorption properties from ground to excited state. The numerical ranges for absorption maxima (370–465 nm) and energy gaps () are clearly stated, offering precise insight into the benzene rings chiroptical succession. Ionization potential (I.P.), electron affinity (E.A.), reorganization energies (λ), frontier molecular orbitals (FMOs) and Nucleus Independent Chemical Shift (NICS) are evaluated for the reported Helicenes. The calculated λh and λe decreases with increasing helicene size and ranges from 236 to 101 meV and 247-213 meV, respectively. The static and dynamic first and second hyperpolarizabilities connects the charge transport properties (λh < λe) to the potential NLO optical responses. Hyperpolarizabilities in the order of 10−24 to 10−31 esu, suggest these Carbo [n]Helicenes as promising candidates for advanced NLO materials.
{"title":"Understanding of charge transport and non-linear optical responses into π-extended Carbo[n]Helicenes for organic optoelectronic applications","authors":"Vipin Kumar , Simplice Koudjina , Guy Y.S. Atohoun , Prabhakar Chetti","doi":"10.1016/j.orgel.2025.107279","DOIUrl":"10.1016/j.orgel.2025.107279","url":null,"abstract":"<div><div>The aims of this study is to investigate the charge transport and Non-Linear Optical (NLO) responses of Chen and Shen (2017), Xiao et al. (2021), Hoffmann (2014), Liégeois and Champagne (2012), Zou et al. (2021) and Wang et al. (2019) [7,9,11,13,15,17]<strong>Helicenes</strong>. The computational framework DFT/B3LYP/6-311G (d,p) methodology ties the highlights to the computational framework in analyzing the optoelectronic properties and NLO parameters of the Helicenes series. The TD-DFT calculations with same level are utilized to mimic the absorption properties from ground to excited state. The numerical ranges for absorption maxima (370–465 nm) and energy gaps (<span><math><mrow><msub><mrow><mo>Δ</mo><mi>E</mi></mrow><mrow><mi>g</mi><mi>a</mi><mi>p</mi></mrow></msub></mrow></math></span>) are clearly stated, offering precise insight into the benzene rings chiroptical succession. Ionization potential (I.P.), electron affinity (E.A.), reorganization energies (λ), frontier molecular orbitals (FMOs) and Nucleus Independent Chemical Shift (NICS) are evaluated for the reported Helicenes. The calculated λ<sub>h</sub> and λ<sub>e</sub> decreases with increasing helicene size and ranges from 236 to 101 meV and 247-213 meV, respectively. The static and dynamic first and second hyperpolarizabilities connects the charge transport properties (λ<sub>h</sub> < λ<sub>e</sub>) to the potential NLO optical responses. Hyperpolarizabilities in the order of 10<sup>−24</sup> to 10<sup>−31</sup> esu, suggest these Carbo [n]Helicenes as promising candidates for advanced NLO materials.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107279"},"PeriodicalIF":2.7,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144146783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-20DOI: 10.1016/j.orgel.2025.107276
Xiaogang Chen , Aohuan Shi , Kailiang Bai , Wenshu Chen , Yi Long , Yao Li , Feiping Lu
Multiplication-type organic photodetectors exhibit advantages such as high gain, broad spectral response, flexibility, and low cost, making them promising candidates for applications in weak light detection, biomedical imaging, wearable devices, and optical communication. To explore the multiplication mechanism of single-carrier-transport-based multiplication-type organic photodetectors, this study has fabricated electron trap-type organic photodetectors with a structure of ITO/PEDOT: PSS/Active-layer/Al using the solution spin-coating method, and the active layers(ACL) were composed of binary blends of classical systems of P3HT:PC61BM (100:1, wt/wt), PBDB-T: ITIC (100:1, wt/wt), or PTB7:PC71BM (100:1, wt/wt). The absorption spectra of the active layers and the external quantum efficiency of the devices were measured, and the light intensity distribution and the distribution of photogenerated charge carriers in the devices were simulated and calculated. By comparing the absorption spectra of the active layers, the external quantum efficiency of the devices, and the distribution curve of photo-generated electrons near the Al electrode, it can be concluded that the multiplication effect in the single-carrier-transport-based multiplication-type organic photodetector is explained by the quantum tunneling injection of holes into the external circuit, which is induced by charge trapped by the interface trap near the aluminum electrode. This study provides valuable insights into the multiplication mechanism of multiplication-type organic photodetectors, offering a theoretical basis for the development and fabrication of high-performance multiplication-type organic photodetectors.
{"title":"Research on the multiplication mechanism of single-carrier transport-based multiplication-type organic photodetector","authors":"Xiaogang Chen , Aohuan Shi , Kailiang Bai , Wenshu Chen , Yi Long , Yao Li , Feiping Lu","doi":"10.1016/j.orgel.2025.107276","DOIUrl":"10.1016/j.orgel.2025.107276","url":null,"abstract":"<div><div>Multiplication-type organic photodetectors exhibit advantages such as high gain, broad spectral response, flexibility, and low cost, making them promising candidates for applications in weak light detection, biomedical imaging, wearable devices, and optical communication. To explore the multiplication mechanism of single-carrier-transport-based multiplication-type organic photodetectors, this study has fabricated electron trap-type organic photodetectors with a structure of ITO/PEDOT: PSS/Active-layer/Al using the solution spin-coating method, and the active layers(ACL) were composed of binary blends of classical systems of P3HT:PC<sub>61</sub>BM (100:1, wt/wt), PBDB-T: ITIC (100:1, wt/wt), or PTB7:PC<sub>71</sub>BM (100:1, wt/wt). The absorption spectra of the active layers and the external quantum efficiency of the devices were measured, and the light intensity distribution and the distribution of photogenerated charge carriers in the devices were simulated and calculated. By comparing the absorption spectra of the active layers, the external quantum efficiency of the devices, and the distribution curve of photo-generated electrons near the Al electrode, it can be concluded that the multiplication effect in the single-carrier-transport-based multiplication-type organic photodetector is explained by the quantum tunneling injection of holes into the external circuit, which is induced by charge trapped by the interface trap near the aluminum electrode. This study provides valuable insights into the multiplication mechanism of multiplication-type organic photodetectors, offering a theoretical basis for the development and fabrication of high-performance multiplication-type organic photodetectors.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107276"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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