Artificial spiking neurons, integral to the functionality of spiking neural networks, are designed to mimic the information transmission via discrete spikes in biological nervous systems. Traditional approaches that necessitate the charging of capacitors and the inclusion of discharge circuits for neuron membrane potential integration and leakage, present challenges in terms of cost and space efficiency. To overcome the challenges, this work proposes a hardware leaky integrate-and-fire neuron based on organic thin-film transistors. Under the electric field, the ion dynamics in the gate electrolyte can mimic the processes of membrane potential integration, leakage, and reset in spiking neurons. The convolutional spiking neural networks composed of such organic spiking neurons achieves excellent recognition rates (∼97.26 %) on the MNIST dataset. This indicates that the organic spiking neuron has enormous potential in next-generation non-von Neumann neuromorphic computing.
Through attaching electron donors to the 4, 6-positions of dibenzo[b,d]thiophene-S,S-dioxide (DBTDO), three organic emitters (SO-OZ, SO-AD and SO-CZ) with D-A-D configuration have been designed and synthesized. They not only show high thermal stability with decomposition temperature (Td) higher than 460 °C, but also exhibit photoluminescent quantum yield (PLQY) as high as 0.9. Despite that SO-CZ with carbazole unit as electron donor cannot furnish thermally activated delayed fluorescence (TADF) emission, both SO-OZ with 10H-phenoxazine as electron donor and SO-AD bearing electron donor of 9,9-dimethylacridine exhibit typical TADF behaviors due to their small energy difference between S1 and T1 excited states (ΔEST). Critically, SO-OZ can show very fast revers intersystem crossing (RISC) process with rate constant of RISC (kRISC) ca. 1.8 × 106 s−1. The cyclic voltammetry (CV) results indicate their decent electrochemical stability by showing reversible oxidation and reduction processes. When doped into the emission layer of organic light-emitting diodes (OLEDs), they can show good potential as highly efficient emitters, showing electroluminescent efficiencies of the maximum current efficiency (CE) of 53.4 cd A−1, the maximum power efficiency (PE) of 52.4 lm W−1 and the maximum external quantum efficiency (EQE) of 20.5 %. These encouraging results can provide critical information for developing highly efficient TADF emitters based on DBTDO electron acceptor.