Pub Date : 2025-08-18DOI: 10.1016/j.orgel.2025.107324
Kaiwen Lin , Zhaoji Xin , Guiliang Tan , Yeyi Lei , Yufei Zhao , Xiaoge Liu , Yulian Liu , Dong Yuan , Hao Liu , Liangying Wang
In this work, two donor-acceptor-donor (D-A-D) type electrochromic conjugated polymers were prepared upon electrochemical oxidation through their precursors employed thiophenes as the donor units and benzothiazole as the acceptor unit. The conjugated chain length effects of the polymers’ electrochemical and electrochromic properties were carefully examined. As the conjugated chain length increases, both precursors exhibited reduced the HOMO-LUMO energy gap and red-shifted UV–Vis absorption and fluorescence spectra. Both polymers displayed n-doping and p-doping process with excellent redox stability, PBT-4T retained 94.17 % of its original electroactivity, which is higher than that of PBT-2T (92.86 %). Meanwhile, both polymers exhibited reversible changes in UV–Vis absorption spectra under voltage drive of 0 V–1.8 V, accompanied by color changes from light pink to black-gray (PBT-2T) and from purple to dark brown (PBT-4T). PBT-2T showed highest optical contrast of 41 % at 750 nm and fastest response time of 0.2 s for the oxidation process at 528 nm because of porous structure, which undoubtedly facilitates the ingress and egress of ions. The varying the π-conjugated chain length from bithiophene to quaterthiophene strategy may provide a new research idea to achieve high-performance electrochromic conjugated polymers.
本文以噻吩为供体单元,苯并噻唑为受体单元,通过电化学氧化法制备了两种供体-受体-供体(D-A-D)型电致变色共轭聚合物。研究了共轭链长对聚合物电化学和电致变色性能的影响。随着共轭链长度的增加,两种前驱体的HOMO-LUMO能隙减小,紫外可见吸收光谱和荧光光谱红移。两种聚合物均表现为n掺杂和p掺杂过程,具有良好的氧化还原稳定性,PBT-4T保持了94.17%的原始电活性,高于PBT-2T的92.86%。同时,在0 V - 1.8 V电压驱动下,两种聚合物的UV-Vis吸收光谱均呈现可逆变化,颜色由浅粉色变为黑灰色(PBT-2T),由紫色变为深棕色(PBT-4T)。由于PBT-2T的多孔结构,其在750 nm处的光学对比度最高,达到41%,在528 nm处的氧化反应时间最快,为0.2 s,这无疑有利于离子的进出。从二噻吩到季噻吩改变π共轭链长度的策略可能为实现高性能电致变色共轭聚合物提供新的研究思路。
{"title":"Benzothiadiazole-thiophene based conjugated Polymers: Impact of conjugated chain length on electrochromic performance","authors":"Kaiwen Lin , Zhaoji Xin , Guiliang Tan , Yeyi Lei , Yufei Zhao , Xiaoge Liu , Yulian Liu , Dong Yuan , Hao Liu , Liangying Wang","doi":"10.1016/j.orgel.2025.107324","DOIUrl":"10.1016/j.orgel.2025.107324","url":null,"abstract":"<div><div>In this work, two donor-acceptor-donor (D-A-D) type electrochromic conjugated polymers were prepared upon electrochemical oxidation through their precursors employed thiophenes as the donor units and benzothiazole as the acceptor unit. The conjugated chain length effects of the polymers’ electrochemical and electrochromic properties were carefully examined. As the conjugated chain length increases, both precursors exhibited reduced the HOMO-LUMO energy gap and red-shifted UV–Vis absorption and fluorescence spectra. Both polymers displayed n-doping and p-doping process with excellent redox stability, PBT-4T retained 94.17 % of its original electroactivity, which is higher than that of PBT-2T (92.86 %). Meanwhile, both polymers exhibited reversible changes in UV–Vis absorption spectra under voltage drive of 0 V–1.8 V, accompanied by color changes from light pink to black-gray (PBT-2T) and from purple to dark brown (PBT-4T). PBT-2T showed highest optical contrast of 41 % at 750 nm and fastest response time of 0.2 s for the oxidation process at 528 nm because of porous structure, which undoubtedly facilitates the ingress and egress of ions. The varying the π-conjugated chain length from bithiophene to quaterthiophene strategy may provide a new research idea to achieve high-performance electrochromic conjugated polymers.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"146 ","pages":"Article 107324"},"PeriodicalIF":2.6,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-11DOI: 10.1016/j.orgel.2025.107323
Ruixing Wanghe, Zeyu Jia, Guangyuan Wang
With the advancement of technology, an increasing number of high efficiency organic light-emitting diode (OLED) devices utilizing multi-reverse intersystem crossing (RISC) channels have been reported. The multi-RISC channel strategy has emerged as a highly feasible OLED design approach. However, the analysis of multi-RISC channel single-emissive-layer OLEDs still faces numerous challenges due to the presence of multiple different kinds of molecules in the EML. Herein, based on experiments, molecular dynamics (MD) simulations, and quantum chemical calculations, a systematic analysis has been conducted on the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs. It is believed that the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs is attributed to the charge carrier recombination order in the emitting layer, the fluctuation of the excited state energy level of exciplex caused by the change in molecular polarity surrounding the emissive exciplex, and the transition between different efficiency roll-off models. This work provides new pathways and analysis methods to enhancing the efficiency of multi-RISC channel single-emissive-layer OLEDs.
{"title":"The analysis of the electroluminescence performance of multi-RISC channel single-emissive-layer organic light-emitting diode","authors":"Ruixing Wanghe, Zeyu Jia, Guangyuan Wang","doi":"10.1016/j.orgel.2025.107323","DOIUrl":"10.1016/j.orgel.2025.107323","url":null,"abstract":"<div><div>With the advancement of technology, an increasing number of high efficiency organic light-emitting diode (OLED) devices utilizing multi-reverse intersystem crossing (RISC) channels have been reported. The multi-RISC channel strategy has emerged as a highly feasible OLED design approach. However, the analysis of multi-RISC channel single-emissive-layer OLEDs still faces numerous challenges due to the presence of multiple different kinds of molecules in the EML. Herein, based on experiments, molecular dynamics (MD) simulations, and quantum chemical calculations, a systematic analysis has been conducted on the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs. It is believed that the impact of doping concentration on the electroluminescence performance of multi-RISC channel single-emissive-layer OLEDs is attributed to the charge carrier recombination order in the emitting layer, the fluctuation of the excited state energy level of exciplex caused by the change in molecular polarity surrounding the emissive exciplex, and the transition between different efficiency roll-off models. This work provides new pathways and analysis methods to enhancing the efficiency of multi-RISC channel single-emissive-layer OLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"146 ","pages":"Article 107323"},"PeriodicalIF":2.6,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144828367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-30DOI: 10.1016/j.orgel.2025.107311
Jiangtong Zhao , Yiming Shao , Rui Sun , Weiwei Wu , Bo Xiao , Ji Wan , Youdi Zhang , Jie Min
The asymmetric molecular design strategy has been proven to be an effective method to improve the photovoltaic performance of organic solar cells. In this work, to extend the pool of asymmetric non-fullerene acceptors, we introduced rhodamine as a terminal group into Y-series small molecule acceptors (SMAs) and synthesized three asymmetric SMAs (BTP-Rh2F, BTP-Rh2Cl, and BTP-Rh2Br) with different halogen substitutions. As a result, shallow lowest unoccupied molecular orbital energy levels of these SMAs contribute to high open-circuit voltage (VOC) values exceeding 0.95 V in corresponding devices. However, insufficient exciton dissociation and inefficient charge carrier mobility limit the power conversion efficiencies (PCEs). Notably, the introduction of BTP-Rh2Cl as a third component into the PM6:BTP-eC9 binary host system effectively reduces non-radiative recombination, ultimately yielding an enhanced PCE of 18.03 % along with improved VOC of 0.863 V. This work highlights the potential of rhodamine-modified SMAs in enhanced VOC and high-efficiency ternary solar cells.
{"title":"Leveraging rhodamine-terminated small molecule acceptors for high open-circuit voltage and improved efficiency in organic solar cells","authors":"Jiangtong Zhao , Yiming Shao , Rui Sun , Weiwei Wu , Bo Xiao , Ji Wan , Youdi Zhang , Jie Min","doi":"10.1016/j.orgel.2025.107311","DOIUrl":"10.1016/j.orgel.2025.107311","url":null,"abstract":"<div><div>The asymmetric molecular design strategy has been proven to be an effective method to improve the photovoltaic performance of organic solar cells. In this work, to extend the pool of asymmetric non-fullerene acceptors, we introduced rhodamine as a terminal group into Y-series small molecule acceptors (SMAs) and synthesized three asymmetric SMAs (BTP-Rh2F, BTP-Rh2Cl, and BTP-Rh2Br) with different halogen substitutions. As a result, shallow lowest unoccupied molecular orbital energy levels of these SMAs contribute to high open-circuit voltage (<em>V</em><sub>OC</sub>) values exceeding 0.95 V in corresponding devices. However, insufficient exciton dissociation and inefficient charge carrier mobility limit the power conversion efficiencies (PCEs). Notably, the introduction of BTP-Rh2Cl as a third component into the PM6:BTP-eC9 binary host system effectively reduces non-radiative recombination, ultimately yielding an enhanced PCE of 18.03 % along with improved <em>V</em><sub>OC</sub> of 0.863 V. This work highlights the potential of rhodamine-modified SMAs in enhanced <em>V</em><sub>OC</sub> and high-efficiency ternary solar cells.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107311"},"PeriodicalIF":2.6,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-29DOI: 10.1016/j.orgel.2025.107310
Kui Li , Yue Liu , Hang Yang , Ya Yuan , Jun Feng , Jiahao Qian , Xuncheng Zhu , Yue Wu , Chaohua Cui , Yongfang Li
Alkylthio side-chain engineering plays an important role in constructing high-performance small-molecule acceptors (SMAs) for organic solar cells (OSCs). In this work, two ethylthio-substituted quinoxaline core-based SMAs (BQS-F and BQDS-F) are developed to elucidate the impact of alkylthio substituents on their physicochemical and photoelectric properties. Comparative analysis reveals that the dialkylthio-substituted BQDS-F exhibited a more planar molecular backbone, red-shifted absorption spectrum, upshifted molecular orbital energy levels, and enhanced crystallinity compared to the monoalkylthio-substituted BQS-F. However, the poor thermodynamic compatibility of BQDS-F with the polymer donor D18 leads to excessively phase-separated heterojunction textures. By contrast, more homogeneous and uniform phase separation is realized in D18:BQS-F blend film, resulting in enhanced exciton dissociation efficiency, improved charge carrier mobility, and suppressed charge recombination. As a result, the BQS-F-based device affords a much higher efficiency of 15.52 % compared to the BQDS-F-based device (12.21 %). The results clarify the effect of ethylthio substituents on quinoxaline core-based SMAs, which are instructive to further advance the development of organic photovoltaics.
{"title":"Alkylthio side-chain engineering on the quinoxaline-based electron acceptors for efficient organic solar cells","authors":"Kui Li , Yue Liu , Hang Yang , Ya Yuan , Jun Feng , Jiahao Qian , Xuncheng Zhu , Yue Wu , Chaohua Cui , Yongfang Li","doi":"10.1016/j.orgel.2025.107310","DOIUrl":"10.1016/j.orgel.2025.107310","url":null,"abstract":"<div><div>Alkylthio side-chain engineering plays an important role in constructing high-performance small-molecule acceptors (SMAs) for organic solar cells (OSCs). In this work, two ethylthio-substituted quinoxaline core-based SMAs (BQS-F and BQDS-F) are developed to elucidate the impact of alkylthio substituents on their physicochemical and photoelectric properties. Comparative analysis reveals that the dialkylthio-substituted BQDS-F exhibited a more planar molecular backbone, red-shifted absorption spectrum, upshifted molecular orbital energy levels, and enhanced crystallinity compared to the monoalkylthio-substituted BQS-F. However, the poor thermodynamic compatibility of BQDS-F with the polymer donor D18 leads to excessively phase-separated heterojunction textures. By contrast, more homogeneous and uniform phase separation is realized in D18:BQS-F blend film, resulting in enhanced exciton dissociation efficiency, improved charge carrier mobility, and suppressed charge recombination. As a result, the BQS-F-based device affords a much higher efficiency of 15.52 % compared to the BQDS-F-based device (12.21 %). The results clarify the effect of ethylthio substituents on quinoxaline core-based SMAs, which are instructive to further advance the development of organic photovoltaics.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107310"},"PeriodicalIF":2.6,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-29DOI: 10.1016/j.orgel.2025.107314
Hong Zhu , Wenkai Tan , Lijian Chen , Quanhua Chen , Guangan Yang , Li Zhu , Xiang Wan , Chee Leong Tan , Dongyoon Khim , Zhihao Yu , Yong Xu , Huabin Sun
Polymer field-effect transistors (PFETs) hold significant promise for flexible displays. However, their widespread application is hindered by performance non-uniformity arising from vatiations in chain alignment and domain structures. This paper optimizes the electrical uniformity by integrating the Langmuir-Blodgett (LB) technique with poly (methyl-methacrylate) (PMMA) blending in aligned copolymer DPPT-TT semiconductor layers. The LB process enhances molecular orientation, strengthening π-π intermolecular interactions. The on-current of parallel-channel devices reaches 27 μA, which is a 20 % increase compared to orthogonal-channel devices. Incorporating PMMA (DPPT-TT:PMMA = 1:0.4) optimize film morphology, exhibit a more uniform threshold voltage of 4.3 ± 2.1 V, compared to 5.5 ± 3.4 V for those without PMMA. Similarly, the sub-threshold swing is more consistent at 6.5 ± 0.9 V/dec with PMMA, versus 6.7 ± 1.1 V/dec without it. The trap density of devices with PMMA is 3.0 × 1012 eV−1cm−2, which is a 75 % reduction compared to devices without PMMA. These results demonstrate a scalable strategy for fabricating high-uniformity PFETs, advancing their applicability in flexible circuits.
{"title":"Achieving uniform electrical performance by regulating domain structure in aligned DPPT-TT: PMMA blended layers","authors":"Hong Zhu , Wenkai Tan , Lijian Chen , Quanhua Chen , Guangan Yang , Li Zhu , Xiang Wan , Chee Leong Tan , Dongyoon Khim , Zhihao Yu , Yong Xu , Huabin Sun","doi":"10.1016/j.orgel.2025.107314","DOIUrl":"10.1016/j.orgel.2025.107314","url":null,"abstract":"<div><div>Polymer field-effect transistors (PFETs) hold significant promise for flexible displays. However, their widespread application is hindered by performance non-uniformity arising from vatiations in chain alignment and domain structures. This paper optimizes the electrical uniformity by integrating the Langmuir-Blodgett (LB) technique with poly (methyl-methacrylate) (PMMA) blending in aligned copolymer DPPT-TT semiconductor layers. The LB process enhances molecular orientation, strengthening π-π intermolecular interactions. The on-current of parallel-channel devices reaches 27 μA, which is a 20 % increase compared to orthogonal-channel devices. Incorporating PMMA (DPPT-TT:PMMA = 1:0.4) optimize film morphology, exhibit a more uniform threshold voltage of 4.3 ± 2.1 V, compared to 5.5 ± 3.4 V for those without PMMA. Similarly, the sub-threshold swing is more consistent at 6.5 ± 0.9 V/dec with PMMA, versus 6.7 ± 1.1 V/dec without it. The trap density of devices with PMMA is 3.0 × 10<sup>12</sup> eV<sup>−1</sup>cm<sup>−2</sup>, which is a 75 % reduction compared to devices without PMMA. These results demonstrate a scalable strategy for fabricating high-uniformity PFETs, advancing their applicability in flexible circuits.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107314"},"PeriodicalIF":2.6,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boron-nitrogen multiresonant thermally activated delayed fluorescence (BN MR-TADF) emitters have attracted widespread attention for high performance organic light-emitting diodes (OLEDs) due to their narrowband emissions and high efficiencies. However, emitters incorporating electron-deficient N-heterocycles are rarely reported and remain largely unexplored because of synthetic challenges under harsh borylation conditions. We present a protection/deprotection strategy using benzyl groups to overcome this restriction to offer a modifiable core molecule HBN, enabling late-stage modular introduction of electron-deficient N-heterocycles to furnish a variety of novel N-heterocycle-winged BN emitters, the HetBN series. It should be noted that a unique sequential two-step debenzylation protocol is developed and must be applied to remove both benzyl groups. As exemplified herein, four emitters, oPyBN, mPyBN, PymBN, and PhTzBN, which are inaccessible via conventional methods, were successfully prepared. They emit deep-blue photoluminescence with fine-tuneable wavelengths below 454 nm, high PLQYs above 90 %, narrow FWHMs under 30 nm, and fast exciton dynamics, demonstrating the beneficial effect of N-heterocycles in fine-tuning the photophysical properties of BN MR-TADF emitters. A preliminary OLED device fabricated with PhTzBN exhibited deep-blue emission at 444 nm with a narrow FWHM of 31 nm (0.19 eV), the Commission Internationale de l’Éclairage (CIE) coordinates of (0.16, 0.08), and a maximum external quantum efficiency (EQE) of 5.2 %. This study paves the way to modular synthesis of innovative N-heterocycle-winged BN MR-TADF emitters.
{"title":"A modular access to N-heterocycle-winged boron-nitrogen multiresonant emitters with narrowband deep-blue emissions","authors":"Yuhang Fan, Songtao Li, Yuxuan He, Junjie Liu, Zhengyang Bin, Ge Gao","doi":"10.1016/j.orgel.2025.107312","DOIUrl":"10.1016/j.orgel.2025.107312","url":null,"abstract":"<div><div>Boron-nitrogen multiresonant thermally activated delayed fluorescence (BN MR-TADF) emitters have attracted widespread attention for high performance organic light-emitting diodes (OLEDs) due to their narrowband emissions and high efficiencies. However, emitters incorporating electron-deficient N-heterocycles are rarely reported and remain largely unexplored because of synthetic challenges under harsh borylation conditions. We present a protection/deprotection strategy using benzyl groups to overcome this restriction to offer a modifiable core molecule <strong>HBN</strong>, enabling late-stage modular introduction of electron-deficient N-heterocycles to furnish a variety of novel N-heterocycle-winged BN emitters, the <strong>HetBN</strong> series. It should be noted that a unique sequential two-step debenzylation protocol is developed and must be applied to remove both benzyl groups. As exemplified herein, four emitters, <strong><em>o</em>PyBN</strong>, <strong><em>m</em>PyBN</strong>, <strong>PymBN</strong>, and <strong>PhTzBN</strong>, which are inaccessible via conventional methods, were successfully prepared. They emit deep-blue photoluminescence with fine-tuneable wavelengths below 454 nm, high PLQYs above 90 %, narrow FWHMs under 30 nm, and fast exciton dynamics, demonstrating the beneficial effect of N-heterocycles in fine-tuning the photophysical properties of BN MR-TADF emitters. A preliminary OLED device fabricated with <strong>PhTzBN</strong> exhibited deep-blue emission at 444 nm with a narrow FWHM of 31 nm (0.19 eV), the Commission Internationale de l’Éclairage (CIE) coordinates of (0.16, 0.08), and a maximum external quantum efficiency (EQE) of 5.2 %. This study paves the way to modular synthesis of innovative N-heterocycle-winged BN MR-TADF emitters.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107312"},"PeriodicalIF":2.6,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-26DOI: 10.1016/j.orgel.2025.107309
Kaat Valkeneers , Laura Leten , Sam Gielen , Tom Cardeynaels , Sigurd Mertens , Jochen Vanderspikken , Ruth Theresia Arwani , Adam Marks , Alberto Salleo , Rachith Shanivarasanthe Nithyananda Kumar , Laurence Lutsen , Koen Vandewal , Wouter Maes
The unrivaled structural tunability of organic semiconductors allows to tailor their chemical and physical properties for distinct optoelectronic applications. This is particularly true for push-pull conjugated polymers, in which the (hetero)aromatic monomers, substituents, and side chains can be readily adapted. On the other hand, the impact of isomerization within the polymer backbone remains poorly explored. Here, a novel structural isomer of the state-of-the-art push-pull copolymer D18 is synthesized. This ‘isoD18’ regioisomer shows significantly different optical and electrochemical properties. Its deeper highest occupied molecular orbital energy level and reduced non-radiative voltage losses afford a higher open-circuit voltage (from 0.86 to 0.92 V) for the resulting polymer solar cells. Unfortunately, this is accompanied by a decrease in the short-circuit current density and fill factor, which can mainly be attributed to the one-order-lower hole mobility of isoD18, in line with its reduced thin-film organization. Although the performance of the devices based on the isomeric derivative turns out to be lower in this case, this study does enhance our insights into the effects of regioisomerism in polymer semiconductors on the resulting optoelectronic material and device features.
{"title":"Design, synthesis, and photovoltaic performance of regioisomeric D18 – Impact of cross-conjugation on electronic structure and solar cell efficiency","authors":"Kaat Valkeneers , Laura Leten , Sam Gielen , Tom Cardeynaels , Sigurd Mertens , Jochen Vanderspikken , Ruth Theresia Arwani , Adam Marks , Alberto Salleo , Rachith Shanivarasanthe Nithyananda Kumar , Laurence Lutsen , Koen Vandewal , Wouter Maes","doi":"10.1016/j.orgel.2025.107309","DOIUrl":"10.1016/j.orgel.2025.107309","url":null,"abstract":"<div><div>The unrivaled structural tunability of organic semiconductors allows to tailor their chemical and physical properties for distinct optoelectronic applications. This is particularly true for push-pull conjugated polymers, in which the (hetero)aromatic monomers, substituents, and side chains can be readily adapted. On the other hand, the impact of isomerization within the polymer backbone remains poorly explored. Here, a novel structural isomer of the state-of-the-art push-pull copolymer D18 is synthesized. This ‘isoD18’ regioisomer shows significantly different optical and electrochemical properties. Its deeper highest occupied molecular orbital energy level and reduced non-radiative voltage losses afford a higher open-circuit voltage (from 0.86 to 0.92 V) for the resulting polymer solar cells. Unfortunately, this is accompanied by a decrease in the short-circuit current density and fill factor, which can mainly be attributed to the one-order-lower hole mobility of isoD18, in line with its reduced thin-film organization. Although the performance of the devices based on the isomeric derivative turns out to be lower in this case, this study does enhance our insights into the effects of regioisomerism in polymer semiconductors on the resulting optoelectronic material and device features.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107309"},"PeriodicalIF":2.6,"publicationDate":"2025-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-23DOI: 10.1016/j.orgel.2025.107307
Yidong Zhao , Zihe Cao , Yi Yang , Xiaolu Chen , Anyu Jiang , Qiang Lu , Bing Zhang
The research aims to avoid the transformation of α-FAPbI3 with favorable photoelectric conversion performance into a non-perovskite δ-phase that completely loses photoactivity. To this end, it is necessary to understand its structural stability under different conditions and the mechanisms underpinning both the phase transformation and associated inhibition. Firstly, Ab Initio Molecular Dynamics (AIMD) is used to explore the evolution of the crystal structure of α-FAPbI3 across different temperature ranges and space limitations. Results show that space limitation exerts a better inhibitory effect on α-FAPbI3 phase transformation than increasing the temperature. Then, parameters, including the lattice parameters and unit cell angle, are used to analyze the mechanism underlying the difference in the phase transformation process under different conditions. Finally, it is revealed that space limitation can better maintain the presence of an α-FAPbI3 phase when compared with an increase in temperature, thus clarifying the reason for the inhibition of such a phase transformation.
本研究旨在避免具有良好光电转换性能的α-FAPbI3转变为完全失去光活性的非钙钛矿δ相。为此,有必要了解其在不同条件下的结构稳定性以及相变和相关抑制的机制。首先,利用从头计算分子动力学(Ab Initio Molecular Dynamics, AIMD)研究α-FAPbI3晶体结构在不同温度范围和空间限制下的演化。结果表明,空间限制比提高温度对α-FAPbI3相变的抑制效果更好。然后,利用晶格参数和单位胞角等参数分析了不同条件下相变过程差异的机理。最后揭示了空间限制比温度升高更能维持α-FAPbI3相的存在,从而阐明了抑制α-FAPbI3相变的原因。
{"title":"FAPbI3 phase transformation mechanism based on quantum dynamics","authors":"Yidong Zhao , Zihe Cao , Yi Yang , Xiaolu Chen , Anyu Jiang , Qiang Lu , Bing Zhang","doi":"10.1016/j.orgel.2025.107307","DOIUrl":"10.1016/j.orgel.2025.107307","url":null,"abstract":"<div><div>The research aims to avoid the transformation of α-FAPbI<sub>3</sub> with favorable photoelectric conversion performance into a non-perovskite δ-phase that completely loses photoactivity. To this end, it is necessary to understand its structural stability under different conditions and the mechanisms underpinning both the phase transformation and associated inhibition. Firstly, Ab Initio Molecular Dynamics (AIMD) is used to explore the evolution of the crystal structure of α-FAPbI<sub>3</sub> across different temperature ranges and space limitations. Results show that space limitation exerts a better inhibitory effect on α-FAPbI<sub>3</sub> phase transformation than increasing the temperature. Then, parameters, including the lattice parameters and unit cell angle, are used to analyze the mechanism underlying the difference in the phase transformation process under different conditions. Finally, it is revealed that space limitation can better maintain the presence of an α-FAPbI<sub>3</sub> phase when compared with an increase in temperature, thus clarifying the reason for the inhibition of such a phase transformation.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107307"},"PeriodicalIF":2.7,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144703521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-23DOI: 10.1016/j.orgel.2025.107294
Jing Yi , Ruiting Zhang , Yanfeng Dai , Dongge Ma
The effects of thin metal film gold or silver (Au and Ag) combined with transition metal oxides (TMOs) V2O5 and MoO3 used as composite modification layer on ITO anode in organic light-emitting diodes (OLEDs) were investigated and compared. It was found that incorporating the thin metal film (Au or Ag) with V2O5 (MoO3) modification layer facilitates to improve the hole injection into the hole transport layer (HTL), thereby enhancing the performance of OLEDs. The device with V2O5 -modified thin metal film on ITO exhibited higher electroluminescent (EL) efficiency compared to that with MoO3-modified thin metal film. Specifically, the device with the structure ITO/Au (0.5 nm)/V2O5 (1 nm) achieved a current efficiency of 96 cd/A. The ultraviolet photoelectron spectroscopy (UPS) investigation revealed that ITO/thin metal/V2O5 structure has a higher work function than ITO/thin metal/MoO3, which contributes to the improved hole injection.
{"title":"Effects of thin metal/metal oxide composite modification layer on ITO anode in organic light-emitting diodes","authors":"Jing Yi , Ruiting Zhang , Yanfeng Dai , Dongge Ma","doi":"10.1016/j.orgel.2025.107294","DOIUrl":"10.1016/j.orgel.2025.107294","url":null,"abstract":"<div><div>The effects of thin metal film gold or silver (Au and Ag) combined with transition metal oxides (TMOs) V<sub>2</sub>O<sub>5</sub> and MoO<sub>3</sub> used as composite modification layer on ITO anode in organic light-emitting diodes (OLEDs) were investigated and compared. It was found that incorporating the thin metal film (Au or Ag) with V<sub>2</sub>O<sub>5</sub> (MoO<sub>3</sub>) modification layer facilitates to improve the hole injection into the hole transport layer (HTL), thereby enhancing the performance of OLEDs. The device with V<sub>2</sub>O<sub>5</sub> -modified thin metal film on ITO exhibited higher electroluminescent (EL) efficiency compared to that with MoO<sub>3</sub>-modified thin metal film. Specifically, the device with the structure ITO/Au (0.5 nm)/V<sub>2</sub>O<sub>5</sub> (1 nm) achieved a current efficiency of 96 cd/A. The ultraviolet photoelectron spectroscopy (UPS) investigation revealed that ITO/thin metal/V<sub>2</sub>O<sub>5</sub> structure has a higher work function than ITO/thin metal/MoO<sub>3</sub>, which contributes to the improved hole injection.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107294"},"PeriodicalIF":2.7,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144696968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-19DOI: 10.1016/j.orgel.2025.107305
Swarali K. Joshi , Trishala Desai , Kasturi A. Rokade , Omkar Y. Pawar , Omkar A. Patil , Akash V. Fulari , Sunil S. Nirmale , Rajanish K. Kamat , Chitra Gurnani , Sooman Lim , Tukaram D. Dongale
The development of biocompatible, environmentally friendly, and low-cost functional switching materials for memory and synaptic learning devices has gained importance in recent years. Dopamine is a naturally occurring biomaterial that has been used in various fields. In the present study, dopamine@agarose was used as a switching layer, sandwiched between Ag top and FTO bottom electrodes to form the Ag/dopamine@agarose/FTO device. The agarose was utilized due to its natural polymeric properties and its functionality as a binder. The switching layer was characterized using UV–vis spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, and field emission scanning electron microscopy. The non-pinched hysteresis curve revealed the mem-capacitive behaviour of the device, which was corroborated using electrochemical and frequency-dependent capacitance-voltage studies. The charge-flux properties depicted the non-ideal memristor nature of the device. Furthermore, the cumulative probability and Weibull distribution were studied to understand the switching variability. The fabricated device demonstrates a stable multilevel volatile memory effect over 15000 cycles. The results assert that dopamine can be a potential candidate for developing sustainable volatile memory devices.
{"title":"Mem-capacitance enabled volatile switching in Dopamine@Agarose-based devices","authors":"Swarali K. Joshi , Trishala Desai , Kasturi A. Rokade , Omkar Y. Pawar , Omkar A. Patil , Akash V. Fulari , Sunil S. Nirmale , Rajanish K. Kamat , Chitra Gurnani , Sooman Lim , Tukaram D. Dongale","doi":"10.1016/j.orgel.2025.107305","DOIUrl":"10.1016/j.orgel.2025.107305","url":null,"abstract":"<div><div>The development of biocompatible, environmentally friendly, and low-cost functional switching materials for memory and synaptic learning devices has gained importance in recent years. Dopamine is a naturally occurring biomaterial that has been used in various fields. In the present study, dopamine@agarose was used as a switching layer, sandwiched between Ag top and FTO bottom electrodes to form the Ag/dopamine@agarose/FTO device. The agarose was utilized due to its natural polymeric properties and its functionality as a binder. The switching layer was characterized using UV–vis spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, and field emission scanning electron microscopy. The non-pinched hysteresis curve revealed the mem-capacitive behaviour of the device, which was corroborated using electrochemical and frequency-dependent capacitance-voltage studies. The charge-flux properties depicted the non-ideal memristor nature of the device. Furthermore, the cumulative probability and Weibull distribution were studied to understand the switching variability. The fabricated device demonstrates a stable multilevel volatile memory effect over 15000 cycles. The results assert that dopamine can be a potential candidate for developing sustainable volatile memory devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107305"},"PeriodicalIF":2.7,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144687137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}