Organic Electronics最新文献

英文中文

Ultra-high-efficiency white organic light-emitting diodes based on TADF material incorporated efficient exciplex hosts

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-01-13 DOI: 10.1016/j.orgel.2025.107196

Zi-Qi Chen , Han Liu , Xiao-Jing Wang , Jian Fan , Yue-Min Xie , Man-Keung Fung

White organic light-emitting diode (WOLED) has been recognized as a healthy light source. However, the device performance is still limited by the hosts or emitters. Herein, multiple-exciplex hosts are developed for WOLEDs, in which a novel exciplex host consisting of a thermally activated delayed fluorescent material, triazine–carbazole (Trz-PhCz), and an electron-transport material, 4,6-bis[3,5-(dipyrid-4-yl)phenyl]-2-methylpyrimidine (B4PyMPM), is adopted for green, yellow, orange and red phosphorescent dopants, of which high external quantum efficiencies (EQEs) of 25.0 %, 30.7 %, 32.5 % and 26.2 %, respectively, are achieved. On the other hand, a high-energy exciplex host consisting of 9,9′-biphenyl-3,3′-diylbis-9H-carbazole (mCBP) and B4PyMPM is designed for the blue emitter, iridium(III)bis(4,6-(difluorophenyl)-pyridinato-N,C2’) picolinate (FIrpic), which guarantees a maximum EQE of 26.3 %. The small exciton energy difference between the mCBP:B4PyMPM and Trz-PhCz:B4PyMPM hosts can facilitate efficient energy transfer between the hosts. As a result, these exciplex hosts facilitate energy-efficient WOLEDs with a maximum EQE, power efficiency and current efficiency of 36.9 %, 137.4 lm W⁻¹ and 106.7 cd A⁻¹, respectively, without using any optical out-coupling techniques, which provides inspiration for the future design of efficient OLEDs.

{"title":"Ultra-high-efficiency white organic light-emitting diodes based on TADF material incorporated efficient exciplex hosts","authors":"Zi-Qi Chen , Han Liu , Xiao-Jing Wang , Jian Fan , Yue-Min Xie , Man-Keung Fung","doi":"10.1016/j.orgel.2025.107196","DOIUrl":"10.1016/j.orgel.2025.107196","url":null,"abstract":"<div><div>White organic light-emitting diode (WOLED) has been recognized as a healthy light source. However, the device performance is still limited by the hosts or emitters. Herein, multiple-exciplex hosts are developed for WOLEDs, in which a novel exciplex host consisting of a thermally activated delayed fluorescent material, triazine–carbazole (Trz-PhCz), and an electron-transport material, 4,6-bis[3,5-(dipyrid-4-yl)phenyl]-2-methylpyrimidine (B4PyMPM), is adopted for green, yellow, orange and red phosphorescent dopants, of which high external quantum efficiencies (EQEs) of 25.0 %, 30.7 %, 32.5 % and 26.2 %, respectively, are achieved. On the other hand, a high-energy exciplex host consisting of 9,9′-biphenyl-3,3′-diylbis-9H-carbazole (mCBP) and B4PyMPM is designed for the blue emitter, iridium(III)bis(4,6-(difluorophenyl)-pyridinato-N,C2’) picolinate (FIrpic), which guarantees a maximum EQE of 26.3 %. The small exciton energy difference between the mCBP:B4PyMPM and Trz-PhCz:B4PyMPM hosts can facilitate efficient energy transfer between the hosts. As a result, these exciplex hosts facilitate energy-efficient WOLEDs with a maximum EQE, power efficiency and current efficiency of 36.9 %, 137.4 lm W<sup>−1</sup> and 106.7 cd A<sup>−1</sup>, respectively, without using any optical out-coupling techniques, which provides inspiration for the future design of efficient OLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"139 ","pages":"Article 107196"},"PeriodicalIF":2.7,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143140500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy gap and orbital mixing in DNTT/PTCDI-C8 heterostructure

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-01-07 DOI: 10.1016/j.orgel.2025.107195

Yeo Eun Kim , Haeji Jung , Joon Hyung Park , Hocheon Yoo , Chang-Hyun Kim

Organic pn heterostructures are widely employed in emerging devices. However, charge carrier behavior in these structures is not well understood, posing a difficulty in designing and optimizing devices in a systematic manner. In this article, finite-element simulation is used to reproduce and rationalize transfer characteristics of a thin-film transistor fabricated with DNTT/PTCDI-C8 heterostructure. Introducing the concept of orbital mixing enables a fit to the experimental data, providing insights into the role of energetic, transport, and interface parameters. Spatial distribution of charge carriers and electric potential inside the semiconductor channel suggests that the device performance is strongly affected by energetic barriers formed at metal/organic and organic/organic interfaces. Finally, the importance of discretization is illustrated by creating different meshes and analyzing their impact on simulated transfer characteristics.

引用次数: 0

Influence of surface groups on SnO2 nanoparticles in enhancing perovskite photodetector performance

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-30 DOI: 10.1016/j.orgel.2024.107194

Chao Yan , Pengtian Liu , Guozhen Bai, Zilong Wang, Zhidong Lou, Yanbing Hou, Feng Teng, Yufeng Hu

Tin oxide (SnO₂) has been extensively investigated as an electron-conductive material in perovskite solar cells. Over several years, various research efforts have reported different synthesis methods and modification strategies to improve power conversion efficiency (PCE). The PCE of 25.5% has been achieved by coupling Cl-bonded SnO₂ with a Cl-containing perovskite precursor. Despite numerous studies on the influence of surface groups on SnO₂, few have focused on their role in perovskite photodetectors (PPDs). In this study, we used the SnO₂ nanoparticle layer as a modification layer for indium tin oxide (ITO), achieving PPDs with low dark current and high detectivity (up to 10¹³ Jones). The devices with the SnO₂ layer annealed at different temperatures were fabricated for comparison. Characterizations such as scanning electron microscope (SEM), ultraviolet photoelectron spectroscopy (UPS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) were performed to elucidate the role of surface groups in modifying the work function and inhibiting of leakage current. The results suggest that chemically absorbed H₂O or OH groups on the SnO₂ surface play a crucial role in reducing the dark current and affecting perovskite crystallization. Additionally, Sn⁴⁺ coupling with OH- or H₂O may influence the Fermi level of modified ITO.

{"title":"Influence of surface groups on SnO2 nanoparticles in enhancing perovskite photodetector performance","authors":"Chao Yan , Pengtian Liu , Guozhen Bai, Zilong Wang, Zhidong Lou, Yanbing Hou, Feng Teng, Yufeng Hu","doi":"10.1016/j.orgel.2024.107194","DOIUrl":"10.1016/j.orgel.2024.107194","url":null,"abstract":"<div><div>Tin oxide (SnO<sub>2</sub>) has been extensively investigated as an electron-conductive material in perovskite solar cells. Over several years, various research efforts have reported different synthesis methods and modification strategies to improve power conversion efficiency (PCE). The PCE of 25.5% has been achieved by coupling Cl-bonded SnO<sub>2</sub> with a Cl-containing perovskite precursor. Despite numerous studies on the influence of surface groups on SnO<sub>2</sub>, few have focused on their role in perovskite photodetectors (PPDs). In this study, we used the SnO<sub>2</sub> nanoparticle layer as a modification layer for indium tin oxide (ITO), achieving PPDs with low dark current and high detectivity (up to 10<sup>13</sup> Jones). The devices with the SnO<sub>2</sub> layer annealed at different temperatures were fabricated for comparison. Characterizations such as scanning electron microscope (SEM), ultraviolet photoelectron spectroscopy (UPS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) were performed to elucidate the role of surface groups in modifying the work function and inhibiting of leakage current. The results suggest that chemically absorbed H<sub>2</sub>O or OH groups on the SnO<sub>2</sub> surface play a crucial role in reducing the dark current and affecting perovskite crystallization. Additionally, Sn<sup>4+</sup> coupling with OH- or H<sub>2</sub>O may influence the Fermi level of modified ITO.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107194"},"PeriodicalIF":2.7,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ternary solvent engineering incorporating hydrogen bonding for FAPbI3 perovskite solar cells

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-30 DOI: 10.1016/j.orgel.2024.107193

Junyeong Lee , Akshaiya Padmalatha Muthukrishnan , Rukesh Kumar Selvaprakash , Jongbok Kim , Sungjin Jo

This study explores crystallization rate control to improve grain size and surface roughness. Traditional binary solvent engineering has limitations for FAPbI₃ films because of rapid solvent evaporation at high annealing temperatures. Accordingly, this research proposes ternary solvent engineering (TSE) using dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and anisole (AN), which delays crystallization by forming hydrogen bonding. This finding demonstrates that AN, which is typically used as an antisolvent, can be effectively utilized as a PbI₂ precursor solvent. This approach affords larger grain sizes, reduces surface roughness, and improves charge transport, leading to an improvement in PCE from 12.23 % to 13.85 % by enhancing the fill factor. The results of this study suggest that TSE with AN can significantly enhance the performance of PSCs, providing a new pathway for efficient perovskite film fabrication.

引用次数: 0

Effect of emissive ligand number on the optoelectronic properties of dendronised heteroleptic green emitting iridium(III) complexes

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-21 DOI: 10.1016/j.orgel.2024.107192

Manikandan Koodalingam, Mile Gao, Junhyuk Jang, Paul L. Burn, Jos C.M. Kistemaker, Emma V. Puttock, Paul E. Shaw

We compare first- and second-generation dendrimers with biphenyl-based dendrons and green emissive homoleptic or heteroleptic fac-iridium(III) complex cores. The core complexes had one, two or three 2-phenylpyridyl ligands, which were responsible for the emission of light. The dendronised co-ligand, 5-phenyl-1-methyl-3-n-propyl-1H-1,2,4-triazole, was found not to contribute to the colour of the emission. The first- and second-generation dendrimers that had two emissive 2-phenylpyridyl ligands were found to have high solution photoluminescence quantum yields (PLQYs) of nearly 90 % whereas the homoleptic dendrimers and the one with a single emissive ligand had PLQYs of around 70 %. The PLQY values decreased in the solid-state, with the second-generation dendrimer with a single emissive ligand found to have the highest neat film PLQY of 55 %. This was attributed to the dendronised co-ligand acting as a self-host to reduce the intermolecular interactions that lead to the quenching of the luminescence. Organic light-emitting diodes (OLEDs) composed of neat films of the dendrimers had relatively poor performance, with unbalanced charge transport and a maximum external quantum efficiency (EQE) of 6.5 % for the second-generation dendrimer with a single emissive ligand. OLEDs with an emissive layer composed of a blend of the dendrimers in tris(4-carbazoyl-9-ylphenyl)amine all had similar current density-voltage characteristics, with the EQEs following the observed trend in the solution PLQY values. The OLED with the blend emissive layer containing the first-generation dendrimer with two emissive ligands was found to have an EQE of up to 14.1 %. Thus, both dendrimer generation and the number of emissive ligands can be used to control OLED performance.

{"title":"Effect of emissive ligand number on the optoelectronic properties of dendronised heteroleptic green emitting iridium(III) complexes","authors":"Manikandan Koodalingam, Mile Gao, Junhyuk Jang, Paul L. Burn, Jos C.M. Kistemaker, Emma V. Puttock, Paul E. Shaw","doi":"10.1016/j.orgel.2024.107192","DOIUrl":"10.1016/j.orgel.2024.107192","url":null,"abstract":"<div><div>We compare first- and second-generation dendrimers with biphenyl-based dendrons and green emissive homoleptic or heteroleptic <em>fac</em>-iridium(III) complex cores. The core complexes had one, two or three 2-phenylpyridyl ligands, which were responsible for the emission of light. The dendronised co-ligand, 5-phenyl-1-methyl-3-<em>n</em>-propyl-1<em>H</em>-1,2,4-triazole, was found not to contribute to the colour of the emission. The first- and second-generation dendrimers that had two emissive 2-phenylpyridyl ligands were found to have high solution photoluminescence quantum yields (PLQYs) of nearly 90 % whereas the homoleptic dendrimers and the one with a single emissive ligand had PLQYs of around 70 %. The PLQY values decreased in the solid-state, with the second-generation dendrimer with a single emissive ligand found to have the highest neat film PLQY of 55 %. This was attributed to the dendronised co-ligand acting as a self-host to reduce the intermolecular interactions that lead to the quenching of the luminescence. Organic light-emitting diodes (OLEDs) composed of neat films of the dendrimers had relatively poor performance, with unbalanced charge transport and a maximum external quantum efficiency (EQE) of 6.5 % for the second-generation dendrimer with a single emissive ligand. OLEDs with an emissive layer composed of a blend of the dendrimers in tris(4-carbazoyl-9-ylphenyl)amine all had similar current density-voltage characteristics, with the EQEs following the observed trend in the solution PLQY values. The OLED with the blend emissive layer containing the first-generation dendrimer with two emissive ligands was found to have an EQE of up to 14.1 %. Thus, both dendrimer generation and the number of emissive ligands can be used to control OLED performance.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107192"},"PeriodicalIF":2.7,"publicationDate":"2024-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of high capacitance of solution-processed polymer heterojunction gate dielectrics on the contact resistance of low-voltage n-channel organic transistors

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-20 DOI: 10.1016/j.orgel.2024.107191

Walid Boukhili , Swelm Wageh , Xiang Wan , Zhihao Yu , Chee Leong Tan , Huabin Sun , Yong-Young Noh , Kang-Jun Baeg , Yong Xu , Dongyoon Khim

Transistors should operate at lower voltages due to heat dissipation, reliability, technology scaling, compatibility, and signal issues. The importance of dielectric materials in low-voltage applications is significant, although, in organic transistors, experimental findings frequently do not correspond with existing theoretical frameworks. There is a lack of research, particularly in the field of n-type organic transistors. Here, the influences of high dielectric capacitance on the performance of low voltage n-channel organic field-effect transistors based on poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)) (P(NDI2OD-T2) OFETs) were examined. Utilizing a low-k dielectric as the initial layer enhances the semiconductor interface for n-channel transport while varying the thickness of a high-k dielectric as the subsequent layer alters the total capacitance (ranging from 13.7 to 29.7 nFcm⁻²). The performance of low-voltage P(NDI2OD-T2) OFETs has been improved in multiple electrical parameters through the utilization of a high dielectric capacitance with a well-optimized interface. The increased capacitance of P(NDI2OD-T2) OFETs resulted in reduced trap density and contact resistance, leading to a transition from contact-dominated to channel-dominated transport behavior, where a boundary of capacitance around 20 nFcm⁻² is recognized in this study. Our research provides an understanding of the operational mechanisms of n-channel OFETs and important information for enhancing low-voltage devices.

{"title":"Effects of high capacitance of solution-processed polymer heterojunction gate dielectrics on the contact resistance of low-voltage n-channel organic transistors","authors":"Walid Boukhili , Swelm Wageh , Xiang Wan , Zhihao Yu , Chee Leong Tan , Huabin Sun , Yong-Young Noh , Kang-Jun Baeg , Yong Xu , Dongyoon Khim","doi":"10.1016/j.orgel.2024.107191","DOIUrl":"10.1016/j.orgel.2024.107191","url":null,"abstract":"<div><div>Transistors should operate at lower voltages due to heat dissipation, reliability, technology scaling, compatibility, and signal issues. The importance of dielectric materials in low-voltage applications is significant, although, in organic transistors, experimental findings frequently do not correspond with existing theoretical frameworks. There is a lack of research, particularly in the field of n-type organic transistors. Here, the influences of high dielectric capacitance on the performance of low voltage n-channel organic field-effect transistors based on poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)) (P(NDI2OD-T2) OFETs) were examined. Utilizing a low-<em>k</em> dielectric as the initial layer enhances the semiconductor interface for n-channel transport while varying the thickness of a high-<em>k</em> dielectric as the subsequent layer alters the total capacitance (ranging from 13.7 to 29.7 nFcm<sup>−2</sup>). The performance of low-voltage P(NDI2OD-T2) OFETs has been improved in multiple electrical parameters through the utilization of a high dielectric capacitance with a well-optimized interface. The increased capacitance of P(NDI2OD-T2) OFETs resulted in reduced trap density and contact resistance, leading to a transition from contact-dominated to channel-dominated transport behavior, where a boundary of capacitance around 20 nFcm<sup>−2</sup> is recognized in this study. Our research provides an understanding of the operational mechanisms of n-channel OFETs and important information for enhancing low-voltage devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107191"},"PeriodicalIF":2.7,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of excess charge carriers and optimization of InP quantum-dot light-emitting diodes using self-assembled monolayers

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-19 DOI: 10.1016/j.orgel.2024.107190

Taewoong Yoo , Beomsoo Chun , Donghyo Hahm , Wan Ki Bae , Taesoo Lee , Jeonghun Kwak

InP-based quantum dot (QD) light-emitting diodes (QLEDs) have emerged as promising candidates for next-generation displays, yet their development remains challenging due to charge imbalances caused by the difference in electron and hole injection. Moreover, it is still debated whether the excess carriers are electrons or holes. In this study, we address this challenge by introducing self-assembled monolayers (SAMs) between the electron transport layer (ETL) and QDs. By employing two distinct SAMs with opposite dipole moments—4-methoxybenzoic acid (MBA) and 4-cyanobenzoic acid (CBA)—we provide direct evidence that electrons are in excess in InP QLEDs. The contrasting charge injection modulation effects of these SAMs enabled this clear identification of the excess carriers. Additionally, the SAMs improved surface morphologies and effectively passivated surface defects on the ZnO ETL, mitigating exciton quenching. As a result, MBA-treated QLEDs demonstrated superior device efficiencies compared to pristine or CBA-treated devices, attributed to the suppression of electron injection from the ETL to the QDs. We believe this study offers valuable insights for optimizing QLED performance through precise charge carrier modulation.

{"title":"Investigation of excess charge carriers and optimization of InP quantum-dot light-emitting diodes using self-assembled monolayers","authors":"Taewoong Yoo , Beomsoo Chun , Donghyo Hahm , Wan Ki Bae , Taesoo Lee , Jeonghun Kwak","doi":"10.1016/j.orgel.2024.107190","DOIUrl":"10.1016/j.orgel.2024.107190","url":null,"abstract":"<div><div>InP-based quantum dot (QD) light-emitting diodes (QLEDs) have emerged as promising candidates for next-generation displays, yet their development remains challenging due to charge imbalances caused by the difference in electron and hole injection. Moreover, it is still debated whether the excess carriers are electrons or holes. In this study, we address this challenge by introducing self-assembled monolayers (SAMs) between the electron transport layer (ETL) and QDs. By employing two distinct SAMs with opposite dipole moments—4-methoxybenzoic acid (MBA) and 4-cyanobenzoic acid (CBA)—we provide direct evidence that electrons are in excess in InP QLEDs. The contrasting charge injection modulation effects of these SAMs enabled this clear identification of the excess carriers. Additionally, the SAMs improved surface morphologies and effectively passivated surface defects on the ZnO ETL, mitigating exciton quenching. As a result, MBA-treated QLEDs demonstrated superior device efficiencies compared to pristine or CBA-treated devices, attributed to the suppression of electron injection from the ETL to the QDs. We believe this study offers valuable insights for optimizing QLED performance through precise charge carrier modulation.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107190"},"PeriodicalIF":2.7,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing performance of a photomultiplication-based broadband photodetector with porphyrin MOF-ZnO nanocomposite

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-18 DOI: 10.1016/j.orgel.2024.107184

Medha Joshi , Sampati Rao Sridhar , Upendra Kumar Verma , Varun Kumar Singhal , Brijesh Kumar

In this work, a nanocomposite using ZnTCPP MOF and ZnO nanoparticles is synthesized. A broadband photodetector is optimized using this nanocomposite to enhance the performance of a photomultiplication-based organic photodetector. Various weight percentages (w/w%) of ZnO were incorporated in the ZnTCPP metal-organic framework precursor during synthesis, and material parameters were analyzed via structural and chemical analysis methods. These nanocomposites were incorporated in the P3HT:PCBM matrix in a 1:1:0.5 wt ratio, and photodetectors were fabricated with an inverted structure (ITO/TiO₂/Active Layer/Al). A reference device with P3HT:PCBM and ZnO nanoparticles is fabricated and compared. Photomultiplication is observed in all the devices, with the devices with nanocomposite showing enhanced quantum efficiency and responsivity. The best-performing ZnTCPP@ZnO-based device reported the highest EQE of 10827 % at 510 nm for a given bias of −5 V. Photomultiplication is attributed to the trap states created due to the TiO₂/active layer interface and the presence of ZnO in the active material. ZnO acts as a hole-blocking component, giving rise to charge accumulation and, subsequently, tunneling electrons. These devices have shown high responsivity (44.53 A/W), small rise time/fall time (61.7 ms/107.6 ms), and high detectivity (7.2 × 10¹¹ Jones) at a given bias voltage of −5 V.

{"title":"Enhancing performance of a photomultiplication-based broadband photodetector with porphyrin MOF-ZnO nanocomposite","authors":"Medha Joshi , Sampati Rao Sridhar , Upendra Kumar Verma , Varun Kumar Singhal , Brijesh Kumar","doi":"10.1016/j.orgel.2024.107184","DOIUrl":"10.1016/j.orgel.2024.107184","url":null,"abstract":"<div><div>In this work, a nanocomposite using ZnTCPP MOF and ZnO nanoparticles is synthesized. A broadband photodetector is optimized using this nanocomposite to enhance the performance of a photomultiplication-based organic photodetector. Various weight percentages (w/w%) of ZnO were incorporated in the ZnTCPP metal-organic framework precursor during synthesis, and material parameters were analyzed via structural and chemical analysis methods. These nanocomposites were incorporated in the P3HT:PCBM matrix in a 1:1:0.5 wt ratio, and photodetectors were fabricated with an inverted structure (ITO/TiO<sub>2</sub>/Active Layer/Al). A reference device with P3HT:PCBM and ZnO nanoparticles is fabricated and compared. Photomultiplication is observed in all the devices, with the devices with nanocomposite showing enhanced quantum efficiency and responsivity. The best-performing ZnTCPP@ZnO-based device reported the highest EQE of 10827 % at 510 nm for a given bias of −5 V. Photomultiplication is attributed to the trap states created due to the TiO<sub>2</sub>/active layer interface and the presence of ZnO in the active material. ZnO acts as a hole-blocking component, giving rise to charge accumulation and, subsequently, tunneling electrons. These devices have shown high responsivity (44.53 A/W), small rise time/fall time (61.7 ms/107.6 ms), and high detectivity (7.2 × 10<sup>11</sup> Jones) at a given bias voltage of −5 V.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107184"},"PeriodicalIF":2.7,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Molecularly imprinted (3, 4-ethylenedioxythiophene) polymer based electrochemical non-enzymatic glucose sensor

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-12 DOI: 10.1016/j.orgel.2024.107181

Ganesan Kaniraja , Murugesan Karthikeyan , Marimuthu Dhinesh Kumar , Periyasamy Ananthappan , Anaswara Anil , Vairathevar Sivasamy Vasantha , Karuppiah Arunsunai Kumar , Chandran Karunakaran

Glucose plays a pivotal role as a vital biological marker in the diagnosis of diabetes, showcasing its potential utility for the early detection of diabetes mellitus (DM) in this study. Hence, a glucose sensor was developed for the non-enzymatic measurement of glucose. This sensor utilizes a molecularly imprinted polymer (MIP) attached to a conducting poly(3, 4-ethylenedioxythiophene) (PEDOT) layer. Here, the monomer EDOT was electropolymerized on a screen-printed carbon electrode (SPCE) with template glucose present to create the sensitive layer. Furthermore, electrochemical characterizations were performed using cyclic voltammetry (CV), differential pulse voltammetry (DPV), and electrochemical impedance spectroscopy (EIS) on a PBS solution containing 5 mM K₄[Fe(CN)₆]/K₃[Fe(CN)₆] as a redox probe. Using scanning electron microscopy (SEM), the generated sensors were morphologically described. Specifically, this glucose sensors linear response was within the range of 0.5 mM–6.5 mM, and its low detection limit was 0.025 mM (sensitivity: 0.036 mM μA⁻¹). Moreover, the applicability of the technique was successfully confirmed with the detection of glucose in biological (human plasma) samples. Our study demonstrated a low-cost, simple, and effective sensing platform for non-enzymatic glucose detection, making it a feasible tool for the future progress of accurate and reliable non-invasive diabetes mellitus diagnosis.

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引用次数: 0

Efficient greenish-blue thermally activated delayed fluorescence Zn complex for organic light emitting devices

IF 2.7 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2024-12-04 DOI: 10.1016/j.orgel.2024.107178

Chih-Pin Han , Chao-Hsien Hsu , Ching-Yuan Chu , Tzu-Hao Huang , Chih-Lun Yi , Ken-Tsung Wong , Jake A. Tan , Wen-Yi Hung , Man-kit Leung , Pi-Tai Chou

A greenish-blue zinc complex Zn(PhOBz)-PXZ with enhanced thermally activated delayed fluorescence (TADF) properties has been prepared from Zn(OAc)₂ and 4PXZ2OHBz, a 2-(1H-benzimidazol-2-yl)phenol-based TADF ligand. The TADF phenomenon has been confirmed by time-resolved photoluminescence (TrPL) studies. The DFT calculations show spatially well-separated HOMO and LUMO in their ground states, along with a small energy splitting between the excited singlet (S₁) and triplet (T₁) states, in a good agreement with the TADF mechanism. Due to the high thermal stability of Zn(PhOBz)-PXZ, OLED devices can be fabricated by vacuum vapor deposition, and greenish-blue OLEDs with the maximum emission at 521 nm were successfully demonstrated. The maximum external quantum efficiency (EQE_max) of 10.6 %, with Commission Internationale de l’Eclairage (CIE) coordinates of (0.28, 0.47) were recorded. Zinc TADF complexes have the advantages of cost-effectiveness, greater abundance of natural resources, environmentally friendly metals, making them potential replacements for future precious metal emitters.

{"title":"Efficient greenish-blue thermally activated delayed fluorescence Zn complex for organic light emitting devices","authors":"Chih-Pin Han , Chao-Hsien Hsu , Ching-Yuan Chu , Tzu-Hao Huang , Chih-Lun Yi , Ken-Tsung Wong , Jake A. Tan , Wen-Yi Hung , Man-kit Leung , Pi-Tai Chou","doi":"10.1016/j.orgel.2024.107178","DOIUrl":"10.1016/j.orgel.2024.107178","url":null,"abstract":"<div><div>A greenish-blue zinc complex <strong>Zn(PhOBz)-PXZ</strong> with enhanced thermally activated delayed fluorescence (TADF) properties has been prepared from Zn(OAc)<sub>2</sub> and <strong>4PXZ2OHBz</strong>, a 2-(1<em>H</em>-benzimidazol-2-yl)phenol-based TADF ligand. The TADF phenomenon has been confirmed by time-resolved photoluminescence (TrPL) studies. The DFT calculations show spatially well-separated HOMO and LUMO in their ground states, along with a small energy splitting between the excited singlet (S<sub>1</sub>) and triplet (T<sub>1</sub>) states, in a good agreement with the TADF mechanism. Due to the high thermal stability of <strong>Zn(PhOBz)-PXZ</strong>, OLED devices can be fabricated by vacuum vapor deposition, and greenish-blue OLEDs with the maximum emission at 521 nm were successfully demonstrated. The maximum external quantum efficiency (EQE<sub>max</sub>) of 10.6 %, with Commission Internationale de l’Eclairage (CIE) coordinates of (0.28, 0.47) were recorded. Zinc TADF complexes have the advantages of cost-effectiveness, greater abundance of natural resources, environmentally friendly metals, making them potential replacements for future precious metal emitters.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"138 ","pages":"Article 107178"},"PeriodicalIF":2.7,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143156575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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