Pub Date : 2024-03-24DOI: 10.1016/j.orgel.2024.107038
Dong Li, Xinyu Wang, Wuxun Chen, Yuan Zou, Jun Wang
Organic thin-film transistor (OTFT) has been adopted as a promising sensing platform to detect DNA target molecules by analyzing their electrical parameters. The source/drain current ratio of OTFT (with and without DNA molecules) as the sensor sensitivity have been widely utilized to detect and identify DNA molecules. In this paper, pentacene as a typical organic semiconductor with various thin-film thicknesses have been adopted as the active layer of OTFT that induce to the changeable sensor sensitivity for the DNA molecules. Importantly, the sensitivity of the device shows the remarkable dependence in the applied gate voltages (VG) and an improved trend is observed with the lowering of VG. Importantly, a ten-fold improvement in the sensor sensitivity is achieved by the optimization of channel thicknesses at the low VG condition. Furthermore, the variable-temperature measurements are carried out to explore the charge mechanism of OTFT induced by the DNA molecules. Our studies indicate the sensor sensitivity is mainly determined by the charge-injection process of OTFT arisen in the linear region. Current work will be helpful for deeply understanding the operating mechanism of OTFT-based biosensors.
有机薄膜晶体管(OTFT)已被作为一种有前途的传感平台,通过分析其电学参数来检测 DNA 目标分子。OTFT 的源电流/漏电流比(含 DNA 分子和不含 DNA 分子)作为传感器灵敏度已被广泛用于检测和识别 DNA 分子。本文采用不同薄膜厚度的典型有机半导体五碳烯作为 OTFT 的有源层,从而改变了对 DNA 分子的传感器灵敏度。重要的是,该器件的灵敏度与所施加的栅极电压(VG)有显著的相关性,而且随着 VG 的降低,灵敏度有提高的趋势。重要的是,在低 VG 条件下,通过优化沟道厚度,传感器的灵敏度提高了十倍。此外,我们还进行了变温测量,以探索 DNA 分子诱导 OTFT 的电荷机制。我们的研究表明,传感器的灵敏度主要由 OTFT 在线性区域产生的电荷注入过程决定。目前的工作将有助于深入理解基于 OTFT 的生物传感器的工作机制。
{"title":"Improving the detecting sensitivity of transistor-based DNA sensor by the optimization of channel thicknesses","authors":"Dong Li, Xinyu Wang, Wuxun Chen, Yuan Zou, Jun Wang","doi":"10.1016/j.orgel.2024.107038","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107038","url":null,"abstract":"<div><p>Organic thin-film transistor (OTFT) has been adopted as a promising sensing platform to detect DNA target molecules by analyzing their electrical parameters. The source/drain current ratio of OTFT (with and without DNA molecules) as the sensor sensitivity have been widely utilized to detect and identify DNA molecules. In this paper, pentacene as a typical organic semiconductor with various thin-film thicknesses have been adopted as the active layer of OTFT that induce to the changeable sensor sensitivity for the DNA molecules. Importantly, the sensitivity of the device shows the remarkable dependence in the applied gate voltages (V<sub>G</sub>) and an improved trend is observed with the lowering of V<sub>G</sub>. Importantly, a ten-fold improvement in the sensor sensitivity is achieved by the optimization of channel thicknesses at the low V<sub>G</sub> condition. Furthermore, the variable-temperature measurements are carried out to explore the charge mechanism of OTFT induced by the DNA molecules. Our studies indicate the sensor sensitivity is mainly determined by the charge-injection process of OTFT arisen in the linear region. Current work will be helpful for deeply understanding the operating mechanism of OTFT-based biosensors.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140208959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Robust encapsulation is indispensable for flexible organic solar cells (OSCs) moving into practical applications because the materials and interfaces of the cells are susceptible to water vapor and oxygen under illumination. Fleixble barrier films are one of the key parts of the encapsulation. In this work, we report the fabrication of flexible barrier films comprising of alternating parylene C and alumina dyads, and the application of these barrier films to encapsulate flexible OSCs. Parylene C layers are deposited by chemical vapor deposition (CVD) and dense alumina layers are grown by atomic layer deposition (ALD). The fabricated film comprising of three dyads of parylene C and alumina shows a low water vapor transmission rate (WVTR) of 8.7 × 10−4 g m−2 day−1 (25 °C, 100% RH) devrived by calcium conductance test. Encapsulated OSCs could retain 80% of their initial efficiency after immersed into water for 624 h, and could retain 81% of their initial efficiency under continuous illumination for 1156 h in ambient atmosphere.
由于柔性有机太阳能电池(OSC)的材料和界面在光照下很容易受到水蒸气和氧气的影响,因此要想将其投入实际应用,强大的封装技术是必不可少的。可挠性阻挡膜是封装的关键部分之一。在这项工作中,我们报告了由交替的对二甲苯 C 和氧化铝组成的柔性阻挡层薄膜的制作过程,以及应用这些阻挡层薄膜封装柔性 OSC 的情况。对二甲苯 C 层通过化学气相沉积(CVD)沉积,致密的氧化铝层通过原子层沉积(ALD)生长。通过钙传导测试,由对二甲苯 C 和氧化铝的三个二元化合物组成的薄膜显示出较低的水蒸气透过率(WVTR),为 8.7 × 10-4 g m-2 day-1 (25 °C, 100% RH)。封装的 OSCs 在水中浸泡 624 小时后仍能保持其初始效率的 80%,在环境气氛中连续光照 1156 小时后仍能保持其初始效率的 81%。
{"title":"Encapsulation of flexible organic solar cells via parylene and alumina dyads","authors":"Hui Zheng, Ruiyu Tian, Xin Lu, Xianmin Zhou, Jianping Chen, Xinlu Liu, Yinhua Zhou","doi":"10.1016/j.orgel.2024.107035","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107035","url":null,"abstract":"<div><p>Robust encapsulation is indispensable for flexible organic solar cells (OSCs) moving into practical applications because the materials and interfaces of the cells are susceptible to water vapor and oxygen under illumination. Fleixble barrier films are one of the key parts of the encapsulation. In this work, we report the fabrication of flexible barrier films comprising of alternating parylene C and alumina dyads, and the application of these barrier films to encapsulate flexible OSCs. Parylene C layers are deposited by chemical vapor deposition (CVD) and dense alumina layers are grown by atomic layer deposition (ALD). The fabricated film comprising of three dyads of parylene C and alumina shows a low water vapor transmission rate (WVTR) of 8.7 × 10<sup>−4</sup> g m<sup>−2</sup> day<sup>−1</sup> (25 °C, 100% RH) devrived by calcium conductance test. Encapsulated OSCs could retain 80% of their initial efficiency after immersed into water for 624 h, and could retain 81% of their initial efficiency under continuous illumination for 1156 h in ambient atmosphere.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140290303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-22DOI: 10.1016/j.orgel.2024.107033
Kaushlendra Agrahari , Ming Han Chi , S. Lakshmi Priya , Yu Han Cheng , Yu Wu Wang
This study explores the physical properties and electrical characteristics of a regioregular poly 3-hexylthiophene (rr-P3HT) semiconductor blended with the polymer insulator polystyrene. Given the high operating voltage required by conventional P3HT transistors, we employed a hybrid dielectric layer, combining plasma-reacted metal oxide with a polymer pre-layer (AlOx/PMMA and HfOx/PMMA), to reduce the operating voltage of P3HT transistors. As a result, an operating voltage lower than −5 V for the blended sample was achieved. The structural, morphological, and electrical properties of the prepared blended sample were investigated using XRD, AFM, XPS, UV–Visible spectroscopy, Raman spectroscopy, and I–V characteristics. The blended sample exhibits improved crystalline ordering and an extended effective conjugation length, accompanied by an increased formation of dendritic P3HT fibrils that enhance UV absorption. PS captures generated electrons, effectively delaying their recombination with generated holes in P3HT. This leads to heightened UV responsivity in P3HT/PS transistors. The key discovery of this study is the ultra-low power consumption UV sensing device. The blended sample, illuminated with a UV intensity of 550 μW/cm2, exhibited the highest sensitivity of 194.5, nearly 60 times higher than that of pristine P3HT. Consequently, our investigated device shows promise for applications in visible-blind sunlight or environmental monitoring systems, given its ultra-high-power efficiency.
{"title":"Low voltage driven P3HT/PS phototransistor for ultra-high power efficiency UV sensing","authors":"Kaushlendra Agrahari , Ming Han Chi , S. Lakshmi Priya , Yu Han Cheng , Yu Wu Wang","doi":"10.1016/j.orgel.2024.107033","DOIUrl":"10.1016/j.orgel.2024.107033","url":null,"abstract":"<div><p>This study explores the physical properties and electrical characteristics of a regioregular poly 3-hexylthiophene (rr-P3HT) semiconductor blended with the polymer insulator polystyrene. Given the high operating voltage required by conventional P3HT transistors, we employed a hybrid dielectric layer, combining plasma-reacted metal oxide with a polymer pre-layer (AlO<sub>x</sub>/PMMA and HfO<sub>x</sub>/PMMA), to reduce the operating voltage of P3HT transistors. As a result, an operating voltage lower than −5 V for the blended sample was achieved. The structural, morphological, and electrical properties of the prepared blended sample were investigated using XRD, AFM, XPS, UV–Visible spectroscopy, Raman spectroscopy, and I–V characteristics. The blended sample exhibits improved crystalline ordering and an extended effective conjugation length, accompanied by an increased formation of dendritic P3HT fibrils that enhance UV absorption. PS captures generated electrons, effectively delaying their recombination with generated holes in P3HT. This leads to heightened UV responsivity in P3HT/PS transistors. The key discovery of this study is the ultra-low power consumption UV sensing device. The blended sample, illuminated with a UV intensity of 550 μW/cm<sup>2</sup>, exhibited the highest sensitivity of 194.5, nearly 60 times higher than that of pristine P3HT. Consequently, our investigated device shows promise for applications in visible-blind sunlight or environmental monitoring systems, given its ultra-high-power efficiency.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140269983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-20DOI: 10.1016/j.orgel.2024.107036
Guohong Li , Xiansheng Li , Xin Luo , Zetian Huang , Daqing Zhang , Jinhao Zhou , Kai Zhang , Haitao Zhou , Bo Xu , Jinhai Huang , Zhenyuan Xia , Hua Wang
In this work, we designed and synthesized two new hole-transporting materials with a nonplanar three-dimensional (3D) conformation. They were achieved by incorporating spiro[fluorene-9,9′-xanthene] as a cross-shaped configuration scaffold and adding either mono- (H1) or bis- benzodioxino[2,3-b]pyrazine (H2) pyrazine as pendant groups. Both compounds exhibit remarkable thermal stability, with thermal decomposition temperature (Td) of 462 (H1) and 504 °C (H2), respectively. Moreover, the structural substitution with benzodioxino[2,3-b]pyrazine units successfully aligned the energy levels of both materials with the perovskite quantum dot luminescence layer. Hereby, the fabricated perovskite QLEDs using H1 as hole-transporting materials (HTMs) featured an excellent average external quantum efficiency (EQE) of up to 9.5% with a maximum luminance of 22368 cd m−2, which is much higher than that of the H2-based devices with an EQE of 6.6% under the same conditions. The excellent device performance from H1 can be attributed to its asymmetric structure by the introduction of monosubstituted benzodioxino[2,3-b]pyrazine groups, as evidenced by its high hole mobility of 1.90 × 10−4 cm2 V−1 s−1 and improved interface interaction with adjunct layers. Thus, this design approach may bring a fresh perspective to the utilization of solution-processable small-molecule HTMs in high-performance Pe-QLEDs and other optoelectronics in the future.
{"title":"Spiro[fluorene-9,9′-xanthene]-based hole transporting materials modulated by mono- and bis- benzodioxino[2,3-b]pyrazine pendant groups for perovskite QLEDs","authors":"Guohong Li , Xiansheng Li , Xin Luo , Zetian Huang , Daqing Zhang , Jinhao Zhou , Kai Zhang , Haitao Zhou , Bo Xu , Jinhai Huang , Zhenyuan Xia , Hua Wang","doi":"10.1016/j.orgel.2024.107036","DOIUrl":"10.1016/j.orgel.2024.107036","url":null,"abstract":"<div><p>In this work, we designed and synthesized two new hole-transporting materials with a nonplanar three-dimensional (3D) conformation. They were achieved by incorporating spiro[fluorene-9,9′-xanthene] as a cross-shaped configuration scaffold and adding either mono- (<strong>H1</strong>) or bis- benzodioxino[2,3-b]pyrazine (<strong>H2</strong>) pyrazine as pendant groups. Both compounds exhibit remarkable thermal stability, with thermal decomposition temperature (<em>T</em><sub>d</sub>) of 462 (<strong>H1</strong>) and 504 °C (<strong>H2</strong>), respectively. Moreover, the structural substitution with benzodioxino[2,3-b]pyrazine units successfully aligned the energy levels of both materials with the perovskite quantum dot luminescence layer. Hereby, the fabricated perovskite QLEDs using <strong>H1</strong> as <strong>hole-transporting materials</strong> (HTMs) featured an excellent average external quantum efficiency (EQE) of up to 9.5% with a maximum luminance of 22368 cd m<sup>−2</sup>, which is much higher than that of the <strong>H2</strong>-based devices with an EQE of 6.6% under the same conditions. The excellent device performance from <strong>H1</strong> can be attributed to its asymmetric structure by the introduction of monosubstituted benzodioxino[2,3-b]pyrazine groups, as evidenced by its high hole mobility of 1.90 × 10<sup>−4</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and improved interface interaction with adjunct layers. Thus, this design approach may bring a fresh perspective to the utilization of solution-processable small-molecule HTMs in high-performance Pe-QLEDs and other optoelectronics in the future.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140279958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-18DOI: 10.1016/j.orgel.2024.107034
Yu Wu Wang, Pravinraj Selvaraj, Yu Han Cheng, Zheng Han Chen, Ming Han Chi
The demand for next-generation organic field-effect transistors (OFETs) with low operating voltage is becoming gradually attractive in many application areas, such as flexible/wearable medical sensors and stretchable electronics. While using high dielectric materials is a potent approach, it often results in a decline in field-effect mobility or on/off ratio. Unfortunately, achieving low-voltage operation has hindered practical applications, compromising device performance. Here, we discovered for the first time a novel class of low-driving voltage pentacene transistors adopting gate insulators composed of nitrogen-plasma-reacted AlNx, TiNx, and TaNx. This exciting discovery is simple, affordable, environmentally friendly, and secure. X-ray photoelectron spectrometer (XPS) analysis reveals that the as-formed metal nitrides are composited with certain native oxide components, exhibiting outstanding leakage current blocking capacity and a high dielectric constant. Further, the surface energy of metal nitrides was altered by applying a thin layer of poly-(4-vinylphenol) (PVP). This modification improved the growth of pentacene grains and the insulator/pentacene interface. The best devices by comprehensive evaluation, the TiNx samples, achieve a high average of field-effect mobility ∼1.41 cm2/Vs, a subthreshold swing of 0.19 V/dec, an on/off current ratio of ∼104, and a turn-on voltage close to 0 V, which shows promising potential candidates for the flexible electronic devices, optoelectronic devices, and neuromorphic application.
{"title":"Power-efficient and high-performance potential of pentacene transistors enabled by metal-nitride gate insulators fabricated with nitrogen plasma","authors":"Yu Wu Wang, Pravinraj Selvaraj, Yu Han Cheng, Zheng Han Chen, Ming Han Chi","doi":"10.1016/j.orgel.2024.107034","DOIUrl":"10.1016/j.orgel.2024.107034","url":null,"abstract":"<div><p>The demand for next-generation organic field-effect transistors (OFETs) with low operating voltage is becoming gradually attractive in many application areas, such as flexible/wearable medical sensors and stretchable electronics. While using high dielectric materials is a potent approach, it often results in a decline in field-effect mobility or on/off ratio. Unfortunately, achieving low-voltage operation has hindered practical applications, compromising device performance. Here, we discovered for the first time a novel class of low-driving voltage pentacene transistors adopting gate insulators composed of nitrogen-plasma-reacted AlN<sub>x</sub>, TiN<sub>x</sub>, and TaN<sub>x</sub>. This exciting discovery is simple, affordable, environmentally friendly, and secure. X-ray photoelectron spectrometer (XPS) analysis reveals that the as-formed metal nitrides are composited with certain native oxide components, exhibiting outstanding leakage current blocking capacity and a high dielectric constant. Further, the surface energy of metal nitrides was altered by applying a thin layer of poly-(4-vinylphenol) (PVP). This modification improved the growth of pentacene grains and the insulator/pentacene interface. The best devices by comprehensive evaluation, the TiN<sub>x</sub> samples, achieve a high average of field-effect mobility ∼1.41 cm<sup>2</sup>/Vs, a subthreshold swing of 0.19 V/dec, an on/off current ratio of ∼10<sup>4</sup>, and a turn-on voltage close to 0 V, which shows promising potential candidates for the flexible electronic devices, optoelectronic devices, and neuromorphic application.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140169821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-17DOI: 10.1016/j.orgel.2024.107025
Chenghao Liu , Huitian Du , Yuan Yu , Zhen Chen , Junfeng Ren , Jihui Fan , Qiang Liu , Shenghao Han , Zhiyong Pang
Interface exciplex organic light-emitting diodes (OLEDs) have attracted intense attention due to the advantages including well-confined recombination regions, barrier-free charge transport and thermally activated delayed fluorescence (TADF) characteristics. To investigate the spin evolutions and dynamics of electron-hole (e-h) pairs, such as polaron pairs (PPs) and charge transfer (CT) excitons, in interface exciplex OLEDs is crucial for a better understanding on their energy gain and loss mechanisms. In this work, microscopic dynamics of e-h pairs in interface exciplex OLEDs were investigated by magneto-electroluminescence (MEL) and magneto-conductivity (MC) responses. The interface exciplex OLEDs were fabricated using 4,4,4-tris(N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA) as the donor and 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T) as the acceptor. Hyperfine interaction (HFI)- and different g-factors between electrons and holes (Δg mechanism)-dominated spin flip processes, and recombination and dissociation processes such as triplet-triplet annihilation (TTA) and triplet-charge annihilation (TQA) were identified, and their changes with temperature and current were explored. Our results may provide valuable insights into the evolution of carriers and facilitate the development of interface exciplex-based OLEDs.
{"title":"Dynamics of electron-hole pairs in interface exciplex OLEDs investigated by magnetic field effects","authors":"Chenghao Liu , Huitian Du , Yuan Yu , Zhen Chen , Junfeng Ren , Jihui Fan , Qiang Liu , Shenghao Han , Zhiyong Pang","doi":"10.1016/j.orgel.2024.107025","DOIUrl":"10.1016/j.orgel.2024.107025","url":null,"abstract":"<div><p>Interface exciplex organic light-emitting diodes (OLEDs) have attracted intense attention due to the advantages including well-confined recombination regions, barrier-free charge transport and thermally activated delayed fluorescence (TADF) characteristics. To investigate the spin evolutions and dynamics of electron-hole (e-h) pairs, such as polaron pairs (PPs) and charge transfer (CT) excitons, in interface exciplex OLEDs is crucial for a better understanding on their energy gain and loss mechanisms. In this work, microscopic dynamics of e-h pairs in interface exciplex OLEDs were investigated by magneto-electroluminescence (MEL) and magneto-conductivity (MC) responses. The interface exciplex OLEDs were fabricated using 4,4,4-tris(N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA) as the donor and 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine (T2T) as the acceptor. Hyperfine interaction (HFI)- and different <em>g</em>-factors between electrons and holes (Δ<em>g</em> mechanism)-dominated spin flip processes, and recombination and dissociation processes such as triplet-triplet annihilation (TTA) and triplet-charge annihilation (TQA) were identified, and their changes with temperature and current were explored. Our results may provide valuable insights into the evolution of carriers and facilitate the development of interface exciplex-based OLEDs.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140169988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-09DOI: 10.1016/j.orgel.2024.107019
Haoyu Liu , Tong Shan , Na Yu , Nan Zheng , Liping Zhu , Zaifei Ma , Meifang Zhu
The high energy loss (Eloss) in organic solar cells (OSCs) is being the one of major problem, which limit the power conversion efficiency (PCE) of OSCs. In this work, we designed and synthesized three perylene diimide (PDI)-based Acceptor’-Donor-Acceptor-Donor- Acceptor’ (A′-DAD-A′) small molecules namely anti-PDFC-Cx (C8, C10, and C12) by changing the length of linear chains on IDT cores to investigate how the length of linear side chain affects Eloss and the power conversion efficiencies (PCEs) of OSCs. The optical energy bandgap and stacking mode for three anti-PDFC-Cx (C8, C10, and C12) remain the same, which were not influenced by the different lengths of side chains. Increasing the length of side chains on IDT cores from C8 to C10 and C12 would improve the PCE of PM6: anti-PDFC-Cx based devices from 11.52% to 12.43% and 12.27%, particularly the Voc increasing from 0.98 V of anti-PDFC-C8 and 1.00 V of anti-PDFC-C10 to 1.02 V of anti-PDFC-C12. Eloss analysis indicated the value of Eloss reduced as the length increases from C8, to C12. These results demonstate linear side chain engineer is an effective method to reduce Eloss and realize high PCE on the bases of not modulating the stacking mode of acceptor.
{"title":"Suppress energy loss to boost power conversion efficiency of organic photovoltaics with linear side chains modulation","authors":"Haoyu Liu , Tong Shan , Na Yu , Nan Zheng , Liping Zhu , Zaifei Ma , Meifang Zhu","doi":"10.1016/j.orgel.2024.107019","DOIUrl":"10.1016/j.orgel.2024.107019","url":null,"abstract":"<div><p>The high energy loss (<em>E</em><sub>loss</sub>) in organic solar cells (OSCs) is being the one of major problem, which limit the power conversion efficiency (PCE) of OSCs. In this work, we designed and synthesized three perylene diimide (PDI)-based Acceptor’-Donor-Acceptor-Donor- Acceptor’ (A′-DAD-A′) small molecules namely <em>anti</em>-PDFC-Cx (C8, C10, and C12) by changing the length of linear chains on IDT cores to investigate how the length of linear side chain affects <em>E</em><sub>loss</sub> and the power conversion efficiencies (PCEs) of OSCs. The optical energy bandgap and stacking mode for three <em>anti</em>-PDFC-Cx (C8, C10, and C12) remain the same, which were not influenced by the different lengths of side chains. Increasing the length of side chains on IDT cores from C8 to C10 and C12 would improve the PCE of PM6: <em>anti</em>-PDFC-Cx based devices from 11.52% to 12.43% and 12.27%, particularly the <em>V</em><sub>oc</sub> increasing from 0.98 V of <em>anti</em>-PDFC-C8 and 1.00 V of <em>anti</em>-PDFC-C10 to 1.02 V of <em>anti</em>-PDFC-C12. <em>E</em><sub>loss</sub> analysis indicated the value of <em>E</em><sub>loss</sub> reduced as the length increases from C8, to C12. These results demonstate linear side chain engineer is an effective method to reduce <em>E</em><sub>loss</sub> and realize high PCE on the bases of not modulating the stacking mode of acceptor.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140107536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-08DOI: 10.1016/j.orgel.2024.107028
Lin Lin, Weiao Yang, Zuowei Liu, Jihao Li, Shichuan Ke, Zhidong Lou, Yanbing Hou, Feng Teng, Yufeng Hu
The perceived diminished sensitivity of Polymer Light-Emitting Electrochemical Cells (LECs) to electrode material and active layer thickness compared to Organic Light-Emitting Diodes (OLEDs) due to electrochemical doping, positions them as a focal point in emerging electronic applications. However, empirical evidence reveals the electrode still influences device performance. Simultaneously, electrochemical doping involves side reactions at the cathode, predominantly with oxygen. Nevertheless, the impact of oxygen reduction reaction on the device performance concerning electrode effects remains underexplored. This study centers on the pivotal influence of oxygen reduction reaction on the electrode effect in LECs. The investigation of the doping process for various electrodes and active layer thicknesses was conducted using photoluminescence imaging. Through controlling temperatures and vacuum levels, obtained time-current curves undergo fitting procedures, which enables quantitative analysis of oxygen reduction reaction effects on both electrode and film thickness. The results underscore the impact of oxygen reduction reaction on the performance of the device induced by electrodes, emphasizing the pronounced effect on the activation energy of the reduction reaction dictated by both the electrode work function and oxygen concentration. In addition, this study elucidates that the utilization of a low-work-function bottom contact in conjunction with a thicker active layer exerts a discernible influence on the device's current magnitude.
{"title":"Oxygen reduction reaction induced electrode effects in polymer light-emitting electrochemical cells","authors":"Lin Lin, Weiao Yang, Zuowei Liu, Jihao Li, Shichuan Ke, Zhidong Lou, Yanbing Hou, Feng Teng, Yufeng Hu","doi":"10.1016/j.orgel.2024.107028","DOIUrl":"10.1016/j.orgel.2024.107028","url":null,"abstract":"<div><p>The perceived diminished sensitivity of Polymer Light-Emitting Electrochemical Cells (LECs) to electrode material and active layer thickness compared to Organic Light-Emitting Diodes (OLEDs) due to electrochemical doping, positions them as a focal point in emerging electronic applications. However, empirical evidence reveals the electrode still influences device performance. Simultaneously, electrochemical doping involves side reactions at the cathode, predominantly with oxygen. Nevertheless, the impact of oxygen reduction reaction on the device performance concerning electrode effects remains underexplored. This study centers on the pivotal influence of oxygen reduction reaction on the electrode effect in LECs. The investigation of the doping process for various electrodes and active layer thicknesses was conducted using photoluminescence imaging. Through controlling temperatures and vacuum levels, obtained time-current curves undergo fitting procedures, which enables quantitative analysis of oxygen reduction reaction effects on both electrode and film thickness. The results underscore the impact of oxygen reduction reaction on the performance of the device induced by electrodes, emphasizing the pronounced effect on the activation energy of the reduction reaction dictated by both the electrode work function and oxygen concentration. In addition, this study elucidates that the utilization of a low-work-function bottom contact in conjunction with a thicker active layer exerts a discernible influence on the device's current magnitude.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140105175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.1016/j.orgel.2024.107023
Emilia Benvenuti , Salvatore Moschetto , Marco Angelini , Franco Marabelli , Marco Natali , Paola Pellacani , Margherita Bolognesi , Mario Prosa , Stefano Toffanin
—On-site analysis of multiple analytes from different classes (such as heavy metals, proteins and small molecules), at the sensitivity required for a selected application, is a hard technological challenge. In this context, optical sensing in miniaturized systems has the largest potential. We present here the design and optimization of a miniaturized optical sensor with multiple channels, capable of multimodal optical detection in each channel, and the proof-of-concept realization of sub-systems providing two complementary detection modes: plasmon enhanced fluorescence and localized surface plasmon resonance. The multichannel (enabling multiplexing) and multimodal optical sensor is designed to have a total size of one inch-square and optimized sensing performance, obtained by combining organic optoelectronic and nanoplasmonic components.
{"title":"Design of an optical sensor based on organic optoelectronics and nanoplasmonics for multiplex and multimodal detection","authors":"Emilia Benvenuti , Salvatore Moschetto , Marco Angelini , Franco Marabelli , Marco Natali , Paola Pellacani , Margherita Bolognesi , Mario Prosa , Stefano Toffanin","doi":"10.1016/j.orgel.2024.107023","DOIUrl":"10.1016/j.orgel.2024.107023","url":null,"abstract":"<div><p>—On-site analysis of multiple analytes from different classes (such as heavy metals, proteins and small molecules), at the sensitivity required for a selected application, is a hard technological challenge. In this context, optical sensing in miniaturized systems has the largest potential. We present here the design and optimization of a miniaturized optical sensor with multiple channels, capable of multimodal optical detection in each channel, and the proof-of-concept realization of sub-systems providing two complementary detection modes: plasmon enhanced fluorescence and localized surface plasmon resonance. The multichannel (enabling multiplexing) and multimodal optical sensor is designed to have a total size of one inch-square and optimized sensing performance, obtained by combining organic optoelectronic and nanoplasmonic components.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S156611992400034X/pdfft?md5=6d8252a30b6fb737d7a95a48eb6892ec&pid=1-s2.0-S156611992400034X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140105269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.1016/j.orgel.2024.107026
Jiong Dong , Zhuonan Shi , Shina Li , Kang Li , Zichen Yin , Yisa Liu , Lili Xu , Ruixin Ma
The presence of defects in the perovskite absorption layer significantly reduces the photovoltaic performance of perovskite solar cells (PSCs). In this study, a Lewis base Triethanolamine (TEA) is introduced on the perovskite surface, and the hydrogen bond formed by its hydroxyl group with Pb ions or I ions fix the halogen anion of perovskite and suppresses the migration of ions in perovskite. TEA has an obvious effect at the grain boundary, significantly improving the surface quality of the perovskite film and the device's efficiency. Compared with the pristine device (19.26%), the device after passivation at the optimal concentration exhibits better photovoltaic performance and stability, which obtained the champion efficiency of 20.39% and remained at 88.3% of the initial efficiency after being aged 1080 h without encapsulation. We expect that adding TEA to the perovskite surface will provide a useful strategy to enhance the performance of PSCs, as well as air and thermal stability.
过氧化物吸收层中缺陷的存在会大大降低过氧化物太阳能电池(PSCs)的光电性能。本研究在包晶表面引入了路易斯碱三乙醇胺(TEA),其羟基与铅离子或 I 离子形成的氢键固定了包晶的卤素阴离子,抑制了离子在包晶中的迁移。三乙醇胺在晶界处有明显的作用,能显著改善透辉石薄膜的表面质量,提高器件的效率。与原始器件(19.26%)相比,以最佳浓度钝化后的器件表现出更好的光伏性能和稳定性,获得了 20.39% 的冠军效率,并且在不封装的情况下老化 1080 小时后,效率仍保持在初始效率的 88.3%。我们预计,在过氧化物表面添加三乙醇胺将为提高 PSC 的性能、空气稳定性和热稳定性提供一种有用的策略。
{"title":"Enhancing efficiency and stability of perovskite solar cells by introduction of triethanolamine","authors":"Jiong Dong , Zhuonan Shi , Shina Li , Kang Li , Zichen Yin , Yisa Liu , Lili Xu , Ruixin Ma","doi":"10.1016/j.orgel.2024.107026","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107026","url":null,"abstract":"<div><p>The presence of defects in the perovskite absorption layer significantly reduces the photovoltaic performance of perovskite solar cells (PSCs). In this study, a Lewis base Triethanolamine (TEA) is introduced on the perovskite surface, and the hydrogen bond formed by its hydroxyl group with Pb ions or I ions fix the halogen anion of perovskite and suppresses the migration of ions in perovskite. TEA has an obvious effect at the grain boundary, significantly improving the surface quality of the perovskite film and the device's efficiency. Compared with the pristine device (19.26%), the device after passivation at the optimal concentration exhibits better photovoltaic performance and stability, which obtained the champion efficiency of 20.39% and remained at 88.3% of the initial efficiency after being aged 1080 h without encapsulation. We expect that adding TEA to the perovskite surface will provide a useful strategy to enhance the performance of PSCs, as well as air and thermal stability.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140104150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}