Pub Date : 2025-05-25DOI: 10.1016/j.orgel.2025.107277
Qinjun Sun , Jian Zhao , Hua Ding , Xiaoqian Wang , Qianwen Hu , LiYan Gao , Yuying Hao
With high flexibility, conductivity and transparency, metal nanotroughs (NTRs) are considered to be the most promising candidates for flexibility transparent electrode. Here, we report metal NTR films fabricated by electro-spun and thermal evaporation. By optimizing steam treatment time, copper-silver ratio, coverage rate, and transfer process, smooth and continuous metal NTR films were obtained. The Cu/Ag NTR-polyacrylonitrile (PAN) film displayed superior photoelectric properties: transmitted 94.4 % of visible light (550 nm), showed a low sheet resistance of 2.48 Ω/□ and a very high quality factor of 2.27 × 10−1 (Ω/□)−1. Meanwhile, the relative change rate of resistance was less than 0.002 under a bending radius of 5 mm after 10,000 cycles. The results indicate that composite metal nanotroughs provide a new way for the preparation of high performance flexible transparent electrode.
{"title":"Cu/Ag composite nanotrough embedded polyacrylonitrile film: Transparent conducting electrodes with excellent flexibility and a high quality factor","authors":"Qinjun Sun , Jian Zhao , Hua Ding , Xiaoqian Wang , Qianwen Hu , LiYan Gao , Yuying Hao","doi":"10.1016/j.orgel.2025.107277","DOIUrl":"10.1016/j.orgel.2025.107277","url":null,"abstract":"<div><div>With high flexibility, conductivity and transparency, metal nanotroughs (NTRs) are considered to be the most promising candidates for flexibility transparent electrode. Here, we report metal NTR films fabricated by electro-spun and thermal evaporation. By optimizing steam treatment time, copper-silver ratio, coverage rate, and transfer process, smooth and continuous metal NTR films were obtained. The Cu/Ag NTR-polyacrylonitrile (PAN) film displayed superior photoelectric properties: transmitted 94.4 % of visible light (550 nm), showed a low sheet resistance of 2.48 Ω/□ and a very high quality factor of 2.27 × 10<sup>−1</sup> (Ω/□)<sup>−1</sup>. Meanwhile, the relative change rate of resistance was less than 0.002 under a bending radius of 5 mm after 10,000 cycles. The results indicate that composite metal nanotroughs provide a new way for the preparation of high performance flexible transparent electrode.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107277"},"PeriodicalIF":2.7,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The aims of this study is to investigate the charge transport and Non-Linear Optical (NLO) responses of Chen and Shen (2017), Xiao et al. (2021), Hoffmann (2014), Liégeois and Champagne (2012), Zou et al. (2021) and Wang et al. (2019) [7,9,11,13,15,17]Helicenes. The computational framework DFT/B3LYP/6-311G (d,p) methodology ties the highlights to the computational framework in analyzing the optoelectronic properties and NLO parameters of the Helicenes series. The TD-DFT calculations with same level are utilized to mimic the absorption properties from ground to excited state. The numerical ranges for absorption maxima (370–465 nm) and energy gaps () are clearly stated, offering precise insight into the benzene rings chiroptical succession. Ionization potential (I.P.), electron affinity (E.A.), reorganization energies (λ), frontier molecular orbitals (FMOs) and Nucleus Independent Chemical Shift (NICS) are evaluated for the reported Helicenes. The calculated λh and λe decreases with increasing helicene size and ranges from 236 to 101 meV and 247-213 meV, respectively. The static and dynamic first and second hyperpolarizabilities connects the charge transport properties (λh < λe) to the potential NLO optical responses. Hyperpolarizabilities in the order of 10−24 to 10−31 esu, suggest these Carbo [n]Helicenes as promising candidates for advanced NLO materials.
{"title":"Understanding of charge transport and non-linear optical responses into π-extended Carbo[n]Helicenes for organic optoelectronic applications","authors":"Vipin Kumar , Simplice Koudjina , Guy Y.S. Atohoun , Prabhakar Chetti","doi":"10.1016/j.orgel.2025.107279","DOIUrl":"10.1016/j.orgel.2025.107279","url":null,"abstract":"<div><div>The aims of this study is to investigate the charge transport and Non-Linear Optical (NLO) responses of Chen and Shen (2017), Xiao et al. (2021), Hoffmann (2014), Liégeois and Champagne (2012), Zou et al. (2021) and Wang et al. (2019) [7,9,11,13,15,17]<strong>Helicenes</strong>. The computational framework DFT/B3LYP/6-311G (d,p) methodology ties the highlights to the computational framework in analyzing the optoelectronic properties and NLO parameters of the Helicenes series. The TD-DFT calculations with same level are utilized to mimic the absorption properties from ground to excited state. The numerical ranges for absorption maxima (370–465 nm) and energy gaps (<span><math><mrow><msub><mrow><mo>Δ</mo><mi>E</mi></mrow><mrow><mi>g</mi><mi>a</mi><mi>p</mi></mrow></msub></mrow></math></span>) are clearly stated, offering precise insight into the benzene rings chiroptical succession. Ionization potential (I.P.), electron affinity (E.A.), reorganization energies (λ), frontier molecular orbitals (FMOs) and Nucleus Independent Chemical Shift (NICS) are evaluated for the reported Helicenes. The calculated λ<sub>h</sub> and λ<sub>e</sub> decreases with increasing helicene size and ranges from 236 to 101 meV and 247-213 meV, respectively. The static and dynamic first and second hyperpolarizabilities connects the charge transport properties (λ<sub>h</sub> < λ<sub>e</sub>) to the potential NLO optical responses. Hyperpolarizabilities in the order of 10<sup>−24</sup> to 10<sup>−31</sup> esu, suggest these Carbo [n]Helicenes as promising candidates for advanced NLO materials.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107279"},"PeriodicalIF":2.7,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144146783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-20DOI: 10.1016/j.orgel.2025.107276
Xiaogang Chen , Aohuan Shi , Kailiang Bai , Wenshu Chen , Yi Long , Yao Li , Feiping Lu
Multiplication-type organic photodetectors exhibit advantages such as high gain, broad spectral response, flexibility, and low cost, making them promising candidates for applications in weak light detection, biomedical imaging, wearable devices, and optical communication. To explore the multiplication mechanism of single-carrier-transport-based multiplication-type organic photodetectors, this study has fabricated electron trap-type organic photodetectors with a structure of ITO/PEDOT: PSS/Active-layer/Al using the solution spin-coating method, and the active layers(ACL) were composed of binary blends of classical systems of P3HT:PC61BM (100:1, wt/wt), PBDB-T: ITIC (100:1, wt/wt), or PTB7:PC71BM (100:1, wt/wt). The absorption spectra of the active layers and the external quantum efficiency of the devices were measured, and the light intensity distribution and the distribution of photogenerated charge carriers in the devices were simulated and calculated. By comparing the absorption spectra of the active layers, the external quantum efficiency of the devices, and the distribution curve of photo-generated electrons near the Al electrode, it can be concluded that the multiplication effect in the single-carrier-transport-based multiplication-type organic photodetector is explained by the quantum tunneling injection of holes into the external circuit, which is induced by charge trapped by the interface trap near the aluminum electrode. This study provides valuable insights into the multiplication mechanism of multiplication-type organic photodetectors, offering a theoretical basis for the development and fabrication of high-performance multiplication-type organic photodetectors.
{"title":"Research on the multiplication mechanism of single-carrier transport-based multiplication-type organic photodetector","authors":"Xiaogang Chen , Aohuan Shi , Kailiang Bai , Wenshu Chen , Yi Long , Yao Li , Feiping Lu","doi":"10.1016/j.orgel.2025.107276","DOIUrl":"10.1016/j.orgel.2025.107276","url":null,"abstract":"<div><div>Multiplication-type organic photodetectors exhibit advantages such as high gain, broad spectral response, flexibility, and low cost, making them promising candidates for applications in weak light detection, biomedical imaging, wearable devices, and optical communication. To explore the multiplication mechanism of single-carrier-transport-based multiplication-type organic photodetectors, this study has fabricated electron trap-type organic photodetectors with a structure of ITO/PEDOT: PSS/Active-layer/Al using the solution spin-coating method, and the active layers(ACL) were composed of binary blends of classical systems of P3HT:PC<sub>61</sub>BM (100:1, wt/wt), PBDB-T: ITIC (100:1, wt/wt), or PTB7:PC<sub>71</sub>BM (100:1, wt/wt). The absorption spectra of the active layers and the external quantum efficiency of the devices were measured, and the light intensity distribution and the distribution of photogenerated charge carriers in the devices were simulated and calculated. By comparing the absorption spectra of the active layers, the external quantum efficiency of the devices, and the distribution curve of photo-generated electrons near the Al electrode, it can be concluded that the multiplication effect in the single-carrier-transport-based multiplication-type organic photodetector is explained by the quantum tunneling injection of holes into the external circuit, which is induced by charge trapped by the interface trap near the aluminum electrode. This study provides valuable insights into the multiplication mechanism of multiplication-type organic photodetectors, offering a theoretical basis for the development and fabrication of high-performance multiplication-type organic photodetectors.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107276"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-19DOI: 10.1016/j.orgel.2025.107278
YanChao Xu , Xingchong Liu , Yongshan Peng , Tanggui He , Anmin Tang , Haimin Li , Hanyu Wang
Tin dioxide (SnO2) is a promising material for the electron transport layer in n-i-p perovskite solar cells, but its performance is limited by internal defects and band misalignment with the perovskite layer. In this study, para-hydroxybenzenesulfonamide (PCBS) was used to modify the buried interface between SnO2 and perovskite. The -COOH and S=O groups in PCBS passivate the -OH and Sn in SnO2, respectively. Meanwhile, the -NH2 group passivates the excess Pb2+ within the perovskite film. The PCBS modification enhances the hydrophobicity of the SnO2 surface, promoting the growth of high-quality, large-grain perovskite films, thereby significantly suppressing non-radiative recombination in perovskite solar cells (PSCs). Moreover, the PCBS modification introduces better energy-level alignment between the SnO2 and perovskite layers, enabling more efficient electron extraction. Finally, the PCBS interface enhanced the power conversion efficiency (PCE) of PSCs to 21.47 %. After 1440 h of storage in a N2 atmosphere, the unencapsulated PSCs with interface alteration kept 93.9 % of their original value. These results indicate that burying the perovskite layer with PCBS is a promising strategy to improve the performance of PSCs.
{"title":"Interface modification by sulfonamide for high-efficiency and stable perovskite solar cells","authors":"YanChao Xu , Xingchong Liu , Yongshan Peng , Tanggui He , Anmin Tang , Haimin Li , Hanyu Wang","doi":"10.1016/j.orgel.2025.107278","DOIUrl":"10.1016/j.orgel.2025.107278","url":null,"abstract":"<div><div>Tin dioxide (SnO<sub>2</sub>) is a promising material for the electron transport layer in n-i-p perovskite solar cells, but its performance is limited by internal defects and band misalignment with the perovskite layer. In this study, para-hydroxybenzenesulfonamide (PCBS) was used to modify the buried interface between SnO<sub>2</sub> and perovskite. The -COOH and S=O groups in PCBS passivate the -OH and Sn in SnO<sub>2</sub>, respectively. Meanwhile, the -NH<sub>2</sub> group passivates the excess Pb<sup>2+</sup> within the perovskite film. The PCBS modification enhances the hydrophobicity of the SnO<sub>2</sub> surface, promoting the growth of high-quality, large-grain perovskite films, thereby significantly suppressing non-radiative recombination in perovskite solar cells (PSCs). Moreover, the PCBS modification introduces better energy-level alignment between the SnO<sub>2</sub> and perovskite layers, enabling more efficient electron extraction. Finally, the PCBS interface enhanced the power conversion efficiency (PCE) of PSCs to 21.47 %. After 1440 h of storage in a N<sub>2</sub> atmosphere, the unencapsulated PSCs with interface alteration kept 93.9 % of their original value. These results indicate that burying the perovskite layer with PCBS is a promising strategy to improve the performance of PSCs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107278"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144105334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-16DOI: 10.1016/j.orgel.2025.107275
Sai Liu, Jiajie Liu, Ruipeng Chen, Miao Xu, Lei Wang, Weijing Wu, Junbiao Peng
This paper presents a charge-based model for the transient laser response of an organic photodetector (OPD) device considering the relaxation process of trap states. Based on the proposed model, the microscopic relaxation process of trapped charge can be linked to the macroscopic transient characteristics of the OPD device. Consequently, an extraction method is developed to obtain the dynamic parameters of trap states. The classical P3HT: PCBM heterojunction OPD device was fabricated for transient testing. The transient test system was built using an optical chamber, current amplifier, oscilloscope, signal generator and laser. As a result, the electron capture coefficient rn and the capture cross section σ were extracted from the relaxation time of the transient current, with values of 9.77 × 10−13 cm3/s and 9.77 × 10−20 cm3, respectively.
{"title":"Extraction method of trap states dynamics parameters for organic photodetectors based on transient laser response","authors":"Sai Liu, Jiajie Liu, Ruipeng Chen, Miao Xu, Lei Wang, Weijing Wu, Junbiao Peng","doi":"10.1016/j.orgel.2025.107275","DOIUrl":"10.1016/j.orgel.2025.107275","url":null,"abstract":"<div><div>This paper presents a charge-based model for the transient laser response of an organic photodetector (OPD) device considering the relaxation process of trap states. Based on the proposed model, the microscopic relaxation process of trapped charge can be linked to the macroscopic transient characteristics of the OPD device. Consequently, an extraction method is developed to obtain the dynamic parameters of trap states. The classical P3HT: PCBM heterojunction OPD device was fabricated for transient testing. The transient test system was built using an optical chamber, current amplifier, oscilloscope, signal generator and laser. As a result, the electron capture coefficient r<sub>n</sub> and the capture cross section σ were extracted from the relaxation time of the transient current, with values of 9.77 × 10<sup>−13</sup> cm<sup>3</sup>/s and 9.77 × 10<sup>−20</sup> cm<sup>3</sup>, respectively.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107275"},"PeriodicalIF":2.7,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144099796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-14DOI: 10.1016/j.orgel.2025.107273
Sude Uluçay , Neul Gyum Ha , Arzu Kortun , Sinem Altınışık , Selin Pıravadılı , Jin Han Kwon , Hong Chul Moon , Sermet Koyuncu
Viologens are an important class of materials in organic electrochromic technology due to their n-type semiconductor properties and the high color intensity in their radical cation state. Due to their charged structures, viologens are generally ideal molecules for gel-based organic electrochromic devices, but with specific modifications, they can also be employed in thin-film-based electrochromic devices (ECDs). In this study, crosslinking reactions of viologen-based molecules (ALV-X) with various allyl group-containing counterions were conducted on ITO/Glass surfaces in the presence of a tetra-thiol-based crosslinker. The surface roughness of the resulting films varied from 4.64 nm to 8.46 nm depending on the counterion exchange. Electrochemical characterizations of the prepared viologen-based crosslinked electrodes indicated that the LUMO energy levels ranged between −4.267 eV and −4.297 eV. Viologen-based cross-linked thin films with transmittance changes close to 30 % in the visible region, 50 % in the UV region and 20 % in the NIR region with specific capacitances of 0.25 mF cm−2 have been found to be highly suitable materials, especially as cathodic layers in electrochromic/supercapacitor devices.
紫致化合物由于其n型半导体性质和在自由基阳离子态下的高显色强度而成为有机电致变色技术中重要的一类材料。由于其带电结构，viologens通常是凝胶基有机电致变色器件的理想分子，但通过特定的修饰，它们也可以用于薄膜基电致变色器件（ECDs）。在本研究中，在四巯基交联剂的存在下，在ITO/Glass表面上进行了基于violoogen的分子（ALV-X）与各种含烯丙基的反离子的交联反应。薄膜的表面粗糙度随离子交换的不同在4.64 ~ 8.46 nm之间变化。电化学表征表明，所制备的violoogen基交联电极的LUMO能级在−4.267 eV ~−4.297 eV之间。在可见光区透射率变化接近30%，紫外区透射率变化接近50%，近红外区透射率变化接近20%，比电容为0.25 mF cm−2的紫外光基交联薄膜被发现是非常合适的材料，特别是作为电致变色/超级电容器器件的阴极层。
{"title":"Electrochromic supercapacitor electrodes based on viologen-derived cross-linked thin films","authors":"Sude Uluçay , Neul Gyum Ha , Arzu Kortun , Sinem Altınışık , Selin Pıravadılı , Jin Han Kwon , Hong Chul Moon , Sermet Koyuncu","doi":"10.1016/j.orgel.2025.107273","DOIUrl":"10.1016/j.orgel.2025.107273","url":null,"abstract":"<div><div>Viologens are an important class of materials in organic electrochromic technology due to their n-type semiconductor properties and the high color intensity in their radical cation state. Due to their charged structures, viologens are generally ideal molecules for gel-based organic electrochromic devices, but with specific modifications, they can also be employed in thin-film-based electrochromic devices (ECDs). In this study, crosslinking reactions of viologen-based molecules (ALV-X) with various allyl group-containing counterions were conducted on ITO/Glass surfaces in the presence of a tetra-thiol-based crosslinker. The surface roughness of the resulting films varied from 4.64 nm to 8.46 nm depending on the counterion exchange. Electrochemical characterizations of the prepared viologen-based crosslinked electrodes indicated that the LUMO energy levels ranged between −4.267 eV and −4.297 eV. Viologen-based cross-linked thin films with transmittance changes close to 30 % in the visible region, 50 % in the UV region and 20 % in the NIR region with specific capacitances of 0.25 mF cm<sup>−2</sup> have been found to be highly suitable materials, especially as cathodic layers in electrochromic/supercapacitor devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107273"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-14DOI: 10.1016/j.orgel.2025.107269
Raghunandan B. Iyer , Maurissa Higgins , Katelyn Noack , Joshua Wolanyk , Matthew Dygert , Sarah Cady , Erik Dykstra , Rana Biswas , Ruth Shinar , Joseph Shinar
We report an investigation of the early kinetics of photogenerated carbon dangling bond (CDB) formation and annealing in organic photovoltaic bulk heterojunction (BHJ) thin film blends under oxygen- and moisture-free conditions, using X-band electron paramagnetic resonance (EPR) spectroscopy. The study focuses on donor:acceptor BHJ blends of PCE12:PCBM and PCE12:ITIC films, where PCE12 is PBDB-T. The time evolution of CDBs in such drop-cast BHJ films irradiated at 300 nm is monitored. The early kinetics of CDB formation, critical for understanding OPV degradation mechanisms, is studied. Theoretical analysis of the defect growth mechanism suggests a monomolecular defect creation model where the defect count follows a power-law tβ with irradiation time t, where β ∼ 0.55–0.58, in excellent agreement with the theoretically expected value of β = 1/2. This model is compatible with CDB formation by the holes in donor sites adjacent to acceptors, likely assisted by energy released from quenching of nearby excitons by the holes, elucidating the physical mechanism underlying CDB formation. This is significant for designing improved materials, which mitigate defect creation, and consequently advancing the development of stable OPV systems.
{"title":"Kinetics of photogenerated carbon dangling bonds in organic photovoltaic thin Films: An EPR study","authors":"Raghunandan B. Iyer , Maurissa Higgins , Katelyn Noack , Joshua Wolanyk , Matthew Dygert , Sarah Cady , Erik Dykstra , Rana Biswas , Ruth Shinar , Joseph Shinar","doi":"10.1016/j.orgel.2025.107269","DOIUrl":"10.1016/j.orgel.2025.107269","url":null,"abstract":"<div><div>We report an investigation of the early kinetics of photogenerated carbon dangling bond (CDB) formation and annealing in organic photovoltaic bulk heterojunction (BHJ) thin film blends under oxygen- and moisture-free conditions, using X-band electron paramagnetic resonance (EPR) spectroscopy. The study focuses on donor:acceptor BHJ blends of PCE12:PCBM and PCE12:ITIC films, where PCE12 is PBDB-T. The time evolution of CDBs in such drop-cast BHJ films irradiated at 300 nm is monitored. The early kinetics of CDB formation, critical for understanding OPV degradation mechanisms, is studied. Theoretical analysis of the defect growth mechanism suggests a monomolecular defect creation model where the defect count follows a power-law <em>t</em> <sup><em>β</em></sup> with irradiation time <em>t</em>, where <em>β</em> ∼ 0.55–0.58, in excellent agreement with the theoretically expected value of <em>β</em> = 1/2. This model is compatible with CDB formation by the holes in donor sites adjacent to acceptors, likely assisted by energy released from quenching of nearby excitons by the holes, elucidating the physical mechanism underlying CDB formation. This is significant for designing improved materials, which mitigate defect creation, and consequently advancing the development of stable OPV systems.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107269"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-12DOI: 10.1016/j.orgel.2025.107274
Yingquan Peng , Qinyong Dai , Nan Chen , Wenli Lv , Lei Sun , Sunan Xu , Ying Wang
Exciton diffusion length is one of the key parameters of an organic semiconductor thin film, and plays an important role in optimizing the performance of organic optoelectronic devices. By the existing photoelectronic methods for measuring the exciton diffusion length, vertical diode structure is used, which may lead to inaccuracies resulting from the electrode and charge related effects, such as enhanced quenching of excitons near the metal/organic interface and annihilation of excitons via charge-exciton interaction. Herein we propose a novel method for measuring the exciton diffusion length by incorporating the testing organic film into an organic phototransistor. In the device sample, the testing organic film is free from electrode contact and electric filed, enabling measurement free from errors related to the effects of metal electrodes. More importantly, in our method the generation and diffusion of excitons is fully isolated from photocarrier transport, eliminating the error associated with charge-exciton interactions. For demonstration, the exciton diffusion length of tin phthalocyanine (SnPc) thin film was determined to be 14.03 ± 2.76 nm, which is in good agreement with that reported in literatures.
{"title":"Determination of exciton diffusion lengths potentially free from electrodes and charge related inaccuracies","authors":"Yingquan Peng , Qinyong Dai , Nan Chen , Wenli Lv , Lei Sun , Sunan Xu , Ying Wang","doi":"10.1016/j.orgel.2025.107274","DOIUrl":"10.1016/j.orgel.2025.107274","url":null,"abstract":"<div><div>Exciton diffusion length is one of the key parameters of an organic semiconductor thin film, and plays an important role in optimizing the performance of organic optoelectronic devices. By the existing photoelectronic methods for measuring the exciton diffusion length, vertical diode structure is used, which may lead to inaccuracies resulting from the electrode and charge related effects, such as enhanced quenching of excitons near the metal/organic interface and annihilation of excitons via charge-exciton interaction. Herein we propose a novel method for measuring the exciton diffusion length by incorporating the testing organic film into an organic phototransistor. In the device sample, the testing organic film is free from electrode contact and electric filed, enabling measurement free from errors related to the effects of metal electrodes. More importantly, in our method the generation and diffusion of excitons is fully isolated from photocarrier transport, eliminating the error associated with charge-exciton interactions. For demonstration, the exciton diffusion length of tin phthalocyanine (SnPc) thin film was determined to be 14.03 ± 2.76 nm, which is in good agreement with that reported in literatures.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107274"},"PeriodicalIF":2.7,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-09DOI: 10.1016/j.orgel.2025.107272
Baoxiang Chai , Qiaoli Niu , Junhao Xiong , Jun Yang , Yuqing Chen , Wenjin Zeng , Xinwen Peng , Tao Yang , Ruidong Xia
Perovskite light-emitting diodes (PeLEDs) have exhibited tremendous potential for commercial applications in the fields of displays, lighting, and information technology. For achieving pure red electroluminescence, quasi-two-dimensional (Q-2D) perovskite based on Br/I mixed halides has been commonly used. However, during the in-situ crystallization process of perovskite films via low-temperature solution methods, the complexity of coordination among various ions leads to the presence of uncoordinated ions, resulting in numerous defects in the perovskite films. These defects significantly impact the performance and stability of PeLEDs. In this work, hydroxyethyl cellulose (HEC) was incorporated into the hole transport layer (HTL) to passivate the defects in perovskite films. Experimental results showed that the hydroxyl groups in HEC interacted with Pb2+/K+/PEA+ ions in the perovskite, contributing to the passivation of defects. Simultaneously, the addition of HEC inhibited the low-dimensional phases (n = 1, 2) and enhanced the high-dimensional phase (n = 3) in the Q-2D perovskite films. The optimized distribution of n phases was favorable for the radiative recombination. After the introduction of HEC, the external quantum efficiency (EQE) of pure red PeLEDs at 636 nm showed a significant improvement compared to the control device, from 5.31 % to 6.82 %. This strategy provides an excellent alterative to improve the electroluminescent efficiency of red PeLEDs.
{"title":"Hydroxyethyl cellulose passivation for high-efficiency pure-red perovskite light-emitting diodes","authors":"Baoxiang Chai , Qiaoli Niu , Junhao Xiong , Jun Yang , Yuqing Chen , Wenjin Zeng , Xinwen Peng , Tao Yang , Ruidong Xia","doi":"10.1016/j.orgel.2025.107272","DOIUrl":"10.1016/j.orgel.2025.107272","url":null,"abstract":"<div><div>Perovskite light-emitting diodes (PeLEDs) have exhibited tremendous potential for commercial applications in the fields of displays, lighting, and information technology. For achieving pure red electroluminescence, quasi-two-dimensional (Q-2D) perovskite based on Br/I mixed halides has been commonly used. However, during the in-situ crystallization process of perovskite films via low-temperature solution methods, the complexity of coordination among various ions leads to the presence of uncoordinated ions, resulting in numerous defects in the perovskite films. These defects significantly impact the performance and stability of PeLEDs. In this work, hydroxyethyl cellulose (HEC) was incorporated into the hole transport layer (HTL) to passivate the defects in perovskite films. Experimental results showed that the hydroxyl groups in HEC interacted with Pb<sup>2+</sup>/K<sup>+</sup>/PEA<sup>+</sup> ions in the perovskite, contributing to the passivation of defects. Simultaneously, the addition of HEC inhibited the low-dimensional phases (n = 1, 2) and enhanced the high-dimensional phase (n = 3) in the Q-2D perovskite films. The optimized distribution of n phases was favorable for the radiative recombination. After the introduction of HEC, the external quantum efficiency (EQE) of pure red PeLEDs at 636 nm showed a significant improvement compared to the control device, from 5.31 % to 6.82 %. This strategy provides an excellent alterative to improve the electroluminescent efficiency of red PeLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107272"},"PeriodicalIF":2.7,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143937262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-05-08DOI: 10.1016/j.orgel.2025.107263
KangMun Lee , Jong-Kwan Bin
Achieving higher efficiency and a longer operational lifetime is equally important yet remains a daunting task in the domain of blue phosphorescent organic light-emitting diodes (PhOLEDs). Optimizing an appropriate hole transport layer (HTL) has proven to be a potential approach for improving the performance of blue PhOLED. In the present work, we investigated a spiro-bifluorene-based SFAF HTL to develop blue PhOLEDs with high efficiency and extended operational lifetime. The spiro-bifluorene unit imparts enhanced thermal stability to the SFAF molecular structure. Further, careful management of the thickness of SFAF HTL fosters a charge balance in the emitting layer and subsequently strengthens the performance of the fabricated devices. The fabricated devices emit in the blue region, achieving an EQEmax nearing 20 %, and demonstrated excellent resistance to efficiency roll-off at higher luminance. Interestingly, the operational lifetime up to 95 % of the initial luminance (LT95) of the SFAF devices measured at 1000 cd/m2 brightness was more than double compared to that of the reference device fabricated using BCFN as HTL, which has a structure similar to the SFAF without the spiro group. The study suggests that the spiro-bifluorene-based HTLs can be excellent candidates for developing blue phosphorescent OLEDs with higher efficiency and longer operational lifetime.
{"title":"Blue phosphorescent organic light-emitting diodes with extended operational lifetime through hole transport layer management","authors":"KangMun Lee , Jong-Kwan Bin","doi":"10.1016/j.orgel.2025.107263","DOIUrl":"10.1016/j.orgel.2025.107263","url":null,"abstract":"<div><div>Achieving higher efficiency and a longer operational lifetime is equally important yet remains a daunting task in the domain of blue phosphorescent organic light-emitting diodes (PhOLEDs). Optimizing an appropriate hole transport layer (HTL) has proven to be a potential approach for improving the performance of blue PhOLED. In the present work, we investigated a spiro-bifluorene-based <strong>SFAF</strong> HTL to develop blue PhOLEDs with high efficiency and extended operational lifetime. The spiro-bifluorene unit imparts enhanced thermal stability to the <strong>SFAF</strong> molecular structure. Further, careful management of the thickness of <strong>SFAF</strong> HTL fosters a charge balance in the emitting layer and subsequently strengthens the performance of the fabricated devices. The fabricated devices emit in the blue region, achieving an EQE<sub>max</sub> nearing 20 %, and demonstrated excellent resistance to efficiency roll-off at higher luminance. Interestingly, the operational lifetime up to 95 % of the initial luminance (LT<sub>95</sub>) of the <strong>SFAF</strong> devices measured at 1000 cd/m<sup>2</sup> brightness was more than double compared to that of the reference device fabricated using <strong>BCFN</strong> as HTL, which has a structure similar to the <strong>SFAF</strong> without the spiro group. The study suggests that the spiro-bifluorene-based HTLs can be excellent candidates for developing blue phosphorescent OLEDs with higher efficiency and longer operational lifetime.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107263"},"PeriodicalIF":2.7,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143946622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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