Organic Electronics最新文献_第3页

Dual-oxide WO3-Based ETLs for enhanced charge transport and stability in CsPbIBr2 perovskite solar cells 基于wo3的双氧化物ETLs增强CsPbIBr2钙钛矿太阳能电池的电荷输运和稳定性

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-30 DOI: 10.1016/j.orgel.2025.107354

Ali Mujtaba , M.I. Khan , Mongi Amami , Badriah S. Almutairi , Shahbaz Ahmed Khan

This study is significant for introducing WO₃-based composite ETLs (ZrO₂-WO₃ and SnO₂-WO₃) that synergistically enhance charge transport, reduce recombination, and improve stability in CsPbIBr₂ perovskite solar cells. The novelty lies in the dual-oxide approach, which leverages the complementary structural and electronic properties of WO₃ with ZrO₂ and SnO₂ to achieve higher device efficiency. X-ray diffraction (XRD) analysis confirmed the successful integration of WO₃-based films, with calculated crystallite sizes of 36.5 nm for ZrO₂-WO₃ and 41.8 nm for SnO₂-WO₃, indicating improved crystallinity for the SnO₂-based film. Scanning electron microscope (SEM) showed that SnO₂-WO₃ film exhibits a smoother, more uniform morphology with smaller grain sizes compared to the ZrO₂-WO₃ film. Raman spectroscopy validated the phase purity and chemical stability of the prepared films. SEM morphology showed the reduced average grain size for SnO₂-WO₃ film. UV–Vis (UV–vis) spectroscopy revealed reduced band gaps of 2.71 eV and 2.69 eV for ZrO₂-WO₃ and SnO₂-WO₃, respectively, favoring efficient charge transport. Photoluminescence (PL) measurements demonstrated enhanced charge carrier separation. Current-density voltage (J-V) characteristics showed a higher power conversion efficiency of 9.35 % for SnO₂-WO₃ compared to 8.26 % for ZrO₂-WO₃. Electrochemical impedance spectroscopy (EIS) revealed reduced charge transfer resistance and increased recombination resistance (1769 Ω) for SnO₂-WO₃-based devices. These findings highlight the potential of WO₃-based ETLs in PSCs for future high-efficiency photovoltaic applications.

该研究对于引入基于wo3的复合etl （ZrO2-WO3和SnO2-WO3）具有重要意义，它们可以协同增强CsPbIBr2钙钛矿太阳能电池中的电荷输运，减少重组，提高稳定性。新颖之处在于双氧化物方法，它利用WO3与ZrO2和SnO2互补的结构和电子特性来实现更高的器件效率。x射线衍射（XRD）分析证实了wo3基薄膜的成功集成，计算出ZrO2-WO3的晶粒尺寸为36.5 nm， SnO2-WO3的晶粒尺寸为41.8 nm，表明sno2基薄膜的结晶度得到了提高。扫描电镜（SEM）结果表明，与ZrO2-WO3膜相比，SnO2-WO3膜形貌更光滑、均匀，晶粒尺寸更小。拉曼光谱验证了所制备薄膜的相纯度和化学稳定性。SEM形貌显示SnO2-WO3薄膜的平均晶粒尺寸减小。紫外可见光谱显示，ZrO2-WO3和SnO2-WO3的带隙分别减小了2.71 eV和2.69 eV，有利于有效的电荷输运。光致发光（PL）测量表明，电荷载流子分离增强。电流密度电压（J-V）特性表明，SnO2-WO3的功率转换效率为9.35%，而ZrO2-WO3的功率转换效率为8.26%。电化学阻抗谱（EIS）显示，sno2 - wo3基器件的电荷转移电阻降低，复合电阻增加（1769 Ω）。这些发现突出了基于wo3的etl在psc中未来高效光伏应用的潜力。

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引用次数: 0

Solution-processable pyridine-flanked DPP copolymers for n-type organic field-effect transistors 用于n型有机场效应晶体管的可溶液加工吡啶侧链DPP共聚物

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-29 DOI: 10.1016/j.orgel.2025.107353

Yejin Ahn , Dong Uk Lee , Yu Rim Kang , Hyojin Kye , Bong-Gi Kim , YeongKwon Kang

Organic field-effect transistors (OFETs) have been extensively studied, yet achieving reproducible n-type transport remains a persistent challenge. Here, we report two pyridine-flanked diketopyrrolopyrrole (DPP) copolymers, 5-PDppPy-S and 5-PDppPy-Se, designed to probe the influence of chalcogen substitution on electron transport. Both polymers exhibit good solubility in common organic solvents and high thermal stability with 5 % weight loss above 390 °C. Thin-film devices with a bottom-gate, top-contact architecture showed clear n-channel operation, with electron mobilities of 1.0 × 10⁻³ cm² V⁻¹ s⁻¹ for 5-PDppPy-S and 1.7 × 10⁻³ cm² V⁻¹ s⁻¹ for 5-PDppPy-Se. A brief thermal annealing step at 200 °C for 10 min further improved charge transport, yielding mobilities of 1.7 × 10⁻³ and 3.1 × 10⁻³ cm² V⁻¹ s⁻¹, respectively. Atomic force microscopy (AFM) revealed increased surface roughness and domain growth upon annealing, consistent with enhanced molecular ordering. These findings establish a direct comparison of sulfur and selenium substitution in pyridine-flanked DPP polymers and highlight the role of simple post-processing in achieving stable n-type transport, offering insights for the molecular design of solution-processable OFET materials.

有机场效应晶体管（ofet）已经得到了广泛的研究，但实现可重复的n型输运仍然是一个持续的挑战。在这里，我们报道了两个吡啶侧双酮吡咯（DPP）共聚物，5-PDppPy-S和5-PDppPy-Se，旨在探讨碳取代对电子传递的影响。这两种聚合物在普通有机溶剂中具有良好的溶解性和高的热稳定性，在390°C以上失重5%。具有底栅顶接触结构的薄膜器件显示出清晰的n通道运行，5-PDppPy-S的电子迁移率为1.0 × 10−3 cm2 V−1 s−1,5-PDppPy-Se的电子迁移率为1.7 × 10−3 cm2 V−1 s−1。在200°C下进行10分钟的短暂热退火步骤进一步改善了电荷输运，迁移率分别为1.7 × 10−3和3.1 × 10−3 cm2 V−1 s−1。原子力显微镜（AFM）显示退火后表面粗糙度和区域生长增加，与增强的分子有序一致。这些发现建立了硫取代和硒取代在吡啶侧链DPP聚合物中的直接比较，并强调了简单后处理在实现稳定n型传输中的作用，为溶液可加工OFET材料的分子设计提供了见解。

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引用次数: 0

Improving performance of quantum dot light-emitting diodes through PMA-doped PEDOT:PSS hole injection layer pma掺杂PEDOT:PSS空穴注入层改善量子点发光二极管性能

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-25 DOI: 10.1016/j.orgel.2025.107350

Eunyong Seo , Jeong Ha Hwang , Sinhui Min , Juwan Lee , Heeeun Kang , Seog Geun Kang , Donggu Lee

Colloidal quantum dot-based light-emitting diodes (QLEDs) have attracted significant attention owing to their facile solution processability and excellent optical properties, making them promising candidates for developing next-generation display technologies. However, their practical application remains limited due to inefficient hole injection, which remains a significant challenge in achieving high stability and commercial viability for solution-processed QLEDs. This work introduces a hybrid hole injection layer (HIL) to realize efficient solution-processed QLEDs. The designed HIL consists of a conductive polymer poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), doped with inorganic additive phosphomolybdic acid. In this design, the anode-HIL interface, engineered by the hybrid HIL, enhanced the hole injections, leading to improved device performance. The optimized hybrid-HIL-based QLEDs displayed a maximum external quantum efficiency of 9.84 % and a power efficiency of 11.55 lm/W, exhibiting a significant improvement compared to conventional PEDOT:PSS-based devices. These results confirmed that the solution-processable hybrid HIL provides a promising alternative for realizing high-performance, solution-processed QLEDs.

胶体量子点发光二极管（qled）由于其易于溶液处理和优异的光学性能而引起了人们的广泛关注，使其成为开发下一代显示技术的有希望的候选者。然而，由于低效的孔注入，它们的实际应用仍然受到限制，这对于实现溶液处理qled的高稳定性和商业可行性仍然是一个重大挑战。本文介绍了一种混合空穴注入层（HIL）来实现高效的溶液处理qled。所设计的HIL由导电聚合物聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS），掺杂无机添加剂磷酸钼酸组成。在该设计中，采用混合HIL设计的阳极-HIL界面增强了井眼注入，从而提高了设备性能。与传统的PEDOT: pss器件相比，优化后的基于混合hil的qled的最大外量子效率为9.84%，功率效率为11.55 lm/W。这些结果证实，溶液可加工的混合HIL为实现高性能、溶液处理的qled提供了一个有前途的替代方案。

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引用次数: 0

Highly efficient white organic light-emitting diodes with low efficiency roll-off based on novel exciplex host 基于新型激复体的低滚降高效白光有机发光二极管

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-22 DOI: 10.1016/j.orgel.2025.107352

Fankang Kong , Qingxiang Wang , Yongan Zhang , Jun Sun , Jintao Wang , Liping Yang , Ren Sheng , Ping Chen

The exciplex-host system represents an effective strategy for achieving efficient white organic light-emitting diodes (WOLEDs). Herein, a novel exciplex system constructed by 26DCzPPy and SFTRZ is demonstrated to fabricate efficient WOLEDs. As a result, the blue and orange devices show maximum external quantum efficiency (EQE) of 19.3 % and 25.3 %. By further regulating charge transport behavior in the emission layer, the optimizing white OLED (WOLED) achieves the highest power efficiency of 58.3 lm/W and a low CE roll-off of 8.6 %. This superior performance can be attributed to efficient Förster resonance energy transfer from host to guest and balanced charge transport in the device. This result provides an effective approach for achieving simple, high-performance OLEDs for solid-state lighting.

该系统是实现高效白光有机发光二极管（WOLEDs）的有效策略。本文证明了一种由26DCzPPy和SFTRZ构成的新型杂合体系可以制造高效的WOLEDs。结果显示，蓝色和橙色器件的最大外部量子效率（EQE）分别为19.3%和25.3%。通过进一步调节发射层中的电荷输运行为，优化后的白色OLED （WOLED）实现了58.3 lm/W的最高功率效率和8.6%的低CE滚降。这种优异的性能可归因于有效的Förster共振能量从主客体转移和平衡电荷在器件中的传输。这一结果为实现用于固态照明的简单、高性能oled提供了有效的方法。

引用次数: 0

Coordination-based doping of MEH-PPV with La(TFSI)3 enables air-free conductivity and stable performance in perovskite solar cells La(TFSI)3配位掺杂MEH-PPV使钙钛矿太阳能电池具有无空气导电性和稳定的性能

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-21 DOI: 10.1016/j.orgel.2025.107351

Seth W. McPherson , Yeh-Chuan Chou , Insoo Shin , Stephen A. Maclean , Dmytro Nykypanchuk , Tai-de Li , Chieh-Ting Lin , Jaemin Kong , Jason A. Röhr , André D. Taylor

Achieving high electrical conductivity in conjugated polymers without negatively impacting morphology and stability remains a central challenge in the development of organic optoelectronic devices. Here, we demonstrate that doping MEH-PPV with lanthanum bistriflimide [La(TFSI)₃] results in a conductivity enhancement exceeding six orders of magnitude under fully inert conditions. Unlike monovalent dopants such as LiTFSI, which require environmental activation and lead to morphological defects, La(TFSI)₃ enables oxygen-independent conductivity by forming multidentate coordination complexes with polymer sidechains. Spectroscopic analyses (FTIR, Raman, PL) indicate that La³⁺ induces crosslinking and suppresses emissive disorder, promoting interchain charge hopping even without generating polarons. Morphological studies show that La³⁺ doping eliminates pinholes and produces structurally cohesive films, in contrast to the inhomogeneous and unstable films produced with LiTFSI. When used as a hole transport layer in perovskite solar cells, La(TFSI)₃ doped MEH-PPV increases the power conversion efficiency from 13.05 % to 18.50 % and enables devices that retain 100 % of their efficiency after 1000 h of inert storage. These results highlight a coordination-driven, air-free doping strategy for enabling durable, high-performance organic electronics.

在共轭聚合物中实现高导电性而不影响其形态和稳定性仍然是有机光电器件发展的核心挑战。在这里，我们证明了在完全惰性条件下，双氟化镧[La(TFSI)3]掺杂MEH-PPV导致电导率提高超过6个数量级。与需要环境激活并导致形态缺陷的一价掺杂剂（如LiTFSI）不同，La(TFSI)3通过与聚合物侧链形成多齿配位配合物来实现不依赖氧的导电性。光谱分析（FTIR, Raman， PL）表明La3+诱导交联并抑制发射无序，即使不产生极化子也能促进链间电荷跳变。形态学研究表明，La3+掺杂消除了针孔，形成了结构上有凝聚力的薄膜，而LiTFSI则形成了不均匀和不稳定的薄膜。当在钙钛矿太阳能电池中用作空穴传输层时，La(TFSI)3掺杂MEH-PPV将功率转换效率从13.05%提高到18.50%，并使器件在惰性存储1000小时后保持100%的效率。这些结果突出了协调驱动的无空气掺杂策略，以实现耐用，高性能的有机电子产品。

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引用次数: 0

Impedance spectroscopy analysis of interfacial charges in aged thermally activated delayed fluorescent OLED 老化热激活延迟荧光OLED界面电荷的阻抗谱分析

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-19 DOI: 10.1016/j.orgel.2025.107349

Jae-Yong Park , Younguk Choi , Akeem Raji , So-Young Boo , Seonghwan An , Si-Eun Park , Woon-Ha Lee , Dong-Jun Kim , Hae-Won Lee , Wooik Jung , Jonghee Lee , Jae-Hyun Lee

In this study, the charge injection and accumulation characteristics of thermally activated delayed fluorescent (TADF) organic light-emitting diodes (OLEDs) comprising a 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyanobenzene (4Cz-IPN) emitter were measured before and after device degradation. To investigate the degradation-induced spontaneous orientation polarization (SOP) characteristics of the OLED, the charge carrier dynamics and operational stability of pristine and aged devices were compared using impedance spectroscopy (IS). Capacitance–voltage (C-V) and capacitance–frequency (C-F) analyses revealed the presence of negative interfacial charges induced by the spontaneous alignment of the TADF-emitting and electron-transport layers. Equivalent resistance–capacitance (R-C) circuit simulations quantitatively reproduced the experimental C-F curve and determined the relaxation frequency, confirming that aged devices have a higher resistance and reduced interfacial charges. The changes in charge accumulation at the interfaces and their associated electrical characteristics were evaluated to understand their impact on the lifetime and operational stability of the device. A significant decrease in the luminous efficiency was observed in the aged devices, which was attributed to reduced charge injection and transport into the emitting layer.

在本研究中，测量了由1,2,3,5-四akis(carbazol-9-yl)-4,6- diyanobbenzene （4Cz-IPN）发射器组成的热激活延迟荧光（TADF）有机发光二极管（oled）在器件降解前后的电荷注入和积累特性。为了研究降解诱导的自发取向极化（SOP）特性，利用阻抗谱（IS）比较了原始和老化器件的载流子动力学和运行稳定性。电容电压（C-V）和电容频率（C-F）分析表明，由于tadf发射层和电子传输层的自发排列，存在负的界面电荷。等效电阻-电容（R-C）电路模拟定量再现了实验C-F曲线，并确定了弛豫频率，证实老化器件具有更高的电阻和更少的界面电荷。评估了界面电荷积累的变化及其相关的电气特性，以了解它们对设备寿命和运行稳定性的影响。老化器件的发光效率明显下降，这是由于发射层的电荷注入和输运减少所致。

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引用次数: 0

Biocompatible bovine serum albumin dielectric layers for high-performance and neuromorphic n-type organic field-effect transistors 用于高性能神经形态n型有机场效应晶体管的生物相容性牛血清白蛋白介电层

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-07 DOI: 10.1016/j.orgel.2025.107343

Po-Hsiang Fang , Guan-Xu Chen , Yu-Tong Wu , Shuying Wang , Shan-Jui Hsu , Horng-Long Cheng , Wei-Yang Chou

In this study, we systematically explore the role of bovine serum albumin (BSA) as a biocompatible interfacial modification layer in n-type organic field-effect transistors (OFETs) based on N, N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C₁₃). By varying BSA concentrations from 4.5 to 100 mg/ml, we demonstrate its significant influence on dielectric thickness, surface energy, and interface trap density. An optimal concentration of 9.0 mg/ml yields a favorable balance between surface smoothness and gate dielectric coupling, resulting in enhanced molecular ordering, reduced subthreshold swing (0.09 V/dec), and improved carrier mobility (0.7 cm²/V·s). Photoluminescence, Raman, and X-ray diffraction analyses confirm that BSA promotes π–π stacking and crystallographic alignment conducive to efficient charge transport. Furthermore, synaptic functionalities are realized in devices incorporating 4.5 and 9.0 mg/ml BSA layers, as evidenced by pronounced excitatory postsynaptic current (EPSC) responses. These findings highlight the potential of BSA as a multifunctional dielectric material for high-performance and neuromorphic organic electronic applications.

在这项研究中，我们系统地探索了牛血清白蛋白（BSA）作为生物相容性界面修饰层在基于N， N ' -二癸二烯-3,4,9,10-四羧基二亚胺（PTCDI-C13）的N型有机场效应晶体管（ofet）中的作用。通过改变BSA浓度从4.5到100 mg/ml，我们证明了它对介电厚度、表面能和界面陷阱密度的显著影响。最佳浓度为9.0 mg/ml时，表面平滑度和栅极介电耦合之间达到了良好的平衡，从而增强了分子有序度，降低了亚阈值摆动（0.09 V/dec），提高了载流子迁移率（0.7 cm2/V·s）。光致发光、拉曼和x射线衍射分析证实，BSA促进π -π堆叠和有利于有效电荷传输的晶体排列。此外，在含有4.5和9.0 mg/ml BSA层的设备中实现了突触功能，如明显的兴奋性突触后电流（EPSC）反应所证明的那样。这些发现突出了BSA作为高性能和神经形态有机电子应用的多功能介电材料的潜力。

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引用次数: 0

Interfacial defect mitigation in bilayer organic photovoltaics via low-temperature annealing for enhanced indoor light performance 通过低温退火降低双层有机光伏电池的界面缺陷以增强室内光性能

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-09-29 DOI: 10.1016/j.orgel.2025.107342

Dogyeong Kim , Jinwook Jung , Yoohan Ma , Gyuwan Hwang , Jae-Seung Roh , Jongbok Kim , Dongwook Ko

Organic photovoltaics (OPVs) are promising for indoor energy harvesting due to their lightweight, and tunable absorption. However, bulk heterojunction (BHJ) structures suffer from severe recombination losses under low-intensity illumination, limiting device efficiency. In contrast, planar bilayer OPVs mitigate these losses by providing well-defined donor–acceptor interfaces and direct charge transport pathways. Here, bilayer OPVs were fabricated using a water-assisted lamination method, enabling the transfer of the donor polymer PTB7 onto a PC71BM acceptor layer without intermixing. To mitigate interfacial trap states caused by oxygen adsorption, we applied low-temperature annealing at 40 °C. Bilayer OPVs annealed for 1 min achieved the highest power conversion efficiency of 2.36 % under 1000 lux compact fluorescent lamp (CFL) illumination. Angle-resolved X-ray photoelectron spectroscopy confirmed the removal of surface-bound oxygen, while photoluminescence and contact angle measurements revealed suppressed trap states and preserved π–conjugation. Optical absorption and XPS depth-profile analyses further verified that the bilayer morphology remained intact without donor–acceptor interdiffusion. In addition, light-intensity-dependent open-circuit voltage analysis indicated reduced trap-assisted recombination in optimally annealed devices. These findings demonstrate that low-temperature annealing is an effective strategy to enhance the efficiency of bilayer OPVs by eliminating interfacial adsorbed traps while maintaining structural stability under indoor illumination.

有机光伏（opv）由于其重量轻，吸收可调，在室内能量收集方面很有前景。然而，体异质结（BHJ）结构在低强度光照下存在严重的复合损耗，限制了器件效率。相比之下，平面双层opv通过提供明确的供体-受体界面和直接电荷传输途径来减轻这些损失。在这里，使用水辅助层压方法制备了双层opv，使供体聚合物PTB7在不混合的情况下转移到PC71BM受体层上。为了减轻氧吸附引起的界面陷阱状态，我们在40°C下进行了低温退火。在1000勒克斯紧凑型荧光灯（CFL）照明下，退火1 min的双层opv的功率转换效率最高，达到2.36%。角分辨x射线光电子能谱证实了表面结合氧的去除，而光致发光和接触角测量显示了抑制的陷阱态和保留的π共轭。光学吸收和XPS深度剖面分析进一步证实，在没有供体-受体相互扩散的情况下，双分子层形态保持完整。此外，光强度相关的开路电压分析表明，在最佳退火器件中减少了陷阱辅助重组。这些发现表明，低温退火是一种有效的策略，可以通过消除界面吸附陷阱来提高双层opv的效率，同时在室内照明下保持结构稳定性。

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引用次数: 0

Interface-Engineered polymer nanocomposite RRAM with enhanced switching reliability and performance 具有增强开关可靠性和性能的界面工程聚合物纳米复合RRAM

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-09-19 DOI: 10.1016/j.orgel.2025.107340

Yu-Kyung Kim , Min-Guen Kim , Jea-Young Choi

In this study, non-volatile resistive random access memory (RRAM) devices were fabricated using polymer nanocomposites (NCs) consisting of polyvinyl alcohol (PVA) and copper oxide (CuO) nanoparticles (NPs). The fabricated ITO/CuO:PVA/Al devices demonstrated bipolar resistive switching (RS) behavior, primarily driven by the charge trapping/de-trapping dynamics associated with the CuO NPs. However, excessive defect densities within the NC layer limited device reliability and switching performance. To address this issue, a hydroquinone-modified PEDOT:PSS (HQ-PEDOT:PSS) interfacial buffer layer was introduced to enhance interfacial properties. Electrical impedance spectroscopy (EIS) analysis confirmed that HQ-PEDOT:PSS effectively suppressed trap-assisted charge recombination and improved charge transfer efficiency at the interface. As a result, HQ-PEDOT:PSS-incorporated devices (HQ-NC-RRAM) demonstrated a significantly enhanced ON/OFF ratio of ∼10⁴ and a remarkably low data dispersion variance (VDD ≈ 0.01) during endurance measurements. Compared to devices with conventional pristine-PEDOT:PSS or no buffer layer, the HQ-NC-RRAM demonstrated notably improved switching performance and device reliability. These findings highlight the effectiveness of HQ-PEDOT:PSS in interface engineering for high-performance NC-RRAMs.

在本研究中，采用聚乙烯醇（PVA）和氧化铜（CuO）纳米粒子（NPs）组成的聚合物纳米复合材料（nc）制备了非易失性电阻随机存取存储器（RRAM）器件。制备的ITO/CuO:PVA/Al器件表现出双极电阻开关（RS）行为，主要由与CuO NPs相关的电荷捕获/解捕获动力学驱动。然而，NC层中过多的缺陷密度限制了器件的可靠性和开关性能。为了解决这一问题，引入对苯二酚修饰的PEDOT:PSS （HQ-PEDOT:PSS）界面缓冲层来提高界面性能。电阻抗谱（EIS）分析证实，HQ-PEDOT:PSS有效抑制了陷阱辅助的电荷复合，提高了界面处的电荷转移效率。结果，HQ-PEDOT: pss集成器件（HQ-NC-RRAM）在耐力测量期间显示出显着增强的开/关比（~ 104）和非常低的数据色散方差（VDD≈0.01）。与传统的原始- pedot:PSS或无缓冲层的器件相比，HQ-NC-RRAM显示出显着改善的开关性能和器件可靠性。这些发现突出了HQ-PEDOT:PSS在高性能nc - rram接口工程中的有效性。

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引用次数: 0

Solution-processed NiO tailoring hole injection and enhancing photoluminescence in light-emitting diodes 溶液处理NiO裁剪孔注入和增强发光二极管的光致发光

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-09-18 DOI: 10.1016/j.orgel.2025.107341

Lingyu Huo , Muci Li , Hao Sun , Xiaocui Wang , Bingyu Wang , Xiaowen Zhang

Solution-processed NiO mediating light-emitting diodes (LEDs) performance have been demonstrated. Using NiO-doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) tailoring hole injection, fantastic UV organic LEDs with maximum external quantum efficiency of 4.24 %, radiance of 3.9 mW/cm², and 375 nm short-wavelength emission are demonstrated. Using hybrid NiO-quantum dots/carbon dots dispersed in poly(methyl methacrylate) as composite fluorescence film, the 365-nm (and 395-nm) excited photoluminescent LEDs show high luminance of 22014 (and 23937) cd/m² at 100 mA (and 110 mA), power efficiency of 13.86 (and 13.00) lm/W, and yellow-green emission with spectra peak of about 555 nm and wide full width at half maximum of about 140 nm. Atomic force microscope, transmission electron microscope, X-ray/ultraviolet photoelectron spectroscopy, current-voltage, photoluminescence, impedance spectroscopy, and conductivity measurements confirm that NiO-doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) promotes hole injection in organic LEDs, NiO incorporation enhances photoluminescence of carbon dots, and accordingly contributing to superior device performance. Our experiments provide alternative methods for constructing fascinating LEDs and boosting NiO applications.

溶液处理NiO介质发光二极管（led）的性能已被证明。利用掺杂nio的聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐裁剪空穴注入，制备出了外量子效率最高4.24%、发光强度为3.9 mW/cm2、短波长为375 nm的紫外有机发光二极管。采用分散在聚甲基丙烯酸甲酯中的混合nio量子点/碳点作为复合荧光膜，365 nm（和395 nm）激发的光致发光led在100 mA（和110 mA）时的亮度分别为22014（和23937）cd/m2，功率效率分别为13.86（和13.00）lm/W，光谱峰约为555nm，半峰宽约为140 nm的黄绿色发光。原子力显微镜、透射电子显微镜、x射线/紫外光电子能谱、电流电压、光致发光、阻抗谱和电导率测量证实，NiO掺杂聚（3,4-乙烯二氧噻吩）：聚（苯乙烯磺酸盐）促进了有机led的空穴注入，NiO的掺入增强了碳点的光致发光，从而提高了器件的性能。我们的实验为构建迷人的led和促进NiO应用提供了替代方法。

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引用次数: 0