Pub Date : 2006-06-27DOI: 10.1109/HDP.2006.1707574
Kun Zhao, Lei Jia, Ji’an Duan, J. Zhanga
The effects of thermosonic bonding parameters on GaN-based light emitting diodes (LEDs) with flip chip structure were investigated. Experiments with different thermosonic bonding parameters were conducted to optimize the flip chip process during production flow. These thermosonic bonding parameters on LEDs involved different bonding temperatures, different bonding force, and different ultrasonic power. This paper represents these parameters' effects on flip chip bonding strength by thermosonic gold ball bonding
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Pub Date : 2006-06-27DOI: 10.1109/HDP.2006.1707582
Shaofang Gong, A. Backstrom, M. Agesjo, A. Serban, M. Karlsson
A radio frequency (RF) front-end module at 5 GHz has been designed and implemented in a conventional printed circuit board (PCB). The module consists of two switches, two bandpass filters, a balun, a low noise amplifier and a power amplifier. Distributed components and sub-circuits based upon the transmission line theory have been utilized for the module design. All the sub-circuits and the entire module have been evaluated by both simulation and measurements. It is shown that RF modules at 5 GHz can be integrated in a PCB utilizing a conventional PCB process. This module integration technique provides not only low cost but also high performance because of the elimination of parasitics associated with lumped components in a conventional design
{"title":"Integration of a 5-GHz radio front-end in PCB","authors":"Shaofang Gong, A. Backstrom, M. Agesjo, A. Serban, M. Karlsson","doi":"10.1109/HDP.2006.1707582","DOIUrl":"https://doi.org/10.1109/HDP.2006.1707582","url":null,"abstract":"A radio frequency (RF) front-end module at 5 GHz has been designed and implemented in a conventional printed circuit board (PCB). The module consists of two switches, two bandpass filters, a balun, a low noise amplifier and a power amplifier. Distributed components and sub-circuits based upon the transmission line theory have been utilized for the module design. All the sub-circuits and the entire module have been evaluated by both simulation and measurements. It is shown that RF modules at 5 GHz can be integrated in a PCB utilizing a conventional PCB process. This module integration technique provides not only low cost but also high performance because of the elimination of parasitics associated with lumped components in a conventional design","PeriodicalId":406794,"journal":{"name":"Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129416188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-27DOI: 10.1109/HDP.2006.1707559
Wang Xi-chuan, Si Cuiying, Xu Xing
The typical current mode bandgap voltage circuit is built up by two currents, one is proportional to VBE across the base-emitter of the parasitic BJT in CMOS process, the other is proportional to VT. The negative temperature coefficient of the former term compensates the positive temperature coefficient of the latter. But the temperature dependence of VBE is not linear and therefore doesn't completely cancel the linear temperature dependence of DeltaVBE, which is proportional to absolute temperature (PTAT). A curvature-compensated bandgap reference (BGR) with 1.8-V supply voltage is presented, which utilizes the different temperature-dependent emitter of the BJT to obtain the nonlinear current INL to cancel the nonlinear term of IVBE. The simulation results indicate the temperature coefficient (TC) of 8ppm/ degC from -40 degC to 80 degC and a higher power supply rejection ration (PSRR) using 0.18mum CMOS process. A scaled-down bandgap reference voltage can also be obtained by setting the resistor and current mirror in the proposed BGR circuit
典型的电流模式带隙电压电路由两个电流组成，一个与CMOS工艺中寄生BJT基极-发射器上的VBE成正比，另一个与VT成正比，前者的负温度系数补偿后者的正温度系数。但VBE的温度依赖性不是线性的，因此不能完全抵消与绝对温度(PTAT)成正比的DeltaVBE的线性温度依赖性。提出了一种电压为1.8 v的曲率补偿型带隙基准，该带隙基准利用不同温度相关的发射极来获得非线性电流INL，以抵消IVBE的非线性项。仿真结果表明，在-40 ~ 80℃范围内，温度系数(TC)为8ppm/℃，采用0.18 μ m CMOS工艺，电源抑制比(PSRR)较高。通过在BGR电路中设置电阻和电流反射镜，也可以获得按比例缩小的带隙参考电压
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