Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558823
V. Obreja, E. Manea, C. Codreanu, M. Avram, C. Podaru
Unreliable performance of thyristor devices at junction temperature higher than 125-150degC, cannot be understood if non-negligible leakage current flow at the junction edge is not taken into consideration. Current-voltage blocking (off-state) characteristics have been investigated for medium power thyristor devices available on the market. Typical results are shown at room and high temperature. A split of the two blocking characteristics is attributed to the edge junction leakage current component. Leakage current voltage dependence like Vln/ where n varies in the range 1-5 is possible. At high temperature, no saturation tendency of the blocking leakage current is observed. Such results are not understandable by considering only the bulk component of the junction current
{"title":"The junction edge leakage current and the blocking I-V characteristics of commercial glass passivated thyristor devices","authors":"V. Obreja, E. Manea, C. Codreanu, M. Avram, C. Podaru","doi":"10.1109/SMICND.2005.1558823","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558823","url":null,"abstract":"Unreliable performance of thyristor devices at junction temperature higher than 125-150degC, cannot be understood if non-negligible leakage current flow at the junction edge is not taken into consideration. Current-voltage blocking (off-state) characteristics have been investigated for medium power thyristor devices available on the market. Typical results are shown at room and high temperature. A split of the two blocking characteristics is attributed to the edge junction leakage current component. Leakage current voltage dependence like Vln/ where n varies in the range 1-5 is possible. At high temperature, no saturation tendency of the blocking leakage current is observed. Such results are not understandable by considering only the bulk component of the junction current","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86174566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558789
M. Brezeanu, S. J. Rashid, T. Butler, N. Rupesinghe, F. Udrea, A. Garraway, L. Coubeck, P. Taylor, G. Amaratunga, D. Twitchen, A. Tajani, M. Dixon
Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported
{"title":"Highly efficient edge terminations for diamond schottky diodes","authors":"M. Brezeanu, S. J. Rashid, T. Butler, N. Rupesinghe, F. Udrea, A. Garraway, L. Coubeck, P. Taylor, G. Amaratunga, D. Twitchen, A. Tajani, M. Dixon","doi":"10.1109/SMICND.2005.1558789","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558789","url":null,"abstract":"Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90058838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558748
S. Shishiyanu, T. Shishiyanu, O. Lupan
Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and rapid photothermal processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence, sensing properties and operating temperature of impurity doped zinc oxide thin films. The highest sensitivity to 1.5 ppm NO/sub 2/ was obtained for 5 - 10 at.% Sn concentration in the solution of ions and RPP temperature of 550-650/spl deg/C.
{"title":"Microtechnology with SILAR and RPP for semiconductor oxide gas sensors","authors":"S. Shishiyanu, T. Shishiyanu, O. Lupan","doi":"10.1109/SMICND.2005.1558748","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558748","url":null,"abstract":"Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and rapid photothermal processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence, sensing properties and operating temperature of impurity doped zinc oxide thin films. The highest sensitivity to 1.5 ppm NO/sub 2/ was obtained for 5 - 10 at.% Sn concentration in the solution of ions and RPP temperature of 550-650/spl deg/C.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90242234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558812
A. Muller, D. Neculoiu, C. Brezeanu
The paper describes a new approach for the design of lumped components supported on high resistivity silicon substrates as well as on thin dielectric membranes obtained by silicon micromachining. The method employs intensive electromagnetic modeling and layout optimization. The influence of various geometrical parameters (number of coils, width of the line, thickness of the metallization, etc) is analyzed. The quality factor for micromachined inductors is compared with those obtained for the bulk silicon supported structures and a significant increase of this parameter is observed for the membrane supported structures. The simulation were used in the design modeling and manufacturing of micromachined L-C type filter structures in the 1-10 GHz frequency band
{"title":"Membrane supported spiral inductors for up to 10 GHz filter applications","authors":"A. Muller, D. Neculoiu, C. Brezeanu","doi":"10.1109/SMICND.2005.1558812","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558812","url":null,"abstract":"The paper describes a new approach for the design of lumped components supported on high resistivity silicon substrates as well as on thin dielectric membranes obtained by silicon micromachining. The method employs intensive electromagnetic modeling and layout optimization. The influence of various geometrical parameters (number of coils, width of the line, thickness of the metallization, etc) is analyzed. The quality factor for micromachined inductors is compared with those obtained for the bulk silicon supported structures and a significant increase of this parameter is observed for the membrane supported structures. The simulation were used in the design modeling and manufacturing of micromachined L-C type filter structures in the 1-10 GHz frequency band","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75722865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558780
F. Tay, C. Iliescu, H. Chua
This paper presents a new fabrication process for nanotips array using notching effect of reflected charges on mask (NECROM). The new fabrication process is based on two phenomenons: flowing of an AZ9260 thick photoresist mask when is baked at 120degC and the notching effect of the reflected charges from the photoresist mask in a plasma etching process. The heating of the photoresist at different temperature and time, different profile of the masking layer walls can be achieved. During the plasma etching process, the charges (ions and radicals) are reflected by the oblique profile of the masking layer walls and generate an undercut. This phenomenon was associated with an isotropic etching process in a deep RIE system to produce tips. Due to the isotropy of the process, the lips are generated. The results indicate that the radiuses of the tips are in the range of 40 to 60 nm
{"title":"Fabrication nanotips array for thermoelectric coolers using NERCOM process","authors":"F. Tay, C. Iliescu, H. Chua","doi":"10.1109/SMICND.2005.1558780","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558780","url":null,"abstract":"This paper presents a new fabrication process for nanotips array using notching effect of reflected charges on mask (NECROM). The new fabrication process is based on two phenomenons: flowing of an AZ9260 thick photoresist mask when is baked at 120degC and the notching effect of the reflected charges from the photoresist mask in a plasma etching process. The heating of the photoresist at different temperature and time, different profile of the masking layer walls can be achieved. During the plasma etching process, the charges (ions and radicals) are reflected by the oblique profile of the masking layer walls and generate an undercut. This phenomenon was associated with an isotropic etching process in a deep RIE system to produce tips. Due to the isotropy of the process, the lips are generated. The results indicate that the radiuses of the tips are in the range of 40 to 60 nm","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83050911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558735
E. Manea, E. Budianu, M. Purica, C. Podaru, I. Cernica, A. Coraci, F. Baharada
This paper presents a new silicon solar cell structure obtained by the front surface texturisation using silicon micromachining technologies. A 'honeycomb' textured front surface has been obtained using a photolitographic process to generate patterns (disc holes) on the top surface followed by isotropic etching in HNO/sub 3/ : HF : CH3COOH up to join together of the wells. For the front surface losses characterization, the spectral dependence reflection has been investigated by spectrophotometric measurements. The surface reflectivity was lowered at 5% (30% in the case of untextured monocrystalline surface). The p-n junction made by phosphorus diffusion at /spl sim/0.8 /spl mu/m follows the honeycomb profile. In order to ensure low series resistances a p+ bor diffusion on the back of the structure was made. The fabrication process was completed with an ohmic contacts (Al: on top and on the back surface).
{"title":"Silicon solar cells technology using honeycomb textured front surface","authors":"E. Manea, E. Budianu, M. Purica, C. Podaru, I. Cernica, A. Coraci, F. Baharada","doi":"10.1109/SMICND.2005.1558735","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558735","url":null,"abstract":"This paper presents a new silicon solar cell structure obtained by the front surface texturisation using silicon micromachining technologies. A 'honeycomb' textured front surface has been obtained using a photolitographic process to generate patterns (disc holes) on the top surface followed by isotropic etching in HNO/sub 3/ : HF : CH3COOH up to join together of the wells. For the front surface losses characterization, the spectral dependence reflection has been investigated by spectrophotometric measurements. The surface reflectivity was lowered at 5% (30% in the case of untextured monocrystalline surface). The p-n junction made by phosphorus diffusion at /spl sim/0.8 /spl mu/m follows the honeycomb profile. In order to ensure low series resistances a p+ bor diffusion on the back of the structure was made. The fabrication process was completed with an ohmic contacts (Al: on top and on the back surface).","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83540369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558736
F. Iacomi, M. Purica, E. Budianu, D. Macovei
The Mn, Sb and Se doped CdS thin films have been prepared using vacuum thermally evaporated mixed powders. XRD, AFM, optical spectroscopy and electrical measurements investigated the films deposited onto glass and silicon wafer substrates. The thin films have a textured hexagonal structure and after a heat treatment at 723 K become all transparent and have a low reflectivity. The CdS thin films doped with Sb and Se perform a relatively high electrical conductivity.
{"title":"Synthesis of the transparent and conductive CdS thin films for optoelectronic devices applications","authors":"F. Iacomi, M. Purica, E. Budianu, D. Macovei","doi":"10.1109/SMICND.2005.1558736","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558736","url":null,"abstract":"The Mn, Sb and Se doped CdS thin films have been prepared using vacuum thermally evaporated mixed powders. XRD, AFM, optical spectroscopy and electrical measurements investigated the films deposited onto glass and silicon wafer substrates. The thin films have a textured hexagonal structure and after a heat treatment at 723 K become all transparent and have a low reflectivity. The CdS thin films doped with Sb and Se perform a relatively high electrical conductivity.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76461430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558775
A. Duţă, I. Visa, S. Manolache, A. Enesca, L. Andronic, G. Calin
Wide band gap semiconductors are efficient in photo-electrochemical cells included in solar energy conversion systems: photovoltaic cell, photo-catalysts for hydrogen production via water splitting or for pollutants degradation; nanostructured TiO2 (anatase) can be used in all of these applications, with a careful control of the properties; the challenge is to identify a technique, reliable and up-scalable that allows tailoring anatase according to the requirements; the paper presents the results in obtaining TiO2 with various morphologies by using spray pyrolysis deposition (SPD) and discusses upon the performances of a virtual prototype for a laboratory automatic SPD installation
{"title":"Nanostructured TiO/sub 2/ for solar energy conversion","authors":"A. Duţă, I. Visa, S. Manolache, A. Enesca, L. Andronic, G. Calin","doi":"10.1109/SMICND.2005.1558775","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558775","url":null,"abstract":"Wide band gap semiconductors are efficient in photo-electrochemical cells included in solar energy conversion systems: photovoltaic cell, photo-catalysts for hydrogen production via water splitting or for pollutants degradation; nanostructured TiO2 (anatase) can be used in all of these applications, with a careful control of the properties; the challenge is to identify a technique, reliable and up-scalable that allows tailoring anatase according to the requirements; the paper presents the results in obtaining TiO2 with various morphologies by using spray pyrolysis deposition (SPD) and discusses upon the performances of a virtual prototype for a laboratory automatic SPD installation","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/SMICND.2005.1558775","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72478960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558728
J. Valentin, P. Arguel, O. Bouchard, F. Lozes-Dupuy, S. Bonnefont
Modelling of a novel monolithic optical phase-shift detector is presented. The device consists of a diffraction grating etched at the surface of a p-n photodiode on silicon. The photodiode generates a current depending on the relative phase between two incident beams collimated toward the diffraction grating. It is shown that the photocurrent contrast, given by the whole range of the phase variation, can be optimised by a precise determination of the period, depth and filling factor of the grating. Detailed analysis of the device performance for TE and TM polarization shows its high sensitivity to the above geometrical parameter variations.
{"title":"Analysis of the sensitivity of a monolithic optical phase-shift detector to geometrical parameter variations","authors":"J. Valentin, P. Arguel, O. Bouchard, F. Lozes-Dupuy, S. Bonnefont","doi":"10.1109/SMICND.2005.1558728","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558728","url":null,"abstract":"Modelling of a novel monolithic optical phase-shift detector is presented. The device consists of a diffraction grating etched at the surface of a p-n photodiode on silicon. The photodiode generates a current depending on the relative phase between two incident beams collimated toward the diffraction grating. It is shown that the photocurrent contrast, given by the whole range of the phase variation, can be optimised by a precise determination of the period, depth and filling factor of the grating. Detailed analysis of the device performance for TE and TM polarization shows its high sensitivity to the above geometrical parameter variations.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74154547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558816
I. Codreanu
This paper analyses two optimization procedures: one based on genetic algorithms and the other on differential evolution. We apply these algorithms on a particular problem from the field of microfluidics in order to demonstrate how they can be used in design optimization. The improvement of the results, and also the simplicity and flexibility of the algorithms encourages us to suggest the use of these techniques in other problems from other areas in MEMS design
{"title":"A parallel between differential evolution and genetic algorithms with exemplification in a microfluidics optimization problem","authors":"I. Codreanu","doi":"10.1109/SMICND.2005.1558816","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558816","url":null,"abstract":"This paper analyses two optimization procedures: one based on genetic algorithms and the other on differential evolution. We apply these algorithms on a particular problem from the field of microfluidics in order to demonstrate how they can be used in design optimization. The improvement of the results, and also the simplicity and flexibility of the algorithms encourages us to suggest the use of these techniques in other problems from other areas in MEMS design","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76311944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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