Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558796
G. Brezeanu
As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included
{"title":"Silicon carbide (SiC): a short history. an analytical approach for SiC power device design","authors":"G. Brezeanu","doi":"10.1109/SMICND.2005.1558796","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558796","url":null,"abstract":"As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"2013 1","pages":"345-348 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86485387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558804
A. Danchiv, M. Bodea, C. Dan
Tins paper presents the systematic first order manual noise analysis for the CMOS active loud standard and folded cascade differential stages and a standard OTA stage. The basic equations for noise performance analysis are developed and the results are checked by SPICE simulation. A standard 0.6 mum CMOS processes is used
本文对CMOS有源噪声标准级、折叠级联差动级和标准OTA级进行了系统的一阶人工噪声分析。建立了噪声性能分析的基本方程，并通过SPICE仿真对分析结果进行了验证。使用标准的0.6 μ m CMOS工艺
{"title":"Standard input CMOS gain stages noise analysis","authors":"A. Danchiv, M. Bodea, C. Dan","doi":"10.1109/SMICND.2005.1558804","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558804","url":null,"abstract":"Tins paper presents the systematic first order manual noise analysis for the CMOS active loud standard and folded cascade differential stages and a standard OTA stage. The basic equations for noise performance analysis are developed and the results are checked by SPICE simulation. A standard 0.6 mum CMOS processes is used","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"375-378 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76029383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558824
G. Caruntu, M. Drãgulinescu
In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for magnetotransistor structures realised in the bipolar and MOS circuits technology. By using the numerical simulation, the values of the noise-equivalent magnetic induction spectral density for different structure devices are compared and it is also emphasized the way in which choosing the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors
{"title":"The noise-equivalent magnetic induction spectral density of magnetotransistors","authors":"G. Caruntu, M. Drãgulinescu","doi":"10.1109/SMICND.2005.1558824","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558824","url":null,"abstract":"In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for magnetotransistor structures realised in the bipolar and MOS circuits technology. By using the numerical simulation, the values of the noise-equivalent magnetic induction spectral density for different structure devices are compared and it is also emphasized the way in which choosing the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"27 1","pages":"451-454 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74738494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558707
R. Plugaru, A. Cremades, J. Piqueras
Nanorods of titanium oxide (TiO/sub 2/) were obtained by thermally activated growth process carried out on pellets of nanocrystalline powder with mixed anatase and rutile structures. The nanostructured array consists of nanorods with length between 300 nm and I /spl mu/m and hexagonal cross section of 100-200 nm diameter. Herein it is shown that one can obtain information on the nanostructure growth from cathodoluminescence emission spectra. The growth process of the rods is mainly associated with the presence of the anatase phase. The key role of characteristic defects in semiconductor oxides, namely oxygen vacancies and Ti/sup n+/ ions is discussed.
{"title":"Growth of titanium oxide nanorods","authors":"R. Plugaru, A. Cremades, J. Piqueras","doi":"10.1109/SMICND.2005.1558707","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558707","url":null,"abstract":"Nanorods of titanium oxide (TiO/sub 2/) were obtained by thermally activated growth process carried out on pellets of nanocrystalline powder with mixed anatase and rutile structures. The nanostructured array consists of nanorods with length between 300 nm and I /spl mu/m and hexagonal cross section of 100-200 nm diameter. Herein it is shown that one can obtain information on the nanostructure growth from cathodoluminescence emission spectra. The growth process of the rods is mainly associated with the presence of the anatase phase. The key role of characteristic defects in semiconductor oxides, namely oxygen vacancies and Ti/sup n+/ ions is discussed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"30 1","pages":"51-54 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80588057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558708
I. Stavarache, M. Ciurea, V. Iancu
The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.
{"title":"Quantum confinement in the photoluminescence of nanocrystalline porous silicon","authors":"I. Stavarache, M. Ciurea, V. Iancu","doi":"10.1109/SMICND.2005.1558708","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558708","url":null,"abstract":"The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"60 1","pages":"55-58 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90849426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558785
E. Hamciuc, M. Brumǎ, C. Hamciuc, R. Lungu
Aromatic polyimides containing nitrile polar functional groups with potential piezoelectric properties have been synthesized by solution polycondensation of aromatic diamines having nitrile group with various aromatic dianhydrides. The polymers were easily soluble in polar aprotic solvents such as N-methylpirrolidone, N,N-dimethylformamide and N,N-dimethylacetamide. Thin transparent films having a thickness of tens of micrometers have been prepared from N-methylpyrrolidinone solutions by casting onto glass substrates. The polymers showed high thermal stability with decomposition temperature being above 430 degC and glass transition temperature in the range of 200-280 degC, with a large interval between glass transition and decomposition temperature
{"title":"Modified aromatic polyimides with potential piezoelectric properties","authors":"E. Hamciuc, M. Brumǎ, C. Hamciuc, R. Lungu","doi":"10.1109/SMICND.2005.1558785","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558785","url":null,"abstract":"Aromatic polyimides containing nitrile polar functional groups with potential piezoelectric properties have been synthesized by solution polycondensation of aromatic diamines having nitrile group with various aromatic dianhydrides. The polymers were easily soluble in polar aprotic solvents such as N-methylpirrolidone, N,N-dimethylformamide and N,N-dimethylacetamide. Thin transparent films having a thickness of tens of micrometers have been prepared from N-methylpyrrolidinone solutions by casting onto glass substrates. The polymers showed high thermal stability with decomposition temperature being above 430 degC and glass transition temperature in the range of 200-280 degC, with a large interval between glass transition and decomposition temperature","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"43 1","pages":"305-308 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90492680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558734
M. Kusko, C. Kusko, D. Cristea
In this work we have analyzed from theoretical point of view a new proposed microring resonator structure based on the wafer bonding technique. We focused our attention on obtaining the single-mode operation of the microring resonator. We have found that this requirement can be established by imposing a lateral offset between ring and bus waveguide.
{"title":"Design of vertically coupled microring resonators","authors":"M. Kusko, C. Kusko, D. Cristea","doi":"10.1109/SMICND.2005.1558734","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558734","url":null,"abstract":"In this work we have analyzed from theoretical point of view a new proposed microring resonator structure based on the wafer bonding technique. We focused our attention on obtaining the single-mode operation of the microring resonator. We have found that this requirement can be established by imposing a lateral offset between ring and bus waveguide.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"77 1","pages":"153-156 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89413784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558798
A. Pérez‐Tomás, P. Godignon, N. Mestres, J. Montserrat, J. Millán
Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta2Si and TaSi2 tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta2Si oxidation more suitable than the one from TaSi 2 for gate applications. However, the oxidized TaSi2 layers present improved dielectric strength with reduced leakage current
{"title":"A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC","authors":"A. Pérez‐Tomás, P. Godignon, N. Mestres, J. Montserrat, J. Millán","doi":"10.1109/SMICND.2005.1558798","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558798","url":null,"abstract":"Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta2Si and TaSi2 tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta2Si oxidation more suitable than the one from TaSi 2 for gate applications. However, the oxidized TaSi2 layers present improved dielectric strength with reduced leakage current","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"33 1","pages":"353-356 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85930830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558740
M. Exarchos, V. Theonas, G. Papaioannou, G. Constantinidis, S. Psychias, D. Vasilache, M. Dragoman, A. Muller, D. Neculoiu
The paper presents the investigation of the temperature dependence of the charging mechanism in RF-MEMS switch insulating layer. The accumulated charge kinetics has been monitored through the transient response of the device capacitance. The transient response is shown to follow rather a stretched exponential law than an exponential one. The time scale of the process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot. This allows the determination of the time constant of the contributing mechanism at room temperature.
{"title":"Investigation of thermally activated charging effects in RF-MEMS switches","authors":"M. Exarchos, V. Theonas, G. Papaioannou, G. Constantinidis, S. Psychias, D. Vasilache, M. Dragoman, A. Muller, D. Neculoiu","doi":"10.1109/SMICND.2005.1558740","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558740","url":null,"abstract":"The paper presents the investigation of the temperature dependence of the charging mechanism in RF-MEMS switch insulating layer. The accumulated charge kinetics has been monitored through the transient response of the device capacitance. The transient response is shown to follow rather a stretched exponential law than an exponential one. The time scale of the process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot. This allows the determination of the time constant of the contributing mechanism at room temperature.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"7 1","pages":"175-178 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84335186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1080/00207217.2011.601439
C. Popa
A new n inputs current-mode Euclidean distance circuit will be presented. For improving the-circuit frequency response, only MOS transistors working in saturation will be used and a current-mode operation of the circuit will be imposed. The circuit output current, which represents the Euclidean distance function, is not dependent on technological parameters, with the result of an important reducing of the circuit errors. The Euclidean distance circuit is designed to be implemented in 0.35mum CMOS technology for n=16 inputs on a die area of about 45mumtimes60mum
{"title":"Current-mode Euclidean distance circuit independent on technological parameters","authors":"C. Popa","doi":"10.1080/00207217.2011.601439","DOIUrl":"https://doi.org/10.1080/00207217.2011.601439","url":null,"abstract":"A new n inputs current-mode Euclidean distance circuit will be presented. For improving the-circuit frequency response, only MOS transistors working in saturation will be used and a current-mode operation of the circuit will be imposed. The circuit output current, which represents the Euclidean distance function, is not dependent on technological parameters, with the result of an important reducing of the circuit errors. The Euclidean distance circuit is designed to be implemented in 0.35mum CMOS technology for n=16 inputs on a die area of about 45mumtimes60mum","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"41 1","pages":"459-462 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84579075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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