Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558733
V. Schiopu, M. Macrin, I. Cernica
A sol-gel method has been developed to prepare pure yttrium aluminium garnet, Y/sub 3/Al/sub 5/O/sub 12/ (YAG), doped with cerium. The XRD pattern of the powder calcinated at 1100/spl deg/C shows the formation of single phase nanocrystal garnet materials with good performances provide by emission spectra of white light LEDs using these phosphors.
{"title":"Preparation of yttrium aluminum garnet doped with cerium for application in optoelectronics","authors":"V. Schiopu, M. Macrin, I. Cernica","doi":"10.1109/SMICND.2005.1558733","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558733","url":null,"abstract":"A sol-gel method has been developed to prepare pure yttrium aluminium garnet, Y/sub 3/Al/sub 5/O/sub 12/ (YAG), doped with cerium. The XRD pattern of the powder calcinated at 1100/spl deg/C shows the formation of single phase nanocrystal garnet materials with good performances provide by emission spectra of white light LEDs using these phosphors.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"102 1","pages":"149-152 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75701761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558700
G. Amaratunga, A. S. Teh, S. Cha, G. W. Ho, Jae Eun Jang, Yang Yang, Young Jin Choi, K. Teo, S. Dalal, D J Kang, N. Rupesinghe, William I. Milne, D. Hasko, M. Welland, Jong Min Kim
In this paper we report the use of in-situ grown single wall carbon nanotubes (SWCNTs) from pre-patterned catalyst islands to construct nanotube electronics. The SWCNTs were grown via thermal chemical vapour deposition (CVD) on catalysts islands which were prepared by sputtering, initially, alignment marks are patterned simultaneously with the catalysts islands to enable accurate overlay of contact patterns during the top down fabrication approach for SWCNT devices. The gate transfer characteristics of p-channel SWCNTs are presented. The use of pre-patterned catalyst islands allows control of the SWCNT location required for integrated circuits. Characteristics of ZnO nanowire transistors are also introduced. Very high mobilities are measured in n-channel devices in which the gate is defined in a self aligned manner to have a nanoscale air-gap insulator. The characteristics of the ZnO transistor are comparable to those of achieved from SWCNTs. This raises the possibility of using SWCNTs for p-channel and ZnO nanowires for n-channel in complimentary switching devices.
{"title":"Nanotube and nanowire transistors","authors":"G. Amaratunga, A. S. Teh, S. Cha, G. W. Ho, Jae Eun Jang, Yang Yang, Young Jin Choi, K. Teo, S. Dalal, D J Kang, N. Rupesinghe, William I. Milne, D. Hasko, M. Welland, Jong Min Kim","doi":"10.1109/SMICND.2005.1558700","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558700","url":null,"abstract":"In this paper we report the use of in-situ grown single wall carbon nanotubes (SWCNTs) from pre-patterned catalyst islands to construct nanotube electronics. The SWCNTs were grown via thermal chemical vapour deposition (CVD) on catalysts islands which were prepared by sputtering, initially, alignment marks are patterned simultaneously with the catalysts islands to enable accurate overlay of contact patterns during the top down fabrication approach for SWCNT devices. The gate transfer characteristics of p-channel SWCNTs are presented. The use of pre-patterned catalyst islands allows control of the SWCNT location required for integrated circuits. Characteristics of ZnO nanowire transistors are also introduced. Very high mobilities are measured in n-channel devices in which the gate is defined in a self aligned manner to have a nanoscale air-gap insulator. The characteristics of the ZnO transistor are comparable to those of achieved from SWCNTs. This raises the possibility of using SWCNTs for p-channel and ZnO nanowires for n-channel in complimentary switching devices.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"15 9 1","pages":"3-8 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82588361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558760
A. Coraci, C. Podaru, E. Manea, A. Ciuciumis, O. Corici
The use of microfluidic devices in biomedical research creates clinically useful technologies and devices (for biochemical reaction chambers, and physical particle separation), or in IC chip cooling applications has significant advantages. In the first case, because the fluid volumes within these microchannels are very small, usually several nanoliters, the amount of reagents and analytes used is quite small. In the second case, they present a negligible thermal resistance, due to direct contact with the chip dissipation surface. This paper presents some new technological methods used to prepare by surface microfabrication microchannels and other microfluidic elements, like chambers onto different substrates.
{"title":"New technological surface microfabrication methods used to obtain microchannels based systems onto various substrates","authors":"A. Coraci, C. Podaru, E. Manea, A. Ciuciumis, O. Corici","doi":"10.1109/SMICND.2005.1558760","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558760","url":null,"abstract":"The use of microfluidic devices in biomedical research creates clinically useful technologies and devices (for biochemical reaction chambers, and physical particle separation), or in IC chip cooling applications has significant advantages. In the first case, because the fluid volumes within these microchannels are very small, usually several nanoliters, the amount of reagents and analytes used is quite small. In the second case, they present a negligible thermal resistance, due to direct contact with the chip dissipation surface. This paper presents some new technological methods used to prepare by surface microfabrication microchannels and other microfluidic elements, like chambers onto different substrates.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"32 1","pages":"249-252 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87911308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558800
M. Placidi, P. Godignon, N. Mestres, J. Esteve, G. Ferro, A. Leycuras, T. Chassagne
The development of high quality 3C-SiC layers on Si free of residual stress opens the possibility to use SiC for microsystems fabrication and to combine them with Si devices for sensor applications. A new front-side micromachining process technology for 3C-SiC layers on Si resonators has been developed. To show it feasibility several resonator cantilever or bridge test structures of various dimensions have been fabricated. The main advantage of SiC in comparison with Si lies on its higher Young's modulus (almost three times higher), which results in higher resonance frequencies and higher quality factors
{"title":"Fabrication of electrostatic resonators with monocrystalline 3C-SiC grown on silicon","authors":"M. Placidi, P. Godignon, N. Mestres, J. Esteve, G. Ferro, A. Leycuras, T. Chassagne","doi":"10.1109/SMICND.2005.1558800","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558800","url":null,"abstract":"The development of high quality 3C-SiC layers on Si free of residual stress opens the possibility to use SiC for microsystems fabrication and to combine them with Si devices for sensor applications. A new front-side micromachining process technology for 3C-SiC layers on Si resonators has been developed. To show it feasibility several resonator cantilever or bridge test structures of various dimensions have been fabricated. The main advantage of SiC in comparison with Si lies on its higher Young's modulus (almost three times higher), which results in higher resonance frequencies and higher quality factors","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"10 1","pages":"361-364 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74621145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558746
M. Szermer, A. Napieralski
In this paper the PTAT (point to absolute temperature) sensor design in CMOS technology is discussed and presented. Two different structures are described. The first one was implemented together with 12-bit ADC into a test chip. Although this sensor has a small linear region, only up to 60 C, it is fully functional and fulfills all requirements. Nevertheless, that was the reason why the new research was established, and a second structure with wide up to 180 /spl deg/C linear range was developed.
{"title":"The PTAT sensors in CMOS technology","authors":"M. Szermer, A. Napieralski","doi":"10.1109/SMICND.2005.1558746","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558746","url":null,"abstract":"In this paper the PTAT (point to absolute temperature) sensor design in CMOS technology is discussed and presented. Two different structures are described. The first one was implemented together with 12-bit ADC into a test chip. Although this sensor has a small linear region, only up to 60 C, it is fully functional and fulfills all requirements. Nevertheless, that was the reason why the new research was established, and a second structure with wide up to 180 /spl deg/C linear range was developed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"147 1","pages":"197-200 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74640739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558825
S. Spiridon, F. Op't Eynde
This paper presents the analyses and design of a very high speed 6 bit digital to analog converter intended for high-speed data streaming applications. The DAC is implemented using current switching technique. For eliminating non-monotonicity thermometric coding is used for the first five MSBs. The circuit has differential current outputs. The output voltage is generated externally by the current that the DAC injects into high precision resistors. The circuit operates at only 1.5 V, making it an ideal choice for low-power mobile applications. The circuit exhibits a third order intermodulation (IM3) of about 37 dBc with a full-scale two tone sinusoidal inputs at 150 MHz and 200 MHz. The DAC is fabricated in a 0.13mum in CMOS technology, it occupies 0.3 mm 2 and dissipates less then 7.5 mW
本文介绍了一种用于高速数据流应用的超高速6位数模转换器的分析和设计。该DAC采用电流开关技术实现。为了消除非单调性，对前五个msb使用温度编码。电路有差动电流输出。输出电压由DAC注入高精度电阻的电流在外部产生。该电路工作电压仅为1.5 V，使其成为低功耗移动应用的理想选择。该电路具有约37 dBc的三阶互调(IM3)，并具有150 MHz和200 MHz的满量程双音正弦输入。该DAC采用0.13 μ m CMOS技术制造，占地0.3 mm2，功耗小于7.5 mW
{"title":"A 6 bit resolution, 1 gsamples/sec digital to analog converter","authors":"S. Spiridon, F. Op't Eynde","doi":"10.1109/SMICND.2005.1558825","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558825","url":null,"abstract":"This paper presents the analyses and design of a very high speed 6 bit digital to analog converter intended for high-speed data streaming applications. The DAC is implemented using current switching technique. For eliminating non-monotonicity thermometric coding is used for the first five MSBs. The circuit has differential current outputs. The output voltage is generated externally by the current that the DAC injects into high precision resistors. The circuit operates at only 1.5 V, making it an ideal choice for low-power mobile applications. The circuit exhibits a third order intermodulation (IM3) of about 37 dBc with a full-scale two tone sinusoidal inputs at 150 MHz and 200 MHz. The DAC is fabricated in a 0.13mum in CMOS technology, it occupies 0.3 mm 2 and dissipates less then 7.5 mW","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"26 1","pages":"455-458 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84130819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558730
A. Dinescu, G. Conache, R. Gavrila
In order to decrease the dark current of a pn junction photodetector together with improving its photoelectric response, thinning of a silicon wafer can be achieved without losing its mechanical resistance by a special etching process performed on both sides of the wafer. Corrugated microstructures were obtained by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices and optical measurements were performed.
{"title":"Corrugated microstructures for silicon photodetectors","authors":"A. Dinescu, G. Conache, R. Gavrila","doi":"10.1109/SMICND.2005.1558730","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558730","url":null,"abstract":"In order to decrease the dark current of a pn junction photodetector together with improving its photoelectric response, thinning of a silicon wafer can be achieved without losing its mechanical resistance by a special etching process performed on both sides of the wafer. Corrugated microstructures were obtained by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices and optical measurements were performed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"137-140 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88693957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558779
E. Zasavitsky, V. Kantser, D. Meglei
Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025
{"title":"Thermoelectric power of p-doped PbTe semiconductor microwires with resonant states of thallium impurities","authors":"E. Zasavitsky, V. Kantser, D. Meglei","doi":"10.1109/SMICND.2005.1558779","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558779","url":null,"abstract":"Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025<x<0.005 double change of the sign of thermoelectric power is observed. In pure samples and samples with thallium concentration more than 1 at.% thermoelectric power it is positive in the whole temperature range. Various mechanisms which can lead to observable anomalies, including Kondo-like behavior of a nonmagnetic degenerate two-level system are discussed. Obtained experimental results let suppose that the observed anomalies can be interpreted on the basis of model of an impurity with mixed valences","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"12 1","pages":"281-284 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81432491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558759
D. Ulieru, A. Ciuciumis
The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.
{"title":"Laser patterning - innovative technology for mass production of microstructures","authors":"D. Ulieru, A. Ciuciumis","doi":"10.1109/SMICND.2005.1558759","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558759","url":null,"abstract":"The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"32 1","pages":"245-248 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76137012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558704
C. Iliescu, F. Tay
The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet etching process are analyzed. As a result of this analysis an improved technique for deep wet etching of glass is proposed. A 500-/spl mu/m thick Pyrex glass wafer was etched through using a Cr/Au and photoresist mask, from our knowledge this is the best result reported. For an improved surface an optimal solution HF/HCl (10:1) was established for Pyrex and soda lime glasses. The developed techniques are currently used for fabrication of microfluidic devices on glass.
{"title":"Wet etching of glass","authors":"C. Iliescu, F. Tay","doi":"10.1109/SMICND.2005.1558704","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558704","url":null,"abstract":"The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet etching process are analyzed. As a result of this analysis an improved technique for deep wet etching of glass is proposed. A 500-/spl mu/m thick Pyrex glass wafer was etched through using a Cr/Au and photoresist mask, from our knowledge this is the best result reported. For an improved surface an optimal solution HF/HCl (10:1) was established for Pyrex and soda lime glasses. The developed techniques are currently used for fabrication of microfluidic devices on glass.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"15 1","pages":"35-44 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74303555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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