Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558782
A. Enesca, A. Duţă, M. Nanu, C. Enache, R. van der Krol, J. Schoonman
The aim of this paper is to investigate the stability of the tungsten trioxide thin films in different conditions. Tungsten oxide (WO 3) films are prepared by means of the spray pyrolysis deposition (SPD) method using W(OC2H5)2 ethanol. The films were investigated from the morphologic (SEM), crystalline (XRD) and conductive point of view. The resulting films are conductive, crystalline and with a good conductivity in acid electrolyte. The photoelectrolysis seems to be the most efficient and non-polluting method that can be used for wafer splitting using like energy the sunlight radiation
{"title":"Photoelectrode materials of tungsten oxide (WO/sub 3/) for water splitting","authors":"A. Enesca, A. Duţă, M. Nanu, C. Enache, R. van der Krol, J. Schoonman","doi":"10.1109/SMICND.2005.1558782","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558782","url":null,"abstract":"The aim of this paper is to investigate the stability of the tungsten trioxide thin films in different conditions. Tungsten oxide (WO 3) films are prepared by means of the spray pyrolysis deposition (SPD) method using W(OC2H5)2 ethanol. The films were investigated from the morphologic (SEM), crystalline (XRD) and conductive point of view. The resulting films are conductive, crystalline and with a good conductivity in acid electrolyte. The photoelectrolysis seems to be the most efficient and non-polluting method that can be used for wafer splitting using like energy the sunlight radiation","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"31 1","pages":"293-296 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81581045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558829
O. Oltu, P. Milea, A. Simion
The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.
Xilinx和Altera为超大型新系列电路提供的最新FPGA测试技术基于测试芯片内部实现的逻辑分析仪。Xilintx的ChipScope和Altera的Signal Tap Logic analyzer允许仅使用JTAG接口在电路的所有内部节点中捕获和显示信号。本文介绍了作者利用ChipScope技术对飞机无线电导航标准定位系统的硬件模拟器进行验证和调试的经验。该系统在。基于Spartan 3(来自Xilinx)的FPGA开发板。
{"title":"Testing of digital circuitry using Xilinx chipscope logic analyzer","authors":"O. Oltu, P. Milea, A. Simion","doi":"10.1109/SMICND.2005.1558829","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558829","url":null,"abstract":"The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"63 1","pages":"471-474"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81268564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558817
A. Ciuciumis, I. Cernica
The paper presents indium tin oxide and cerium dioxide thin films obtained by sol-gel method and deposited on the different wood substrates. Films deposition was performed by immersion of the substrates into coating solution and flow-coating process. Investigation of the surface chemistry and morphology of the wood substrates before and after deposition were obtained by means of atomic force microscopy and optical microscopy. The sol-gel deposit on the wood substrates lowered the rates of water and water vapour sorption (absorption and/or adsorption)
{"title":"Synthesis and characterization of indium tin oxide and cerium dioxide thin films by sol-gel method","authors":"A. Ciuciumis, I. Cernica","doi":"10.1109/SMICND.2005.1558817","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558817","url":null,"abstract":"The paper presents indium tin oxide and cerium dioxide thin films obtained by sol-gel method and deposited on the different wood substrates. Films deposition was performed by immersion of the substrates into coating solution and flow-coating process. Investigation of the surface chemistry and morphology of the wood substrates before and after deposition were obtained by means of atomic force microscopy and optical microscopy. The sol-gel deposit on the wood substrates lowered the rates of water and water vapour sorption (absorption and/or adsorption)","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"220 1","pages":"425-428 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89127374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558732
S. Manolache, M. Nanu, A. Duţă, A. Goossens, J. Schoonman
The aim of the paper is to present the research made in order to improve the diode behaviour of CuSbS/sub 2/ absorber films used in solar cells. Films obtained with other solvent than water (ethanol) were tested. This films reveal a small improvement in the quality of the films but after the optimization of the ethanol amount that must be added the improvements can be more consistent. Sb-rich films were obtained, free of pinholes but the I-V measurement under illumination reveals a very small injection of electrons from the absorber into the n-type semiconductor.
{"title":"Improvements in the quality of CuSbS/sub 2/ films used in solid state solar cells","authors":"S. Manolache, M. Nanu, A. Duţă, A. Goossens, J. Schoonman","doi":"10.1109/SMICND.2005.1558732","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558732","url":null,"abstract":"The aim of the paper is to present the research made in order to improve the diode behaviour of CuSbS/sub 2/ absorber films used in solar cells. Films obtained with other solvent than water (ethanol) were tested. This films reveal a small improvement in the quality of the films but after the optimization of the ethanol amount that must be added the improvements can be more consistent. Sb-rich films were obtained, free of pinholes but the I-V measurement under illumination reveals a very small injection of electrons from the absorber into the n-type semiconductor.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"19 1","pages":"145-148 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72663048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558774
V. Kantser, S. Arapan, S. Carlig, F. Ermalai
In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures. a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall effect driven by coupling of fight and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians
{"title":"Spin-orbit interaction and spintronics effects in semiconductor structures driven by interband coupling through optical phonon like displacements","authors":"V. Kantser, S. Arapan, S. Carlig, F. Ermalai","doi":"10.1109/SMICND.2005.1558774","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558774","url":null,"abstract":"In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures. a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall effect driven by coupling of fight and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"40 1","pages":"263-266 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73643199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558787
S. Gamage, V. Pathirana, F. Udrea
Several vertical IGBT electro-thermal models are currently available on circuit simulators. However, no reliable electro-thermal models have been proposed for the lateral IGBT (LIGBT). In this paper we present a novel steady-state electro-thermal model for a LIGBT on thin Silicon-On-Insulator (SOI) technology. The model is fully-assessed against experimental results and numerical simulations
{"title":"A compact steady-state self-heating model for a thin SOI LIGBT","authors":"S. Gamage, V. Pathirana, F. Udrea","doi":"10.1109/SMICND.2005.1558787","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558787","url":null,"abstract":"Several vertical IGBT electro-thermal models are currently available on circuit simulators. However, no reliable electro-thermal models have been proposed for the lateral IGBT (LIGBT). In this paper we present a novel steady-state electro-thermal model for a LIGBT on thin Silicon-On-Insulator (SOI) technology. The model is fully-assessed against experimental results and numerical simulations","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"67 1","pages":"311-314 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72873567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558713
G. Zegrya, N. Bazhenov, K. Mynbaev, S. Pokutnyi
Advantages of semiconductor quantum dots (QDs) for study and diagnostics of biological systems are discussed A new method for amino acid diagnostics using semiconductor QDs is proposed. Interaction of isolated QDs with charged amino acids is studied in detail. It is shown that such interaction results in a shift of the QD luminescence spectra by several dozens of meV. This effect provides new possibilities for identification of biological objects using QDs.
{"title":"Application of semiconductor quantum dots for a study of biological systems","authors":"G. Zegrya, N. Bazhenov, K. Mynbaev, S. Pokutnyi","doi":"10.1109/SMICND.2005.1558713","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558713","url":null,"abstract":"Advantages of semiconductor quantum dots (QDs) for study and diagnostics of biological systems are discussed A new method for amino acid diagnostics using semiconductor QDs is proposed. Interaction of isolated QDs with charged amino acids is studied in detail. It is shown that such interaction results in a shift of the QD luminescence spectra by several dozens of meV. This effect provides new possibilities for identification of biological objects using QDs.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"7 1","pages":"73-76 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87895306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558702
K. Zekentes, N. Camara, L. Romanov, A. Kirillov, M. S. Boltovets, A. Lebedev, K. Vassilevski
4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 /spl mu/m, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.
{"title":"4H-SiC PIN diodes for microwave applications","authors":"K. Zekentes, N. Camara, L. Romanov, A. Kirillov, M. S. Boltovets, A. Lebedev, K. Vassilevski","doi":"10.1109/SMICND.2005.1558702","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558702","url":null,"abstract":"4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 /spl mu/m, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"34 1","pages":"17-25 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81018925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558756
M. Simion, I. Kleps, T. Ignat, E. Condac, F. Craciunoiu, A. Angelescu, M. Miu, A. Bragaru, M. Costache, L. Savu
In this paper, we focus on the design, the experimental technology and characterization of a silicon microchip for rapid testing of DNA samples. For the identification it was used a polymerase chain-reaction PCR technique with biomolecules attached. In the last year, there have been a number of recent advances in the field of miniaturized reaction and separation systems, including the construction of fully integrated "lab-on-chip" systems. This paper describes a micro biochip realized on silicon wafers, using standard microfabrication techniques. The biochip is designed to be complex and versatile; it contains a microreactor for the biological material and on the backside of the chip there are heating resistances that would assure the temperature cycles for PCR reactions. The biologic material in the test reactors can be optically monitored because the reactor is covered with transparent glass. The reactor surface was functionalized in order to obtain reactive sites for binding DNA-oligonucleotides for "in vitro" DNA identification.
{"title":"Bioanalytical silicon micro-devices for DNA","authors":"M. Simion, I. Kleps, T. Ignat, E. Condac, F. Craciunoiu, A. Angelescu, M. Miu, A. Bragaru, M. Costache, L. Savu","doi":"10.1109/SMICND.2005.1558756","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558756","url":null,"abstract":"In this paper, we focus on the design, the experimental technology and characterization of a silicon microchip for rapid testing of DNA samples. For the identification it was used a polymerase chain-reaction PCR technique with biomolecules attached. In the last year, there have been a number of recent advances in the field of miniaturized reaction and separation systems, including the construction of fully integrated \"lab-on-chip\" systems. This paper describes a micro biochip realized on silicon wafers, using standard microfabrication techniques. The biochip is designed to be complex and versatile; it contains a microreactor for the biological material and on the backside of the chip there are heating resistances that would assure the temperature cycles for PCR reactions. The biologic material in the test reactors can be optically monitored because the reactor is covered with transparent glass. The reactor surface was functionalized in order to obtain reactive sites for binding DNA-oligonucleotides for \"in vitro\" DNA identification.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"116 1","pages":"235-238 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87700344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558799
G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu
A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified
{"title":"Breakdown performances improvements of SiC diodes using high-k dielectrics","authors":"G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu","doi":"10.1109/SMICND.2005.1558799","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558799","url":null,"abstract":"A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"17 1","pages":"357-360 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88266522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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