Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558779
E. Zasavitsky, V. Kantser, D. Meglei
Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025
{"title":"Thermoelectric power of p-doped PbTe semiconductor microwires with resonant states of thallium impurities","authors":"E. Zasavitsky, V. Kantser, D. Meglei","doi":"10.1109/SMICND.2005.1558779","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558779","url":null,"abstract":"Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025<x<0.005 double change of the sign of thermoelectric power is observed. In pure samples and samples with thallium concentration more than 1 at.% thermoelectric power it is positive in the whole temperature range. Various mechanisms which can lead to observable anomalies, including Kondo-like behavior of a nonmagnetic degenerate two-level system are discussed. Obtained experimental results let suppose that the observed anomalies can be interpreted on the basis of model of an impurity with mixed valences","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"12 1","pages":"281-284 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81432491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558759
D. Ulieru, A. Ciuciumis
The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.
{"title":"Laser patterning - innovative technology for mass production of microstructures","authors":"D. Ulieru, A. Ciuciumis","doi":"10.1109/SMICND.2005.1558759","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558759","url":null,"abstract":"The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"32 1","pages":"245-248 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76137012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558704
C. Iliescu, F. Tay
The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet etching process are analyzed. As a result of this analysis an improved technique for deep wet etching of glass is proposed. A 500-/spl mu/m thick Pyrex glass wafer was etched through using a Cr/Au and photoresist mask, from our knowledge this is the best result reported. For an improved surface an optimal solution HF/HCl (10:1) was established for Pyrex and soda lime glasses. The developed techniques are currently used for fabrication of microfluidic devices on glass.
{"title":"Wet etching of glass","authors":"C. Iliescu, F. Tay","doi":"10.1109/SMICND.2005.1558704","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558704","url":null,"abstract":"The purpose of this paper is to find ways to Improve the wet etching techniques used for glass etching. Essential elements of glass wet etching process such as: influence of glass composition, etching rate, influence of the residual stress in the masking layer, characterization of the main masking materials, the quality of surface generated using wet etching process are analyzed. As a result of this analysis an improved technique for deep wet etching of glass is proposed. A 500-/spl mu/m thick Pyrex glass wafer was etched through using a Cr/Au and photoresist mask, from our knowledge this is the best result reported. For an improved surface an optimal solution HF/HCl (10:1) was established for Pyrex and soda lime glasses. The developed techniques are currently used for fabrication of microfluidic devices on glass.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"15 1","pages":"35-44 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74303555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558762
C. Codreanu, I. Stan, F. Craciunoiu, V. Obreja
This paper presents a temperature monitoring system used for the experimental investigation and characterization of materials and microstructures or devices under different temperature conditions. After a general description of the measurement system, the temperature control and measurement block is presented. The heating and the sensing elements are firstly presented, and then the temperature monitoring unit is described. Besides the constructive solutions, problems related to thermal contact, calibration, error and sensitivity are also discussed.
{"title":"In situ temperature monitoring system for experimental investigation of microstructures","authors":"C. Codreanu, I. Stan, F. Craciunoiu, V. Obreja","doi":"10.1109/SMICND.2005.1558762","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558762","url":null,"abstract":"This paper presents a temperature monitoring system used for the experimental investigation and characterization of materials and microstructures or devices under different temperature conditions. After a general description of the measurement system, the temperature control and measurement block is presented. The heating and the sensing elements are firstly presented, and then the temperature monitoring unit is described. Besides the constructive solutions, problems related to thermal contact, calibration, error and sensitivity are also discussed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"18 1","pages":"257-260 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84430895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558774
V. Kantser, S. Arapan, S. Carlig, F. Ermalai
In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures. a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall effect driven by coupling of fight and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians
{"title":"Spin-orbit interaction and spintronics effects in semiconductor structures driven by interband coupling through optical phonon like displacements","authors":"V. Kantser, S. Arapan, S. Carlig, F. Ermalai","doi":"10.1109/SMICND.2005.1558774","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558774","url":null,"abstract":"In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures. a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall effect driven by coupling of fight and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"40 1","pages":"263-266 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73643199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558732
S. Manolache, M. Nanu, A. Duţă, A. Goossens, J. Schoonman
The aim of the paper is to present the research made in order to improve the diode behaviour of CuSbS/sub 2/ absorber films used in solar cells. Films obtained with other solvent than water (ethanol) were tested. This films reveal a small improvement in the quality of the films but after the optimization of the ethanol amount that must be added the improvements can be more consistent. Sb-rich films were obtained, free of pinholes but the I-V measurement under illumination reveals a very small injection of electrons from the absorber into the n-type semiconductor.
{"title":"Improvements in the quality of CuSbS/sub 2/ films used in solid state solar cells","authors":"S. Manolache, M. Nanu, A. Duţă, A. Goossens, J. Schoonman","doi":"10.1109/SMICND.2005.1558732","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558732","url":null,"abstract":"The aim of the paper is to present the research made in order to improve the diode behaviour of CuSbS/sub 2/ absorber films used in solar cells. Films obtained with other solvent than water (ethanol) were tested. This films reveal a small improvement in the quality of the films but after the optimization of the ethanol amount that must be added the improvements can be more consistent. Sb-rich films were obtained, free of pinholes but the I-V measurement under illumination reveals a very small injection of electrons from the absorber into the n-type semiconductor.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"19 1","pages":"145-148 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72663048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558725
D. Neculoiu, G. Konstantinidis, K. Mutamba, A. Takacs, D. Vasilache, C. Sydlo, T. Kostopoulos, A. Stavrinidis, A. Muller
The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.
{"title":"Electromagnetic modeling of micromachined GaN thin films for FBAR applications","authors":"D. Neculoiu, G. Konstantinidis, K. Mutamba, A. Takacs, D. Vasilache, C. Sydlo, T. Kostopoulos, A. Stavrinidis, A. Muller","doi":"10.1109/SMICND.2005.1558725","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558725","url":null,"abstract":"The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"119-122 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77922245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558829
O. Oltu, P. Milea, A. Simion
The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.
Xilinx和Altera为超大型新系列电路提供的最新FPGA测试技术基于测试芯片内部实现的逻辑分析仪。Xilintx的ChipScope和Altera的Signal Tap Logic analyzer允许仅使用JTAG接口在电路的所有内部节点中捕获和显示信号。本文介绍了作者利用ChipScope技术对飞机无线电导航标准定位系统的硬件模拟器进行验证和调试的经验。该系统在。基于Spartan 3(来自Xilinx)的FPGA开发板。
{"title":"Testing of digital circuitry using Xilinx chipscope logic analyzer","authors":"O. Oltu, P. Milea, A. Simion","doi":"10.1109/SMICND.2005.1558829","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558829","url":null,"abstract":"The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"63 1","pages":"471-474"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81268564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558782
A. Enesca, A. Duţă, M. Nanu, C. Enache, R. van der Krol, J. Schoonman
The aim of this paper is to investigate the stability of the tungsten trioxide thin films in different conditions. Tungsten oxide (WO 3) films are prepared by means of the spray pyrolysis deposition (SPD) method using W(OC2H5)2 ethanol. The films were investigated from the morphologic (SEM), crystalline (XRD) and conductive point of view. The resulting films are conductive, crystalline and with a good conductivity in acid electrolyte. The photoelectrolysis seems to be the most efficient and non-polluting method that can be used for wafer splitting using like energy the sunlight radiation
{"title":"Photoelectrode materials of tungsten oxide (WO/sub 3/) for water splitting","authors":"A. Enesca, A. Duţă, M. Nanu, C. Enache, R. van der Krol, J. Schoonman","doi":"10.1109/SMICND.2005.1558782","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558782","url":null,"abstract":"The aim of this paper is to investigate the stability of the tungsten trioxide thin films in different conditions. Tungsten oxide (WO 3) films are prepared by means of the spray pyrolysis deposition (SPD) method using W(OC2H5)2 ethanol. The films were investigated from the morphologic (SEM), crystalline (XRD) and conductive point of view. The resulting films are conductive, crystalline and with a good conductivity in acid electrolyte. The photoelectrolysis seems to be the most efficient and non-polluting method that can be used for wafer splitting using like energy the sunlight radiation","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"31 1","pages":"293-296 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81581045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558702
K. Zekentes, N. Camara, L. Romanov, A. Kirillov, M. S. Boltovets, A. Lebedev, K. Vassilevski
4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 /spl mu/m, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.
{"title":"4H-SiC PIN diodes for microwave applications","authors":"K. Zekentes, N. Camara, L. Romanov, A. Kirillov, M. S. Boltovets, A. Lebedev, K. Vassilevski","doi":"10.1109/SMICND.2005.1558702","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558702","url":null,"abstract":"4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 /spl mu/m, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"34 1","pages":"17-25 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81018925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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