Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558791
E. Bodegom, R. Widenhorn, D.A. lordache
The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
{"title":"Interpreting fitting parameters of temperature dependence of dark currents in some CCDs","authors":"E. Bodegom, R. Widenhorn, D.A. lordache","doi":"10.1109/SMICND.2005.1558791","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558791","url":null,"abstract":"The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"34 1","pages":"327-330 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89300711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558776
C. Miclea, L. Amarande, C. Tănăsoiu, I. Spanulescu, C. Miclea
Effect of Bi additives on the piezoelectric properties of PT ceramics having the formula (Pb1-3x/2Bix)(Ti0.98Mn0.02)O 3 with x=0.04, 0.06, 0.08 was investigated. The samples were prepared by conventional ceramic technique, using p.a. purity raw materials. The mixed powders were sintered at temperatures between 1050-1300degC. Poling was done in fields of about 70 kV/cm. Density and coupling factors of the samples were determined as a function of sintering temperatures, and doping level. Temperature dependence of the main piezoelectric characteristics was also investigated for temperatures as high as 500degC. A Curie point of 450degC, a low dielectric constant (<140) and a large electromechanical anisotropy (the radial mode is nearly inexistent, at room temperature and the thickness coupling factor is about 0.4) were found. These enhanced properties make such ceramics very attractive for high temperature and high frequency transducers applications
{"title":"Piezoelectric properties of bismuth modified lead titanate ceramics","authors":"C. Miclea, L. Amarande, C. Tănăsoiu, I. Spanulescu, C. Miclea","doi":"10.1109/SMICND.2005.1558776","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558776","url":null,"abstract":"Effect of Bi additives on the piezoelectric properties of PT ceramics having the formula (Pb1-3x/2Bix)(Ti0.98Mn0.02)O 3 with x=0.04, 0.06, 0.08 was investigated. The samples were prepared by conventional ceramic technique, using p.a. purity raw materials. The mixed powders were sintered at temperatures between 1050-1300degC. Poling was done in fields of about 70 kV/cm. Density and coupling factors of the samples were determined as a function of sintering temperatures, and doping level. Temperature dependence of the main piezoelectric characteristics was also investigated for temperatures as high as 500degC. A Curie point of 450degC, a low dielectric constant (<140) and a large electromechanical anisotropy (the radial mode is nearly inexistent, at room temperature and the thickness coupling factor is about 0.4) were found. These enhanced properties make such ceramics very attractive for high temperature and high frequency transducers applications","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"42 1","pages":"271-274 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91310143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558811
S. Eftimie, A. Rusu
A special characteristic of a MOS transistor is that its drain current has a point somewhere around the threshold voltage where it almost doesn't vary with the temperature. This is called the Zero-TC (ZTC) point. By considering two different types of MOSFET models, a strong inversion and an unified one, it can see that both of them indicated the position of the ZTC point close to the measured one (sec Table 1). As this paper indicates, it is normally to presume that the larger value obtained with the unified model is due to the sub threshold component of the drain current. This is because the strong inversion model does not take it into account. Unlike this model, the unified one considers the drain current as a sum of the diffusion current, preponderant in weak inversion, and the drift current, which governs the strong inversion region. Because the ZTC point is somewhere between these two regions, it is normally to presume that the diffusion current has an influence on it. The paper will answer to this problem and will try to explain the results
{"title":"The influence of diffusion current on the zero-tc point of a MOS transistor","authors":"S. Eftimie, A. Rusu","doi":"10.1109/SMICND.2005.1558811","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558811","url":null,"abstract":"A special characteristic of a MOS transistor is that its drain current has a point somewhere around the threshold voltage where it almost doesn't vary with the temperature. This is called the Zero-TC (ZTC) point. By considering two different types of MOSFET models, a strong inversion and an unified one, it can see that both of them indicated the position of the ZTC point close to the measured one (sec Table 1). As this paper indicates, it is normally to presume that the larger value obtained with the unified model is due to the sub threshold component of the drain current. This is because the strong inversion model does not take it into account. Unlike this model, the unified one considers the drain current as a sum of the diffusion current, preponderant in weak inversion, and the drift current, which governs the strong inversion region. Because the ZTC point is somewhere between these two regions, it is normally to presume that the diffusion current has an influence on it. The paper will answer to this problem and will try to explain the results","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"12 1","pages":"401-404 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87513736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558762
C. Codreanu, I. Stan, F. Craciunoiu, V. Obreja
This paper presents a temperature monitoring system used for the experimental investigation and characterization of materials and microstructures or devices under different temperature conditions. After a general description of the measurement system, the temperature control and measurement block is presented. The heating and the sensing elements are firstly presented, and then the temperature monitoring unit is described. Besides the constructive solutions, problems related to thermal contact, calibration, error and sensitivity are also discussed.
{"title":"In situ temperature monitoring system for experimental investigation of microstructures","authors":"C. Codreanu, I. Stan, F. Craciunoiu, V. Obreja","doi":"10.1109/SMICND.2005.1558762","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558762","url":null,"abstract":"This paper presents a temperature monitoring system used for the experimental investigation and characterization of materials and microstructures or devices under different temperature conditions. After a general description of the measurement system, the temperature control and measurement block is presented. The heating and the sensing elements are firstly presented, and then the temperature monitoring unit is described. Besides the constructive solutions, problems related to thermal contact, calibration, error and sensitivity are also discussed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"18 1","pages":"257-260 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84430895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558737
R. Rebigan, D. Esinenco, M. Kusko
In this paper we describe the preliminary experiments for a polymeric (bio)chemical sensor-integrated on silicon substrate, based on the far-field interferometric method. The basic structure of the sensor consists of a sandwich-waveguide polymeric structure. Several experimental studies have been performed in order to optimize the technological flow. We also have performed design studies in order to optimize the proposed structure.
{"title":"Polymeric waveguides with bio(chemical) sensing applications-design and preliminary experimental results","authors":"R. Rebigan, D. Esinenco, M. Kusko","doi":"10.1109/SMICND.2005.1558737","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558737","url":null,"abstract":"In this paper we describe the preliminary experiments for a polymeric (bio)chemical sensor-integrated on silicon substrate, based on the far-field interferometric method. The basic structure of the sensor consists of a sandwich-waveguide polymeric structure. Several experimental studies have been performed in order to optimize the technological flow. We also have performed design studies in order to optimize the proposed structure.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"111 1","pages":"165-168 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77872863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558725
D. Neculoiu, G. Konstantinidis, K. Mutamba, A. Takacs, D. Vasilache, C. Sydlo, T. Kostopoulos, A. Stavrinidis, A. Muller
The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.
{"title":"Electromagnetic modeling of micromachined GaN thin films for FBAR applications","authors":"D. Neculoiu, G. Konstantinidis, K. Mutamba, A. Takacs, D. Vasilache, C. Sydlo, T. Kostopoulos, A. Stavrinidis, A. Muller","doi":"10.1109/SMICND.2005.1558725","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558725","url":null,"abstract":"The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"119-122 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77922245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558722
R. Marcelli, S. Catoni, L. Frenguelli
In this paper a new approach to obtain low losses coplanar waveguide (CPW) lines is described. A photolithographic process is performed by using SU-S thick negative photo-resist on low resistivity silicon to obtain CPW lines elevated with respect to the substrate to get the advantages from transmission line structures which are almost on-the-air.
{"title":"Low loss coplanar lines on low resistivity silicon SU-S thick negative photoresist","authors":"R. Marcelli, S. Catoni, L. Frenguelli","doi":"10.1109/SMICND.2005.1558722","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558722","url":null,"abstract":"In this paper a new approach to obtain low losses coplanar waveguide (CPW) lines is described. A photolithographic process is performed by using SU-S thick negative photo-resist on low resistivity silicon to obtain CPW lines elevated with respect to the substrate to get the advantages from transmission line structures which are almost on-the-air.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"107-110 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90624654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558781
V. Kantser, Z. Dashevsky, D. Meglei, I. Bejenari
The electric field effect (EFE) in a coaxial cylindrical capacitor configuration was used to study the modification of transport and thermoelectric properties of semiconductor PbTe and Bi2Te3 glass coated microwires. The first results of experimental measurements of wire transport properties under EFE show the increasing or decreasing of the average Seebeck coefficient in dependence of gate potential polarity in accordance with the theoretical analysis
{"title":"Cylindrical thermoelectric microwires under radial electric field effect","authors":"V. Kantser, Z. Dashevsky, D. Meglei, I. Bejenari","doi":"10.1109/SMICND.2005.1558781","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558781","url":null,"abstract":"The electric field effect (EFE) in a coaxial cylindrical capacitor configuration was used to study the modification of transport and thermoelectric properties of semiconductor PbTe and Bi2Te3 glass coated microwires. The first results of experimental measurements of wire transport properties under EFE show the increasing or decreasing of the average Seebeck coefficient in dependence of gate potential polarity in accordance with the theoretical analysis","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"40 1","pages":"289-292 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88557232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558752
C. Ravariu, A. Rusu, O. Nedelcu, F. Ravariu, F. Babarada, L. Dobrescu
The Silicon On Insulator technology has reached a new stage through the nanodevices way: Silicon On Nothing, where "Nothing" means a vacuum cavity underneath an ultrathin Si film. A mobile and thin semiconductor membrane results, by enlarging the cavity. In the empty space can be handled a bioliquid using a diffuser/nozzle micropump. The mobile Si membrane is bending by the substrate biasing and plays a double role: as actuator and detector. This paper presents a MEMS, based on a new work principle than traditional ISFETs, which detects the ionic analytes from a bioliquid and has its own actuator for the microfluidic handle.
{"title":"A MEMS dedicated to the bio-components detection, inspired from the SON architecture","authors":"C. Ravariu, A. Rusu, O. Nedelcu, F. Ravariu, F. Babarada, L. Dobrescu","doi":"10.1109/SMICND.2005.1558752","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558752","url":null,"abstract":"The Silicon On Insulator technology has reached a new stage through the nanodevices way: Silicon On Nothing, where \"Nothing\" means a vacuum cavity underneath an ultrathin Si film. A mobile and thin semiconductor membrane results, by enlarging the cavity. In the empty space can be handled a bioliquid using a diffuser/nozzle micropump. The mobile Si membrane is bending by the substrate biasing and plays a double role: as actuator and detector. This paper presents a MEMS, based on a new work principle than traditional ISFETs, which detects the ionic analytes from a bioliquid and has its own actuator for the microfluidic handle.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"73 1","pages":"219-222 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83978349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558827
E. Franti, D. Tufis, S. Goschin, M. Dascalu, P. Milea, G. Stefan, T. Balan, C. Slav, R. Demco
This paper refers to the implementation of a virtual environment for the robot interfaces testing. This software environment is very useful because, comparing to the experiments with real robots, it allow the testing and evaluation of different types of interfaces and different working environments with diverse configurations. A very important facility of this interactive software environment is the fact that the designers of the robots sensors and interfaces are able to work in parallel to design test, optimize and realize different control devices for the robot
{"title":"Virtual environment for robots interfaces design and testing","authors":"E. Franti, D. Tufis, S. Goschin, M. Dascalu, P. Milea, G. Stefan, T. Balan, C. Slav, R. Demco","doi":"10.1109/SMICND.2005.1558827","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558827","url":null,"abstract":"This paper refers to the implementation of a virtual environment for the robot interfaces testing. This software environment is very useful because, comparing to the experiments with real robots, it allow the testing and evaluation of different types of interfaces and different working environments with diverse configurations. A very important facility of this interactive software environment is the fact that the designers of the robots sensors and interfaces are able to work in parallel to design test, optimize and realize different control devices for the robot","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"24 1","pages":"463-466 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85359531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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