Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558730
A. Dinescu, G. Conache, R. Gavrila
In order to decrease the dark current of a pn junction photodetector together with improving its photoelectric response, thinning of a silicon wafer can be achieved without losing its mechanical resistance by a special etching process performed on both sides of the wafer. Corrugated microstructures were obtained by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices and optical measurements were performed.
{"title":"Corrugated microstructures for silicon photodetectors","authors":"A. Dinescu, G. Conache, R. Gavrila","doi":"10.1109/SMICND.2005.1558730","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558730","url":null,"abstract":"In order to decrease the dark current of a pn junction photodetector together with improving its photoelectric response, thinning of a silicon wafer can be achieved without losing its mechanical resistance by a special etching process performed on both sides of the wafer. Corrugated microstructures were obtained by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices and optical measurements were performed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88693957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558759
D. Ulieru, A. Ciuciumis
The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.
{"title":"Laser patterning - innovative technology for mass production of microstructures","authors":"D. Ulieru, A. Ciuciumis","doi":"10.1109/SMICND.2005.1558759","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558759","url":null,"abstract":"The improvement of pattern resolution for microsystems fabrication is certainly a proven method for increasing of micro and nanostructure density. Our novel laser technology could be applied for thin metal or alloy films on polymer substrates, which could be structured directly with the laser direct patterning process. So is possible to manufacture ultrafine conductive or reflective structures down to 15 /spl mu/m in an economical and environmentally friendly way. Increasing demand on the accuracy of microsystems and sensors requires microstructures with lines and spaces down of approximately 5-100 /spl mu/m.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76137012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558779
E. Zasavitsky, V. Kantser, D. Meglei
Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025
{"title":"Thermoelectric power of p-doped PbTe semiconductor microwires with resonant states of thallium impurities","authors":"E. Zasavitsky, V. Kantser, D. Meglei","doi":"10.1109/SMICND.2005.1558779","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558779","url":null,"abstract":"Results of the measurements of thermoelectric properties of thin semiconductor microwires of Pb1-xTlxTe (x=0.001divide0.02, d=5-100 mum) in the temperature region 4.2divide300 K, which were obtained from solution melt by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium 0.0025<x<0.005 double change of the sign of thermoelectric power is observed. In pure samples and samples with thallium concentration more than 1 at.% thermoelectric power it is positive in the whole temperature range. Various mechanisms which can lead to observable anomalies, including Kondo-like behavior of a nonmagnetic degenerate two-level system are discussed. Obtained experimental results let suppose that the observed anomalies can be interpreted on the basis of model of an impurity with mixed valences","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81432491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558776
C. Miclea, L. Amarande, C. Tănăsoiu, I. Spanulescu, C. Miclea
Effect of Bi additives on the piezoelectric properties of PT ceramics having the formula (Pb1-3x/2Bix)(Ti0.98Mn0.02)O 3 with x=0.04, 0.06, 0.08 was investigated. The samples were prepared by conventional ceramic technique, using p.a. purity raw materials. The mixed powders were sintered at temperatures between 1050-1300degC. Poling was done in fields of about 70 kV/cm. Density and coupling factors of the samples were determined as a function of sintering temperatures, and doping level. Temperature dependence of the main piezoelectric characteristics was also investigated for temperatures as high as 500degC. A Curie point of 450degC, a low dielectric constant (<140) and a large electromechanical anisotropy (the radial mode is nearly inexistent, at room temperature and the thickness coupling factor is about 0.4) were found. These enhanced properties make such ceramics very attractive for high temperature and high frequency transducers applications
{"title":"Piezoelectric properties of bismuth modified lead titanate ceramics","authors":"C. Miclea, L. Amarande, C. Tănăsoiu, I. Spanulescu, C. Miclea","doi":"10.1109/SMICND.2005.1558776","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558776","url":null,"abstract":"Effect of Bi additives on the piezoelectric properties of PT ceramics having the formula (Pb1-3x/2Bix)(Ti0.98Mn0.02)O 3 with x=0.04, 0.06, 0.08 was investigated. The samples were prepared by conventional ceramic technique, using p.a. purity raw materials. The mixed powders were sintered at temperatures between 1050-1300degC. Poling was done in fields of about 70 kV/cm. Density and coupling factors of the samples were determined as a function of sintering temperatures, and doping level. Temperature dependence of the main piezoelectric characteristics was also investigated for temperatures as high as 500degC. A Curie point of 450degC, a low dielectric constant (<140) and a large electromechanical anisotropy (the radial mode is nearly inexistent, at room temperature and the thickness coupling factor is about 0.4) were found. These enhanced properties make such ceramics very attractive for high temperature and high frequency transducers applications","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91310143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558781
V. Kantser, Z. Dashevsky, D. Meglei, I. Bejenari
The electric field effect (EFE) in a coaxial cylindrical capacitor configuration was used to study the modification of transport and thermoelectric properties of semiconductor PbTe and Bi2Te3 glass coated microwires. The first results of experimental measurements of wire transport properties under EFE show the increasing or decreasing of the average Seebeck coefficient in dependence of gate potential polarity in accordance with the theoretical analysis
{"title":"Cylindrical thermoelectric microwires under radial electric field effect","authors":"V. Kantser, Z. Dashevsky, D. Meglei, I. Bejenari","doi":"10.1109/SMICND.2005.1558781","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558781","url":null,"abstract":"The electric field effect (EFE) in a coaxial cylindrical capacitor configuration was used to study the modification of transport and thermoelectric properties of semiconductor PbTe and Bi2Te3 glass coated microwires. The first results of experimental measurements of wire transport properties under EFE show the increasing or decreasing of the average Seebeck coefficient in dependence of gate potential polarity in accordance with the theoretical analysis","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88557232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558817
A. Ciuciumis, I. Cernica
The paper presents indium tin oxide and cerium dioxide thin films obtained by sol-gel method and deposited on the different wood substrates. Films deposition was performed by immersion of the substrates into coating solution and flow-coating process. Investigation of the surface chemistry and morphology of the wood substrates before and after deposition were obtained by means of atomic force microscopy and optical microscopy. The sol-gel deposit on the wood substrates lowered the rates of water and water vapour sorption (absorption and/or adsorption)
{"title":"Synthesis and characterization of indium tin oxide and cerium dioxide thin films by sol-gel method","authors":"A. Ciuciumis, I. Cernica","doi":"10.1109/SMICND.2005.1558817","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558817","url":null,"abstract":"The paper presents indium tin oxide and cerium dioxide thin films obtained by sol-gel method and deposited on the different wood substrates. Films deposition was performed by immersion of the substrates into coating solution and flow-coating process. Investigation of the surface chemistry and morphology of the wood substrates before and after deposition were obtained by means of atomic force microscopy and optical microscopy. The sol-gel deposit on the wood substrates lowered the rates of water and water vapour sorption (absorption and/or adsorption)","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89127374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558796
G. Brezeanu
As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included
{"title":"Silicon carbide (SiC): a short history. an analytical approach for SiC power device design","authors":"G. Brezeanu","doi":"10.1109/SMICND.2005.1558796","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558796","url":null,"abstract":"As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86485387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558829
O. Oltu, P. Milea, A. Simion
The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.
Xilinx和Altera为超大型新系列电路提供的最新FPGA测试技术基于测试芯片内部实现的逻辑分析仪。Xilintx的ChipScope和Altera的Signal Tap Logic analyzer允许仅使用JTAG接口在电路的所有内部节点中捕获和显示信号。本文介绍了作者利用ChipScope技术对飞机无线电导航标准定位系统的硬件模拟器进行验证和调试的经验。该系统在。基于Spartan 3(来自Xilinx)的FPGA开发板。
{"title":"Testing of digital circuitry using Xilinx chipscope logic analyzer","authors":"O. Oltu, P. Milea, A. Simion","doi":"10.1109/SMICND.2005.1558829","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558829","url":null,"abstract":"The latest technology, for FPGA testing provided by Xilinx and Altera for the new families of very large circuits is based on Logic Analysers implemented inside the tested chip. The ChipScope from Xilintx and the Signal Tap Logic Analyser from Altera allow to capture and display the signal in all internal nodes of the circuit usinzg the JTAG interface only. This paper presents the authors' experience in the use of ChipScope technology, for verification and debugging of a hardware simulator of the standard positioning system in aircraft radionavigation. The siystem was implemented in. the Spartan 3 (from Xilinx) based FPGA development board.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81268564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558722
R. Marcelli, S. Catoni, L. Frenguelli
In this paper a new approach to obtain low losses coplanar waveguide (CPW) lines is described. A photolithographic process is performed by using SU-S thick negative photo-resist on low resistivity silicon to obtain CPW lines elevated with respect to the substrate to get the advantages from transmission line structures which are almost on-the-air.
{"title":"Low loss coplanar lines on low resistivity silicon SU-S thick negative photoresist","authors":"R. Marcelli, S. Catoni, L. Frenguelli","doi":"10.1109/SMICND.2005.1558722","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558722","url":null,"abstract":"In this paper a new approach to obtain low losses coplanar waveguide (CPW) lines is described. A photolithographic process is performed by using SU-S thick negative photo-resist on low resistivity silicon to obtain CPW lines elevated with respect to the substrate to get the advantages from transmission line structures which are almost on-the-air.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90624654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-12-19DOI: 10.1109/SMICND.2005.1558752
C. Ravariu, A. Rusu, O. Nedelcu, F. Ravariu, F. Babarada, L. Dobrescu
The Silicon On Insulator technology has reached a new stage through the nanodevices way: Silicon On Nothing, where "Nothing" means a vacuum cavity underneath an ultrathin Si film. A mobile and thin semiconductor membrane results, by enlarging the cavity. In the empty space can be handled a bioliquid using a diffuser/nozzle micropump. The mobile Si membrane is bending by the substrate biasing and plays a double role: as actuator and detector. This paper presents a MEMS, based on a new work principle than traditional ISFETs, which detects the ionic analytes from a bioliquid and has its own actuator for the microfluidic handle.
{"title":"A MEMS dedicated to the bio-components detection, inspired from the SON architecture","authors":"C. Ravariu, A. Rusu, O. Nedelcu, F. Ravariu, F. Babarada, L. Dobrescu","doi":"10.1109/SMICND.2005.1558752","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558752","url":null,"abstract":"The Silicon On Insulator technology has reached a new stage through the nanodevices way: Silicon On Nothing, where \"Nothing\" means a vacuum cavity underneath an ultrathin Si film. A mobile and thin semiconductor membrane results, by enlarging the cavity. In the empty space can be handled a bioliquid using a diffuser/nozzle micropump. The mobile Si membrane is bending by the substrate biasing and plays a double role: as actuator and detector. This paper presents a MEMS, based on a new work principle than traditional ISFETs, which detects the ionic analytes from a bioliquid and has its own actuator for the microfluidic handle.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83978349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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