Pub Date : 2022-12-22DOI: 10.21122/2220-9506-2022-13-4-276-280
O. Zhevnyak, V. Borzdov, A. Borzdov, A. N. Petlitsky
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well as calculation of parasitic tunneling current and channel current in the conductive channel of flash memory element. Numerical simulation during the design stage of flash memory element allows working out guidelines for optimization of device parameters defining its performance and reliability.In the work such electrophysical parameters, characterizing electron transport, as mobility and average electron energy, as well as tunneling current and current in the channel of the flash memory element are studied via the numerical simulation by means of Monte Carlo method. Influence of phonon and ionized impurity scattering processes on electron mobility in the channel has been analyzed. It is shown that in the vicinity of drain region a sufficient decrease of electron mobility defined by phonon scattering processes occurs and the growth of parasitic tunneling current is observed which have a negative influence on device characteristics.The developed simulation program may be used in computer-aided design of flash memory elements for the purpose of their structure optimization and improvement of their electrical characteristics.
{"title":"Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters","authors":"O. Zhevnyak, V. Borzdov, A. Borzdov, A. N. Petlitsky","doi":"10.21122/2220-9506-2022-13-4-276-280","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-4-276-280","url":null,"abstract":"Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well as calculation of parasitic tunneling current and channel current in the conductive channel of flash memory element. Numerical simulation during the design stage of flash memory element allows working out guidelines for optimization of device parameters defining its performance and reliability.In the work such electrophysical parameters, characterizing electron transport, as mobility and average electron energy, as well as tunneling current and current in the channel of the flash memory element are studied via the numerical simulation by means of Monte Carlo method. Influence of phonon and ionized impurity scattering processes on electron mobility in the channel has been analyzed. It is shown that in the vicinity of drain region a sufficient decrease of electron mobility defined by phonon scattering processes occurs and the growth of parasitic tunneling current is observed which have a negative influence on device characteristics.The developed simulation program may be used in computer-aided design of flash memory elements for the purpose of their structure optimization and improvement of their electrical characteristics.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"68 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87806090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-22DOI: 10.21122/2220-9506-2022-13-4-302-313
A. V. Isaev, U. V. Suchodolov, D. V. Balakhonov
The highest quality and timely diagnostics of windings’ state of various types of electrical machines including of asynchronous motors’ windings is an impoitant task. Among the existing diagnostic methods currently the most promising are those ones based on methods for analyzing resonance processes occurring in electrical machines. The aim of the article was to assess the possibility of use resonant processes occurring in electrical machines for qualitative diagnostics of their windings state using the asynchronous motors example, to build mathematical models that allow describing defect formation in windings and to analyze the deviation of mathematical models relative to the results obtained.Analysis of the influence of the level of interturn resistances, the number of closed turns and the location of closed turns in sections on the phase-frequency characteristics of asynchronous motors windings of various classes has been carried out. Mathematical models of the phase-frequency characteristics are obtained, coefficients of polynomials are determined and the relative discrepancy between these mathematical dependences relative to the experimental data is estimated depending on the considered parameters characterizing defects in the coils’ windings of electrical machines.Obtained mathematical models and coefficients for them can serve as the basis for construction of automated control and diagnostic systems for checking of the windings state of electrical machines including assessing the residual life of their work.
{"title":"Assessment of Electrical Machines’ State Based on Mathematical Modeling of Defect Formation in Windings","authors":"A. V. Isaev, U. V. Suchodolov, D. V. Balakhonov","doi":"10.21122/2220-9506-2022-13-4-302-313","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-4-302-313","url":null,"abstract":"The highest quality and timely diagnostics of windings’ state of various types of electrical machines including of asynchronous motors’ windings is an impoitant task. Among the existing diagnostic methods currently the most promising are those ones based on methods for analyzing resonance processes occurring in electrical machines. The aim of the article was to assess the possibility of use resonant processes occurring in electrical machines for qualitative diagnostics of their windings state using the asynchronous motors example, to build mathematical models that allow describing defect formation in windings and to analyze the deviation of mathematical models relative to the results obtained.Analysis of the influence of the level of interturn resistances, the number of closed turns and the location of closed turns in sections on the phase-frequency characteristics of asynchronous motors windings of various classes has been carried out. Mathematical models of the phase-frequency characteristics are obtained, coefficients of polynomials are determined and the relative discrepancy between these mathematical dependences relative to the experimental data is estimated depending on the considered parameters characterizing defects in the coils’ windings of electrical machines.Obtained mathematical models and coefficients for them can serve as the basis for construction of automated control and diagnostic systems for checking of the windings state of electrical machines including assessing the residual life of their work.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"21 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91261478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.21122/2220-9506-2022-13-4-263-275
A. Baev, M. Asadchaya, A. Mayorov, O. Sergeeva, N. V. Delenkovsky
Improving the efficiency of ultrasonic control of hardened surface layers of metal products with a heterogeneous structure obtained using different technologies is a pressing problem of industrial production. The purpose of this work was to investigate the possibilities of measuring the depth of the surface inhomogeneous layer of steel objects on the basis of the use of amplitude and amplitude-angle characteristics of surface and subsurface transverse waves.The analysis of ultrasonic methods of control of physical and mechanical properties of metals by using surface and subsurface waves and experimentally investigated amplitude-angular characteristics of surface waves, the maximum angle of which increases by 3° at change of dimensionless layer depth hλ from zero to0.82. For the first time, the ratio of normalized amplitudes of surface waves taken at certain angles on theamplitude-angle characteristic curve obtained in the echo mode was proposed to be used as correlating parameters with the depth of the hardened layer. As a result of this research, the possibility of using a phased array transducers to solve the above problems.The effect of the hardened layer depth varying from zero to five in the working frequency range of 1.8– 10 MHz on the peculiarities of the refraction effect (including interference) and dependence of the subsurface wave amplitude on the acoustic base has been studied, making it possible to establish conditions that provide for the determination of the hardened layer depth.Circuit solutions have been offered in order to increase the efficiency of control of properties of the surface layers of metal articles on the basis of utilization of small-aperture transducers and ultrasonic reflectors making it possible to form fields of surface waves of different directional pattern.
{"title":"Possibilities of Using of Surface and Subsurface Waves’ Amplitude-Angle Characteristics for Control of Materials with Surface-Hardened Inhomogeneous Layer","authors":"A. Baev, M. Asadchaya, A. Mayorov, O. Sergeeva, N. V. Delenkovsky","doi":"10.21122/2220-9506-2022-13-4-263-275","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-4-263-275","url":null,"abstract":"Improving the efficiency of ultrasonic control of hardened surface layers of metal products with a heterogeneous structure obtained using different technologies is a pressing problem of industrial production. The purpose of this work was to investigate the possibilities of measuring the depth of the surface inhomogeneous layer of steel objects on the basis of the use of amplitude and amplitude-angle characteristics of surface and subsurface transverse waves.The analysis of ultrasonic methods of control of physical and mechanical properties of metals by using surface and subsurface waves and experimentally investigated amplitude-angular characteristics of surface waves, the maximum angle of which increases by 3° at change of dimensionless layer depth hλ from zero to0.82. For the first time, the ratio of normalized amplitudes of surface waves taken at certain angles on theamplitude-angle characteristic curve obtained in the echo mode was proposed to be used as correlating parameters with the depth of the hardened layer. As a result of this research, the possibility of using a phased array transducers to solve the above problems.The effect of the hardened layer depth varying from zero to five in the working frequency range of 1.8– 10 MHz on the peculiarities of the refraction effect (including interference) and dependence of the subsurface wave amplitude on the acoustic base has been studied, making it possible to establish conditions that provide for the determination of the hardened layer depth.Circuit solutions have been offered in order to increase the efficiency of control of properties of the surface layers of metal articles on the basis of utilization of small-aperture transducers and ultrasonic reflectors making it possible to form fields of surface waves of different directional pattern. ","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"41 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77612702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.21122/2220-9506-2022-13-4-247-255
N. Poklonski, I. I. Anikeev, S. A. Vyrko
The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance "insulator-undoped silicon-insulator" at different applied to the capacitor direct current (DC) voltages, measuring signal frequencies and temperatures.A model of such the capacitor is proposed, in which 30 µm thick layer of undoped (intrinsic) crystalline silicon (i-Si) is separated from each of the capacitor electrodes by 1 µm thick insulator layer (silicon dioxide).The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and 400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically, while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300 and 400 K.
{"title":"High-Frequency Capacitor with Working Substance \"Insulator-Undoped Silicon-Insulator\"","authors":"N. Poklonski, I. I. Anikeev, S. A. Vyrko","doi":"10.21122/2220-9506-2022-13-4-247-255","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-4-247-255","url":null,"abstract":"The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance \"insulator-undoped silicon-insulator\" at different applied to the capacitor direct current (DC) voltages, measuring signal frequencies and temperatures.A model of such the capacitor is proposed, in which 30 µm thick layer of undoped (intrinsic) crystalline silicon (i-Si) is separated from each of the capacitor electrodes by 1 µm thick insulator layer (silicon dioxide).The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and 400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically, while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300 and 400 K.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"20 4 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77036438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.21122/2220-9506-2022-13-4-256-262
M. A. Knyazev
The opened systems possess an increasing significance and possibilities of applying in designing of measuring devices. Now an essentially nonlinear models are used for such systems. The perturbation approach is not enough for these purposes. Models of new types have solutions in a form of soliton or kink and similar objects. The equation of Fisher–Kolmogorov–Petrovskii–Piskunov is one of such equations. This equation is used for description of convection-reaction-diffusion processes. Such processes are used for studying of a self-organisation and formation of a structure in non-equilibrium opened systems. The aim of this work was to construct of a new solution for the modified equation of Fisher–Kolmogorov– Petrovskii–Piskunov in which a space inhomogeneity is accounted.To solve this problem the direct Hirota method for nonlinear partial differential equation is applied.Some modifications into this method were introduced.The new topologically non-trivial solution of the modified Fisher–Kolmogorov–Petrovskii–Piskunov equation is constructed explicitly. This solution has a kink-like form. Some arguments on the stability of such solution are considered.A possibility of domain structure formation in the systems which describe by the Fisher–Kolmogorov– Petrovskii–Piskunov equation is demonstrated.
{"title":"Domain Structure Formation in Designing of the Opened Informative Measuring Systems","authors":"M. A. Knyazev","doi":"10.21122/2220-9506-2022-13-4-256-262","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-4-256-262","url":null,"abstract":"The opened systems possess an increasing significance and possibilities of applying in designing of measuring devices. Now an essentially nonlinear models are used for such systems. The perturbation approach is not enough for these purposes. Models of new types have solutions in a form of soliton or kink and similar objects. The equation of Fisher–Kolmogorov–Petrovskii–Piskunov is one of such equations. This equation is used for description of convection-reaction-diffusion processes. Such processes are used for studying of a self-organisation and formation of a structure in non-equilibrium opened systems. The aim of this work was to construct of a new solution for the modified equation of Fisher–Kolmogorov– Petrovskii–Piskunov in which a space inhomogeneity is accounted.To solve this problem the direct Hirota method for nonlinear partial differential equation is applied.Some modifications into this method were introduced.The new topologically non-trivial solution of the modified Fisher–Kolmogorov–Petrovskii–Piskunov equation is constructed explicitly. This solution has a kink-like form. Some arguments on the stability of such solution are considered.A possibility of domain structure formation in the systems which describe by the Fisher–Kolmogorov– Petrovskii–Piskunov equation is demonstrated. ","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"65 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90174121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-24DOI: 10.21122/2220-9506-2022-13-3-199-207
V. Solodukha, U. A. Pilipenko, A. Omelchenko, D. V. Shestovski
One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is investigation of influence of the rapid thermal treatment of the initial silicon wafers of the various doping level and reticular density on their optical characteristics by means of the spectral ellipsometry method.The investigation results are presented by means of the spectral ellipsometry method of the rapid thermal processing influence on the initial silicon wafers (KDB12 orientation <100>, KDB10 orientation <111> and KDB0.005 orientation <100>) of the various level of doping and reticular density influence on their optical characteristics: refraction and absorption ratios. Influence was confirmed of the silicon reticular density on its optical characteristics before and after the rapid thermal processing. It was shown, that reduction of the refraction and absorption ratios in the center of the Brillouin zone for the silicon samples with the high Boron concentration after the rapid thermal processing as compared with the low doped silicon. In the area of the maximum absorption peak, corresponding to the energy of the electron exit from the silicon surface (4.34 eV) the refraction indicator of the high doped silicon becomes higher, than of the low doped silicon, which is determined by the high concentration of the vacant charge carriers on the silicon surface in this spectral range.It was established, that the spectral area 3.59–4.67 eV, corresponding to the work of the electrons, exiting the silicon surface, the most informative way shows the difference of the 3 optical parameters of silicon of the different orientation, and for evaluation of influence of the silicon doping level on its optical characteristics the most informative is the spectral range of 3.32–4.34 eV.
{"title":"Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics","authors":"V. Solodukha, U. A. Pilipenko, A. Omelchenko, D. V. Shestovski","doi":"10.21122/2220-9506-2022-13-3-199-207","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-3-199-207","url":null,"abstract":"One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is investigation of influence of the rapid thermal treatment of the initial silicon wafers of the various doping level and reticular density on their optical characteristics by means of the spectral ellipsometry method.The investigation results are presented by means of the spectral ellipsometry method of the rapid thermal processing influence on the initial silicon wafers (KDB12 orientation <100>, KDB10 orientation <111> and KDB0.005 orientation <100>) of the various level of doping and reticular density influence on their optical characteristics: refraction and absorption ratios. Influence was confirmed of the silicon reticular density on its optical characteristics before and after the rapid thermal processing. It was shown, that reduction of the refraction and absorption ratios in the center of the Brillouin zone for the silicon samples with the high Boron concentration after the rapid thermal processing as compared with the low doped silicon. In the area of the maximum absorption peak, corresponding to the energy of the electron exit from the silicon surface (4.34 eV) the refraction indicator of the high doped silicon becomes higher, than of the low doped silicon, which is determined by the high concentration of the vacant charge carriers on the silicon surface in this spectral range.It was established, that the spectral area 3.59–4.67 eV, corresponding to the work of the electrons, exiting the silicon surface, the most informative way shows the difference of the 3 optical parameters of silicon of the different orientation, and for evaluation of influence of the silicon doping level on its optical characteristics the most informative is the spectral range of 3.32–4.34 eV. ","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"69 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81740003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-24DOI: 10.21122/2220-9506-2022-13-3-228-236
V. Busko, A. Kren, G. A. Lanzman
The manufacture of products using additive technologies is accompanied by the unpredictable appearance of inhomogeneity of properties, anisotropy, residual stresses, porosity, and other defects. Therefore, there is a great relevance of non-destructive quality control of products obtained by additive technologies. The purpose of the paper is the experimental investigation of the possibility of testing and evaluation of the quality of heat treatment of three-dimensional and cast samples by non-destructive control methods.The low-alloy steel 09G2S samples, which was obtained by casting and selective laser sintering different modes of subsequent heat treatments were studied. The method of the Barkhausen effect and the instrumented indentation method for measuring the material hardness were applied.It was experimentally established that both methods are highly sensitive to annealed and normalized three-dimensional samples and their rejection. Compared to the hardness measurement method, which is mainly associated with phase-structural changes, the magnetic noise method due to selectivity to other controlled parameters is additionally sensitive to cast samples (at the same time the microstructures of cast and normalized three-dimensional samples are close to each other according to X-ray data).The magnetic noise method can be used as one of the physical methods for evaluation the quality and control of the heat treatment of 3D samples at the manufacturing stage when testing their types and modes, as well as sorting samples.
{"title":"Non-Destructive Testing by Magnetic Noise Method of the Quality of Heat Treatment of Steel Samples Obtained by Additive Technology","authors":"V. Busko, A. Kren, G. A. Lanzman","doi":"10.21122/2220-9506-2022-13-3-228-236","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-3-228-236","url":null,"abstract":"The manufacture of products using additive technologies is accompanied by the unpredictable appearance of inhomogeneity of properties, anisotropy, residual stresses, porosity, and other defects. Therefore, there is a great relevance of non-destructive quality control of products obtained by additive technologies. The purpose of the paper is the experimental investigation of the possibility of testing and evaluation of the quality of heat treatment of three-dimensional and cast samples by non-destructive control methods.The low-alloy steel 09G2S samples, which was obtained by casting and selective laser sintering different modes of subsequent heat treatments were studied. The method of the Barkhausen effect and the instrumented indentation method for measuring the material hardness were applied.It was experimentally established that both methods are highly sensitive to annealed and normalized three-dimensional samples and their rejection. Compared to the hardness measurement method, which is mainly associated with phase-structural changes, the magnetic noise method due to selectivity to other controlled parameters is additionally sensitive to cast samples (at the same time the microstructures of cast and normalized three-dimensional samples are close to each other according to X-ray data).The magnetic noise method can be used as one of the physical methods for evaluation the quality and control of the heat treatment of 3D samples at the manufacturing stage when testing their types and modes, as well as sorting samples. ","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"187 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72437439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-24DOI: 10.21122/2220-9506-2022-13-3-172-179
V. Е. Evchik, A. Spiridonov, Dmitrii Ushakov, V. Baranova, I. A. Shalatonin, V. Saechnikov
AbstractThe work purpose is the development of BSUIM-1 and BSUIM-2 complexes for training specialists in the aerospace industry with the used engineering test beds and experimental facilities.Two sets of nanosatellite engineering models and ground stations had developed. They allow testing hardware and software of the onboard equipment and payload, simulating operation modes, and flight programs, and enable students to gain practical skills in working with ultra-small satellites. The complexes include ground stations, 2 ultra-small satellite simulators, BSUSAT-1 low-orbit nanosatellite, remote access laboratory, local and external servers for data storage. The complexes' website and database allow for full-time and remote training. The experience gained in conducting experiments, processing telemetry, and structuring information in the database is used for further development. All the developed equipment is made based on commercial off-the-shelf elements. It has reduced development costs, flexible equipment reconfiguration, and easier access to the simulator's internal architecture for demonstration purposes.The developed complexes allow students to practically study the ultra-small satellite components design and ground stations, methods for receiving and processing telemetry and scientific information, attitude determination and control algorithms. The complexes allow to conduct of research in the development of individual onboard systems and special-purpose equipment of the nanosatellite and their testing in the loop. The results obtained are introduced into the educational process and are used in lectures and laboratory classes for aerospace specialties students. The developed complexes make it possible to carry out term papers, theses, and master’s works related to the design of hardware and software for nanosatellites and a ground station, the setting up of space experiments, the development of new algorithms and a flight program for ultra-small satellites.
{"title":"Development of Engineering Models of Nanosatellites for Student Training","authors":"V. Е. Evchik, A. Spiridonov, Dmitrii Ushakov, V. Baranova, I. A. Shalatonin, V. Saechnikov","doi":"10.21122/2220-9506-2022-13-3-172-179","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-3-172-179","url":null,"abstract":"AbstractThe work purpose is the development of BSUIM-1 and BSUIM-2 complexes for training specialists in the aerospace industry with the used engineering test beds and experimental facilities.Two sets of nanosatellite engineering models and ground stations had developed. They allow testing hardware and software of the onboard equipment and payload, simulating operation modes, and flight programs, and enable students to gain practical skills in working with ultra-small satellites. The complexes include ground stations, 2 ultra-small satellite simulators, BSUSAT-1 low-orbit nanosatellite, remote access laboratory, local and external servers for data storage. The complexes' website and database allow for full-time and remote training. The experience gained in conducting experiments, processing telemetry, and structuring information in the database is used for further development. All the developed equipment is made based on commercial off-the-shelf elements. It has reduced development costs, flexible equipment reconfiguration, and easier access to the simulator's internal architecture for demonstration purposes.The developed complexes allow students to practically study the ultra-small satellite components design and ground stations, methods for receiving and processing telemetry and scientific information, attitude determination and control algorithms. The complexes allow to conduct of research in the development of individual onboard systems and special-purpose equipment of the nanosatellite and their testing in the loop. The results obtained are introduced into the educational process and are used in lectures and laboratory classes for aerospace specialties students. The developed complexes make it possible to carry out term papers, theses, and master’s works related to the design of hardware and software for nanosatellites and a ground station, the setting up of space experiments, the development of new algorithms and a flight program for ultra-small satellites.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80748592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-24DOI: 10.21122/2220-9506-2022-13-3-189-198
S. G. Sandomirski, A. L. Val’ko, S. P. Rudenko
The exact determination of Vickers HV hardness is important for determining of the product material mechanical properties. An important aspect of measuring HV is to obtain its values on a non-planar surface. Regulatory documents contain table values of correction factors K which depend on the surface shape (convex or concave, spherical or cylindrical), its curvature (diameter D) and hardness (arithmetic mean d of indentation diagonal lengths) but this does not solved the problem. The K values for d/D ratios not given in the tables are determined by interpolation from the closest to the measured tabulated d/D values. The error in the representation of these tabulated d/D values is fully included in the error of determining the K coefficient for the measured d/D ratio. The aim of the work was to simplify the calculation of correction factors K for Vickers hardness measurements on non-planar surfaces and to reduce the calculation error compared to the methodology governed by the regulations.The method presented is based on a statistical analysis of K coefficients, presented in regulatory documents for cases considered in the form of tables. The sufficiency of using of a quadratic power function for approximating K(d/D) dependences and the necessity of fulfilling the physically justified condition K ≡ 1 at zero curvature of tested surface have been substantiated. Simplification of calculation of K coefficient and decrease of calculation error in comparison with the recommended in the regulatory documents obtaining of K value by linear interpolation relative to two adjacent table values are shown.The reduction of the calculation error in comparison with the calculation recommended in the regulatory documents occurred because of the reason that when calculating by the developed formulas, the error in the value of the calculated for a specific value of d/D coefficient K is averaged over all n values of d/D given in the table of GOST for a given surface. That is, the error is reduced by a factor of about √n 2 in comparison with the calculation according to the regulated procedure. This is illustrated by the above numerical data and an example of the use of the method.The obtained formulas for calculation of correction coefficients K when measuring hardness HV on spherical and cylindrical (concave and convex) surfaces are reasonable to use for automatic calculation of HV on items with a non-planar surface.
{"title":"Calculation of Correction Factors for Vickers’ Hardness Measurements on a Non-Planar Surface","authors":"S. G. Sandomirski, A. L. Val’ko, S. P. Rudenko","doi":"10.21122/2220-9506-2022-13-3-189-198","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-3-189-198","url":null,"abstract":"The exact determination of Vickers HV hardness is important for determining of the product material mechanical properties. An important aspect of measuring HV is to obtain its values on a non-planar surface. Regulatory documents contain table values of correction factors K which depend on the surface shape (convex or concave, spherical or cylindrical), its curvature (diameter D) and hardness (arithmetic mean d of indentation diagonal lengths) but this does not solved the problem. The K values for d/D ratios not given in the tables are determined by interpolation from the closest to the measured tabulated d/D values. The error in the representation of these tabulated d/D values is fully included in the error of determining the K coefficient for the measured d/D ratio. The aim of the work was to simplify the calculation of correction factors K for Vickers hardness measurements on non-planar surfaces and to reduce the calculation error compared to the methodology governed by the regulations.The method presented is based on a statistical analysis of K coefficients, presented in regulatory documents for cases considered in the form of tables. The sufficiency of using of a quadratic power function for approximating K(d/D) dependences and the necessity of fulfilling the physically justified condition K ≡ 1 at zero curvature of tested surface have been substantiated. Simplification of calculation of K coefficient and decrease of calculation error in comparison with the recommended in the regulatory documents obtaining of K value by linear interpolation relative to two adjacent table values are shown.The reduction of the calculation error in comparison with the calculation recommended in the regulatory documents occurred because of the reason that when calculating by the developed formulas, the error in the value of the calculated for a specific value of d/D coefficient K is averaged over all n values of d/D given in the table of GOST for a given surface. That is, the error is reduced by a factor of about √n 2 in comparison with the calculation according to the regulated procedure. This is illustrated by the above numerical data and an example of the use of the method.The obtained formulas for calculation of correction coefficients K when measuring hardness HV on spherical and cylindrical (concave and convex) surfaces are reasonable to use for automatic calculation of HV on items with a non-planar surface.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"13 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76304354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-24DOI: 10.21122/2220-9506-2022-13-3-208-215
V. Romanchak, P. Serenkov
This work considers a model for measuring non-additive quantities, in particular a model for subjective measurement. The purpose of this work was to develop the measurement theory and form of a measurement model that uses the corrected S. Stevens measurement model.A generalized structure was considered that included an empirical system, a mathematical system, and a homomorphism of the empirical system into a numerical system. The main shortcomings of classical measurement theories seem to be: 1) homomorphism does not display operations (in this case, one cannot speak of the meaningfulness of the model); and 2) there is no empirical measurement model that could confirm the existence of a homomorphism. To overcome the shortcomings of existing theories a definition of the measurement equation is given. As a result a measurement model is obtained that is free from the shortcomings of classical measurement theories. The model uses the corrected model of S. Stevens and the reflection principle of J. Barzilai.The measurement model was tested using laws that were obtained empirically. Using the model it is shown that Fechnerʼs empirical law is equivalent to Stevensʼs empirical law. This means that the problem which has attracted attention of many researchers for almost a century, has been solved.A numerical example demonstrates the possibilities of the proposed measurement model. It is shown that the model can be used for extended analysis of expert assessments.
{"title":"Non-Additive Quantity Measurement Model","authors":"V. Romanchak, P. Serenkov","doi":"10.21122/2220-9506-2022-13-3-208-215","DOIUrl":"https://doi.org/10.21122/2220-9506-2022-13-3-208-215","url":null,"abstract":"This work considers a model for measuring non-additive quantities, in particular a model for subjective measurement. The purpose of this work was to develop the measurement theory and form of a measurement model that uses the corrected S. Stevens measurement model.A generalized structure was considered that included an empirical system, a mathematical system, and a homomorphism of the empirical system into a numerical system. The main shortcomings of classical measurement theories seem to be: 1) homomorphism does not display operations (in this case, one cannot speak of the meaningfulness of the model); and 2) there is no empirical measurement model that could confirm the existence of a homomorphism. To overcome the shortcomings of existing theories a definition of the measurement equation is given. As a result a measurement model is obtained that is free from the shortcomings of classical measurement theories. The model uses the corrected model of S. Stevens and the reflection principle of J. Barzilai.The measurement model was tested using laws that were obtained empirically. Using the model it is shown that Fechnerʼs empirical law is equivalent to Stevensʼs empirical law. This means that the problem which has attracted attention of many researchers for almost a century, has been solved.A numerical example demonstrates the possibilities of the proposed measurement model. It is shown that the model can be used for extended analysis of expert assessments.","PeriodicalId":41798,"journal":{"name":"Devices and Methods of Measurements","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83119855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：