Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377945
J. Hashiba, T. Kawajiri, Ryota Shibuya, H. Ishikuro
This paper presents the influence of metal sheet near the coils of inductively coupled wireless power delivery system. Experiments and electro-magnetic field simulation shows the influence of various kind of metal sheets and sheet positions on the power efficiency and peak frequency shift. The tradeoff between the power efficiency and shielding ability is also discussed.
{"title":"Shield effects of metal plate and mesh in wireless power delivery system","authors":"J. Hashiba, T. Kawajiri, Ryota Shibuya, H. Ishikuro","doi":"10.1109/RFIT.2015.7377945","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377945","url":null,"abstract":"This paper presents the influence of metal sheet near the coils of inductively coupled wireless power delivery system. Experiments and electro-magnetic field simulation shows the influence of various kind of metal sheets and sheet positions on the power efficiency and peak frequency shift. The tradeoff between the power efficiency and shielding ability is also discussed.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121177447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377929
Jungnam Bae, Saichandrateja Radhapuram, Ikkyun Jo, T. Kihara, T. Matsuoka
A low-voltage digitally-controlled oscillator (DCO) utilized in a medical implant communication service (MICS) frequency band is designed. A DCO core operating in sub-threshold region is designed based on the gm/ID methodology for optimization. The oscillation frequency is tuned by digital logic block. Thermometer coder with data-weighted averaging and delta-sigma modulator (DSM) are implemented for frequency tuning. High frequency resolution is achieved by using the DSM. The DCO fabricated in a 130-nm CMOS technology has achieved a phase noise of -115.3 dBc/Hz at 200 kHz offset frequency with tuning range of 382 MHz to 412 MHz for the MICS band. It consumes 840 μW from a 0.7-V supply voltage and has a high frequency resolution of 18 kHz.
{"title":"A low-voltage design of digitally-controlled oscillator based on the gm/ID methodology","authors":"Jungnam Bae, Saichandrateja Radhapuram, Ikkyun Jo, T. Kihara, T. Matsuoka","doi":"10.1109/RFIT.2015.7377929","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377929","url":null,"abstract":"A low-voltage digitally-controlled oscillator (DCO) utilized in a medical implant communication service (MICS) frequency band is designed. A DCO core operating in sub-threshold region is designed based on the gm/ID methodology for optimization. The oscillation frequency is tuned by digital logic block. Thermometer coder with data-weighted averaging and delta-sigma modulator (DSM) are implemented for frequency tuning. High frequency resolution is achieved by using the DSM. The DCO fabricated in a 130-nm CMOS technology has achieved a phase noise of -115.3 dBc/Hz at 200 kHz offset frequency with tuning range of 382 MHz to 412 MHz for the MICS band. It consumes 840 μW from a 0.7-V supply voltage and has a high frequency resolution of 18 kHz.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117154615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377944
S. Yoshida, N. Hasegawa, Y. Kobayashi, A. Miyachi, H. Sakaki, K. Nishikawa, Y. Moriguchi, S. Furuta, C. Maekawa, I. Urushibara, S. Kawasaki
This paper demonstrates experimental evaluation results of a wireless sensor network system inside a reusable rocket for health monitoring system. The wireless sensor node is powered by microwave power transmission (MPT) to realize completely wireless, battery-less system. Both the MPT and wireless communication use same frequency, 5.8 GHz. Time division operation is utilized for the coexistence. Rectifier output DC power, received signal strength indicator (RSSI) and packet error rate (PER) is measured using the reusable vehicle test (RVT) to evaluate the feasibility of the coexistence.
{"title":"Wireless sensor network system with wireless powering by time division operation at 5.8 GHz in a reusable rocket","authors":"S. Yoshida, N. Hasegawa, Y. Kobayashi, A. Miyachi, H. Sakaki, K. Nishikawa, Y. Moriguchi, S. Furuta, C. Maekawa, I. Urushibara, S. Kawasaki","doi":"10.1109/RFIT.2015.7377944","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377944","url":null,"abstract":"This paper demonstrates experimental evaluation results of a wireless sensor network system inside a reusable rocket for health monitoring system. The wireless sensor node is powered by microwave power transmission (MPT) to realize completely wireless, battery-less system. Both the MPT and wireless communication use same frequency, 5.8 GHz. Time division operation is utilized for the coexistence. Rectifier output DC power, received signal strength indicator (RSSI) and packet error rate (PER) is measured using the reusable vehicle test (RVT) to evaluate the feasibility of the coexistence.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117343348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377878
Wei-min Wu, Ming-Che Yu, Chun-Hsing Li, C. Kuo
This paper presents a low-cost and broadband bondwire interconnect for chip-to-chip and chip-to-carrier communications. Four transmission lines and three signal bondwires form a three-path interconnect structure which can greatly reduce the bondwire effect. Ground bondwires are also carefully deployed to have good ground connection between chips or chip and carrier. An interconnect from a 0.18-μm CMOS chip to a Glass-Integrated-Passive-Device (GIPD) carrier is designed to verify the idea. Measured results of three samples show that the insertion loss and return loss can be better than 3 dB and 11.2 dB from DC up to 92 GHz.
{"title":"A low-cost DC-to-92 GHz broadband three-path bondwire interconnect","authors":"Wei-min Wu, Ming-Che Yu, Chun-Hsing Li, C. Kuo","doi":"10.1109/RFIT.2015.7377878","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377878","url":null,"abstract":"This paper presents a low-cost and broadband bondwire interconnect for chip-to-chip and chip-to-carrier communications. Four transmission lines and three signal bondwires form a three-path interconnect structure which can greatly reduce the bondwire effect. Ground bondwires are also carefully deployed to have good ground connection between chips or chip and carrier. An interconnect from a 0.18-μm CMOS chip to a Glass-Integrated-Passive-Device (GIPD) carrier is designed to verify the idea. Measured results of three samples show that the insertion loss and return loss can be better than 3 dB and 11.2 dB from DC up to 92 GHz.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377921
A. Gadallah, A. Allam, H. Mosalam, A. Abdel-Rahman, H. Jia, R. Pokharel
The design of 3-7 GHz class AB two stages power amplifier (PA) for wireless body area network (WBAN) applications in TSMC 0.18 μm is presented. Source and Load-pull contours are employed in order to maximize power added efficiency. The post-layout simulation results of the proposed UWB-PA indicated that the power gain (S21) is 12 dB ± 0.8; the input return loss (S11) and the output return loss (S22) are less than -10 dB and -11 dB respectively over the frequency range from 3 GHz to 7 GHz. In addition, The PA achieved maximum power added efficiency (PAE) of 38.5% at 5 GHz and an output 1-dB compression of 7.21 dBm at the same frequency. Moreover, a group delay variation of ± 32.5 ps was achieved through the frequency band of interest.
{"title":"A high efficiency 3–7 GHz class AB CMOS power amplifier for WBAN applications","authors":"A. Gadallah, A. Allam, H. Mosalam, A. Abdel-Rahman, H. Jia, R. Pokharel","doi":"10.1109/RFIT.2015.7377921","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377921","url":null,"abstract":"The design of 3-7 GHz class AB two stages power amplifier (PA) for wireless body area network (WBAN) applications in TSMC 0.18 μm is presented. Source and Load-pull contours are employed in order to maximize power added efficiency. The post-layout simulation results of the proposed UWB-PA indicated that the power gain (S21) is 12 dB ± 0.8; the input return loss (S11) and the output return loss (S22) are less than -10 dB and -11 dB respectively over the frequency range from 3 GHz to 7 GHz. In addition, The PA achieved maximum power added efficiency (PAE) of 38.5% at 5 GHz and an output 1-dB compression of 7.21 dBm at the same frequency. Moreover, a group delay variation of ± 32.5 ps was achieved through the frequency band of interest.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125101238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377882
Yasuhiro Take, J. Kadomoto, T. Kuroda
This paper describes a wireless inter-chip link using inductive coupling, namely ThruChip Interface (TCI) and a low-skew 3D clock distribution network using coupled resonator. Applying a TCI and a coupled resonator make it possible to integrate chips three dimensionally by applying conventional CMOS technology without new additional processing. Although the additional cost of a TCI is much lower than that of a through-silicon via (TSV), speed, power, reliability, and testability are not compromised.
{"title":"3D integration using inductive coupling and coupled resonator (Invited)","authors":"Yasuhiro Take, J. Kadomoto, T. Kuroda","doi":"10.1109/RFIT.2015.7377882","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377882","url":null,"abstract":"This paper describes a wireless inter-chip link using inductive coupling, namely ThruChip Interface (TCI) and a low-skew 3D clock distribution network using coupled resonator. Applying a TCI and a coupled resonator make it possible to integrate chips three dimensionally by applying conventional CMOS technology without new additional processing. Although the additional cost of a TCI is much lower than that of a through-silicon via (TSV), speed, power, reliability, and testability are not compromised.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131360777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377913
M. Je, J. Cheong, C. Ho, Simon Sheung Yan Ng, Rui-Feng Xue, Hyouk-Kyu Cha, Xin Liu, W. Park, L. Lim, Cairan He, Kuang-Wei Cheng, X. Zou, Zhiming Chen, Lei Yao, San-Jeow Cheng, Peng Li, Lei Liu, Ming-Yuan Cheng, Z. Duan, R. Rajkumar, Yuanjin Zheng, W. Goh, Yongxin Guo, G. Dawe
In this paper, two examples of wireless sensor microsystems for medical devices are presented: a wireless blood flow monitoring microsystem which is fully integrated with a prosthetic vascular graft for early failure detection, and a 100-channel wireless neural recording microsystem In the context of such biomedical applications, high-efficiency wireless transceiver circuit techniques for data communication and power transfer as well as low-power sensor interface circuit techniques are introduced and explained.
{"title":"Wireless sensor microsystems for emerging biomedical applications (Invited)","authors":"M. Je, J. Cheong, C. Ho, Simon Sheung Yan Ng, Rui-Feng Xue, Hyouk-Kyu Cha, Xin Liu, W. Park, L. Lim, Cairan He, Kuang-Wei Cheng, X. Zou, Zhiming Chen, Lei Yao, San-Jeow Cheng, Peng Li, Lei Liu, Ming-Yuan Cheng, Z. Duan, R. Rajkumar, Yuanjin Zheng, W. Goh, Yongxin Guo, G. Dawe","doi":"10.1109/RFIT.2015.7377913","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377913","url":null,"abstract":"In this paper, two examples of wireless sensor microsystems for medical devices are presented: a wireless blood flow monitoring microsystem which is fully integrated with a prosthetic vascular graft for early failure detection, and a 100-channel wireless neural recording microsystem In the context of such biomedical applications, high-efficiency wireless transceiver circuit techniques for data communication and power transfer as well as low-power sensor interface circuit techniques are introduced and explained.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128902228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377871
Y. Hayashi, Koichi Yahagi, Hisayasu Sato, Koichi Sato, Masamichi Muratani
IoT applications such as healthcare monitoring systems, need a lot of wireless terminal solutions with low power consumption. The key is how to use the RF terminal solutions easily for general purpose users. To compromise these user requirements, a new adaptable RF MCU of Bluetooth® Smart has been developed as our top-line products Using the leading-edge 40nm-process technology with a sliding intermediate frequency architecture are realized the lowest transmission peak-current in the RF-AFE and the small number of peripheral passive components The product concept of the "Easy-to-Use, RF MCU" enlightens the pass way to smart IoT society.
{"title":"\"Easy-to-use\" RF-solutions for IoT applications","authors":"Y. Hayashi, Koichi Yahagi, Hisayasu Sato, Koichi Sato, Masamichi Muratani","doi":"10.1109/RFIT.2015.7377871","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377871","url":null,"abstract":"IoT applications such as healthcare monitoring systems, need a lot of wireless terminal solutions with low power consumption. The key is how to use the RF terminal solutions easily for general purpose users. To compromise these user requirements, a new adaptable RF MCU of Bluetooth® Smart has been developed as our top-line products Using the leading-edge 40nm-process technology with a sliding intermediate frequency architecture are realized the lowest transmission peak-current in the RF-AFE and the small number of peripheral passive components The product concept of the \"Easy-to-Use, RF MCU\" enlightens the pass way to smart IoT society.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129874760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377932
Y. Yamaguchi, M. Hangai, K. Yamanaka, Y. Homma
In this paper, GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission (MWPT) is presented. The effects of harmonic of 0.7μm and 0.25μm gate length GaN HEMTs were measured by harmonic load-pull measurement. In the measurement, it was revealed that the 0.25μm gate device included higher harmonics than 0.7μm gate device. It is because cuf-off frequency of 0.25μm gate device is higher than 0.7μm gate device. 0.25μm short gate length GaN HEMT which has 25GHz high cut-off frequency was used for amplifier. The matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 75% was successfully obtained with 7W output power at 5.8GHz.
{"title":"GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission","authors":"Y. Yamaguchi, M. Hangai, K. Yamanaka, Y. Homma","doi":"10.1109/RFIT.2015.7377932","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377932","url":null,"abstract":"In this paper, GaN HEMT high efficiency amplifier for Microwave Wireless Power Transmission (MWPT) is presented. The effects of harmonic of 0.7μm and 0.25μm gate length GaN HEMTs were measured by harmonic load-pull measurement. In the measurement, it was revealed that the 0.25μm gate device included higher harmonics than 0.7μm gate device. It is because cuf-off frequency of 0.25μm gate device is higher than 0.7μm gate device. 0.25μm short gate length GaN HEMT which has 25GHz high cut-off frequency was used for amplifier. The matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 75% was successfully obtained with 7W output power at 5.8GHz.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131062736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/RFIT.2015.7377939
A. Tsuchiya, H. Onodera
Operating frequency of integrated circuits is going toward terahertz region. In such high frequency region, device modeling is a crucial issue. This paper focuses a phenomenon called anomalous skin effect. Due to skin effect, current in metal wire concentrates toward metal surface as the frequency becomes higher. Near terahertz region, the skin depth becomes around 100 nm and less. When the skin depth becomes comparable to the mean free path of electron in metal, surface scattering becomes significant. We investigate the anomalous skin effect on on-chip metal wires and show the impact on the wire characterization.
{"title":"Impact of anomalous skin effect on metal wire for terahertz integrated circuit","authors":"A. Tsuchiya, H. Onodera","doi":"10.1109/RFIT.2015.7377939","DOIUrl":"https://doi.org/10.1109/RFIT.2015.7377939","url":null,"abstract":"Operating frequency of integrated circuits is going toward terahertz region. In such high frequency region, device modeling is a crucial issue. This paper focuses a phenomenon called anomalous skin effect. Due to skin effect, current in metal wire concentrates toward metal surface as the frequency becomes higher. Near terahertz region, the skin depth becomes around 100 nm and less. When the skin depth becomes comparable to the mean free path of electron in metal, surface scattering becomes significant. We investigate the anomalous skin effect on on-chip metal wires and show the impact on the wire characterization.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116495066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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