Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337348
M. Fuchs
An extremely low cost and very compact synthesizer - stabilized VCO for automatic toll debiting systems was developed. The RF section of the oscillator consists of a 1450MHz - VCO, a 20dBm buffer amplifier and a frequency quadrupler. This quadrupler is the core part of the system. He consists of a class - C biased bipolar transistor. All matching networks of the RF modules consist of standard SMD components. The complete circuit, therefore, has smaller dimensions.
{"title":"A Very Low Cost and Small Sized 5.8GHz Synthesized Signal Source on PCB for Automatic Toll Debiting and Traffic Control Systems; Designed with State of the Art Linear and Nonlinear CAD Tools","authors":"M. Fuchs","doi":"10.1109/EUMA.1994.337348","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337348","url":null,"abstract":"An extremely low cost and very compact synthesizer - stabilized VCO for automatic toll debiting systems was developed. The RF section of the oscillator consists of a 1450MHz - VCO, a 20dBm buffer amplifier and a frequency quadrupler. This quadrupler is the core part of the system. He consists of a class - C biased bipolar transistor. All matching networks of the RF modules consist of standard SMD components. The complete circuit, therefore, has smaller dimensions.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127941416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337351
C. Galy, J. Graffeuil, J. Larroque, S. Vigneron
Monolithic transversal and recursive microwave active filters overcome the, drawback of heavy resonant elements and lack of operational amplifiers in high frequencies domain. We present a GaAs transversal MMIC filter centred at 11.7 GHz. The experimental results show great possibilities for future-agile pre-filtering modules in new generations of telecommunications receivers. The GaAs MMIC transversal active filter presented in this paper combinies pseudo-elliptic filters performances with a polynomial structure. The fundamental points of our work are: - easy-to-time effective synthesis technique with a new dedicated program for circuit calculations - stability of the circuit ensured by a simple construction and a good reproducibility - original idea of using lumped elements in telecommunications frequencies domain which allows a direct application of the theory - demonstration of the agile nature of these filters.
{"title":"A Ku-band MMIC Transversal Band-Pass Active Filter","authors":"C. Galy, J. Graffeuil, J. Larroque, S. Vigneron","doi":"10.1109/EUMA.1994.337351","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337351","url":null,"abstract":"Monolithic transversal and recursive microwave active filters overcome the, drawback of heavy resonant elements and lack of operational amplifiers in high frequencies domain. We present a GaAs transversal MMIC filter centred at 11.7 GHz. The experimental results show great possibilities for future-agile pre-filtering modules in new generations of telecommunications receivers. The GaAs MMIC transversal active filter presented in this paper combinies pseudo-elliptic filters performances with a polynomial structure. The fundamental points of our work are: - easy-to-time effective synthesis technique with a new dedicated program for circuit calculations - stability of the circuit ensured by a simple construction and a good reproducibility - original idea of using lumped elements in telecommunications frequencies domain which allows a direct application of the theory - demonstration of the agile nature of these filters.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134227209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337430
M. Maeda, H. Takehara, M. Nishijima, H. Fujimoto, Y. Ota, O. Ishikawa
A new power amplifier module (PAM) in which GaAs power MESFETs are mounted directly on an aluminum nitride (AIN) substrate has been developed for analog cellular phones. This module occupies a volume of 0.2cc, only 1/4 as large as that of conventional one, and can deliver an output power (Pout) of 31dBm with a power-added efficiency (PAE) of 58% at a low operating voltage of 3.5V around 900MHz band. Furthermore, a new microwave probe card has been introduced into on-wafer RF power measurement of the FETs in order to improve the yield of the PAMs. Using this probe card, the maximum output power of 30.9dBm has been obtained, and gain deviation between on-wafer and packaged FETs is only 1.4dB. This new concept PAM and the developed on-wafer measurement technique must promise advanced high-performance PAM.
{"title":"Direct Chip Mounting GaAs Power Module using an AIN Substrate","authors":"M. Maeda, H. Takehara, M. Nishijima, H. Fujimoto, Y. Ota, O. Ishikawa","doi":"10.1109/EUMA.1994.337430","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337430","url":null,"abstract":"A new power amplifier module (PAM) in which GaAs power MESFETs are mounted directly on an aluminum nitride (AIN) substrate has been developed for analog cellular phones. This module occupies a volume of 0.2cc, only 1/4 as large as that of conventional one, and can deliver an output power (Pout) of 31dBm with a power-added efficiency (PAE) of 58% at a low operating voltage of 3.5V around 900MHz band. Furthermore, a new microwave probe card has been introduced into on-wafer RF power measurement of the FETs in order to improve the yield of the PAMs. Using this probe card, the maximum output power of 30.9dBm has been obtained, and gain deviation between on-wafer and packaged FETs is only 1.4dB. This new concept PAM and the developed on-wafer measurement technique must promise advanced high-performance PAM.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134368879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337448
J. Viaud, R. Sommet, J. Teyssier, D. Floriot, R. Quéré
I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.
{"title":"Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions","authors":"J. Viaud, R. Sommet, J. Teyssier, D. Floriot, R. Quéré","doi":"10.1109/EUMA.1994.337448","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337448","url":null,"abstract":"I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131707623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337493
H. Ashoka, P. Gourlay, G. Callaghan, J. Ness
Space-qualified master oscillators at upper C-band microwave frequencies for INTELSAT VIII satellites have been developed. Active frequency multipliers using bipolar and GaAs MESFET devices provide multiplication gain and result in low power consumption. The multiplier produces more than 15 dBm output power at C-band while consuming less than 700 mW of DC power. A direct 3:9 way combiner-divider hag been developed to achieve the required 3:1 redundant configuration without the excess loss associated with the traditional 3:1:9 combiner-divider network. Soft substrates have been used in the fabrication of the master oscillator circuits enabling higher levels of integration of the circuits to be achieved at a lower cost. Use of active doublers, lower loss redundancy arrangement, and fabrication on soft substrates have resulted in an efficient and economical space-qualified master oscillator.
{"title":"Development of a Master Oscillator using Active Multipliers for Intelsat VIII Satellites","authors":"H. Ashoka, P. Gourlay, G. Callaghan, J. Ness","doi":"10.1109/EUMA.1994.337493","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337493","url":null,"abstract":"Space-qualified master oscillators at upper C-band microwave frequencies for INTELSAT VIII satellites have been developed. Active frequency multipliers using bipolar and GaAs MESFET devices provide multiplication gain and result in low power consumption. The multiplier produces more than 15 dBm output power at C-band while consuming less than 700 mW of DC power. A direct 3:9 way combiner-divider hag been developed to achieve the required 3:1 redundant configuration without the excess loss associated with the traditional 3:1:9 combiner-divider network. Soft substrates have been used in the fabrication of the master oscillator circuits enabling higher levels of integration of the circuits to be achieved at a lower cost. Use of active doublers, lower loss redundancy arrangement, and fabrication on soft substrates have resulted in an efficient and economical space-qualified master oscillator.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117312418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337252
D. Young, I. Hunter
A new class of E-plane integrated circuit bandpass filter is introduced which provide high skirt selectivity and may have asymmetric transfer function. Extracted pole resonators are used to give finite frequency transmission zeros which can be placed asymmetrically on the s-plane imaginary axis. The extracted pole resonators are realised by parallel coupled finline tracks. The resultant structure consists entirely of a single circuit board or metal insert as with a conventional E-plane filter. Practical results are presented for an initial design of an asymmetric 11.6GHz finline filter.
{"title":"Integrated E-Plane Filters with Finite Frequency Transmission Zeros","authors":"D. Young, I. Hunter","doi":"10.1109/EUMA.1994.337252","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337252","url":null,"abstract":"A new class of E-plane integrated circuit bandpass filter is introduced which provide high skirt selectivity and may have asymmetric transfer function. Extracted pole resonators are used to give finite frequency transmission zeros which can be placed asymmetrically on the s-plane imaginary axis. The extracted pole resonators are realised by parallel coupled finline tracks. The resultant structure consists entirely of a single circuit board or metal insert as with a conventional E-plane filter. Practical results are presented for an initial design of an asymmetric 11.6GHz finline filter.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"19 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132436770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337199
R. Boix
In this paper, the author briefly revises the application of the spectral domain approach (SDA) to the analysis of multiconductor planar structures embedded in multilayered, anisotropic and lossy substrates. By using his own experience, the author provides several advices concerning the numerical computation of the spectral Green's function, concerning the choice of basis functions in the spatial domain for the unknown field sources (current densities, charge densities, ...), and concerning the numerical evaluation of the infinite series and integrals which have to be computed when applying the SDA. Some results are presented for the characteristic parameters of planar transmission lines (microstrips, coplanar waveguides, striplines), microstrip discontinuities and microstrip resonators. These results, which have been obtained by using the SDA, are provided as examples of the application of this numerical technique to the characterization of planar structures embedded in multilayered, anisotropic and lossy substrates.
{"title":"Spectral Domain Analysis of Multiconductor, Multilayered, Lossy Anisotropic Structures","authors":"R. Boix","doi":"10.1109/EUMA.1994.337199","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337199","url":null,"abstract":"In this paper, the author briefly revises the application of the spectral domain approach (SDA) to the analysis of multiconductor planar structures embedded in multilayered, anisotropic and lossy substrates. By using his own experience, the author provides several advices concerning the numerical computation of the spectral Green's function, concerning the choice of basis functions in the spatial domain for the unknown field sources (current densities, charge densities, ...), and concerning the numerical evaluation of the infinite series and integrals which have to be computed when applying the SDA. Some results are presented for the characteristic parameters of planar transmission lines (microstrips, coplanar waveguides, striplines), microstrip discontinuities and microstrip resonators. These results, which have been obtained by using the SDA, are provided as examples of the application of this numerical technique to the characterization of planar structures embedded in multilayered, anisotropic and lossy substrates.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132746490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337215
D. Mirshekar-Syahkal
A computer technique based on the quasi-static approximation for efficient determination of the equivalent circuit of the CPW junctions was introduced. The technique uses the spectral domain formulation. As an example, the method is applied to the CPW T-junction and the equivalent circuit of a junction was obtained. Both the measurements and full-wave electromagnetic simulation supported the accuracy of the results.
{"title":"A Quasi-Static Spectral Domain Technique for Modelling Discontinuities in CPW Structures","authors":"D. Mirshekar-Syahkal","doi":"10.1109/EUMA.1994.337215","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337215","url":null,"abstract":"A computer technique based on the quasi-static approximation for efficient determination of the equivalent circuit of the CPW junctions was introduced. The technique uses the spectral domain formulation. As an example, the method is applied to the CPW T-junction and the equivalent circuit of a junction was obtained. Both the measurements and full-wave electromagnetic simulation supported the accuracy of the results.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337383
Shuguang Chen, M. Ando, N. Goto
Ideally soft and hard surfaces can be obtained by transversely and longitudinally oriented conducting strips on a grounded dielectric slab, respectively. The importance of this kind of surfaces in antenna and propagation makes their accurate and simple electromagnetic expressions necessary. In this communication, the expressions are derived by using the low frequency assumption. The results of our expressions are compared numerically with that by Point Matching Method (PMM). We have calculated and discussed the structures used as the soft and hard surfaces, and the bandwidth of the reflection coefficient phase.
{"title":"Closed Form Reflection Coefficients of Strips on A Grounded Dielectric Slab For Artificially Soft And Hard Surfaces","authors":"Shuguang Chen, M. Ando, N. Goto","doi":"10.1109/EUMA.1994.337383","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337383","url":null,"abstract":"Ideally soft and hard surfaces can be obtained by transversely and longitudinally oriented conducting strips on a grounded dielectric slab, respectively. The importance of this kind of surfaces in antenna and propagation makes their accurate and simple electromagnetic expressions necessary. In this communication, the expressions are derived by using the low frequency assumption. The results of our expressions are compared numerically with that by Point Matching Method (PMM). We have calculated and discussed the structures used as the soft and hard surfaces, and the bandwidth of the reflection coefficient phase.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124428720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337376
A. Abramowicz
Coupled dielectric resonators are analyzed using resonant frequencies of the structures - the eigenfrequency method of coupling coefficient calculations. The method uses simple lumped elements models of coupled dielectric resonators. This models are based upon the mutual coupling concept. It is shown that different resonant modes need to be analyzed with different models. Two and three coupled resonators are investigated. Computations agree very well with the experimental results.
{"title":"Analysis of Coupled Dielectric Resonators by Means of Eigenfrequency Method","authors":"A. Abramowicz","doi":"10.1109/EUMA.1994.337376","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337376","url":null,"abstract":"Coupled dielectric resonators are analyzed using resonant frequencies of the structures - the eigenfrequency method of coupling coefficient calculations. The method uses simple lumped elements models of coupled dielectric resonators. This models are based upon the mutual coupling concept. It is shown that different resonant modes need to be analyzed with different models. Two and three coupled resonators are investigated. Computations agree very well with the experimental results.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114360671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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