Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337449
Yoshinobu Sasaki, N. Tanino, Shigeru Mitsui
In this paper, a microwave symbolic layout is proposed as an interface between a circuit simulation and a mask pattern. This system is separated from the design of process oriented design rules allowing a designer to design a circuit without understanding the complicated MMIC process. An automatic conversion program has been also developed to convert from a mricrowave symbolic layout to a mask pattern. Using this system, a designer can consistently go from the circuit design operation to the mask data creation.
{"title":"Integrated CAD System for an MMIC using Symbolic Layout","authors":"Yoshinobu Sasaki, N. Tanino, Shigeru Mitsui","doi":"10.1109/EUMA.1994.337449","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337449","url":null,"abstract":"In this paper, a microwave symbolic layout is proposed as an interface between a circuit simulation and a mask pattern. This system is separated from the design of process oriented design rules allowing a designer to design a circuit without understanding the complicated MMIC process. An automatic conversion program has been also developed to convert from a mricrowave symbolic layout to a mask pattern. Using this system, a designer can consistently go from the circuit design operation to the mask data creation.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129209152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337324
P. Etourneau, P. Lévêque, B. Jecko
Increasing the substrate thickness of a coaxially fed microstrip antenna reinforces interactions between modes, and provides the antenna with specific characteristics. Then a new working domain, monitored by an empiric law, is defined ensuring a broad band matching. Such an antenna shows the same radiation pattern as one running on its fundamental mode.
{"title":"A New Behaviour of Coaxially Fed Rectangular Microstrip Antennas Printed on Thick Substrate","authors":"P. Etourneau, P. Lévêque, B. Jecko","doi":"10.1109/EUMA.1994.337324","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337324","url":null,"abstract":"Increasing the substrate thickness of a coaxially fed microstrip antenna reinforces interactions between modes, and provides the antenna with specific characteristics. Then a new working domain, monitored by an empiric law, is defined ensuring a broad band matching. Such an antenna shows the same radiation pattern as one running on its fundamental mode.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128763314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337500
J. Robinson, David Linton
A novel Knowledge Based System for MMIC layout is presented, GALA (Gallium Arsenide Layout Assistant), which uses a recognized artificial intelligence technique called the blackboard architecture to place and route component cells[1][2]. The system has the overall aim of reducing the amount of GaAs real estate usage thereby Increasing yield and reducing cost. It is the third stage in a project developed at The Queen's University of Belfast Swhich aims to fully automate the design and layout of a MMIC [3][4][5][6], and is the final component within the MADE framework (MMIC Automated Design Environment (see Figure 1).
{"title":"Automating the Layout of MMIC Circuits Using Artificial Intelligence Techniques","authors":"J. Robinson, David Linton","doi":"10.1109/EUMA.1994.337500","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337500","url":null,"abstract":"A novel Knowledge Based System for MMIC layout is presented, GALA (Gallium Arsenide Layout Assistant), which uses a recognized artificial intelligence technique called the blackboard architecture to place and route component cells[1][2]. The system has the overall aim of reducing the amount of GaAs real estate usage thereby Increasing yield and reducing cost. It is the third stage in a project developed at The Queen's University of Belfast Swhich aims to fully automate the design and layout of a MMIC [3][4][5][6], and is the final component within the MADE framework (MMIC Automated Design Environment (see Figure 1).","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125534047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337394
P. Tasker, M. Demmler, M. Schlechtweg, M. Barciela
Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements. The techniques developed allow for the-direct extraction of the RF current and voltage constraints associated with the transistor output characteristic (knee voltage and breakdown characteristics) and for the direct extraction of the, transistor RF large signal transfer characteristic. The importance of this new approach is that these parameters, measured under real RF operating conditions, can be compared directly with those determined from DC or small signal S-parameter measurements. This comparison is essential if large signal RF measurements are to be utilized in the optimization of high power transistor structures and in the development of accurate non-linear CAD models.
{"title":"Novel Approach to the Extraction of Transistor Parameters from Large Signal Measurements","authors":"P. Tasker, M. Demmler, M. Schlechtweg, M. Barciela","doi":"10.1109/EUMA.1994.337394","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337394","url":null,"abstract":"Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements. The techniques developed allow for the-direct extraction of the RF current and voltage constraints associated with the transistor output characteristic (knee voltage and breakdown characteristics) and for the direct extraction of the, transistor RF large signal transfer characteristic. The importance of this new approach is that these parameters, measured under real RF operating conditions, can be compared directly with those determined from DC or small signal S-parameter measurements. This comparison is essential if large signal RF measurements are to be utilized in the optimization of high power transistor structures and in the development of accurate non-linear CAD models.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126718318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337438
J. Hirokawa, M. Ando, N. Goto, M. Uematsu
This paper proposes a single-layer slotted leaky waveguide array for mobile DBS reception. A single-layer feeding structure is proposed, where the feed waveguide is attached to the same layer of the radiating waveguides. It brings simple fabrication suitable for the mass production of slotted waveguide arrays. Short radiating leaky waveguides are used to have a large beam-tilting angle of about 50 degrees sufficient for perfectly horizontal installation of the antenna and a broad beamwidth in the elevation plane. A model antenna sized 30 cm by 21 cm has 78 % efficiency in peak and more than 60 % efficiency in DBS band, which is sufficient for clear DBS reception by a picture tube display. It has also a broad 1dB-down beamwidth of 6.5 degrees in the elevation plane, which covers about one-third area of Japan without the elevation tracking. K- and Ka-band antennas are also fabricated for advanced mobile satellite communication experiments in Japan. They also have high efficiency more than 60 % at each design frequency.
{"title":"Low-Profile Mobile DBS Receiving System using a Single-Layer Slotted Leaky Waveguide Array","authors":"J. Hirokawa, M. Ando, N. Goto, M. Uematsu","doi":"10.1109/EUMA.1994.337438","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337438","url":null,"abstract":"This paper proposes a single-layer slotted leaky waveguide array for mobile DBS reception. A single-layer feeding structure is proposed, where the feed waveguide is attached to the same layer of the radiating waveguides. It brings simple fabrication suitable for the mass production of slotted waveguide arrays. Short radiating leaky waveguides are used to have a large beam-tilting angle of about 50 degrees sufficient for perfectly horizontal installation of the antenna and a broad beamwidth in the elevation plane. A model antenna sized 30 cm by 21 cm has 78 % efficiency in peak and more than 60 % efficiency in DBS band, which is sufficient for clear DBS reception by a picture tube display. It has also a broad 1dB-down beamwidth of 6.5 degrees in the elevation plane, which covers about one-third area of Japan without the elevation tracking. K- and Ka-band antennas are also fabricated for advanced mobile satellite communication experiments in Japan. They also have high efficiency more than 60 % at each design frequency.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126077863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337432
M. Wong, O. Picon, V. Hanna
A finite element method based on the use of Whitney forms for the space discretization of the fields and a leap-frog scheme in time is presented. This method has both the flexibility related to a finite element mesh conforming to the geometry and the capability of time domain techniques to get overall frequency band responses with one calculation. The efficiency of the method is shown through two examples. The accuracy is checked with the case study of a rectangular cavity. A practical case of a via hole with a circular or square cross-section is also studied and compared to experimental data.
{"title":"Application of a 3D Finite Element Method in the Time Domain to Microwave Components","authors":"M. Wong, O. Picon, V. Hanna","doi":"10.1109/EUMA.1994.337432","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337432","url":null,"abstract":"A finite element method based on the use of Whitney forms for the space discretization of the fields and a leap-frog scheme in time is presented. This method has both the flexibility related to a finite element mesh conforming to the geometry and the capability of time domain techniques to get overall frequency band responses with one calculation. The efficiency of the method is shown through two examples. The accuracy is checked with the case study of a rectangular cavity. A practical case of a via hole with a circular or square cross-section is also studied and compared to experimental data.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116102861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337397
A. Jastrzebski
Currently used modelling approaches fail to predict accurately non-linear dynamic behaviour of power MESFETs when self-heating and dispersion effects are present. A novel non-linear MESFET model and a method of extraction of its parameters are proposed, which take into account these effects. The main measurements required to characterise the device are pulsed I-V characteristics and small-signal S-parameters, performed for a range of ambient temperatures and quiescent bias points. A specialised computer controlled pulsed measurement system has been designed and constructed to perform device characterisation. The method is illustrated on the example of a power MESFET but is equally applicable to HEMTs.
{"title":"Characterisation and Modelling of Temperature and Dispersion Effects in Power MESFETs","authors":"A. Jastrzebski","doi":"10.1109/EUMA.1994.337397","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337397","url":null,"abstract":"Currently used modelling approaches fail to predict accurately non-linear dynamic behaviour of power MESFETs when self-heating and dispersion effects are present. A novel non-linear MESFET model and a method of extraction of its parameters are proposed, which take into account these effects. The main measurements required to characterise the device are pulsed I-V characteristics and small-signal S-parameters, performed for a range of ambient temperatures and quiescent bias points. A specialised computer controlled pulsed measurement system has been designed and constructed to perform device characterisation. The method is illustrated on the example of a power MESFET but is equally applicable to HEMTs.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120962947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337358
M. Farina, G. Gerini, T. Rozzi
In this contribution we provide a full-wave analysis of the effect of conductor losses in MIS and Schottky junction devices. This rigorous treatment explains the fundamental mechanism controlling dispersion in real planar circuits and theoretical data are in good agreement with experimental and FDTD results from other sources.
{"title":"Full Wave Analysis of Slow Wave Effects in Planar Circuits with Lossy Conductors","authors":"M. Farina, G. Gerini, T. Rozzi","doi":"10.1109/EUMA.1994.337358","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337358","url":null,"abstract":"In this contribution we provide a full-wave analysis of the effect of conductor losses in MIS and Schottky junction devices. This rigorous treatment explains the fundamental mechanism controlling dispersion in real planar circuits and theoretical data are in good agreement with experimental and FDTD results from other sources.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124961182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337366
E. Bastida, P. Antolini, A. Castelli, G. Donzelli, B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti
The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.
{"title":"High Efficiency and Power Ion Implanted MESFET Devices","authors":"E. Bastida, P. Antolini, A. Castelli, G. Donzelli, B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti","doi":"10.1109/EUMA.1994.337366","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337366","url":null,"abstract":"The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116779454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337269
W. Ehrlinger, W. Bischof, K. Haug, A. Huelsmann, M. Schlechtweg
GaAs-MMICs are of increasing importance for telecommunications equipment, consumer electronics, and traffic management systems. We have had previously developed, a number of different basic GaAs-IC-modules; many of them operating from almost DC up to 65 GHz. Based on these modules, we have designed, and built a relative complex modulator - MMIC, which operates from 35 GHz up to 65 GHz. Both, simulated and experimental results of some basic modules, and of the successfully operating, wide-band monolithic integrated modulator are given.
{"title":"Wide-band monolithic modulator in GaAs/AIGaAs-technology","authors":"W. Ehrlinger, W. Bischof, K. Haug, A. Huelsmann, M. Schlechtweg","doi":"10.1109/EUMA.1994.337269","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337269","url":null,"abstract":"GaAs-MMICs are of increasing importance for telecommunications equipment, consumer electronics, and traffic management systems. We have had previously developed, a number of different basic GaAs-IC-modules; many of them operating from almost DC up to 65 GHz. Based on these modules, we have designed, and built a relative complex modulator - MMIC, which operates from 35 GHz up to 65 GHz. Both, simulated and experimental results of some basic modules, and of the successfully operating, wide-band monolithic integrated modulator are given.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131238200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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