Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337239
S. Xiao, R. Vahldieck
Transient propagation of Gaussian pulses on superconductive conductor-backed coplanar waveguides are investigated using the Finite Difference Time Domaim Method (FDTD). The two-fluid model is used to describe the superconductivity. The frequency-dependent negative imaginary part of the conductivity is modeled with the FDTD by storing the electric field history. A variable mesh with second order accuracy is used to resolve the thin superconductor film and buffer layer.
{"title":"Signal Propagation in Conductor-Backed Superconductor Coplanar Waveguides","authors":"S. Xiao, R. Vahldieck","doi":"10.1109/EUMA.1994.337239","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337239","url":null,"abstract":"Transient propagation of Gaussian pulses on superconductive conductor-backed coplanar waveguides are investigated using the Finite Difference Time Domaim Method (FDTD). The two-fluid model is used to describe the superconductivity. The frequency-dependent negative imaginary part of the conductivity is modeled with the FDTD by storing the electric field history. A variable mesh with second order accuracy is used to resolve the thin superconductor film and buffer layer.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114763964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337373
Y. Ishikawa, J. Hattori, S. Abe, E. Kobayashi, T. Nishiyama
A new small sized and low loss 1.9 GHz band dielectric duplexer has been developed. 1.9 GHz TM110 dual mode monoblock dielectric resonators, which designed to have much smaller volume (27 cc) and high unloaded Q(5000), have been constructed by using new precise molding techniques. And to insure that we are able to simulate and design optimized electrical performance of the duplexer accurately, we have proposed a dielectric dual mode waveguide transmission line design, method. The duplexer thus designed and manufactured has excellent performanc. The volume is 200 cc, insertion loss is 0.45 dB, and attenuation is 85 dB.
{"title":"1.9 GHz Compact Low Loss Dielectric Duplexer Designed by Dual Mode Waveguide Transmission Line Method","authors":"Y. Ishikawa, J. Hattori, S. Abe, E. Kobayashi, T. Nishiyama","doi":"10.1109/EUMA.1994.337373","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337373","url":null,"abstract":"A new small sized and low loss 1.9 GHz band dielectric duplexer has been developed. 1.9 GHz TM110 dual mode monoblock dielectric resonators, which designed to have much smaller volume (27 cc) and high unloaded Q(5000), have been constructed by using new precise molding techniques. And to insure that we are able to simulate and design optimized electrical performance of the duplexer accurately, we have proposed a dielectric dual mode waveguide transmission line design, method. The duplexer thus designed and manufactured has excellent performanc. The volume is 200 cc, insertion loss is 0.45 dB, and attenuation is 85 dB.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123401957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337335
Jonathan B. Scott, M. Sayed, P. Schmitz, A. Parker
We describe a pulsed-bias, pulsed-RF device measurement system with high bias power (6A/40V), high RF power capability (50W at 2GHz and lOW at 50GHz), and high resolution (16-bit). This system is intended to support both RF characterisation outside device continuous safe operating area (SOA), and data-acquisition for device modelling. The system is modular and flexible, offers very small duty cycles (<0.001%) simultaneous wide dynamic range (75dB at 50GHz), and employs instruments which are already available. We present novel measurements on several GaAs devices and draw conclusions important for future device characterisation efforts.
{"title":"Pulsed-bias/Pulsed-RF Device Measurement System Requirements","authors":"Jonathan B. Scott, M. Sayed, P. Schmitz, A. Parker","doi":"10.1109/EUMA.1994.337335","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337335","url":null,"abstract":"We describe a pulsed-bias, pulsed-RF device measurement system with high bias power (6A/40V), high RF power capability (50W at 2GHz and lOW at 50GHz), and high resolution (16-bit). This system is intended to support both RF characterisation outside device continuous safe operating area (SOA), and data-acquisition for device modelling. The system is modular and flexible, offers very small duty cycles (<0.001%) simultaneous wide dynamic range (75dB at 50GHz), and employs instruments which are already available. We present novel measurements on several GaAs devices and draw conclusions important for future device characterisation efforts.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123455622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337232
Y. Kalayci, R. Tempel, B. Hopf, J. Borkes, R. Grundler, I. Wolff
As MMICs become more widespread in commercial applications the costs of production gain increased attention. For the MMIC-Designer it is important to reduce the chip size, while keeping the electrical characteristics. To demonstrate which size reduction is possible using lumped elements, this paper documents the comparison of a distributed and a lumped element MMIC K-band amplifier in coplanar line technique. The distributed element amplifier is a two-stage design and needs a size of 3 mm2. In the frequency range from 18 to 20 GHz the gain is more than 12 dB. The lumped element amplifier is a three-stage design, which has a size of 1 mm2. For the same frequency range the gain is more than 23 dB.
{"title":"Miniaturising of K-Band Coplanar MMIC-Amplifiers by Using Lumped Elements","authors":"Y. Kalayci, R. Tempel, B. Hopf, J. Borkes, R. Grundler, I. Wolff","doi":"10.1109/EUMA.1994.337232","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337232","url":null,"abstract":"As MMICs become more widespread in commercial applications the costs of production gain increased attention. For the MMIC-Designer it is important to reduce the chip size, while keeping the electrical characteristics. To demonstrate which size reduction is possible using lumped elements, this paper documents the comparison of a distributed and a lumped element MMIC K-band amplifier in coplanar line technique. The distributed element amplifier is a two-stage design and needs a size of 3 mm2. In the frequency range from 18 to 20 GHz the gain is more than 12 dB. The lumped element amplifier is a three-stage design, which has a size of 1 mm2. For the same frequency range the gain is more than 23 dB.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124471686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337371
A. D. Lago, Alberto Lobina, Riccardo Urciuoli
A duly shaped Dielectric Resonators widens the tuning range of TM-mode Dielectric Resonator filters and allows a really cost-effective and high-Q radio frequency filtering operation. A method for a fast evaluation of the shaped-Dielectric Resonator resonant frequency and for the related filter design was investigated. The first realization has been for a Medium Capacity Digital Radio equipment in the 7 GHz band; it proved the correctness of our evaluations, having easiness of realization and tuning, and very good (near to theoretical) electrical performance. We describe in the following the design procedure of these wide-range branching filters and we show the typical results in terms of tunability and frequency response.
{"title":"A Simple Solution for High Performance, Cost-Effective Filtering: A New Technique Widens the Tuning Range of TM-mode Dielectric Resonator Filters","authors":"A. D. Lago, Alberto Lobina, Riccardo Urciuoli","doi":"10.1109/EUMA.1994.337371","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337371","url":null,"abstract":"A duly shaped Dielectric Resonators widens the tuning range of TM-mode Dielectric Resonator filters and allows a really cost-effective and high-Q radio frequency filtering operation. A method for a fast evaluation of the shaped-Dielectric Resonator resonant frequency and for the related filter design was investigated. The first realization has been for a Medium Capacity Digital Radio equipment in the 7 GHz band; it proved the correctness of our evaluations, having easiness of realization and tuning, and very good (near to theoretical) electrical performance. We describe in the following the design procedure of these wide-range branching filters and we show the typical results in terms of tunability and frequency response.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125734096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337395
V. Rizzoli, A. Costanzo
The paper proposes a closed-form empirical MESFET model incorporating exact charge and energy conservation constraints. Charge storage in the intrinsic device is described in terms of an energy fuunction explicitly depending on gate and drain voltages, from which the capacitance coefficients and the displacement currents are generated by differentiation. It is shown that this simultaneously ensures the full physical consistency of the model in large-signal operation, and makes the parameter extraction process neater and better defined. In particular, the extraction naturally suggests a well conditioned and accurate model for the voltage-dependent channel delay.
{"title":"A Fully Conservative Nonlinear Empirical Model of the Microwave FET","authors":"V. Rizzoli, A. Costanzo","doi":"10.1109/EUMA.1994.337395","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337395","url":null,"abstract":"The paper proposes a closed-form empirical MESFET model incorporating exact charge and energy conservation constraints. Charge storage in the intrinsic device is described in terms of an energy fuunction explicitly depending on gate and drain voltages, from which the capacitance coefficients and the displacement currents are generated by differentiation. It is shown that this simultaneously ensures the full physical consistency of the model in large-signal operation, and makes the parameter extraction process neater and better defined. In particular, the extraction naturally suggests a well conditioned and accurate model for the voltage-dependent channel delay.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125842182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337234
D. Langrez, E. Delos, G. Salmer
In this paper are presented some new experimental results concerning 0.15μm dual gate PM-HEMTs obtained by using a new method of characterization. It consists of a step-by-step procedure which allows to extract the entire equivalent scheme of dual gate devices. All parasitic elements are determined by biasing the Dual Gate FET (DGFET) under 'cold' regime (Vds=0V) : the forward gates bias conditions allow to deduce the value of serie elements like access resistances and inductances from Zij parameters, and, the reverse gates bias conditions lead to the parallel pad and coupling capacitances from Yij parameters. For intrinsic elements, the cascode configuration has been retained : the DGFET is considered as being the association of two equivalent single gate transistors. On wafer three-ports S-parameters measurements are performed from 1.5 to 26.5 GHz with a specific test bench that we have developped in our laboratory.
{"title":"Modelling of 0.15μm Dual Gate PM-HEMTs by using Experimental Extraction","authors":"D. Langrez, E. Delos, G. Salmer","doi":"10.1109/EUMA.1994.337234","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337234","url":null,"abstract":"In this paper are presented some new experimental results concerning 0.15μm dual gate PM-HEMTs obtained by using a new method of characterization. It consists of a step-by-step procedure which allows to extract the entire equivalent scheme of dual gate devices. All parasitic elements are determined by biasing the Dual Gate FET (DGFET) under 'cold' regime (Vds=0V) : the forward gates bias conditions allow to deduce the value of serie elements like access resistances and inductances from Zij parameters, and, the reverse gates bias conditions lead to the parallel pad and coupling capacitances from Yij parameters. For intrinsic elements, the cascode configuration has been retained : the DGFET is considered as being the association of two equivalent single gate transistors. On wafer three-ports S-parameters measurements are performed from 1.5 to 26.5 GHz with a specific test bench that we have developped in our laboratory.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"66 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128671464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337257
K. Wada, N. Otani, Y. Noguchi, J. Ishii
We present the newly developed bandpass filters (BPFs) using the asymmetric broad-side coupled coplanar waveguides (ABC-CPWs). These CPW-BPFs are made of the interdigital arrays of the resonators and the tapped-line to-the resonators. The experimental results are given of the newly developed interdigital BPFs using ABC-CPWs and compared with the simulations to check the passband characteristics and the spurious resonance responses. We developed that the interdigital BPFs using the ABC-CPWs have very small fractional bandwidth. The newly developed interdigital BPFs using the ABC-CPWs have some advantages such as compact size, lighter weight, low insertion losses and very small fractional bandwidth. The good agreements are obtained between them.
{"title":"Tapped-Line Interdigital Bandpass Filters with Narrow Bandwidth Using Asymmetric Broadside Coupled Coplanar Waveguides","authors":"K. Wada, N. Otani, Y. Noguchi, J. Ishii","doi":"10.1109/EUMA.1994.337257","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337257","url":null,"abstract":"We present the newly developed bandpass filters (BPFs) using the asymmetric broad-side coupled coplanar waveguides (ABC-CPWs). These CPW-BPFs are made of the interdigital arrays of the resonators and the tapped-line to-the resonators. The experimental results are given of the newly developed interdigital BPFs using ABC-CPWs and compared with the simulations to check the passband characteristics and the spurious resonance responses. We developed that the interdigital BPFs using the ABC-CPWs have very small fractional bandwidth. The newly developed interdigital BPFs using the ABC-CPWs have some advantages such as compact size, lighter weight, low insertion losses and very small fractional bandwidth. The good agreements are obtained between them.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127107117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337213
C. Guimard, M. Drissi, J. Citerne
A full-wave analysis of microstrip with a finite ground plane is developed using the Green's functions of a multilayer geometry not backed by a ground plane. A two-dimensional Method of Moment (MoM) is used to derive the current distribution on each metallization including the finite ground plane. The calculated dispersion characteristics for coplanar strips are compared to the available experimental data where good a agreement is obtained. Then, the effect of the finite ground plane on the microstrip propagation characteristics is rigorously analysed. Finally, some experimental measurements of microstrip resonator with a limited ground plane are achieved and compared with the theoretical results.
{"title":"Dispersion Characteristics Analysis of Multilayer Microstrip Lines with Finite Ground Plane","authors":"C. Guimard, M. Drissi, J. Citerne","doi":"10.1109/EUMA.1994.337213","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337213","url":null,"abstract":"A full-wave analysis of microstrip with a finite ground plane is developed using the Green's functions of a multilayer geometry not backed by a ground plane. A two-dimensional Method of Moment (MoM) is used to derive the current distribution on each metallization including the finite ground plane. The calculated dispersion characteristics for coplanar strips are compared to the available experimental data where good a agreement is obtained. Then, the effect of the finite ground plane on the microstrip propagation characteristics is rigorously analysed. Finally, some experimental measurements of microstrip resonator with a limited ground plane are achieved and compared with the theoretical results.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127173132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337375
D. Chaimbault, S. Verdeyme, P. Guillon
The coupling between a dielectric resonator and a microstrip line is always topical because of the use of D.R. in many microwave active devices, in particular in oscillators. In this paper the coupling'coefficient between a microstrip line and cylindrical dielectric resonators of different dimensions used on their first TE mode is evaluated by using 3 analytical methods. The results prove the limits of these methods. Some rigorous computations using the Finite Element Method (F.E.M.) have been developped. Theoretical and experimental results are then in good agreement.
{"title":"Rigorous Design of the Coupling Between a Dielectric Resonator and a Microstrip Line","authors":"D. Chaimbault, S. Verdeyme, P. Guillon","doi":"10.1109/EUMA.1994.337375","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337375","url":null,"abstract":"The coupling between a dielectric resonator and a microstrip line is always topical because of the use of D.R. in many microwave active devices, in particular in oscillators. In this paper the coupling'coefficient between a microstrip line and cylindrical dielectric resonators of different dimensions used on their first TE mode is evaluated by using 3 analytical methods. The results prove the limits of these methods. Some rigorous computations using the Finite Element Method (F.E.M.) have been developped. Theoretical and experimental results are then in good agreement.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132861255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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