Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337243
P. Quéméneur, N. Caillère, F.R. Jourdrouin, S. Toutain
In order to measure accurately the instantaneous real speed on the sea, a low cost Doppler radar has been developed in the W-band. The main parts of the device are a Gunn diode oscillator and a Schottky diode mixer integrated on the same printed circuit, on either side of the emission and reception system including a conical horn with a Fresnel zone plate, excited by the dipole antennas of emission and reception. The Doppler signal, which is obtained after mixing, must be in the order of tens of kHz.
{"title":"A Low Cost W-Band Doppler Radar","authors":"P. Quéméneur, N. Caillère, F.R. Jourdrouin, S. Toutain","doi":"10.1109/EUMA.1994.337243","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337243","url":null,"abstract":"In order to measure accurately the instantaneous real speed on the sea, a low cost Doppler radar has been developed in the W-band. The main parts of the device are a Gunn diode oscillator and a Schottky diode mixer integrated on the same printed circuit, on either side of the emission and reception system including a conical horn with a Fresnel zone plate, excited by the dipole antennas of emission and reception. The Doppler signal, which is obtained after mixing, must be in the order of tens of kHz.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114870694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337413
Z. Fan, S. Pennock
The coplanar waveguide loaded inset dielectric guide is described in comparison with conventional coplanar waveguide, and analyzed using an integral equation method. This structure has several interesting features useful for microwave and millimeter wave applications. Numerical results are presented to illustrate the effects of various structural and material parameters on propagation constant and characteristic impedance. By suitable choice of these parameters, a wide single-mode bandwidth and a wide range of characteristic impedance can be achieved. Comparison between computed and measured data shows good agreement.
{"title":"Characteristics of Coplanar Waveguide Loaded Inset Dielectric Guide","authors":"Z. Fan, S. Pennock","doi":"10.1109/EUMA.1994.337413","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337413","url":null,"abstract":"The coplanar waveguide loaded inset dielectric guide is described in comparison with conventional coplanar waveguide, and analyzed using an integral equation method. This structure has several interesting features useful for microwave and millimeter wave applications. Numerical results are presented to illustrate the effects of various structural and material parameters on propagation constant and characteristic impedance. By suitable choice of these parameters, a wide single-mode bandwidth and a wide range of characteristic impedance can be achieved. Comparison between computed and measured data shows good agreement.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116227583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337242
D. Smith, B.S. Lee
This paper describes work done on the development of small aperture antennas for circular polarisation. In particular for the present application, which involved fitting antennas to an aerodynamic body, the antennas had to be conformal to minimise drag and also be of low weight and small size. A novel antenna design for the production of circular polarisation is reported. Improvements to the original design, which have resulted in extending the performance of this antenna are also reported Measured results, for axial ratio and return loss, show that this antenna operates very satisfactorily over a bandwidth of appraximately 1 GHz at X band. This paper also describes further work conducted on a second type of small antenna also for circulat polarisation. This type of antenna utilises a multisection quarter wave plate design to transform linear polarisation into circular polarisation. For the present application, which involved fitting the transmit and receive antennas in close proximity within the small nose assembly of a Semi Active Radar Target or S.A.R.T., a very high degree of isolation is required. This paper includes a description of techniques employed to achieve the required degree of isolation between antennas
{"title":"Circularly Polarised Antenna Designs for a Semi Active Radar Target","authors":"D. Smith, B.S. Lee","doi":"10.1109/EUMA.1994.337242","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337242","url":null,"abstract":"This paper describes work done on the development of small aperture antennas for circular polarisation. In particular for the present application, which involved fitting antennas to an aerodynamic body, the antennas had to be conformal to minimise drag and also be of low weight and small size. A novel antenna design for the production of circular polarisation is reported. Improvements to the original design, which have resulted in extending the performance of this antenna are also reported Measured results, for axial ratio and return loss, show that this antenna operates very satisfactorily over a bandwidth of appraximately 1 GHz at X band. This paper also describes further work conducted on a second type of small antenna also for circulat polarisation. This type of antenna utilises a multisection quarter wave plate design to transform linear polarisation into circular polarisation. For the present application, which involved fitting the transmit and receive antennas in close proximity within the small nose assembly of a Semi Active Radar Target or S.A.R.T., a very high degree of isolation is required. This paper includes a description of techniques employed to achieve the required degree of isolation between antennas","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115286858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337387
H. Jin, R. Vahldieck, H. Minkus
Flip-chip interconnections between MMIC's and the motherboard are analyzed rigorously using the frequency-domain TLM (FDTLM) method. It is found that flip-chip packaging shows generally better performance than wire bond transitions and that the reflections from the bump discontinuity depends critically on the bump height and the type of transmission line used. Bump discontinuities between CPW motherboard and CPW chip show better transition performance than bump transitions between mincrostrip lines. For small overlap length between transmission lines the effect on the s-parameters is negligible.
{"title":"FDTLM Analysis of Broadband Flip-Chip Interconnections","authors":"H. Jin, R. Vahldieck, H. Minkus","doi":"10.1109/EUMA.1994.337387","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337387","url":null,"abstract":"Flip-chip interconnections between MMIC's and the motherboard are analyzed rigorously using the frequency-domain TLM (FDTLM) method. It is found that flip-chip packaging shows generally better performance than wire bond transitions and that the reflections from the bump discontinuity depends critically on the bump height and the type of transmission line used. Bump discontinuities between CPW motherboard and CPW chip show better transition performance than bump transitions between mincrostrip lines. For small overlap length between transmission lines the effect on the s-parameters is negligible.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124994683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337304
M. de Murcia, E. Richard, A. Benvenuti, J. Vanbremeersch, J. Zimmermann
Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.
{"title":"Microwave noise of hot electrons in AlxGal-xAs channel. Procedure for measuring AlGaAs lattice heating","authors":"M. de Murcia, E. Richard, A. Benvenuti, J. Vanbremeersch, J. Zimmermann","doi":"10.1109/EUMA.1994.337304","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337304","url":null,"abstract":"Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337370
L. Telliez, P. Chaumas, S. Marcillaud, E. Watrin
This paper describes the design, fabrication and measured performances of C-band monolithic two-stage and three-stage amplifiers. These two on-chip fully matched versions designed for class-AB operation demonstrate 7 Watt output power over the 5 - 6 GHz frequency range with associated power added efficiency higher than 30% and gains of respectively 20 and 29 dB.
{"title":"High Efficiency C-band Monolithic Power Amplifiers","authors":"L. Telliez, P. Chaumas, S. Marcillaud, E. Watrin","doi":"10.1109/EUMA.1994.337370","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337370","url":null,"abstract":"This paper describes the design, fabrication and measured performances of C-band monolithic two-stage and three-stage amplifiers. These two on-chip fully matched versions designed for class-AB operation demonstrate 7 Watt output power over the 5 - 6 GHz frequency range with associated power added efficiency higher than 30% and gains of respectively 20 and 29 dB.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129332086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337233
H. Mattes, M. Pilz
The design and performance of cryogenically coolable HEMT amplifiers in the frequency range from 2 GHz to 45 GHz is presented. Noise temperatures of 15 K at 15 GHz, 30 K at 32 GHz and 35 K at 43 GHz have been achieved. A semi-empirical approach based on the work of Pucel [5], Rhode [4] and Pospieszalski [3] is used for the derivation of the cyogenically cooled HEMT's noise parameters. An empirially developed formula for the equivalent temperature Td at 20 K is given. Good agreement is obtained between measurements and the model.
{"title":"Cryogenically Coolable HEMT Amplifiers in the Frequency Range 2-45 GHz","authors":"H. Mattes, M. Pilz","doi":"10.1109/EUMA.1994.337233","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337233","url":null,"abstract":"The design and performance of cryogenically coolable HEMT amplifiers in the frequency range from 2 GHz to 45 GHz is presented. Noise temperatures of 15 K at 15 GHz, 30 K at 32 GHz and 35 K at 43 GHz have been achieved. A semi-empirical approach based on the work of Pucel [5], Rhode [4] and Pospieszalski [3] is used for the derivation of the cyogenically cooled HEMT's noise parameters. An empirially developed formula for the equivalent temperature Td at 20 K is given. Good agreement is obtained between measurements and the model.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128022290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337195
H. Chaloupka
Microwave applications of HTS can in principle take advantage of the extremely low conductor losses, the nonlinear response of the conductivity in high fields and of the Josephson effects. The low conductor losses allow the realization of extremely miniaturized passive low-power components with high performance. Therefore, microwave circuits for adaptive and frequency selective analog signal processing in antenna arrays which require a large number of couplers, switchable delay-elements and high-Q filters can be realized as very compact planar circuits which share a common cooling system. The utilization of HTS in the antenna elements is justified in case of special performance antennas.
{"title":"Application of High-Temperature Superconductivity to Antenna Arrays with Analog Signal Processing Capability","authors":"H. Chaloupka","doi":"10.1109/EUMA.1994.337195","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337195","url":null,"abstract":"Microwave applications of HTS can in principle take advantage of the extremely low conductor losses, the nonlinear response of the conductivity in high fields and of the Josephson effects. The low conductor losses allow the realization of extremely miniaturized passive low-power components with high performance. Therefore, microwave circuits for adaptive and frequency selective analog signal processing in antenna arrays which require a large number of couplers, switchable delay-elements and high-Q filters can be realized as very compact planar circuits which share a common cooling system. The utilization of HTS in the antenna elements is justified in case of special performance antennas.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126920332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337399
P. Rolland, H. Blanck, A. Tachafine, J. Belquin, S. Delage, E. Chartier
2D and 1 D hydrodynamic non stationary models of HBT's have been developed and used for the optimisation of GaInP/GaAs HBT structures for high power amplification at X band. These physical models can be coupled to the circuit either in the time domain or using an harmonic balance procedure. Linear and non linear electrical circuits of these devices were also extracted from the physical simulation results. This approach allows a good understanding of the main physical phenomena and an accurate description of the electrical parameters as a function of the various bias conditions and operating temperature.
{"title":"Optimisation of GaInP/GaAs HBT structures for high power operation at X-band and extraction of non linear electrical circuits for CAD","authors":"P. Rolland, H. Blanck, A. Tachafine, J. Belquin, S. Delage, E. Chartier","doi":"10.1109/EUMA.1994.337399","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337399","url":null,"abstract":"2D and 1 D hydrodynamic non stationary models of HBT's have been developed and used for the optimisation of GaInP/GaAs HBT structures for high power amplification at X band. These physical models can be coupled to the circuit either in the time domain or using an harmonic balance procedure. Linear and non linear electrical circuits of these devices were also extracted from the physical simulation results. This approach allows a good understanding of the main physical phenomena and an accurate description of the electrical parameters as a function of the various bias conditions and operating temperature.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125479818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-01DOI: 10.1109/EUMA.1994.337451
G. Leuzzi, A. Serino, F. Gianini
Linear and non-linear microwave active devices are usually modelled with an equivalent circuit for CAD applications. The circuit is composed of parasitic (bias-independent) and intrinsic (bias-dependent) elements; the correct evaluation of both types of elements is required not only for the extraction of a non-linear model, but also for the extraction of a linear bias-dependent one, as necessary for foundry use. The evaluation of parasitics is usually performed prior to the standard full-bias measurements, for a special condition of the active device (Vds = 0, 'cold FET' measurements) [1]. The standard technique for inductances evaluation however does not take into account a correction term due to parasitic resistances and capacitances, that is equivalent to a negative inductive tern even in the low and medium frequency range, where evaluation is made. This can lead to incorrect gate, source and drain parasitic inductance values, especially for small transistors. In some cases the magnitude of the error can be comparable to the small via-hole inductance, that therefore may appear to be negative if evaluated with the standard technique; it can also represent a substantial fraction of gate and drain inductances. In this paper the underlying theory and experimental data are exposed.
{"title":"RC-Term Correction in the Evaluation of Parasitic Inductances for Microwave Transistor Modelling","authors":"G. Leuzzi, A. Serino, F. Gianini","doi":"10.1109/EUMA.1994.337451","DOIUrl":"https://doi.org/10.1109/EUMA.1994.337451","url":null,"abstract":"Linear and non-linear microwave active devices are usually modelled with an equivalent circuit for CAD applications. The circuit is composed of parasitic (bias-independent) and intrinsic (bias-dependent) elements; the correct evaluation of both types of elements is required not only for the extraction of a non-linear model, but also for the extraction of a linear bias-dependent one, as necessary for foundry use. The evaluation of parasitics is usually performed prior to the standard full-bias measurements, for a special condition of the active device (Vds = 0, 'cold FET' measurements) [1]. The standard technique for inductances evaluation however does not take into account a correction term due to parasitic resistances and capacitances, that is equivalent to a negative inductive tern even in the low and medium frequency range, where evaluation is made. This can lead to incorrect gate, source and drain parasitic inductance values, especially for small transistors. In some cases the magnitude of the error can be comparable to the small via-hole inductance, that therefore may appear to be negative if evaluated with the standard technique; it can also represent a substantial fraction of gate and drain inductances. In this paper the underlying theory and experimental data are exposed.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126362585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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