Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387843
K. Lam, X.X. Wang, H. Chan
Bismuth sodium barium titanate [(Bi0.5Na0.5)0.94Ba0.06TiO3 or BNBT6] ceramic powder have been incorporated into a polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE) 70/30 mol%] copolymer matrix to form 0-3 composites. With the composition near the morphtrophic phase boundary (MPB) region, BNBT6 has relatively high piezoelectric properties. Polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] is a ferroelectric copolymer that has high piezoelectric and pyroelectric performance. BNBT6/P(VDF-TrFE) 0-3 composites with BNBT6 volume fraction Phi ranging from 0.05 to 0.3 were prepared using solvent casting to disperse the ceramic powder in the copolymer matrix followed by hot-pressing. The pyroelectric coefficient of the composites was measured as a function of Phi under different A.C. poling conditions. As both the BNBT6 inclusion and P(VDF-TrFE) matrix can be poled under similar conditions, the composites can be poled effectively after subjected to several cycles of sinusoidal electric field. The BNBT6 0-3 composites (poled with a.c. source) were found to have better pyroelectric properties than that of lead zirconate titante PZT / P(VDF-TrFE) 0-3 composites (poled with d.c. source).
{"title":"(Bi0.5Na0.5)0.94Ba0.06TiO3 / P(VDF-TrFE) 0-3 Composites Poled with a Sinusoidal Electric Field","authors":"K. Lam, X.X. Wang, H. Chan","doi":"10.1109/ISAF.2006.4387843","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387843","url":null,"abstract":"Bismuth sodium barium titanate [(Bi0.5Na0.5)0.94Ba0.06TiO3 or BNBT6] ceramic powder have been incorporated into a polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE) 70/30 mol%] copolymer matrix to form 0-3 composites. With the composition near the morphtrophic phase boundary (MPB) region, BNBT6 has relatively high piezoelectric properties. Polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] is a ferroelectric copolymer that has high piezoelectric and pyroelectric performance. BNBT6/P(VDF-TrFE) 0-3 composites with BNBT6 volume fraction Phi ranging from 0.05 to 0.3 were prepared using solvent casting to disperse the ceramic powder in the copolymer matrix followed by hot-pressing. The pyroelectric coefficient of the composites was measured as a function of Phi under different A.C. poling conditions. As both the BNBT6 inclusion and P(VDF-TrFE) matrix can be poled under similar conditions, the composites can be poled effectively after subjected to several cycles of sinusoidal electric field. The BNBT6 0-3 composites (poled with a.c. source) were found to have better pyroelectric properties than that of lead zirconate titante PZT / P(VDF-TrFE) 0-3 composites (poled with d.c. source).","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122947697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387819
W. Borland
The integration of embedded DuPont ceramic capacitors and HiK polyimide based planar capacitor materials in IC packages has been investigated by a joint program between DuPont and Georgia Institute of Technology packaging research center (PRC). Test vehicles with different types of structures were designed, fabricated and tested for individual device characterization. The test vehicles included embedded ceramic-fired-on-foil capacitors with microvia interconnects and two sequential industry standard build-up layers on each side of a BT core. Feature sizes were 12 micron lines and spaces and 50 micron diameter microvias. Other test vehicles used a core layer without build-up layers, planar capacitor layers and arrays of discrete capacitors with different size, capacitance, and interconnection designs. Each capacitor variation was electrically characterized. The electrical performance data from the test vehicles was used to perform simulations to determine the designs offering the most effective power delivery and noise decoupling for a package having 2007 ITRS die and substrate features. The embedded ceramic capacitors show a significant improvement in power system noise decoupling and charge supply to the IC in the mid-frequency range due to the low inductance design.
{"title":"Decoupling of High Performance Semiconductors Using Embedded Capacitor Technology","authors":"W. Borland","doi":"10.1109/ISAF.2006.4387819","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387819","url":null,"abstract":"The integration of embedded DuPont ceramic capacitors and HiK polyimide based planar capacitor materials in IC packages has been investigated by a joint program between DuPont and Georgia Institute of Technology packaging research center (PRC). Test vehicles with different types of structures were designed, fabricated and tested for individual device characterization. The test vehicles included embedded ceramic-fired-on-foil capacitors with microvia interconnects and two sequential industry standard build-up layers on each side of a BT core. Feature sizes were 12 micron lines and spaces and 50 micron diameter microvias. Other test vehicles used a core layer without build-up layers, planar capacitor layers and arrays of discrete capacitors with different size, capacitance, and interconnection designs. Each capacitor variation was electrically characterized. The electrical performance data from the test vehicles was used to perform simulations to determine the designs offering the most effective power delivery and noise decoupling for a package having 2007 ITRS die and substrate features. The embedded ceramic capacitors show a significant improvement in power system noise decoupling and charge supply to the IC in the mid-frequency range due to the low inductance design.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128074623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387837
B. Trinh, S. Horita
We fabricated a new ferroelectric gate field-effect transistor memory (F-FET) with an intermediate electrode inserted between the ferroelectric capacitor (Cf) and the metal-oxide-semiconductor field-effect transistor (MOSFET) for writing data. The structure was a RuO2 top electrode/polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT)/(Pt/RuO2) intermediate electrode/SiO2/Si substrate. The basic operation of the new memory was confirmed by a discrete circuit that the Cf was connected serially with the MOSFET. For data writing, two positive or negative square pulses applied between the top electrode and the intermediate electrode induced the positive (Pr+) and the negative (Pr-) remanent polarizations, respectively, for coding memory states. For data reading, an unipolar square pulse train was applied between the top electrode and the source of the MOSFET, and the drain of the MOSFET was biased by a DC voltage. When the memory state corresponded to the Pr+ or the P-, the drain current (ID) was small or large, respectively. In this study, we used a polycrystalline PZT film to deal with the difficult problems of an epitaxial PZT film such as complicated techniques and high cost of products for commercialization goal.
{"title":"Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode","authors":"B. Trinh, S. Horita","doi":"10.1109/ISAF.2006.4387837","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387837","url":null,"abstract":"We fabricated a new ferroelectric gate field-effect transistor memory (F-FET) with an intermediate electrode inserted between the ferroelectric capacitor (Cf) and the metal-oxide-semiconductor field-effect transistor (MOSFET) for writing data. The structure was a RuO2 top electrode/polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT)/(Pt/RuO2) intermediate electrode/SiO2/Si substrate. The basic operation of the new memory was confirmed by a discrete circuit that the Cf was connected serially with the MOSFET. For data writing, two positive or negative square pulses applied between the top electrode and the intermediate electrode induced the positive (Pr+) and the negative (Pr-) remanent polarizations, respectively, for coding memory states. For data reading, an unipolar square pulse train was applied between the top electrode and the source of the MOSFET, and the drain of the MOSFET was biased by a DC voltage. When the memory state corresponded to the Pr+ or the P-, the drain current (ID) was small or large, respectively. In this study, we used a polycrystalline PZT film to deal with the difficult problems of an epitaxial PZT film such as complicated techniques and high cost of products for commercialization goal.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133181965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387906
Jang-Yong Kim, A. Grishin
AgTa0.5Nb0.5O3 (ATN) 400 nm thick films have been sintered by pulsed laser deposition technique on LaAIO3 (001), sapphire (Al2O3-011_2, r-cut) single crystal substrates and Corning 7059 glass. Photolithography and metal lift-off technique were used to fabricate tunable coplanar waveguide interdigital capacitors (CPWIDCs). On-wafer test of varactors was performed with microwave network analyzer and G-S-G microwave probe. ATN/LaAIO3 capacitors demonstrated the highest tunability (~5.8%@20GHz), ATN/Glass showed the best flat dispersion (-3.9%) and ATN/ AI2O3 showed the lowest loss tangent (~0.06@20GHz) in the microwave range from 1 to 40 GHz.
{"title":"Microwave Properties of AgTa0.5Nb0.5O3 Thin Film Varactors on Various Substrates","authors":"Jang-Yong Kim, A. Grishin","doi":"10.1109/ISAF.2006.4387906","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387906","url":null,"abstract":"AgTa<sub>0.5</sub>Nb<sub>0.5</sub>O<sub>3</sub> (ATN) 400 nm thick films have been sintered by pulsed laser deposition technique on LaAIO<sub>3</sub> (001), sapphire (Al<sub>2</sub>O<sub>3</sub>-011_2, r-cut) single crystal substrates and Corning 7059 glass. Photolithography and metal lift-off technique were used to fabricate tunable coplanar waveguide interdigital capacitors (CPWIDCs). On-wafer test of varactors was performed with microwave network analyzer and G-S-G microwave probe. ATN/LaAIO<sub>3</sub> capacitors demonstrated the highest tunability (~5.8%@20GHz), ATN/Glass showed the best flat dispersion (-3.9%) and ATN/ AI<sub>2</sub>O<sub>3</sub> showed the lowest loss tangent (~0.06@20GHz) in the microwave range from 1 to 40 GHz.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133895294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387887
M. Davis, M. Budimir, D. Damjanovic, N. Setter
The importance of a high shear coefficient d15 to the piezoelectric properties of domain-engineered perovskite crystals is discussed. The terms "rotator" and "extender" are introduced to differentiate the contrasting behaviors of 4mm BaTiO3 and PbTiO3. In "rotator" ferroelectrics, where d15 is high, polarization rotation is the dominant mechanism of piezoelectric response; in "extender" ferroelectrics d15 is low and the collinear effect dominates. Large shear coefficients can be expected close to ferroelectric-ferroelectric phase transitions; this includes morphotropic phase boundaries. The differing piezoelectric properties of rotator and extender domain-engineered single crystals are discussed.
{"title":"Importance of a High Shear Coefficient to the Piezoelectric Properties of Domain-Engineered Crystals and Ceramics","authors":"M. Davis, M. Budimir, D. Damjanovic, N. Setter","doi":"10.1109/ISAF.2006.4387887","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387887","url":null,"abstract":"The importance of a high shear coefficient d15 to the piezoelectric properties of domain-engineered perovskite crystals is discussed. The terms \"rotator\" and \"extender\" are introduced to differentiate the contrasting behaviors of 4mm BaTiO3 and PbTiO3. In \"rotator\" ferroelectrics, where d15 is high, polarization rotation is the dominant mechanism of piezoelectric response; in \"extender\" ferroelectrics d15 is low and the collinear effect dominates. Large shear coefficients can be expected close to ferroelectric-ferroelectric phase transitions; this includes morphotropic phase boundaries. The differing piezoelectric properties of rotator and extender domain-engineered single crystals are discussed.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133883858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387835
S. Wongsaenmai, X. Tan, S. Ananta, R. Yimnirun
Ferroelectric ceramics with formula Pb0.8Ba0.2[(In1/2Nb1/2)1-xTix]O3 (PBINT) (x=0.0, 0.05, 0.1, 0.2, 0.3, 0.4 and 0.5) were prepared via the wolframite method. The perovskite phase formation and grain morphology microstructure were examined by X-ray diffraction and scanning electron microscopy. It was found that ceramics with compositions in the range of x=0.0~0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. Significant frequency dispersion in the dielectric properties was observed in all compositions. However, distinct polarization vs. field hysteresis loops were found in the composition series. With increasing Ti content, remanent polarization Pr as well as coercive field Ec increase considerably. The structure analysis and properties measurement indicate that x=0.4 is the morphotropic phase boundary (MPB) composition in this system.
采用黑钨矿法制备了配方为Pb0.8Ba0.2[(In1/2Nb1/2)1- x Ti x]O3 (PBINT) (x=0.0, 0.05, 0.1, 0.2, 0.3, 0.4和0.5)的铁电陶瓷。采用x射线衍射和扫描电镜对钙钛矿相形成和晶粒形貌进行了观察。结果表明，x=0.0~0.3范围内的陶瓷呈拟立方结构，而x=0.5范围内的陶瓷呈四边形结构。在所有成分中均观察到介电性能的显著频率色散。然而，在组成序列中发现了明显的极化-场磁滞回线。随着Ti含量的增加，残余极化Pr和矫顽力场Ec显著增大。结构分析和性能测试表明，x=0.4是该体系的致形相界(MPB)成分。
{"title":"Dielectric and Ferroelectric Properties of Pb0.8Ba0.2[(In1/2Nb1/2)1-xTix]O3 Ceramics","authors":"S. Wongsaenmai, X. Tan, S. Ananta, R. Yimnirun","doi":"10.1109/ISAF.2006.4387835","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387835","url":null,"abstract":"Ferroelectric ceramics with formula Pb<sub>0.8</sub>Ba<sub>0.2</sub>[(In<sub>1/2</sub>Nb<sub>1/2</sub>)<sub>1-</sub> <i> <sub>x</sub> </i>Ti<i> <sub>x</sub> </i>]O<sub>3</sub> (PBINT) (<i>x</i>=0.0, 0.05, 0.1, 0.2, 0.3, 0.4 and 0.5) were prepared via the wolframite method. The perovskite phase formation and grain morphology microstructure were examined by X-ray diffraction and scanning electron microscopy. It was found that ceramics with compositions in the range of <i>x</i>=0.0~0.3 showed a pseudo-cubic structure, whereas the ceramic with <i>x</i>=0.5 displayed a tetragonal structure. Significant frequency dispersion in the dielectric properties was observed in all compositions. However, distinct polarization vs. field hysteresis loops were found in the composition series. With increasing Ti content, remanent polarization P<sub>r</sub> as well as coercive field E<sub>c</sub> increase considerably. The structure analysis and properties measurement indicate that <i>x</i>=0.4 is the morphotropic phase boundary (MPB) composition in this system.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132703447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387907
T. Kalkur, A. Jamil, N. Cramer
Ferroelectric capacitors made from Ba0.5Sr0.5TiO3 (BST) are applied as varactors in tunable, high frequency circuit applications. In this context, a voltage-controlled oscillator (VCO) based on Colpitts architecture has been designed and implemented using discrete RF BJTs and tunable ferroelectric capacitor. The tunable ferroelectric capacitor has been fabricated on quartz substrate with BST deposited by RF magnetron sputtering and platinum electrodes. At 1 MHz, the ferroelectric capacitor shows a tunability of about 30% for applied DC bias voltage of plusmn5 V and quality factor 'Q' of 160. The fabricated VCO on RF prototype board can be tuned from frequency 577 MHz to 602 MHz with a control voltage of plusmn3 V and a gain of 8.3 MHz/V and a tunability of 4%.
{"title":"Characteristics of Voltage Controlled Oscillators Implemented With Tunable Ferroelectric High-k Capacitors","authors":"T. Kalkur, A. Jamil, N. Cramer","doi":"10.1109/ISAF.2006.4387907","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387907","url":null,"abstract":"Ferroelectric capacitors made from Ba0.5Sr0.5TiO3 (BST) are applied as varactors in tunable, high frequency circuit applications. In this context, a voltage-controlled oscillator (VCO) based on Colpitts architecture has been designed and implemented using discrete RF BJTs and tunable ferroelectric capacitor. The tunable ferroelectric capacitor has been fabricated on quartz substrate with BST deposited by RF magnetron sputtering and platinum electrodes. At 1 MHz, the ferroelectric capacitor shows a tunability of about 30% for applied DC bias voltage of plusmn5 V and quality factor 'Q' of 160. The fabricated VCO on RF prototype board can be tuned from frequency 577 MHz to 602 MHz with a control voltage of plusmn3 V and a gain of 8.3 MHz/V and a tunability of 4%.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116091034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387848
C. Chao, T. Lam, K. Kwok, H. Chan
Representing a new approach to ultrasound generation and detection, study on piezoelectric micromachined ultrasonic transducers (pMUTs) has been a growing research area in recent years. Intensive research work has been directed on the deposition of lead zirconate titanate (PZT) films on silicon substrates for their excellent piezoelectric coefficients and electromechanical coupling coefficients. However, the high processing temperature required for PZT crystallization results in a low device yield and also makes it difficult to integrate with control circuits. In this paper, a fabrication technology of pMUTs based on piezoelectric P(VDF-TrFE) 70/30 copolymer films has been adopted, with the maximum processing temperature not exceeding 140degC allowing for post-IC compatibility. The entire processing procedures are simple and low cost, as compared with those of capacitive micromachined ultrasonic transducers (cMUTs) and ceramic-based pMUTs. The applications of the fabricated pMUTs as airborne ultrasonic transducers and transducer arrays have been demonstrated. Reasonably good device performances and high device yield have been achieved.
{"title":"Piezoelectric Micromachined Ultrasonic Transducers Based on P(VDF-TrFE) Copolymer Thin Films","authors":"C. Chao, T. Lam, K. Kwok, H. Chan","doi":"10.1109/ISAF.2006.4387848","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387848","url":null,"abstract":"Representing a new approach to ultrasound generation and detection, study on piezoelectric micromachined ultrasonic transducers (pMUTs) has been a growing research area in recent years. Intensive research work has been directed on the deposition of lead zirconate titanate (PZT) films on silicon substrates for their excellent piezoelectric coefficients and electromechanical coupling coefficients. However, the high processing temperature required for PZT crystallization results in a low device yield and also makes it difficult to integrate with control circuits. In this paper, a fabrication technology of pMUTs based on piezoelectric P(VDF-TrFE) 70/30 copolymer films has been adopted, with the maximum processing temperature not exceeding 140degC allowing for post-IC compatibility. The entire processing procedures are simple and low cost, as compared with those of capacitive micromachined ultrasonic transducers (cMUTs) and ceramic-based pMUTs. The applications of the fabricated pMUTs as airborne ultrasonic transducers and transducer arrays have been demonstrated. Reasonably good device performances and high device yield have been achieved.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115528960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387883
P. Kirsch, M. B. Assouar, O. Elmazria, C. Tiușan, P. Alnot
We report in this paper, the fabrication process of surface acoustic wave (SAW) devices by direct writing using electron beam lithography on very high resistivity materials, and the frequency characterization of the high frequency devices realized using this technologic process. Various experimental parameters relative to lithography system, resist deposition and lift-off process were studied and optimized. We have realized SAW devices on 36degYX LiTa03 substrates by structuring the interdigital transducers (IDTs), using a MMA/PMMA bilayer resist combined with lift-off process. The problem consisting in proximity effects was resolved by electron dose adjusting and non-uniformity exposure of the structure. The IDTs made in aluminum with resolutions down to 400 nm were successfully patterned on LiTaO3 with an adapted technological process. The analysis of the IDTs' periodicity and of the homogeneity of their thickness was carried out using atomic force microscopy and field emission scanning electron microscopy. A very regular thickness and regular lateral resolution was obtained. The frequency characterization performed by network analyzer shows that the realized SAW device operates at 5.1 GHz when the 3rd harmonic of the filter is considered. The different propagation modes, GSAW, PSAW and HVPSAW, relative to the 36degYX LiTaO3, were identified.
{"title":"High frequency SAW Devices on 36°YX LiTaO3 substrates realized using electron beam lithography","authors":"P. Kirsch, M. B. Assouar, O. Elmazria, C. Tiușan, P. Alnot","doi":"10.1109/ISAF.2006.4387883","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387883","url":null,"abstract":"We report in this paper, the fabrication process of surface acoustic wave (SAW) devices by direct writing using electron beam lithography on very high resistivity materials, and the frequency characterization of the high frequency devices realized using this technologic process. Various experimental parameters relative to lithography system, resist deposition and lift-off process were studied and optimized. We have realized SAW devices on 36degYX LiTa03 substrates by structuring the interdigital transducers (IDTs), using a MMA/PMMA bilayer resist combined with lift-off process. The problem consisting in proximity effects was resolved by electron dose adjusting and non-uniformity exposure of the structure. The IDTs made in aluminum with resolutions down to 400 nm were successfully patterned on LiTaO3 with an adapted technological process. The analysis of the IDTs' periodicity and of the homogeneity of their thickness was carried out using atomic force microscopy and field emission scanning electron microscopy. A very regular thickness and regular lateral resolution was obtained. The frequency characterization performed by network analyzer shows that the realized SAW device operates at 5.1 GHz when the 3rd harmonic of the filter is considered. The different propagation modes, GSAW, PSAW and HVPSAW, relative to the 36degYX LiTaO3, were identified.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116860577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387830
Jingyan He, T. Comyn, T. Skidmore, S. J. Milne, A. Bell
Grain-oriented ceramics, in which the grains are aligned around a preferred crystallographic axis, are of interest for increasing the figure of merit of piezoelectric ceramics. Templated grain growth (TGG), in which a fine matrix is recrystallised upon oriented seed crystals, is one of the more successful techniques for preparing ceramics with such crystallographic texture. Seeds are usually required to exhibit shape anisotropy in a defined orientation with an appropriate crystallographic template plane. In this study, Bi4Ti3O12 (BiT) seeds were produced via molten-salt synthesis. The effect of temperature and dwelling time on the morphology and structure of Bi4Ti3O12 powders was studied, in order to identify the optimum conditions for seed preparation. The chosen Bi4Ti3O12 seeds were then added to PbTiO3-based matrices (Bi0.5Fe0.5Pb0.47La0.03Ti0.5O3+x) to produce Bi4Ti3O12 oriented BFPT ceramics by tape casting. The microstructure and the calculated orientation factors of the textured ceramics are reported.
{"title":"Molten-Salt Synthesis of Bismuth Titanate and Fabrication of PbTiO3-based Textured Ceramics","authors":"Jingyan He, T. Comyn, T. Skidmore, S. J. Milne, A. Bell","doi":"10.1109/ISAF.2006.4387830","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387830","url":null,"abstract":"Grain-oriented ceramics, in which the grains are aligned around a preferred crystallographic axis, are of interest for increasing the figure of merit of piezoelectric ceramics. Templated grain growth (TGG), in which a fine matrix is recrystallised upon oriented seed crystals, is one of the more successful techniques for preparing ceramics with such crystallographic texture. Seeds are usually required to exhibit shape anisotropy in a defined orientation with an appropriate crystallographic template plane. In this study, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BiT) seeds were produced via molten-salt synthesis. The effect of temperature and dwelling time on the morphology and structure of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> powders was studied, in order to identify the optimum conditions for seed preparation. The chosen Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> seeds were then added to PbTiO<sub>3</sub>-based matrices (Bi<sub>0.5</sub>Fe<sub>0.5</sub>Pb<sub>0.47</sub>La<sub>0.03</sub>Ti<sub>0.5</sub>O<sub>3+x</sub>) to produce Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> oriented BFPT ceramics by tape casting. The microstructure and the calculated orientation factors of the textured ceramics are reported.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129781561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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